DE69324524T2 - Verfahren zur Herstellung eines Halbleiter-Speicherbauteils - Google Patents
Verfahren zur Herstellung eines Halbleiter-SpeicherbauteilsInfo
- Publication number
- DE69324524T2 DE69324524T2 DE69324524T DE69324524T DE69324524T2 DE 69324524 T2 DE69324524 T2 DE 69324524T2 DE 69324524 T DE69324524 T DE 69324524T DE 69324524 T DE69324524 T DE 69324524T DE 69324524 T2 DE69324524 T2 DE 69324524T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17917492A JP3230696B2 (ja) | 1992-06-12 | 1992-06-12 | 半導体記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69324524D1 DE69324524D1 (de) | 1999-05-27 |
DE69324524T2 true DE69324524T2 (de) | 1999-10-28 |
Family
ID=16061235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69324524T Expired - Fee Related DE69324524T2 (de) | 1992-06-12 | 1993-06-09 | Verfahren zur Herstellung eines Halbleiter-Speicherbauteils |
Country Status (5)
Country | Link |
---|---|
US (1) | US5332687A (de) |
EP (1) | EP0573996B1 (de) |
JP (1) | JP3230696B2 (de) |
KR (1) | KR100286109B1 (de) |
DE (1) | DE69324524T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0121297B1 (en) * | 1992-04-16 | 1997-11-15 | Fujitsu Ltd | Semiconductor device and process of producing the same |
US5946591A (en) * | 1994-11-07 | 1999-08-31 | Texas Instruments Incorporated | Method of making a semiconductor device having a flat surface |
US5872060A (en) * | 1995-11-02 | 1999-02-16 | Texas Instruments Incorporated | Semiconductor device manufacturing method |
US5786249A (en) * | 1996-03-07 | 1998-07-28 | Micron Technology, Inc. | Method of forming dram circuitry on a semiconductor substrate |
KR19980060632A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
US5930618A (en) * | 1997-08-04 | 1999-07-27 | United Microelectronics Corp. | Method of Making High-K Dielectrics for embedded DRAMS |
JPH11345946A (ja) | 1998-06-01 | 1999-12-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6110818A (en) * | 1998-07-15 | 2000-08-29 | Philips Electronics North America Corp. | Semiconductor device with gate electrodes for sub-micron applications and fabrication thereof |
US6208004B1 (en) | 1998-08-19 | 2001-03-27 | Philips Semiconductor, Inc. | Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof |
KR20010057669A (ko) | 1999-12-23 | 2001-07-05 | 한신혁 | 적층형 캐패시터를 갖는 반도체 장치의 제조 방법 |
US7838427B2 (en) * | 2006-01-13 | 2010-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for planarization |
EP2250526A4 (de) * | 2008-01-14 | 2013-08-21 | Focal Point Energy Inc | Sonnenkollektor mit gespannter membran und fassungsrand |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4642162A (en) * | 1986-01-02 | 1987-02-10 | Honeywell Inc. | Planarization of dielectric layers in integrated circuits |
US4836885A (en) * | 1988-05-03 | 1989-06-06 | International Business Machines Corporation | Planarization process for wide trench isolation |
JP2671466B2 (ja) * | 1988-12-15 | 1997-10-29 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2768758B2 (ja) * | 1989-10-04 | 1998-06-25 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US5030585A (en) * | 1990-03-22 | 1991-07-09 | Micron Technology, Inc. | Split-polysilicon CMOS DRAM process incorporating selective self-aligned silicidation of conductive regions and nitride blanket protection of N-channel regions during P-channel gate spacer formation |
JP2519569B2 (ja) * | 1990-04-27 | 1996-07-31 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JP2524862B2 (ja) * | 1990-05-01 | 1996-08-14 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
US5240872A (en) * | 1990-05-02 | 1993-08-31 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions |
US5077234A (en) * | 1990-06-29 | 1991-12-31 | Digital Equipment Corporation | Planarization process utilizing three resist layers |
JPH0482263A (ja) * | 1990-07-25 | 1992-03-16 | Sharp Corp | 半導体記憶装置 |
-
1992
- 1992-06-12 JP JP17917492A patent/JP3230696B2/ja not_active Expired - Fee Related
-
1993
- 1993-06-08 KR KR1019930010290A patent/KR100286109B1/ko not_active IP Right Cessation
- 1993-06-09 EP EP93109315A patent/EP0573996B1/de not_active Expired - Lifetime
- 1993-06-09 US US08/073,523 patent/US5332687A/en not_active Expired - Fee Related
- 1993-06-09 DE DE69324524T patent/DE69324524T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05347389A (ja) | 1993-12-27 |
DE69324524D1 (de) | 1999-05-27 |
EP0573996B1 (de) | 1999-04-21 |
KR100286109B1 (ko) | 2001-04-16 |
KR940001421A (ko) | 1994-01-11 |
EP0573996A1 (de) | 1993-12-15 |
JP3230696B2 (ja) | 2001-11-19 |
US5332687A (en) | 1994-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |