DE10194791T1 - Verfahren zum Bilden von Halbleiterstrukturen - Google Patents

Verfahren zum Bilden von Halbleiterstrukturen

Info

Publication number
DE10194791T1
DE10194791T1 DE10194791T DE10194791T DE10194791T1 DE 10194791 T1 DE10194791 T1 DE 10194791T1 DE 10194791 T DE10194791 T DE 10194791T DE 10194791 T DE10194791 T DE 10194791T DE 10194791 T1 DE10194791 T1 DE 10194791T1
Authority
DE
Germany
Prior art keywords
semiconductor structures
forming semiconductor
forming
structures
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10194791T
Other languages
English (en)
Other versions
DE10194791B4 (de
Inventor
Leonard Forbes
Kie Ahn
Luan Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE10194791T1 publication Critical patent/DE10194791T1/de
Application granted granted Critical
Publication of DE10194791B4 publication Critical patent/DE10194791B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
DE10194791T 2000-01-06 2001-01-08 Verfahren zum Bilden von Halbleiterstrukturen Expired - Fee Related DE10194791B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/478,975 2000-01-06
US09/478,975 US6372618B2 (en) 2000-01-06 2000-01-06 Methods of forming semiconductor structures
PCT/US2001/000707 WO2001050507A1 (en) 2000-01-06 2001-01-08 Methods of forming semiconductor structures

Publications (2)

Publication Number Publication Date
DE10194791T1 true DE10194791T1 (de) 2003-01-16
DE10194791B4 DE10194791B4 (de) 2005-08-18

Family

ID=23902159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10194791T Expired - Fee Related DE10194791B4 (de) 2000-01-06 2001-01-08 Verfahren zum Bilden von Halbleiterstrukturen

Country Status (7)

Country Link
US (5) US6372618B2 (de)
JP (2) JP2003519911A (de)
KR (1) KR100484372B1 (de)
AU (1) AU2637801A (de)
DE (1) DE10194791B4 (de)
GB (1) GB2373925B (de)
WO (1) WO2001050507A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739066A (en) 1996-09-17 1998-04-14 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US6143611A (en) * 1998-07-30 2000-11-07 Micron Technology, Inc. Semiconductor processing methods, methods of forming electronic components, and transistors
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
JP2001332630A (ja) * 2000-05-19 2001-11-30 Sharp Corp 半導体装置の製造方法
JP2002141514A (ja) * 2000-11-07 2002-05-17 Sanyo Electric Co Ltd ボトムゲート型薄膜トランジスタ及びその製造方法
US6927435B2 (en) * 2001-01-16 2005-08-09 Renesas Technology Corp. Semiconductor device and its production process
US7358171B2 (en) * 2001-08-30 2008-04-15 Micron Technology, Inc. Method to chemically remove metal impurities from polycide gate sidewalls
JP2003174101A (ja) * 2001-12-04 2003-06-20 Toshiba Corp 半導体装置および半導体装置の製造方法
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US20040061190A1 (en) * 2002-09-30 2004-04-01 International Business Machines Corporation Method and structure for tungsten gate metal surface treatment while preventing oxidation
US6686637B1 (en) * 2002-11-21 2004-02-03 International Business Machines Corporation Gate structure with independently tailored vertical doping profile
KR100958618B1 (ko) * 2002-12-31 2010-05-20 동부일렉트로닉스 주식회사 반도체 장치의 제조 방법
US7012024B2 (en) * 2003-08-15 2006-03-14 Micron Technology, Inc. Methods of forming a transistor with an integrated metal silicide gate electrode
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US20060079075A1 (en) * 2004-08-12 2006-04-13 Lee Chang-Won Gate structures with silicide sidewall barriers and methods of manufacturing the same
KR100629646B1 (ko) 2004-08-12 2006-09-29 삼성전자주식회사 게이트 구조물 및 그 제조방법
JP4938262B2 (ja) * 2004-08-25 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7521316B2 (en) * 2004-09-09 2009-04-21 Samsung Electronics Co., Ltd. Methods of forming gate structures for semiconductor devices
US20090267157A1 (en) * 2004-12-06 2009-10-29 Koninklijke Philips Electronics N.V. Method or manufacturing a semiconductor device and semiconductor device obtained by using such a method
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7390756B2 (en) 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7510983B2 (en) * 2005-06-14 2009-03-31 Micron Technology, Inc. Iridium/zirconium oxide structure
TWI293187B (en) * 2005-06-15 2008-02-01 Promos Technologies Inc Gate structure and method for preparing the same
US7442319B2 (en) * 2005-06-28 2008-10-28 Micron Technology, Inc. Poly etch without separate oxide decap
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
KR101082096B1 (ko) * 2008-01-21 2011-11-10 주식회사 하이닉스반도체 샐리사이드 공정을 이용한 반도체 소자의 제조방법
US7816218B2 (en) * 2008-08-14 2010-10-19 Intel Corporation Selective deposition of amorphous silicon films on metal gates
DE102008049723B4 (de) * 2008-09-30 2012-01-26 Advanced Micro Devices, Inc. Transistor mit eingebettetem Si/Ge-Material mit einer besseren substratüberspannenden Gleichmäßigkeit
KR101087139B1 (ko) 2008-12-18 2011-11-25 한국전자통신연구원 수퍼 접합 구조를 갖는 ｔｄｍｏｓ 소자의 제조 방법
KR101697594B1 (ko) * 2010-03-03 2017-01-18 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
US8741704B2 (en) 2012-03-08 2014-06-03 International Business Machines Corporation Metal oxide semiconductor (MOS) device with locally thickened gate oxide
US9673058B1 (en) * 2016-03-14 2017-06-06 Lam Research Corporation Method for etching features in dielectric layers
KR20240091284A (ko) * 2021-12-02 2024-06-21 와커 헤미 아게 규소-함유 물질을 생산하는 방법

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372904A1 (fr) 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
US4285761A (en) * 1980-06-30 1981-08-25 International Business Machines Corporation Process for selectively forming refractory metal silicide layers on semiconductor devices
US4716131A (en) 1983-11-28 1987-12-29 Nec Corporation Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film
JPS63316476A (ja) 1987-06-18 1988-12-23 Seiko Instr & Electronics Ltd 半導体装置およびその製造方法
JP2624736B2 (ja) * 1988-01-14 1997-06-25 株式会社東芝 半導体装置の製造方法
JPH021171A (ja) * 1988-01-21 1990-01-05 Seiko Epson Corp Ｍｉｓ型半導体集積回路装置
KR930006140B1 (ko) 1988-01-21 1993-07-07 세이꼬 엡슨 가부시끼가이샤 Mis형 반도체 집적회로장치
FR2648622B1 (fr) * 1989-06-14 1991-08-30 Commissariat Energie Atomique Procede de fabrication d'un circuit integre comportant un transistor a effet de champ a double implantation
US5160987A (en) 1989-10-26 1992-11-03 International Business Machines Corporation Three-dimensional semiconductor structures formed from planar layers
JPH03283565A (ja) * 1990-03-30 1991-12-13 Toshiba Corp Ｍｏｓ型半導体集積回路装置
KR940001402B1 (ko) * 1991-04-10 1994-02-21 삼성전자 주식회사 골드구조를 가지는 반도체소자의 제조방법
US5376455A (en) * 1993-10-05 1994-12-27 Guardian Industries Corp. Heat-treatment convertible coated glass and method of converting same
DE4342166C2 (de) 1993-12-10 1995-10-26 Bosch Gmbh Robert Integrierte Halbleitervorrichtung mit einem Thyristor
KR950019922A (ko) 1993-12-28 1995-07-24 김주용 다결정실리콘 습식식각용액
JP3281158B2 (ja) * 1993-12-28 2002-05-13 株式会社東芝 半導体装置の製造方法
KR0179677B1 (ko) * 1993-12-28 1999-04-15 사토 후미오 반도체장치 및 그 제조방법
US5736455A (en) 1995-12-22 1998-04-07 Micron Technology, Inc. Method for passivating the sidewalls of a tungsten word line
US5804499A (en) 1996-05-03 1998-09-08 Siemens Aktiengesellschaft Prevention of abnormal WSix oxidation by in-situ amorphous silicon deposition
US5739066A (en) * 1996-09-17 1998-04-14 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US5872057A (en) 1996-11-22 1999-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming oxide dielectric layer on refractory metal silicide gate
JPH10173179A (ja) * 1996-12-11 1998-06-26 Toshiba Corp 半導体装置及び半導体装置の製造方法
US5796151A (en) 1996-12-19 1998-08-18 Texas Instruments Incorporated Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes
KR100230814B1 (ko) 1997-03-05 1999-11-15 김영환 플래시 메모리 소자 및 그 제조방법
US5925918A (en) 1997-07-30 1999-07-20 Micron, Technology, Inc. Gate stack with improved sidewall integrity
US6204521B1 (en) * 1998-08-28 2001-03-20 Micron Technology, Inc. Thin film transistors
JP3988342B2 (ja) * 1998-12-29 2007-10-10 株式会社ハイニックスセミコンダクター 半導体素子のゲート電極形成方法
JP2001036072A (ja) * 1999-07-16 2001-02-09 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
US6429108B1 (en) * 1999-09-02 2002-08-06 Advanced Micro Devices, Inc. Non-volatile memory device with encapsulated tungsten gate and method of making same
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures

Also Published As

Publication number Publication date
GB2373925B (en) 2004-09-08
GB2373925A (en) 2002-10-02
US6372618B2 (en) 2002-04-16
US20050205900A1 (en) 2005-09-22
JP2007088486A (ja) 2007-04-05
US20030157793A1 (en) 2003-08-21
KR100484372B1 (ko) 2005-04-22
AU2637801A (en) 2001-07-16
US20080258245A1 (en) 2008-10-23
WO2001050507A1 (en) 2001-07-12
US7405455B2 (en) 2008-07-29
US6541362B2 (en) 2003-04-01
DE10194791B4 (de) 2005-08-18
JP2003519911A (ja) 2003-06-24
US6890843B2 (en) 2005-05-10
US20020098690A1 (en) 2002-07-25
US20020019120A1 (en) 2002-02-14
GB0213397D0 (en) 2002-07-24
KR20020064984A (ko) 2002-08-10
JP4605399B2 (ja) 2011-01-05

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