DE60144382D1 - Verfahren zur reinigung der oberfläche eines substrates - Google Patents

Verfahren zur reinigung der oberfläche eines substrates

Info

Publication number
DE60144382D1
DE60144382D1 DE60144382T DE60144382T DE60144382D1 DE 60144382 D1 DE60144382 D1 DE 60144382D1 DE 60144382 T DE60144382 T DE 60144382T DE 60144382 T DE60144382 T DE 60144382T DE 60144382 D1 DE60144382 D1 DE 60144382D1
Authority
DE
Germany
Prior art keywords
cleaning
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144382T
Other languages
English (en)
Inventor
Yehiel Gotkis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60144382D1 publication Critical patent/DE60144382D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60144382T 2000-10-05 2001-10-04 Verfahren zur reinigung der oberfläche eines substrates Expired - Lifetime DE60144382D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/684,473 US6328042B1 (en) 2000-10-05 2000-10-05 Wafer cleaning module and method for cleaning the surface of a substrate
PCT/US2001/031312 WO2002029860A2 (en) 2000-10-05 2001-10-04 Wafer cleaning module and method for cleaning the surface of a substrate

Publications (1)

Publication Number Publication Date
DE60144382D1 true DE60144382D1 (de) 2011-05-19

Family

ID=24748176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144382T Expired - Lifetime DE60144382D1 (de) 2000-10-05 2001-10-04 Verfahren zur reinigung der oberfläche eines substrates

Country Status (9)

Country Link
US (2) US6328042B1 (de)
EP (1) EP1323187B1 (de)
JP (1) JP4012820B2 (de)
KR (1) KR100844294B1 (de)
CN (1) CN1263100C (de)
AU (1) AU2002211485A1 (de)
DE (1) DE60144382D1 (de)
TW (1) TWI240296B (de)
WO (1) WO2002029860A2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100338777B1 (ko) * 2000-07-22 2002-05-31 윤종용 화학 기계적 연마 이후의 구리층 부식을 방지하는 반도체장치 제조방법 및 이에 이용되는 화학 기계적 연마장치
US6773337B1 (en) * 2000-11-07 2004-08-10 Planar Labs Corporation Method and apparatus to recondition an ion exchange polish pad
TW536752B (en) * 2001-11-26 2003-06-11 Chung Shan Inst Of Science Compensation type CMP method and apparatus
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US6767274B2 (en) 2002-11-07 2004-07-27 Taiwan Semiconductor Manufacturing Company Method to reduce defect/slurry residue for copper CMP
US7256435B1 (en) * 2003-06-02 2007-08-14 Hewlett-Packard Development Company, L.P. Multilevel imprint lithography
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US6936540B2 (en) * 2003-09-18 2005-08-30 Micron Technology, Inc. Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US20060112971A1 (en) * 2004-11-30 2006-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of eliminating galvanic corrosion in copper CMP
FR2880471B1 (fr) * 2004-12-31 2007-03-09 Altis Semiconductor Snc Procede de nettoyage d'un semiconducteur
EP2428557A1 (de) * 2005-12-30 2012-03-14 LAM Research Corporation Reinigungslösung
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8084406B2 (en) 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
US8845812B2 (en) * 2009-06-12 2014-09-30 Micron Technology, Inc. Method for contamination removal using magnetic particles
US9190881B1 (en) 2011-08-02 2015-11-17 Tooltek Engineering Corporation Rotary-powered mechanical oscillator
CN112992657A (zh) * 2021-03-01 2021-06-18 昆山基侑电子科技有限公司 一种晶圆清洗方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777804A (en) * 1987-08-26 1988-10-18 Texas Instruments Incorporated Method and apparatus for easing surface particle removal by size increase
US5160547A (en) * 1989-03-14 1992-11-03 Church & Dwight Co., Inc. Process for removing coatings from sensitive substrates, and blasting media useful therein
JP2823077B2 (ja) * 1989-05-20 1998-11-11 株式会社フレンドテック研究所 洗浄方法
US5035826A (en) * 1989-09-22 1991-07-30 Colgate-Palmolive Company Liquid crystal detergent composition
JPH03145130A (ja) * 1989-10-17 1991-06-20 Applied Materials Inc 物体表面から汚染粒子を除去する装置及び方法
JPH04134822A (ja) * 1990-09-27 1992-05-08 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH05115853A (ja) * 1991-04-19 1993-05-14 Eva Abony Szucs 鋭敏な表面を洗浄する方法および装置
CA2093750C (en) * 1992-04-15 1999-03-09 Wayne Thomas Mcdermott Apparatus to clean solid surfaces using a cryogenic aerosol
US5645675A (en) * 1993-09-10 1997-07-08 Advanced Micro Devices, Inc. Selective planarization apparatus
US5778481A (en) * 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
JP3350627B2 (ja) 1996-07-03 2002-11-25 宮崎沖電気株式会社 半導体素子の異物除去方法及びその装置
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US6217430B1 (en) * 1998-11-02 2001-04-17 Applied Materials, Inc. Pad conditioner cleaning apparatus
US6261158B1 (en) * 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
JP2000254857A (ja) * 1999-01-06 2000-09-19 Tokyo Seimitsu Co Ltd 平面加工装置及び平面加工方法
US6676766B2 (en) * 2000-05-02 2004-01-13 Sprout Co., Ltd. Method for cleaning a substrate using a sherbet-like composition

Also Published As

Publication number Publication date
TWI240296B (en) 2005-09-21
CN1528011A (zh) 2004-09-08
WO2002029860A3 (en) 2003-03-13
US6328042B1 (en) 2001-12-11
CN1263100C (zh) 2006-07-05
US20020040724A1 (en) 2002-04-11
EP1323187B1 (de) 2011-04-06
JP4012820B2 (ja) 2007-11-21
KR20030059170A (ko) 2003-07-07
KR100844294B1 (ko) 2008-07-07
AU2002211485A1 (en) 2002-04-15
JP2004511099A (ja) 2004-04-08
WO2002029860A2 (en) 2002-04-11
EP1323187A2 (de) 2003-07-02
US6527870B2 (en) 2003-03-04

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