AUPP055497A0 - High rate deposition of amorphous silicon films - Google Patents

High rate deposition of amorphous silicon films

Info

Publication number
AUPP055497A0
AUPP055497A0 AUPP0554A AUPP055497A AUPP055497A0 AU PP055497 A0 AUPP055497 A0 AU PP055497A0 AU PP0554 A AUPP0554 A AU PP0554A AU PP055497 A AUPP055497 A AU PP055497A AU PP055497 A0 AUPP055497 A0 AU PP055497A0
Authority
AU
Australia
Prior art keywords
amorphous silicon
high rate
silicon films
rate deposition
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPP0554A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pacific Solar Pty Ltd
Original Assignee
Pacific Solar Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pacific Solar Pty Ltd filed Critical Pacific Solar Pty Ltd
Priority to AUPP0554A priority Critical patent/AUPP055497A0/en
Publication of AUPP055497A0 publication Critical patent/AUPP055497A0/en
Priority to PCT/AU1998/000974 priority patent/WO1999028528A1/en
Priority to AU13274/99A priority patent/AU1327499A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
AUPP0554A 1997-11-26 1997-11-26 High rate deposition of amorphous silicon films Abandoned AUPP055497A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AUPP0554A AUPP055497A0 (en) 1997-11-26 1997-11-26 High rate deposition of amorphous silicon films
PCT/AU1998/000974 WO1999028528A1 (en) 1997-11-26 1998-11-24 High rate deposition of amorphous silicon films
AU13274/99A AU1327499A (en) 1997-11-26 1998-11-24 High rate deposition of amorphous silicon films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPP0554A AUPP055497A0 (en) 1997-11-26 1997-11-26 High rate deposition of amorphous silicon films

Publications (1)

Publication Number Publication Date
AUPP055497A0 true AUPP055497A0 (en) 1997-12-18

Family

ID=3804834

Family Applications (1)

Application Number Title Priority Date Filing Date
AUPP0554A Abandoned AUPP055497A0 (en) 1997-11-26 1997-11-26 High rate deposition of amorphous silicon films

Country Status (2)

Country Link
AU (1) AUPP055497A0 (en)
WO (1) WO1999028528A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436488B1 (en) * 2000-06-12 2002-08-20 Agilent Technologies, Inc. Chemical vapor deposition method for amorphous silicon and resulting film
AU2003226956A1 (en) * 2002-04-25 2003-11-10 Nkt Research And Innovation A/S Method and apparatus for plasma deposition of chemically reactive groups on substrates chemically reactive substrates obtainable by the method and use thereof
HUP1100437A2 (en) * 2011-08-15 2013-02-28 Ecosolifer Ag Reaction chamber for producing semiconducting thin film formation on one
KR101512140B1 (en) * 2013-11-15 2015-04-16 코닉이앤씨 주식회사 Atomic layer deposition apparatus and method thereof
CN109778148A (en) * 2019-03-01 2019-05-21 晋能光伏技术有限责任公司 It is a kind of for producing the PECVD device of heterojunction solar battery plated film
CN110923673B (en) * 2019-11-05 2022-05-13 郑州师范学院 Magnetic field enhanced flat plasma chemical vapor deposition equipment and system
CN112630288B (en) * 2020-11-17 2021-10-12 燕山大学 Secondary electron emission coefficient measuring device and method based on discharge
CN113755816B (en) * 2021-09-09 2023-12-19 理想万里晖真空装备(泰兴)有限公司 Pre-coating method for improving dust in reaction cavity and pre-coating film formed by same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
JPS5710920A (en) * 1980-06-23 1982-01-20 Canon Inc Film forming process
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
JPS59232909A (en) * 1983-05-16 1984-12-27 Oki Electric Ind Co Ltd Manufacture of thin amorphous silicon film
US4792460A (en) * 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
CH668145A5 (en) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive PROCESS AND INSTALLATION FOR DEPOSITION OF HYDROGEN AMORPHOUS SILICON ON A SUBSTRATE IN A PLASMA ENCLOSURE.
DE3742110C2 (en) * 1986-12-12 1996-02-22 Canon Kk Process for forming functional evaporated films by a chemical microwave plasma evaporation process
US5133986A (en) * 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
JP3146112B2 (en) * 1993-12-24 2001-03-12 シャープ株式会社 Plasma CVD equipment

Also Published As

Publication number Publication date
WO1999028528A1 (en) 1999-06-10

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