CN1119831C - 半导体衬底的清洗方法 - Google Patents
半导体衬底的清洗方法 Download PDFInfo
- Publication number
- CN1119831C CN1119831C CN99121769A CN99121769A CN1119831C CN 1119831 C CN1119831 C CN 1119831C CN 99121769 A CN99121769 A CN 99121769A CN 99121769 A CN99121769 A CN 99121769A CN 1119831 C CN1119831 C CN 1119831C
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- acid
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- organic acid
- organic
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000243 solution Substances 0.000 claims abstract description 57
- 150000007524 organic acids Chemical class 0.000 claims abstract description 46
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 31
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000011259 mixed solution Substances 0.000 claims abstract description 17
- 239000007864 aqueous solution Substances 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 48
- -1 organic acid salt Chemical class 0.000 claims description 27
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 8
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 6
- 229960001484 edetic acid Drugs 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 235000005985 organic acids Nutrition 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 229960004889 salicylic acid Drugs 0.000 claims description 4
- 229960005137 succinic acid Drugs 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 229940005605 valeric acid Drugs 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000012535 impurity Substances 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000002245 particle Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 239000002253 acid Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 230000000536 complexating effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
金属杂质浓度(×109原子/cm2) | |||||
Al | Fe | Ni | Cu | Zn | |
实施例1 | 9.4 | <1 | <1 | <1 | <1 |
实施例2 | <1 | <1 | <1 | <1 | <1 |
实施例3 | 5.0 | <1 | <1 | <1 | <1 |
实施例4 | 14.0 | <1 | <1 | <1 | <1 |
实施例5 | <1 | <1 | <1 | <1 | 2.9 |
实施例6 | 9.4 | 11.0 | <1 | <1 | <1 |
实施例7 | 19.0 | <1 | <1 | 6.8 | <1 |
比较例 | 110.0 | 22.0 | <1 | <1 | 5.0 |
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24300898 | 1998-08-28 | ||
JP243008/1998 | 1998-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1250224A CN1250224A (zh) | 2000-04-12 |
CN1119831C true CN1119831C (zh) | 2003-08-27 |
Family
ID=17097527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99121769A Expired - Lifetime CN1119831C (zh) | 1998-08-28 | 1999-08-27 | 半导体衬底的清洗方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6146467A (zh) |
EP (1) | EP0982765B1 (zh) |
KR (1) | KR100340274B1 (zh) |
CN (1) | CN1119831C (zh) |
DE (1) | DE69916728T2 (zh) |
TW (1) | TW424274B (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19741465A1 (de) * | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
EP0982765B1 (en) * | 1998-08-28 | 2004-04-28 | Mitsubishi Materials Silicon Corporation | Cleaning method of semiconductor substrate |
US6162565A (en) * | 1998-10-23 | 2000-12-19 | International Business Machines Corporation | Dilute acid rinse after develop for chrome etch |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
JP3488158B2 (ja) * | 1999-12-28 | 2004-01-19 | Necエレクトロニクス株式会社 | ウエハの洗浄方法 |
US6503333B2 (en) * | 2000-11-30 | 2003-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for cleaning semiconductor wafers with ozone-containing solvent |
KR100564427B1 (ko) * | 2000-12-20 | 2006-03-28 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 세정방법 |
US6867148B2 (en) * | 2001-05-16 | 2005-03-15 | Micron Technology, Inc. | Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions |
WO2002094462A1 (fr) * | 2001-05-22 | 2002-11-28 | Mitsubishi Chemical Corporation | Procede de nettoyage de la surface d'un substrat |
KR100591427B1 (ko) * | 2003-02-20 | 2006-06-21 | 마츠시타 덴끼 산교 가부시키가이샤 | 에칭방법, 에칭장치 및 반도체장치의 제조방법 |
JP2006016249A (ja) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | AlxGayIn1−x−yN基板とAlxGayIn1−x−yN基板の洗浄方法 |
CN100349266C (zh) * | 2004-07-23 | 2007-11-14 | 王文 | 高效能臭氧水清洗半导体晶圆的系统及其方法 |
JP2006352075A (ja) | 2005-05-17 | 2006-12-28 | Sumitomo Electric Ind Ltd | 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板 |
US20110018105A1 (en) * | 2005-05-17 | 2011-01-27 | Sumitomo Electric Industries, Ltd. | Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices |
WO2007045269A1 (en) * | 2005-10-21 | 2007-04-26 | Freescale Semiconductor, Inc. | Method for cleaning a semiconductor structure and chemistry thereof |
CN100401470C (zh) * | 2006-06-02 | 2008-07-09 | 河北工业大学 | 控制和消除硅气相外延层雾状微缺陷的方法 |
US20080057678A1 (en) * | 2006-08-31 | 2008-03-06 | Kishor Purushottam Gadkaree | Semiconductor on glass insulator made using improved hydrogen reduction process |
KR100829597B1 (ko) | 2006-11-10 | 2008-05-14 | 삼성전자주식회사 | 반도체 장치의 세정 방법 및 제조 방법 |
CN101393843B (zh) * | 2007-09-20 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 离子注入后的清洗方法 |
US8083673B2 (en) | 2008-06-25 | 2011-12-27 | Howard Steven Rosen | Examination apparatus |
US8940178B2 (en) * | 2009-03-18 | 2015-01-27 | E I Du Pont De Nemours And Company | Textured silicon substrate and method |
CN101799381B (zh) * | 2010-03-02 | 2012-03-14 | 上海新傲科技股份有限公司 | 一种在硅片表面形成氧化层的方法 |
CN102446702B (zh) * | 2010-10-15 | 2014-03-19 | 中芯国际集成电路制造(北京)有限公司 | 湿法处理方法及回蚀方法 |
CN102468125B (zh) * | 2010-11-01 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 一种晶片的清洗方法 |
CN102107193A (zh) * | 2010-12-21 | 2011-06-29 | 何勇 | 五金件离子清洗工艺 |
CN102251242A (zh) * | 2011-07-05 | 2011-11-23 | 国电宁夏太阳能有限公司 | 多晶硅清洗方法 |
CN102456549B (zh) * | 2011-11-08 | 2014-06-25 | 北京通美晶体技术有限公司 | 磷化铟晶片及其表面清洗方法 |
JP5832468B2 (ja) * | 2013-03-26 | 2015-12-16 | AvanStrate株式会社 | ガラス基板の製造方法、ディスプレイ用ガラス基板の製造方法、及びディスプレイ用ガラス基板の端面の洗浄方法 |
TWI630034B (zh) * | 2014-09-18 | 2018-07-21 | 台灣積體電路製造股份有限公司 | 半導體基板的清潔方法與半導體裝置的製作方法 |
CN109427543B (zh) * | 2017-08-31 | 2022-09-23 | 胜高股份有限公司 | 硅晶片的洗涤方法 |
CN108766932A (zh) * | 2018-04-04 | 2018-11-06 | 华越微电子有限公司 | 一种用半导体集成电路或者分立器件的溅射前处理方法 |
CN110508552A (zh) * | 2019-09-27 | 2019-11-29 | 江苏美科硅能源有限公司 | 一种表面附氧化物的原生硅料的处理方法 |
CN111681949B (zh) * | 2020-06-22 | 2021-05-18 | 长江存储科技有限责任公司 | 晶圆背面的处理方法 |
CN113658851A (zh) * | 2021-07-27 | 2021-11-16 | 上海中欣晶圆半导体科技有限公司 | 一种单片式硅片使用有机酸的清洗方法 |
CN113736580A (zh) * | 2021-09-03 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | 一种用于硅片清洗抛光的混酸清洗液及抛光硅片清洗方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3154814B2 (ja) * | 1991-06-28 | 2001-04-09 | 株式会社東芝 | 半導体ウエハの洗浄方法および洗浄装置 |
TW263531B (zh) * | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
JP3338134B2 (ja) * | 1993-08-02 | 2002-10-28 | 株式会社東芝 | 半導体ウエハ処理方法 |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5637151A (en) * | 1994-06-27 | 1997-06-10 | Siemens Components, Inc. | Method for reducing metal contamination of silicon wafers during semiconductor manufacturing |
JPH08126873A (ja) * | 1994-10-28 | 1996-05-21 | Nec Corp | 電子部品等の洗浄方法及び装置 |
JPH08195369A (ja) * | 1995-01-13 | 1996-07-30 | Daikin Ind Ltd | 基板の洗浄方法 |
JPH08264500A (ja) * | 1995-03-27 | 1996-10-11 | Sony Corp | 基板の洗浄方法 |
US5911836A (en) * | 1996-02-05 | 1999-06-15 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
US6296714B1 (en) * | 1997-01-16 | 2001-10-02 | Mitsubishi Materials Silicon Corporation | Washing solution of semiconductor substrate and washing method using the same |
JP3036478B2 (ja) * | 1997-08-08 | 2000-04-24 | 日本電気株式会社 | ウェハの洗浄及び乾燥方法 |
US5932022A (en) * | 1998-04-21 | 1999-08-03 | Harris Corporation | SC-2 based pre-thermal treatment wafer cleaning process |
EP0982765B1 (en) * | 1998-08-28 | 2004-04-28 | Mitsubishi Materials Silicon Corporation | Cleaning method of semiconductor substrate |
-
1999
- 1999-08-23 EP EP99116176A patent/EP0982765B1/en not_active Expired - Lifetime
- 1999-08-23 DE DE69916728T patent/DE69916728T2/de not_active Expired - Lifetime
- 1999-08-26 TW TW088114582A patent/TW424274B/zh not_active IP Right Cessation
- 1999-08-27 US US09/384,143 patent/US6146467A/en not_active Expired - Lifetime
- 1999-08-27 CN CN99121769A patent/CN1119831C/zh not_active Expired - Lifetime
- 1999-08-27 KR KR1019990035777A patent/KR100340274B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6146467A (en) | 2000-11-14 |
EP0982765B1 (en) | 2004-04-28 |
DE69916728D1 (de) | 2004-06-03 |
KR100340274B1 (ko) | 2002-06-12 |
CN1250224A (zh) | 2000-04-12 |
TW424274B (en) | 2001-03-01 |
DE69916728T2 (de) | 2005-04-28 |
EP0982765A2 (en) | 2000-03-01 |
KR20000017572A (ko) | 2000-03-25 |
EP0982765A3 (en) | 2000-04-19 |
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