DE60042993D1 - Verfahren zum thermischen Behandeln eines Substrates - Google Patents

Verfahren zum thermischen Behandeln eines Substrates

Info

Publication number
DE60042993D1
DE60042993D1 DE60042993T DE60042993T DE60042993D1 DE 60042993 D1 DE60042993 D1 DE 60042993D1 DE 60042993 T DE60042993 T DE 60042993T DE 60042993 T DE60042993 T DE 60042993T DE 60042993 D1 DE60042993 D1 DE 60042993D1
Authority
DE
Germany
Prior art keywords
substrate
thermal treatment
thermal
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042993T
Other languages
English (en)
Inventor
Ryan C Boas
Ajit Balakrishna
Benjamin B Bierman
Brian L Haas
Dean Jennings
Wolfgang R Aderhold
Sundar Ramamurthy
Abhilash Mayar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/350,415 external-priority patent/US6215106B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60042993D1 publication Critical patent/DE60042993D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
DE60042993T 1999-07-08 2000-07-07 Verfahren zum thermischen Behandeln eines Substrates Expired - Lifetime DE60042993D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/350,415 US6215106B1 (en) 1997-06-30 1999-07-08 Thermally processing a substrate
US09/611,349 US6803546B1 (en) 1999-07-08 2000-07-06 Thermally processing a substrate

Publications (1)

Publication Number Publication Date
DE60042993D1 true DE60042993D1 (de) 2009-11-05

Family

ID=26996606

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042993T Expired - Lifetime DE60042993D1 (de) 1999-07-08 2000-07-07 Verfahren zum thermischen Behandeln eines Substrates

Country Status (6)

Country Link
US (1) US6803546B1 (de)
EP (1) EP1067587B1 (de)
JP (1) JP4953497B2 (de)
KR (1) KR100709517B1 (de)
DE (1) DE60042993D1 (de)
TW (1) TW479298B (de)

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US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
JP4549484B2 (ja) * 2000-03-30 2010-09-22 東京エレクトロン株式会社 枚葉式熱処理装置
JP2001297995A (ja) * 2000-04-13 2001-10-26 Nec Corp 回路製造方法および装置
JP2004503108A (ja) * 2000-07-06 2004-01-29 アプライド　マテリアルズ　インコーポレイテッド 半導体基板の熱処理
EP1393360A1 (de) * 2001-06-08 2004-03-03 Aixtron AG Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen gegenständen
KR100377011B1 (ko) * 2002-11-01 2003-03-19 코닉 시스템 주식회사 급속 열처리 장치의 히터 모듈
CN100430803C (zh) * 2003-01-30 2008-11-05 日本写真印刷株式会社 加热装置
US7293986B2 (en) * 2003-05-06 2007-11-13 Mrl Industries, Inc. Vestibule assembly for a heat treatment furnace
JP3857283B2 (ja) * 2004-07-22 2006-12-13 株式会社エピクエスト 面発光レーザ作製用酸化装置
JP4589092B2 (ja) * 2004-12-03 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法
US8282768B1 (en) * 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US20060291833A1 (en) * 2005-06-01 2006-12-28 Mattson Techonology, Inc. Switchable reflector wall concept
US7554103B2 (en) * 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US7928019B2 (en) * 2007-08-10 2011-04-19 Micron Technology, Inc. Semiconductor processing
JP5719710B2 (ja) * 2011-07-11 2015-05-20 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US8980767B2 (en) * 2012-01-13 2015-03-17 Applied Materials, Inc. Methods and apparatus for processing a substrate
DE102012202099A1 (de) * 2012-02-13 2013-08-14 Siltronic Ag Verfahren zum Abkühlen von Scheiben aus Halbleitermaterial
US10256121B2 (en) * 2015-07-06 2019-04-09 Tokyo Electron Limited Heated stage with variable thermal emissivity method and apparatus
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP6832154B2 (ja) * 2016-12-27 2021-02-24 東京エレクトロン株式会社 パージ方法
DE102017221778A1 (de) 2017-12-04 2019-06-06 Siemens Aktiengesellschaft Kühlkörper für eine elektronische Komponente, elektronische Baugruppe mit einem solchen Kühlkörper und Verfahren zum Erzeugen eines solchen Kühlkörpers
CN112272865B (zh) 2019-03-14 2022-05-27 玛特森技术公司 具有温度不均匀性控制的热处理系统
DE102021115349A1 (de) * 2020-07-14 2022-01-20 Infineon Technologies Ag Substrat-prozesskammer und prozessgasströmungsablenker zur verwendung in der prozesskammer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US4818327A (en) 1987-07-16 1989-04-04 Texas Instruments Incorporated Wafer processing apparatus
JP2635153B2 (ja) * 1989-03-15 1997-07-30 株式会社日立製作所 真空処理方法及び装置
US5620525A (en) 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5181556A (en) 1991-09-20 1993-01-26 Intevac, Inc. System for substrate cooling in an evacuated environment
JPH06252094A (ja) * 1993-02-22 1994-09-09 Hitachi Ltd 半導体製造装置および半導体製造方法
US5318801A (en) * 1993-05-18 1994-06-07 United States Of America As Represented By The Secretary Of The Navy Substrate temperature control apparatus and technique for CVD reactors
KR100274754B1 (ko) * 1993-08-18 2000-12-15 히가시 데쓰로 성막장치 및 성막방법
TW277139B (de) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
JPH07307258A (ja) * 1994-05-10 1995-11-21 Toshiba Corp 熱処理用の温度補償部材、その温度補償部材を用いたウェハの熱処理方法及びその装置
JP3451137B2 (ja) * 1994-08-29 2003-09-29 大日本スクリーン製造株式会社 基板の熱処理装置
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
JP3553204B2 (ja) * 1995-04-28 2004-08-11 アネルバ株式会社 Ｃｖｄ装置
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
US6046439A (en) 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
NL1003538C2 (nl) 1996-07-08 1998-01-12 Advanced Semiconductor Mat Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.
US5834068A (en) * 1996-07-12 1998-11-10 Applied Materials, Inc. Wafer surface temperature control for deposition of thin films
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6035100A (en) * 1997-05-16 2000-03-07 Applied Materials, Inc. Reflector cover for a semiconductor processing chamber
US6054688A (en) 1997-06-25 2000-04-25 Brooks Automation, Inc. Hybrid heater with ceramic foil serrated plate and gas assist
US6280790B1 (en) * 1997-06-30 2001-08-28 Applied Materials, Inc. Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
TW429271B (en) * 1997-10-10 2001-04-11 Applied Materials Inc Introducing process fluid over rotating substrates
JPH11145217A (ja) * 1997-11-13 1999-05-28 Matsushita Electric Ind Co Ltd ウェハ一括型測定検査のための温度制御方法及びその装置ならびにバーンイン装置
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
US6108937A (en) * 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
US6803546B1 (en) 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
JP2004503108A (ja) * 2000-07-06 2004-01-29 アプライド　マテリアルズ　インコーポレイテッド 半導体基板の熱処理

Also Published As

Publication number Publication date
US6803546B1 (en) 2004-10-12
KR20010015254A (ko) 2001-02-26
EP1067587A2 (de) 2001-01-10
JP4953497B2 (ja) 2012-06-13
EP1067587B1 (de) 2009-09-23
JP2001196324A (ja) 2001-07-19
TW479298B (en) 2002-03-11
EP1067587A3 (de) 2006-03-29
KR100709517B1 (ko) 2007-04-20

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