KR20000017572A - 반도체 기판의 세정 방법 - Google Patents
반도체 기판의 세정 방법 Download PDFInfo
- Publication number
- KR20000017572A KR20000017572A KR1019990035777A KR19990035777A KR20000017572A KR 20000017572 A KR20000017572 A KR 20000017572A KR 1019990035777 A KR1019990035777 A KR 1019990035777A KR 19990035777 A KR19990035777 A KR 19990035777A KR 20000017572 A KR20000017572 A KR 20000017572A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- semiconductor substrate
- organic
- organic acid
- solution
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004140 cleaning Methods 0.000 title claims description 37
- 150000007524 organic acids Chemical class 0.000 claims abstract description 47
- 239000000243 solution Substances 0.000 claims abstract description 44
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 37
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007864 aqueous solution Substances 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 150000003839 salts Chemical class 0.000 claims abstract description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 48
- -1 organic acid salt Chemical class 0.000 claims description 34
- 239000007788 liquid Substances 0.000 claims description 14
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N oxalic acid group Chemical group C(C(=O)O)(=O)O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
- 235000019253 formic acid Nutrition 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 4
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 229960004889 salicylic acid Drugs 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- 235000005985 organic acids Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 229960002446 octanoic acid Drugs 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 229940005605 valeric acid Drugs 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 28
- 230000003647 oxidation Effects 0.000 abstract description 14
- 238000007254 oxidation reaction Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 14
- 239000011259 mixed solution Substances 0.000 abstract description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000908 ammonium hydroxide Substances 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 4
- 238000007598 dipping method Methods 0.000 abstract 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000010419 fine particle Substances 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000003929 acidic solution Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000005416 organic matter Substances 0.000 description 5
- 230000000536 complexating effect Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
금속 불순물의 농도(x 109원자/cm2) | |||||
Al | Fe | Ni | Cu | Zn | |
실시예 1 | 9.4 | 〈1 | 〈1 | 〈1 | 〈1 |
실시예 2 | 〈1 | 〈1 | 〈1 | 〈1 | 〈1 |
실시예 3 | 5.0 | 〈1 | 〈1 | 〈1 | 〈1 |
실시예 4 | 14.0 | 〈1 | 〈1 | 〈1 | 〈1 |
실시예 5 | 〈1 | 〈1 | 〈1 | 〈1 | 2.9 |
실시예 6 | 9.4 | 11.0 | 〈1 | 〈1 | 〈1 |
실시예 7 | 19.0 | 〈1 | 〈1 | 6.8 | 〈1 |
비교예 | 110.0 | 22.0 | 〈1 | 〈1 | 5.0 |
Claims (8)
- 반도체 기판을 산화 환원시키는 공정(11), 상기 산화 환원된 반도체 기판을 산화시키는 공정(12), 상기 산화된 반도체 기판을 환원시키는 공정(13), 상기 환원된 반도체 기판을 헹구는 공정(14), 및 상기 헹구어진 반도체 기판을 다시 산화시키는 공정(15)을 포함하는 반도체 기판의 세정 방법.
- 제1항에 있어서, 반도체 기판의 산화가 용존 오존 수용액, 질산 또는 과산화수소수 중 임의의 1 종 또는 2 종 이상을 혼합한 산화액에 침지시킴으로써 수행되는 세정 방법.
- 제1항에 있어서, 반도체 기판의 환원이 카르복실기를 함유하는 유기산 또는 유기산염과 불화수소산의 혼합액에 침지시킴으로써 수행되는 세정 방법.
- 제1항에 있어서, 반도체 기판을 헹구는 것이 카르복실기를 함유하는 유기산 또는 유기산염을 함유하는 액 또는 유기산 또는 유기산염과 불화수소산의 혼합액에 침지시킴으로써 수행되는 세정 방법.
- 제3항에 있어서, 불화수소산 농도가 0.005 내지 0.25 중량%인 세정 방법.
- 제4항에 있어서, 불화수소산 농도가 0.01 중량% 이하인 세정 방법.
- 제3항 또는 제4항에 있어서, 유기산 또는 유기산염의 농도가 0.0001 중량% 이상인 세정 방법.
- 제3항 또는 제4항에 있어서, 유기산 또는 유기산염이 옥살산, 시트르산, 숙신산, 에틸렌디아민테트라아세트산, 타르타르산, 살리실산, 포름산, 말레산, 아세트산, 프로피온산, 부티르산, 발레르산, 카프로산, 에난트산, 카프릴산, 벤조산, 아크릴산, 아디프산, 말론산, 말산, 글리콜산, 프탈산, 테레프탈산 및 푸마르산으로 이루어지는 군에서 선택된 1 종 또는 2 종 이상의 유기산 또는 그의 염인 세정 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP98-243008 | 1998-08-28 | ||
JP24300898 | 1998-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000017572A true KR20000017572A (ko) | 2000-03-25 |
KR100340274B1 KR100340274B1 (ko) | 2002-06-12 |
Family
ID=17097527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990035777A KR100340274B1 (ko) | 1998-08-28 | 1999-08-27 | 반도체 기판의 세정 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6146467A (ko) |
EP (1) | EP0982765B1 (ko) |
KR (1) | KR100340274B1 (ko) |
CN (1) | CN1119831C (ko) |
DE (1) | DE69916728T2 (ko) |
TW (1) | TW424274B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100564427B1 (ko) * | 2000-12-20 | 2006-03-28 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 세정방법 |
KR100829597B1 (ko) * | 2006-11-10 | 2008-05-14 | 삼성전자주식회사 | 반도체 장치의 세정 방법 및 제조 방법 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19741465A1 (de) * | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
DE69916728T2 (de) * | 1998-08-28 | 2005-04-28 | Mitsubishi Materials Corp. | Verfahren zur Reinigung eines Halbleitersubstrats |
US6162565A (en) * | 1998-10-23 | 2000-12-19 | International Business Machines Corporation | Dilute acid rinse after develop for chrome etch |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
JP3488158B2 (ja) * | 1999-12-28 | 2004-01-19 | Necエレクトロニクス株式会社 | ウエハの洗浄方法 |
US6503333B2 (en) * | 2000-11-30 | 2003-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for cleaning semiconductor wafers with ozone-containing solvent |
US6867148B2 (en) * | 2001-05-16 | 2005-03-15 | Micron Technology, Inc. | Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions |
EP1389496A1 (en) * | 2001-05-22 | 2004-02-18 | Mitsubishi Chemical Corporation | Method for cleaning surface of substrate |
CN1314084C (zh) * | 2003-02-20 | 2007-05-02 | 松下电器产业株式会社 | 蚀刻方法、蚀刻装置以及半导体器件的制造方法 |
JP2006016249A (ja) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | AlxGayIn1−x−yN基板とAlxGayIn1−x−yN基板の洗浄方法 |
CN100349266C (zh) * | 2004-07-23 | 2007-11-14 | 王文 | 高效能臭氧水清洗半导体晶圆的系统及其方法 |
US20110018105A1 (en) * | 2005-05-17 | 2011-01-27 | Sumitomo Electric Industries, Ltd. | Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices |
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- 1999-08-23 DE DE69916728T patent/DE69916728T2/de not_active Expired - Lifetime
- 1999-08-23 EP EP99116176A patent/EP0982765B1/en not_active Expired - Lifetime
- 1999-08-26 TW TW088114582A patent/TW424274B/zh not_active IP Right Cessation
- 1999-08-27 KR KR1019990035777A patent/KR100340274B1/ko not_active IP Right Cessation
- 1999-08-27 US US09/384,143 patent/US6146467A/en not_active Expired - Lifetime
- 1999-08-27 CN CN99121769A patent/CN1119831C/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100564427B1 (ko) * | 2000-12-20 | 2006-03-28 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 세정방법 |
KR100829597B1 (ko) * | 2006-11-10 | 2008-05-14 | 삼성전자주식회사 | 반도체 장치의 세정 방법 및 제조 방법 |
US7582539B2 (en) | 2006-11-10 | 2009-09-01 | Samsung Electronics Co., Ltd. | Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same |
Also Published As
Publication number | Publication date |
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DE69916728T2 (de) | 2005-04-28 |
EP0982765B1 (en) | 2004-04-28 |
TW424274B (en) | 2001-03-01 |
DE69916728D1 (de) | 2004-06-03 |
CN1250224A (zh) | 2000-04-12 |
EP0982765A2 (en) | 2000-03-01 |
EP0982765A3 (en) | 2000-04-19 |
CN1119831C (zh) | 2003-08-27 |
KR100340274B1 (ko) | 2002-06-12 |
US6146467A (en) | 2000-11-14 |
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