DE69905193D1 - Verfahren zur steuerung der züchtung eines siliziumkristalles - Google Patents
Verfahren zur steuerung der züchtung eines siliziumkristallesInfo
- Publication number
- DE69905193D1 DE69905193D1 DE69905193T DE69905193T DE69905193D1 DE 69905193 D1 DE69905193 D1 DE 69905193D1 DE 69905193 T DE69905193 T DE 69905193T DE 69905193 T DE69905193 T DE 69905193T DE 69905193 D1 DE69905193 D1 DE 69905193D1
- Authority
- DE
- Germany
- Prior art keywords
- breeding
- controlling
- silicon crystal
- silicon
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/172,546 US6171391B1 (en) | 1998-10-14 | 1998-10-14 | Method and system for controlling growth of a silicon crystal |
PCT/US1999/022715 WO2000022200A1 (en) | 1998-10-14 | 1999-09-30 | Method and system for controlling growth of a silicon crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69905193D1 true DE69905193D1 (de) | 2003-03-06 |
DE69905193T2 DE69905193T2 (de) | 2004-01-15 |
Family
ID=22628164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69905193T Expired - Fee Related DE69905193T2 (de) | 1998-10-14 | 1999-09-30 | Verfahren zur steuerung der züchtung eines siliziumkristalles |
Country Status (8)
Country | Link |
---|---|
US (1) | US6171391B1 (de) |
EP (1) | EP1133592B1 (de) |
JP (1) | JP2002527341A (de) |
KR (1) | KR20010080008A (de) |
CN (1) | CN1323364A (de) |
DE (1) | DE69905193T2 (de) |
TW (1) | TW444073B (de) |
WO (1) | WO2000022200A1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3024643B1 (ja) * | 1998-11-06 | 2000-03-21 | 住友金属工業株式会社 | 結晶断面形状測定方法 |
US6869477B2 (en) * | 2000-02-22 | 2005-03-22 | Memc Electronic Materials, Inc. | Controlled neck growth process for single crystal silicon |
TW498402B (en) * | 2000-04-26 | 2002-08-11 | Mitsubishi Material Silicon | Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defect of a single crystal |
EP1356139B1 (de) | 2001-01-26 | 2006-08-09 | MEMC Electronic Materials, Inc. | Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist |
US20030033972A1 (en) * | 2001-08-15 | 2003-02-20 | Memc Electronic Materials, Inc. | Controlled crown growth process for czochralski single crystal silicon |
KR20030020474A (ko) * | 2001-08-29 | 2003-03-10 | 주식회사 실트론 | 잉곳 성장 장치 제어 시스템 |
US20030047130A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
US6866713B2 (en) * | 2001-10-26 | 2005-03-15 | Memc Electronic Materials, Inc. | Seed crystals for pulling single crystal silicon |
US7227983B1 (en) * | 2002-05-30 | 2007-06-05 | The Regents Of The University Of California | Automated macromolecular crystal detection system and method |
KR100764394B1 (ko) | 2002-11-12 | 2007-10-05 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법 |
US7282094B2 (en) * | 2003-05-28 | 2007-10-16 | Sumco Corporation | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal |
CN100371507C (zh) * | 2005-03-28 | 2008-02-27 | 荀建华 | 晶体等径生长的控制系统及其方法 |
JP4929817B2 (ja) * | 2006-04-25 | 2012-05-09 | 信越半導体株式会社 | 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置 |
