DE69940385D1 - Verfahren zur Züchtung eines Einkristalls von Siliziumcarbid - Google Patents
Verfahren zur Züchtung eines Einkristalls von SiliziumcarbidInfo
- Publication number
- DE69940385D1 DE69940385D1 DE69940385T DE69940385T DE69940385D1 DE 69940385 D1 DE69940385 D1 DE 69940385D1 DE 69940385 T DE69940385 T DE 69940385T DE 69940385 T DE69940385 T DE 69940385T DE 69940385 D1 DE69940385 D1 DE 69940385D1
- Authority
- DE
- Germany
- Prior art keywords
- growing
- single crystal
- silicon carbide
- carbide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36856598 | 1998-12-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69940385D1 true DE69940385D1 (de) | 2009-03-19 |
Family
ID=18492161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69940385T Expired - Lifetime DE69940385D1 (de) | 1998-12-25 | 1999-12-24 | Verfahren zur Züchtung eines Einkristalls von Siliziumcarbid |
Country Status (5)
Country | Link |
---|---|
EP (2) | EP1803840B1 (de) |
JP (1) | JP4514339B2 (de) |
AU (1) | AU1801100A (de) |
DE (1) | DE69940385D1 (de) |
WO (1) | WO2000039372A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW548352B (en) * | 2000-03-13 | 2003-08-21 | Ii Vi Inc | Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
JP2012046424A (ja) * | 2000-12-28 | 2012-03-08 | Bridgestone Corp | 炭化ケイ素単結晶 |
JP4903946B2 (ja) * | 2000-12-28 | 2012-03-28 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造方法及び製造装置 |
JP4619567B2 (ja) * | 2001-04-10 | 2011-01-26 | 株式会社ブリヂストン | 炭化ケイ素単結晶及びその製造方法 |
US7553373B2 (en) | 2001-06-15 | 2009-06-30 | Bridgestone Corporation | Silicon carbide single crystal and production thereof |
JP4731766B2 (ja) * | 2001-09-19 | 2011-07-27 | 株式会社ブリヂストン | 炭化ケイ素単結晶及びその製造方法 |
JP2007204309A (ja) * | 2006-02-01 | 2007-08-16 | Matsushita Electric Ind Co Ltd | 単結晶成長装置及び単結晶成長方法 |
JP5087489B2 (ja) * | 2008-07-23 | 2012-12-05 | 株式会社ブリヂストン | 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法 |
WO2010077639A2 (en) | 2008-12-08 | 2010-07-08 | Ii-Vi Incorporated | Improved axial gradient transport (agt) growth process and apparatus utilizing resistive heating |
JP5071406B2 (ja) * | 2009-02-13 | 2012-11-14 | トヨタ自動車株式会社 | 溶液法によるSiC単結晶成長用種結晶の複合接着方法 |
JP2010241628A (ja) * | 2009-04-03 | 2010-10-28 | Bridgestone Corp | 炭化珪素単結晶の製造装置 |
JP5218431B2 (ja) | 2009-07-21 | 2013-06-26 | トヨタ自動車株式会社 | 溶液法による単結晶成長用種結晶軸 |
JP5666150B2 (ja) | 2010-02-26 | 2015-02-12 | 昭和電工株式会社 | 遮蔽部材及びそれを備えた単結晶成長装置 |
JP5560862B2 (ja) * | 2010-04-07 | 2014-07-30 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴットの製造装置 |
JP5656623B2 (ja) * | 2010-12-28 | 2015-01-21 | トヨタ自動車株式会社 | SiC単結晶の製造装置および製造方法 |
JP5545268B2 (ja) * | 2011-05-18 | 2014-07-09 | 学校法人関西学院 | SiCマルチチップ基板 |
CN102703966B (zh) * | 2012-05-28 | 2015-11-04 | 中国科学院力学研究所 | 一种籽晶温度梯度方法生长碳化硅单晶的装置 |
JP6387895B2 (ja) * | 2014-09-24 | 2018-09-12 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
KR101655242B1 (ko) * | 2014-12-23 | 2016-09-08 | 재단법인 포항산업과학연구원 | 반절연 탄화규소 단결정 성장장치 |
CN105642814B (zh) * | 2016-03-04 | 2017-07-28 | 西北工业大学 | 一种用于飞行器翼面类结构件半自动电磁铆接系统 |
JP6796941B2 (ja) * | 2016-03-30 | 2020-12-09 | 昭和電工株式会社 | 炭化珪素単結晶インゴットの製造方法 |
CN105696079A (zh) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | 一种精密控制6英寸碳化硅单晶生长温场的方法 |
CN106119954B (zh) * | 2016-08-31 | 2018-11-06 | 台州市一能科技有限公司 | 一种碳化硅单晶制造装置 |
JP7113658B2 (ja) | 2018-05-11 | 2022-08-05 | 昭和電工株式会社 | 遮蔽部材及びそれを備えた単結晶成長装置 |
WO2020241578A1 (ja) * | 2019-05-27 | 2020-12-03 | 昭和電工株式会社 | SiC単結晶インゴットの製造方法 |
JP7393900B2 (ja) * | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
JP2023524962A (ja) * | 2020-05-06 | 2023-06-14 | 眉山博雅新材料股▲ふん▼有限公司 | 結晶の製造装置及び成長方法 |
US20220251725A1 (en) | 2021-02-09 | 2022-08-11 | National Chung Shan Institute Of Science And Technology | Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size |
CN114574954B (zh) * | 2022-01-26 | 2023-02-14 | 江苏集芯半导体硅材料研究院有限公司 | 晶体生长装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230727C2 (de) * | 1982-08-18 | 1987-02-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von Einkristallen aus Siliziumkarbid SiC |
JPH05178698A (ja) * | 1991-12-27 | 1993-07-20 | Sharp Corp | 炭化珪素バルク単結晶の製造装置及び製造方法 |
JPH09110584A (ja) * | 1995-10-25 | 1997-04-28 | Sanyo Electric Co Ltd | 単結晶成長方法 |
JP3491429B2 (ja) * | 1996-02-14 | 2004-01-26 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
JP3898278B2 (ja) * | 1997-04-21 | 2007-03-28 | 昭和電工株式会社 | 炭化ケイ素単結晶の製造方法及びその製造装置 |
-
1999
- 1999-12-24 EP EP07006992A patent/EP1803840B1/de not_active Expired - Lifetime
- 1999-12-24 AU AU18011/00A patent/AU1801100A/en not_active Abandoned
- 1999-12-24 DE DE69940385T patent/DE69940385D1/de not_active Expired - Lifetime
- 1999-12-24 WO PCT/JP1999/007299 patent/WO2000039372A1/ja not_active Application Discontinuation
- 1999-12-24 EP EP99961385A patent/EP1164211A4/de not_active Withdrawn
- 1999-12-24 JP JP2000591254A patent/JP4514339B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4514339B2 (ja) | 2010-07-28 |
EP1164211A4 (de) | 2003-05-02 |
AU1801100A (en) | 2000-07-31 |
EP1803840B1 (de) | 2009-02-04 |
EP1803840A3 (de) | 2007-07-18 |
EP1164211A1 (de) | 2001-12-19 |
EP1803840A2 (de) | 2007-07-04 |
WO2000039372A1 (fr) | 2000-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |