DE69916728D1 - Verfahren zur Reinigung eines Halbleitersubstrats - Google Patents

Verfahren zur Reinigung eines Halbleitersubstrats

Info

Publication number
DE69916728D1
DE69916728D1 DE69916728T DE69916728T DE69916728D1 DE 69916728 D1 DE69916728 D1 DE 69916728D1 DE 69916728 T DE69916728 T DE 69916728T DE 69916728 T DE69916728 T DE 69916728T DE 69916728 D1 DE69916728 D1 DE 69916728D1
Authority
DE
Germany
Prior art keywords
cleaning
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69916728T
Other languages
English (en)
Other versions
DE69916728T2 (de
Inventor
Kazushige Takaish
Ryoko Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Silicon Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Corp
Application granted granted Critical
Publication of DE69916728D1 publication Critical patent/DE69916728D1/de
Publication of DE69916728T2 publication Critical patent/DE69916728T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69916728T 1998-08-28 1999-08-23 Verfahren zur Reinigung eines Halbleitersubstrats Expired - Lifetime DE69916728T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24300898 1998-08-28
JP24300898 1998-08-28

Publications (2)

Publication Number Publication Date
DE69916728D1 true DE69916728D1 (de) 2004-06-03
DE69916728T2 DE69916728T2 (de) 2005-04-28

Family

ID=17097527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916728T Expired - Lifetime DE69916728T2 (de) 1998-08-28 1999-08-23 Verfahren zur Reinigung eines Halbleitersubstrats

Country Status (6)

Country Link
US (1) US6146467A (de)
EP (1) EP0982765B1 (de)
KR (1) KR100340274B1 (de)
CN (1) CN1119831C (de)
DE (1) DE69916728T2 (de)
TW (1) TW424274B (de)

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DE19741465A1 (de) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
EP0982765B1 (de) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Verfahren zur Reinigung eines Halbleitersubstrats
US6162565A (en) 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
US6230720B1 (en) * 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
JP2001176833A (ja) 1999-12-14 2001-06-29 Tokyo Electron Ltd 基板処理装置
JP3488158B2 (ja) * 1999-12-28 2004-01-19 Ｎｅｃエレクトロニクス株式会社 ウエハの洗浄方法
US6503333B2 (en) * 2000-11-30 2003-01-07 Taiwan Semiconductor Manufacturing Company, Ltd Method for cleaning semiconductor wafers with ozone-containing solvent
KR100564427B1 (ko) * 2000-12-20 2006-03-28 주식회사 하이닉스반도체 반도체 소자의 비트라인 세정방법
US6867148B2 (en) * 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
WO2002094462A1 (fr) * 2001-05-22 2002-11-28 Mitsubishi Chemical Corporation Procede de nettoyage de la surface d'un substrat
CN1314084C (zh) * 2003-02-20 2007-05-02 松下电器产业株式会社 蚀刻方法、蚀刻装置以及半导体器件的制造方法
JP2006016249A (ja) * 2004-07-01 2006-01-19 Sumitomo Electric Ind Ltd ＡｌｘＧａｙＩｎ１−ｘ−ｙＮ基板とＡｌｘＧａｙＩｎ１−ｘ−ｙＮ基板の洗浄方法
CN100349266C (zh) * 2004-07-23 2007-11-14 王文 高效能臭氧水清洗半导体晶圆的系统及其方法
US20110018105A1 (en) * 2005-05-17 2011-01-27 Sumitomo Electric Industries, Ltd. Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices
JP2006352075A (ja) 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
US8211844B2 (en) * 2005-10-21 2012-07-03 Freescale Semiconductor, Inc. Method for cleaning a semiconductor structure and chemistry thereof
CN100401470C (zh) * 2006-06-02 2008-07-09 河北工业大学 控制和消除硅气相外延层雾状微缺陷的方法
US20080057678A1 (en) * 2006-08-31 2008-03-06 Kishor Purushottam Gadkaree Semiconductor on glass insulator made using improved hydrogen reduction process
KR100829597B1 (ko) * 2006-11-10 2008-05-14 삼성전자주식회사 반도체 장치의 세정 방법 및 제조 방법
CN101393843B (zh) * 2007-09-20 2010-06-09 中芯国际集成电路制造(上海)有限公司 离子注入后的清洗方法
US8083673B2 (en) 2008-06-25 2011-12-27 Howard Steven Rosen Examination apparatus
US8940178B2 (en) * 2009-03-18 2015-01-27 E I Du Pont De Nemours And Company Textured silicon substrate and method
CN101799381B (zh) * 2010-03-02 2012-03-14 上海新傲科技股份有限公司 一种在硅片表面形成氧化层的方法
CN102446702B (zh) * 2010-10-15 2014-03-19 中芯国际集成电路制造(北京)有限公司 湿法处理方法及回蚀方法
CN102468125B (zh) * 2010-11-01 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种晶片的清洗方法
CN102107193A (zh) * 2010-12-21 2011-06-29 何勇 五金件离子清洗工艺
CN102251242A (zh) * 2011-07-05 2011-11-23 国电宁夏太阳能有限公司 多晶硅清洗方法
CN102456549B (zh) * 2011-11-08 2014-06-25 北京通美晶体技术有限公司 磷化铟晶片及其表面清洗方法
JP5832468B2 (ja) * 2013-03-26 2015-12-16 ＡｖａｎＳｔｒａｔｅ株式会社 ガラス基板の製造方法、ディスプレイ用ガラス基板の製造方法、及びディスプレイ用ガラス基板の端面の洗浄方法
TWI630034B (zh) * 2014-09-18 2018-07-21 台灣積體電路製造股份有限公司 半導體基板的清潔方法與半導體裝置的製作方法
CN109427543B (zh) * 2017-08-31 2022-09-23 胜高股份有限公司 硅晶片的洗涤方法
CN108766932A (zh) * 2018-04-04 2018-11-06 华越微电子有限公司 一种用半导体集成电路或者分立器件的溅射前处理方法
CN110508552A (zh) * 2019-09-27 2019-11-29 江苏美科硅能源有限公司 一种表面附氧化物的原生硅料的处理方法
CN111681949B (zh) * 2020-06-22 2021-05-18 长江存储科技有限责任公司 晶圆背面的处理方法
CN113658851A (zh) * 2021-07-27 2021-11-16 上海中欣晶圆半导体科技有限公司 一种单片式硅片使用有机酸的清洗方法
CN113736580A (zh) * 2021-09-03 2021-12-03 上海中欣晶圆半导体科技有限公司 一种用于硅片清洗抛光的混酸清洗液及抛光硅片清洗方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
TW263531B (de) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
JP3338134B2 (ja) * 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5637151A (en) * 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置
JPH08195369A (ja) * 1995-01-13 1996-07-30 Daikin Ind Ltd 基板の洗浄方法
JPH08264500A (ja) * 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
US5911836A (en) * 1996-02-05 1999-06-15 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
US6296714B1 (en) * 1997-01-16 2001-10-02 Mitsubishi Materials Silicon Corporation Washing solution of semiconductor substrate and washing method using the same
JP3036478B2 (ja) * 1997-08-08 2000-04-24 日本電気株式会社 ウェハの洗浄及び乾燥方法
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
EP0982765B1 (de) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Verfahren zur Reinigung eines Halbleitersubstrats

Also Published As

Publication number Publication date
EP0982765B1 (de) 2004-04-28
TW424274B (en) 2001-03-01
CN1250224A (zh) 2000-04-12
US6146467A (en) 2000-11-14
DE69916728T2 (de) 2005-04-28
EP0982765A2 (de) 2000-03-01
CN1119831C (zh) 2003-08-27
KR100340274B1 (ko) 2002-06-12
EP0982765A3 (de) 2000-04-19
KR20000017572A (ko) 2000-03-25

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