JP4784401B2 (ja) * | 2006-05-30 | 2011-10-05 | 株式会社Sumco | シリコン単結晶の育成プロセスにおける融液の液面位置監視装置 |
CN100436656C (zh) * | 2006-12-28 | 2008-11-26 | 西安理工大学 | 单晶炉中籽晶与熔融硅液面接触的检测方法 |
CN100436658C (zh) * | 2006-12-28 | 2008-11-26 | 西安理工大学 | 直拉法单晶硅生长过程中的熔体液面位置检测方法 |
CN100436657C (zh) * | 2006-12-28 | 2008-11-26 | 西安理工大学 | 基于霍夫变换的直拉单晶硅棒直径的测量方法 |
JP5167651B2 (ja) * | 2007-02-08 | 2013-03-21 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法 |
KR20090034534A (ko) * | 2007-10-04 | 2009-04-08 | 주식회사 실트론 | 극저결함 반도체 단결정의 제조방법 및 그 제조 장치 |
US8221545B2 (en) * | 2008-07-31 | 2012-07-17 | Sumco Phoenix Corporation | Procedure for in-situ determination of thermal gradients at the crystal growth front |
US20100024717A1 (en) * | 2008-07-31 | 2010-02-04 | Benno Orschel | Reversed action diameter control in a semiconductor crystal growth system |
US8012255B2 (en) * | 2008-07-31 | 2011-09-06 | Sumco Phoenix Corporation | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process |
JP4930487B2 (ja) * | 2008-10-21 | 2012-05-16 | 信越半導体株式会社 | 融液面と炉内構造物の下端部との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びに単結晶の製造方法及び単結晶製造装置 |
CN101748478B (zh) * | 2008-12-15 | 2013-07-31 | 有研半导体材料股份有限公司 | 一种测量坩埚中硅熔体水平面相对高度的方法 |
US8545623B2 (en) * | 2009-06-18 | 2013-10-01 | Sumco Phoenix Corporation | Method and apparatus for controlling the growth process of a monocrystalline silicon ingot |
JP5708171B2 (ja) * | 2010-04-26 | 2015-04-30 | 株式会社Sumco | シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法 |
MY159737A (en) | 2010-09-03 | 2017-01-31 | Gtat Ip Holding Llc | Silicon single crystal doped with gallium, indium, or aluminum |
JP5678635B2 (ja) * | 2010-12-13 | 2015-03-04 | 株式会社Sumco | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
JP2012240862A (ja) * | 2011-05-16 | 2012-12-10 | Mitsubishi Materials Techno Corp | 単結晶インゴットの製造装置および液面位置測定方法 |
JP6078974B2 (ja) | 2012-04-04 | 2017-02-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN102995111B (zh) * | 2012-11-07 | 2015-05-27 | 北京七星华创电子股份有限公司 | 单晶炉非接触式硅料液面位置测量方法及装置 |
KR101516586B1 (ko) * | 2013-09-16 | 2015-05-04 | 주식회사 엘지실트론 | 열차폐재 및 이를 포함하는 실리콘 단결정 잉곳 제조장치 |
JP6428461B2 (ja) * | 2015-04-17 | 2018-11-28 | 株式会社Sumco | 種結晶の温度測定方法、および単結晶の製造方法 |
JP6465008B2 (ja) * | 2015-12-07 | 2019-02-06 | 株式会社Sumco | シリコン単結晶の製造方法 |
KR101874712B1 (ko) * | 2016-12-07 | 2018-07-04 | 에스케이실트론 주식회사 | 잉곳 성장 제어장치 및 그 제어방법 |
JP6885301B2 (ja) * | 2017-11-07 | 2021-06-09 | 株式会社Sumco | 単結晶の製造方法及び装置 |
CN112281208B (zh) * | 2019-07-22 | 2022-04-05 | 隆基绿能科技股份有限公司 | 一种液口距确定方法、装置及单晶炉 |
CN113215651B (zh) * | 2021-04-08 | 2022-11-22 | 银川隆基光伏科技有限公司 | 一种拉晶控制方法和设备、单晶炉以及计算机存储介质 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740563A (en) | 1971-06-25 | 1973-06-19 | Monsanto Co | Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals |
US4350557A (en) | 1974-06-14 | 1982-09-21 | Ferrofluidics Corporation | Method for circumferential dimension measuring and control in crystal rod pulling |
US4710258A (en) | 1984-11-30 | 1987-12-01 | General Signal Corporation | System for controlling the diameter of a crystal in a crystal growing furnace |
JPS63239181A (ja) | 1987-03-26 | 1988-10-05 | Kyushu Denshi Kinzoku Kk | Cz炉内の結晶直径測定方法 |
JPS63256594A (ja) | 1987-04-13 | 1988-10-24 | Kyushu Denshi Kinzoku Kk | Cz炉内の結晶直径計測方法 |
JPS6483595A (en) * | 1987-09-25 | 1989-03-29 | Shinetsu Handotai Kk | Device for measuring crystal diameter |
JPH03112885A (ja) | 1989-09-26 | 1991-05-14 | Kawasaki Steel Corp | 単結晶引き上げ時の結晶ダイの検知方法 |
JPH06102590B2 (ja) | 1990-02-28 | 1994-12-14 | 信越半導体株式会社 | Cz法による単結晶ネック部育成自動制御方法 |
JP2601930B2 (ja) | 1990-03-29 | 1997-04-23 | 信越半導体株式会社 | 単結晶ネツク部直径制御方法及び装置 |
JPH0663824B2 (ja) | 1990-04-29 | 1994-08-22 | 信越半導体株式会社 | 湯面振動測定方法及び装置 |
JPH0726817B2 (ja) | 1990-07-28 | 1995-03-29 | 信越半導体株式会社 | 結晶径測定装置 |
JPH0717475B2 (ja) | 1991-02-14 | 1995-03-01 | 信越半導体株式会社 | 単結晶ネック部育成自動制御方法 |
JPH04300283A (ja) | 1991-03-27 | 1992-10-23 | Osaka Titanium Co Ltd | Cz法における液面レベル測定法 |
US5178720A (en) | 1991-08-14 | 1993-01-12 | Memc Electronic Materials, Inc. | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
US5286461A (en) | 1991-09-20 | 1994-02-15 | Ferrofluidics Corporation | Method and apparatus for melt level detection in czochralski crystal growth systems |
DE4231162C2 (de) | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
JP2538748B2 (ja) | 1992-11-27 | 1996-10-02 | 信越半導体株式会社 | 結晶径測定装置 |
US5653799A (en) | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
EP0821082B1 (de) * | 1996-06-27 | 1999-01-20 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Verfahren und Vorrichtung zur Steuerung des Kristallwachstums |
JPH1053486A (ja) * | 1996-08-06 | 1998-02-24 | Komatsu Electron Metals Co Ltd | 単結晶引上装置 |
JP3367853B2 (ja) | 1997-02-26 | 2003-01-20 | シャープ株式会社 | 反射型液晶表示装置 |
US5846318A (en) | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
-
1998
- 1998-10-14 US US09/172,546 patent/US6171391B1/en not_active Expired - Lifetime
-
1999
- 1999-09-30 DE DE69905193T patent/DE69905193T2/de not_active Expired - Fee Related
- 1999-09-30 JP JP2000576085A patent/JP2002527341A/ja not_active Withdrawn
- 1999-09-30 EP EP99954694A patent/EP1133592B1/de not_active Expired - Lifetime
- 1999-09-30 WO PCT/US1999/022715 patent/WO2000022200A1/en not_active Application Discontinuation
- 1999-09-30 KR KR1020017004324A patent/KR20010080008A/ko not_active Application Discontinuation
- 1999-09-30 CN CN99812022A patent/CN1323364A/zh active Pending
- 1999-10-14 TW TW088117812A patent/TW444073B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2000022200A1 (en) | 2000-04-20 |
EP1133592A1 (de) | 2001-09-19 |
CN1323364A (zh) | 2001-11-21 |
EP1133592B1 (de) | 2003-01-29 |
US6171391B1 (en) | 2001-01-09 |
KR20010080008A (ko) | 2001-08-22 |
TW444073B (en) | 2001-07-01 |
JP2002527341A (ja) | 2002-08-27 |
DE69905193T2 (de) | 2004-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |