DE69633367D1 - Verfahren zur Herstellung eines in einer Halbleitervorrichtung integrierten Kondensators - Google Patents

Verfahren zur Herstellung eines in einer Halbleitervorrichtung integrierten Kondensators

Info

Publication number
DE69633367D1
DE69633367D1 DE69633367T DE69633367T DE69633367D1 DE 69633367 D1 DE69633367 D1 DE 69633367D1 DE 69633367 T DE69633367 T DE 69633367T DE 69633367 T DE69633367 T DE 69633367T DE 69633367 D1 DE69633367 D1 DE 69633367D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
capacitor integrated
capacitor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633367T
Other languages
English (en)
Other versions
DE69633367T2 (de
Inventor
Akihiro Matsuda
Koji Arita
Yoshihisa Nagano
Yasuhiro Uemoto
Toru Nasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69633367D1 publication Critical patent/DE69633367D1/de
Publication of DE69633367T2 publication Critical patent/DE69633367T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69633367T 1995-07-14 1996-07-10 Verfahren zur Herstellung eines in einer Halbleitervorrichtung integrierten Kondensators Expired - Lifetime DE69633367T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17852495 1995-07-14
JP7178524A JP3012785B2 (ja) 1995-07-14 1995-07-14 容量素子

Publications (2)

Publication Number Publication Date
DE69633367D1 true DE69633367D1 (de) 2004-10-21
DE69633367T2 DE69633367T2 (de) 2005-09-22

Family

ID=16049986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633367T Expired - Lifetime DE69633367T2 (de) 1995-07-14 1996-07-10 Verfahren zur Herstellung eines in einer Halbleitervorrichtung integrierten Kondensators

Country Status (6)

Country Link
US (1) US6143597A (de)
EP (1) EP0753887B1 (de)
JP (1) JP3012785B2 (de)
KR (1) KR100268643B1 (de)
CN (1) CN1159759C (de)
DE (1) DE69633367T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6777248B1 (en) * 1997-11-10 2004-08-17 Hitachi, Ltd. Dielectric element and manufacturing method therefor
KR100275120B1 (ko) * 1997-12-30 2001-01-15 김영환 캐패시터의강유전체박막형성방법
KR100269320B1 (ko) * 1997-12-30 2000-10-16 윤종용 유전체막의형성방법및이를이용한캐패시터의제조방법
KR100275121B1 (ko) 1997-12-30 2001-01-15 김영환 강유전체 캐패시터 제조방법
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
TW404021B (en) * 1998-04-09 2000-09-01 Hitachi Ltd Semiconductor memory device and manufacturing method thereof
US6156638A (en) 1998-04-10 2000-12-05 Micron Technology, Inc. Integrated circuitry and method of restricting diffusion from one material to another
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6232174B1 (en) 1998-04-22 2001-05-15 Sharp Kabushiki Kaisha Methods for fabricating a semiconductor memory device including flattening of a capacitor dielectric film
KR100324589B1 (ko) * 1998-12-24 2002-04-17 박종섭 반도체 소자의 강유전체 캐패시터 제조방법
DE19940381A1 (de) * 1999-08-25 2001-04-05 Infineon Technologies Ag Ferroelektrischer Transistor und Verfahren zu dessen Herstellung
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
KR100353809B1 (ko) * 1999-12-28 2002-09-26 주식회사 하이닉스반도체 강유전체 캐패시터의 제조 방법
DE10009146A1 (de) * 2000-02-22 2001-09-06 Infineon Technologies Ag Herstellungsverfahren sehr dünner ferroelektrischer Schichten
US7005695B1 (en) 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
JP2002170938A (ja) * 2000-04-28 2002-06-14 Sharp Corp 半導体装置およびその製造方法
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6831313B2 (en) * 2001-05-10 2004-12-14 Symetrix Corporation Ferroelectric composite material, method of making same and memory utilizing same
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US7011978B2 (en) * 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US6534326B1 (en) * 2002-03-13 2003-03-18 Sharp Laboratories Of America, Inc. Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
JP3986859B2 (ja) 2002-03-25 2007-10-03 富士通株式会社 薄膜キャパシタ及びその製造方法
US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
DE10330535A1 (de) * 2003-07-07 2005-02-03 Forschungszentrum Jülich GmbH Ferroelektrische Schicht mit angebrachter Elektrode und rauher Grenzschicht
KR100585114B1 (ko) * 2003-12-05 2006-05-30 삼성전자주식회사 비티에스 또는 비티지 물질로 이루어진 고유전체막을구비하는 반도체 소자의 커패시터 및 그 제조방법
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
JP4912081B2 (ja) * 2005-08-24 2012-04-04 イビデン株式会社 ＡＢＯｘ型ペロブスカイト結晶構造を有する誘電体膜の形成方法
JP4524698B2 (ja) * 2006-10-26 2010-08-18 エルピーダメモリ株式会社 容量素子を有する半導体装置及びその製造方法
WO2010088684A2 (en) * 2009-02-02 2010-08-05 Space Charge, LLC Capacitor using carbon-based extensions
US8946899B2 (en) * 2012-07-24 2015-02-03 Invensas Corporation Via in substrate with deposited layer
CN116936703A (zh) 2016-06-24 2023-10-24 克罗米斯有限公司 多晶陶瓷衬底及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027209A (en) * 1975-10-02 1977-05-31 Sprague Electric Company Ceramic capacitor having a silver doped dielectric of (Pb,La)(Zr,Ti)O3
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
DE69205063T2 (de) * 1991-05-16 1996-02-29 Nec Corp Dünnschichtkondensator.
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5218512A (en) * 1991-08-16 1993-06-08 Rohm Co., Ltd. Ferroelectric device
JPH05343345A (ja) * 1992-06-11 1993-12-24 Seiko Epson Corp 強誘電体素子の製造方法
JPH05347391A (ja) * 1992-06-16 1993-12-27 Seiko Epson Corp 強誘電体記憶装置
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JP3033067B2 (ja) * 1992-10-05 2000-04-17 富士ゼロックス株式会社 多層強誘電体導膜の製造方法
JP3113141B2 (ja) * 1993-12-28 2000-11-27 シャープ株式会社 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス
US5635741A (en) * 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
EP0810666B1 (de) * 1996-05-30 2004-08-25 Oki Electric Industry Co., Ltd. Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren
US5736759A (en) * 1996-07-24 1998-04-07 Nec Research Institute, Inc. Reduced fatigue ferroelectric element

Also Published As

Publication number Publication date
JPH0936309A (ja) 1997-02-07
DE69633367T2 (de) 2005-09-22
EP0753887A3 (de) 1997-03-05
EP0753887A2 (de) 1997-01-15
CN1159759C (zh) 2004-07-28
KR100268643B1 (ko) 2000-10-16
CN1147149A (zh) 1997-04-09
EP0753887B1 (de) 2004-09-15
US6143597A (en) 2000-11-07
JP3012785B2 (ja) 2000-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP