DE60124452D1 - CVD Verfahren zum Herstellen von amorphem Silizium - Google Patents
CVD Verfahren zum Herstellen von amorphem SiliziumInfo
- Publication number
- DE60124452D1 DE60124452D1 DE60124452T DE60124452T DE60124452D1 DE 60124452 D1 DE60124452 D1 DE 60124452D1 DE 60124452 T DE60124452 T DE 60124452T DE 60124452 T DE60124452 T DE 60124452T DE 60124452 D1 DE60124452 D1 DE 60124452D1
- Authority
- DE
- Germany
- Prior art keywords
- amorphous silicon
- cvd method
- producing amorphous
- producing
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 title 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US591815 | 2000-06-12 | ||
US09/591,815 US6436488B1 (en) | 2000-06-12 | 2000-06-12 | Chemical vapor deposition method for amorphous silicon and resulting film |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60124452D1 true DE60124452D1 (de) | 2006-12-28 |
DE60124452T2 DE60124452T2 (de) | 2007-03-15 |
Family
ID=24368059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60124452T Expired - Fee Related DE60124452T2 (de) | 2000-06-12 | 2001-03-30 | CVD Verfahren zum Herstellen von amorphem Silizium |
Country Status (6)
Country | Link |
---|---|
US (1) | US6436488B1 (de) |
EP (1) | EP1164206B1 (de) |
JP (1) | JP2002047568A (de) |
KR (1) | KR100762063B1 (de) |
CN (2) | CN100557076C (de) |
DE (1) | DE60124452T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747773B2 (en) * | 2002-10-31 | 2004-06-08 | Agilent Technologies, Inc. | Method and structure for stub tunable resonant cavity for photonic crystals |
US6786968B2 (en) * | 2002-10-31 | 2004-09-07 | Agilent Technologies, Inc. | Method for low temperature photonic crystal structures |
WO2004088710A2 (en) * | 2003-04-02 | 2004-10-14 | Nkt Research & Innovation A/S | Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof |
JP2005123466A (ja) * | 2003-10-17 | 2005-05-12 | Sharp Corp | シリコン系薄膜光電変換装置の製造方法およびその方法により製造されたシリコン系薄膜光電変換装置 |
KR101057208B1 (ko) * | 2005-10-03 | 2011-08-16 | 샤프 가부시키가이샤 | 실리콘계 박막 광전 변환 장치, 그 제조 방법 및 그 제조장치 |
US20100178017A1 (en) * | 2006-10-06 | 2010-07-15 | Boris Kharas | Method for Improving Refractive Index Control in PECVD Deposited a-SiNy Films |
KR20100033091A (ko) * | 2008-09-19 | 2010-03-29 | 한국전자통신연구원 | 화학기상증착법에 의한 비정질 실리콘 박막의 증착방법 |
US20100116338A1 (en) * | 2008-11-07 | 2010-05-13 | United Solar Ovinic Llc | High quality semiconductor material |
JP5793398B2 (ja) * | 2011-10-28 | 2015-10-14 | 東京エレクトロン株式会社 | シード層の形成方法及びシリコン含有薄膜の成膜方法 |
CN102637780B (zh) * | 2012-04-27 | 2014-04-02 | 保定天威薄膜光伏有限公司 | 一种提高产业化硅薄膜电池组件性能的制备方法 |
CN103774116B (zh) * | 2012-10-19 | 2016-09-21 | 陕西拓日新能源科技有限公司 | 用于非晶硅电池沉积的等离子体气相沉积设备与方法 |
KR101489306B1 (ko) * | 2013-10-21 | 2015-02-11 | 주식회사 유진테크 | 어모퍼스 실리콘막의 증착 방법 및 증착 장치 |
CN104681639A (zh) * | 2013-12-02 | 2015-06-03 | 北京有色金属研究总院 | 一种基于柔性基底的多晶硅薄膜太阳能电池及其制备方法 |
CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
CN110970287B (zh) * | 2018-09-28 | 2022-12-02 | 长鑫存储技术有限公司 | 制备非晶硅薄膜的方法 |
CN109935640B (zh) * | 2019-04-02 | 2021-11-05 | 江苏微导纳米科技股份有限公司 | 一种晶体硅太阳能电池的镀膜方法 |
CN110779849B (zh) * | 2019-12-05 | 2022-05-03 | 成都中医药大学 | 一种非晶态二氧化硅比表面积的测定方法 |
CN112481606A (zh) * | 2020-11-10 | 2021-03-12 | 江苏杰太光电技术有限公司 | 一种pecvd沉积太阳能电池掺杂层的气源和系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
US4792460A (en) * | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
US5082696A (en) * | 1986-10-03 | 1992-01-21 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes |
US5338580A (en) * | 1988-11-15 | 1994-08-16 | Canon Kabushiki Kaisha | Method of preparation of functional deposited film by microwave plasma chemical vapor deposition |
US5324360A (en) * | 1991-05-21 | 1994-06-28 | Canon Kabushiki Kaisha | Method for producing non-monocrystalline semiconductor device and apparatus therefor |
US5670224A (en) * | 1992-11-13 | 1997-09-23 | Energy Conversion Devices, Inc. | Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates |
US5648293A (en) | 1993-07-22 | 1997-07-15 | Nec Corporation | Method of growing an amorphous silicon film |
EP0661731B1 (de) * | 1993-12-28 | 2000-05-31 | Applied Materials, Inc. | Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren |
JP3851686B2 (ja) * | 1996-06-08 | 2006-11-29 | キヤノンアネルバ株式会社 | プラズマcvdによる薄膜形成方法 |
KR19980055934A (ko) * | 1996-12-28 | 1998-09-25 | 김영환 | 반도체 소자의 층간 절연막 |
AUPP055497A0 (en) * | 1997-11-26 | 1997-12-18 | Pacific Solar Pty Limited | High rate deposition of amorphous silicon films |
-
2000
- 2000-06-12 US US09/591,815 patent/US6436488B1/en not_active Expired - Lifetime
-
2001
- 2001-03-30 DE DE60124452T patent/DE60124452T2/de not_active Expired - Fee Related
- 2001-03-30 EP EP01108183A patent/EP1164206B1/de not_active Expired - Lifetime
- 2001-06-11 KR KR1020010032585A patent/KR100762063B1/ko not_active IP Right Cessation
- 2001-06-12 CN CNB2005100559064A patent/CN100557076C/zh not_active Expired - Fee Related
- 2001-06-12 CN CNB01121189XA patent/CN1238555C/zh not_active Expired - Fee Related
- 2001-06-12 JP JP2001176532A patent/JP2002047568A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US6436488B1 (en) | 2002-08-20 |
KR20010111632A (ko) | 2001-12-19 |
EP1164206A3 (de) | 2003-11-05 |
CN1238555C (zh) | 2006-01-25 |
JP2002047568A (ja) | 2002-02-15 |
CN100557076C (zh) | 2009-11-04 |
EP1164206A2 (de) | 2001-12-19 |
EP1164206B1 (de) | 2006-11-15 |
KR100762063B1 (ko) | 2007-10-01 |
DE60124452T2 (de) | 2007-03-15 |
CN1657648A (zh) | 2005-08-24 |
CN1339617A (zh) | 2002-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE., SG |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |