DE60006713D1 - Verfahren zum steuern des wachstums eines halbleiterkristalls - Google Patents

Verfahren zum steuern des wachstums eines halbleiterkristalls

Info

Publication number
DE60006713D1
DE60006713D1 DE60006713T DE60006713T DE60006713D1 DE 60006713 D1 DE60006713 D1 DE 60006713D1 DE 60006713 T DE60006713 T DE 60006713T DE 60006713 T DE60006713 T DE 60006713T DE 60006713 D1 DE60006713 D1 DE 60006713D1
Authority
DE
Germany
Prior art keywords
growth
controlling
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60006713T
Other languages
English (en)
Other versions
DE60006713T2 (de
Inventor
L Kimbel
Robert R Wyand Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60006713D1 publication Critical patent/DE60006713D1/de
Application granted granted Critical
Publication of DE60006713T2 publication Critical patent/DE60006713T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60006713T 1999-10-19 2000-09-21 Verfahren zum steuern des wachstums eines halbleiterkristalls Expired - Fee Related DE60006713T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/421,187 US6203611B1 (en) 1999-10-19 1999-10-19 Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
US421187 1999-10-19
PCT/US2000/025897 WO2001029292A1 (en) 1999-10-19 2000-09-21 Method of controlling growth of a semiconductor crystal

Publications (2)

Publication Number Publication Date
DE60006713D1 true DE60006713D1 (de) 2003-12-24
DE60006713T2 DE60006713T2 (de) 2004-08-12

Family

ID=23669527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60006713T Expired - Fee Related DE60006713T2 (de) 1999-10-19 2000-09-21 Verfahren zum steuern des wachstums eines halbleiterkristalls

Country Status (6)

Country Link
US (1) US6203611B1 (de)
EP (1) EP1230447B1 (de)
JP (1) JP2003512282A (de)
KR (1) KR20020059631A (de)
DE (1) DE60006713T2 (de)
WO (1) WO2001029292A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3572998B2 (ja) * 1999-06-04 2004-10-06 三菱住友シリコン株式会社 単結晶シリコンの製造方法
US20030033972A1 (en) * 2001-08-15 2003-02-20 Memc Electronic Materials, Inc. Controlled crown growth process for czochralski single crystal silicon
KR100700082B1 (ko) * 2005-06-14 2007-03-28 주식회사 실트론 결정 성장된 잉곳의 품질평가 방법
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
US20100024717A1 (en) * 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
US8012255B2 (en) 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
CN102124150B (zh) * 2008-08-18 2013-07-31 长青太阳能股份有限公司 控制气载污染物跨晶带表面的转移
CN101748477B (zh) * 2008-12-19 2013-10-23 北京太克易航科贸有限公司 用于单晶硅生长过程控制的智能pid控制方法及其系统
JP5446277B2 (ja) * 2009-01-13 2014-03-19 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
CN103562443B (zh) 2011-03-23 2016-05-18 丰田自动车株式会社 SiC单晶的制造方法和制造装置
US9624599B2 (en) 2011-10-31 2017-04-18 Toyota Jidosha Kabushiki Kaisha SiC single crystal manufacturing method using alternating states of supersaturation
DE102013210687B4 (de) 2013-06-07 2018-12-06 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
CN105895716A (zh) * 2016-06-22 2016-08-24 安徽国成顺风风力发电有限公司 一种高能量转化率太阳能电池材料及其制备方法
DE102016219605A1 (de) * 2016-10-10 2018-04-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
CN107417074B (zh) * 2017-08-28 2020-04-14 长飞光纤光缆股份有限公司 一种石英锭的制备方法、装置及系统
EP4008813A1 (de) * 2020-12-04 2022-06-08 Siltronic AG Verfahren zum ziehen eines einkristalls nach der czochralski-methode
CN115404542B (zh) * 2021-05-28 2024-03-01 隆基绿能科技股份有限公司 单晶直拉生长方法、装置、设备及计算机可读存储介质

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63242991A (ja) 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd 結晶径制御方法
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH0717475B2 (ja) * 1991-02-14 1995-03-01 信越半導体株式会社 単結晶ネック部育成自動制御方法
US5178720A (en) 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JP2966322B2 (ja) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 シリコン単結晶インゴット及びその製造方法
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US5653799A (en) 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
EP0821082B1 (de) * 1996-06-27 1999-01-20 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
US5846318A (en) 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
US5882402A (en) 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal

Also Published As

Publication number Publication date
EP1230447B1 (de) 2003-11-19
EP1230447A1 (de) 2002-08-14
WO2001029292A1 (en) 2001-04-26
DE60006713T2 (de) 2004-08-12
US6203611B1 (en) 2001-03-20
KR20020059631A (ko) 2002-07-13
JP2003512282A (ja) 2003-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee