DE69205063T2 - Dünnschichtkondensator. - Google Patents

Dünnschichtkondensator.

Info

Publication number
DE69205063T2
DE69205063T2 DE69205063T DE69205063T DE69205063T2 DE 69205063 T2 DE69205063 T2 DE 69205063T2 DE 69205063 T DE69205063 T DE 69205063T DE 69205063 T DE69205063 T DE 69205063T DE 69205063 T2 DE69205063 T2 DE 69205063T2
Authority
DE
Germany
Prior art keywords
thin film
film capacitor
capacitor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205063T
Other languages
English (en)
Other versions
DE69205063D1 (de
Inventor
Toshiyuki Sakuma
Shintaro Yamamichi
Shogo Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3139506A external-priority patent/JPH0746669B2/ja
Priority claimed from JP3162347A external-priority patent/JPH0746670B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69205063D1 publication Critical patent/DE69205063D1/de
Publication of DE69205063T2 publication Critical patent/DE69205063T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
DE69205063T 1991-05-16 1992-05-13 Dünnschichtkondensator. Expired - Fee Related DE69205063T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3139506A JPH0746669B2 (ja) 1991-05-16 1991-05-16 薄膜キャパシタ
JP3162347A JPH0746670B2 (ja) 1991-06-07 1991-06-07 薄膜キャパシタ

Publications (2)

Publication Number Publication Date
DE69205063D1 DE69205063D1 (de) 1995-11-02
DE69205063T2 true DE69205063T2 (de) 1996-02-29

Family

ID=26472299

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205063T Expired - Fee Related DE69205063T2 (de) 1991-05-16 1992-05-13 Dünnschichtkondensator.

Country Status (3)

Country Link
US (1) US5262920A (de)
EP (1) EP0514149B1 (de)
DE (1) DE69205063T2 (de)

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KR100325967B1 (ko) * 1992-04-20 2002-06-20 윌리엄 비. 켐플러 유전체 물질에의 전기 접속부
US5610796A (en) * 1993-02-19 1997-03-11 Electronic Concepts, Inc. Metallized capacitor having increased dielectric breakdown voltage and method for making the same
US5608600A (en) * 1993-02-19 1997-03-04 Electronic Concepts Inc. Metallized film capacitor with increased dielectric breakdown voltage
DE69431971T2 (de) * 1993-03-25 2003-11-27 Matsushita Electric Ind Co Ltd Dünnschichtkondensator und Herstellungsverfahren
JP3159561B2 (ja) * 1993-03-29 2001-04-23 ローム株式会社 結晶性薄膜用電極
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
EP0618597B1 (de) 1993-03-31 1997-07-16 Texas Instruments Incorporated Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5645976A (en) * 1993-10-14 1997-07-08 Matsushita Electronics Corporation Capacitor apparatus and method of manufacture of same
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
US5793600A (en) * 1994-05-16 1998-08-11 Texas Instruments Incorporated Method for forming high dielectric capacitor electrode structure and semiconductor memory devices
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US5625233A (en) * 1995-01-13 1997-04-29 Ibm Corporation Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
JP3368350B2 (ja) * 1995-03-15 2003-01-20 オムロン株式会社 薄膜コンデンサおよびその製造方法並びに混成回路基板およびその実装方法
US5668040A (en) * 1995-03-20 1997-09-16 Lg Semicon Co., Ltd. Method for forming a semiconductor device electrode which also serves as a diffusion barrier
KR100416733B1 (ko) * 1995-03-20 2004-07-05 삼성전자주식회사 강유전성캐패시터
US5550705A (en) * 1995-05-15 1996-08-27 Moncrieff; J. Peter Electrical terminal connection employing plural materials
JP3929513B2 (ja) 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
JPH0936308A (ja) * 1995-07-14 1997-02-07 Matsushita Electron Corp 半導体装置の製造方法
JP3012785B2 (ja) * 1995-07-14 2000-02-28 松下電子工業株式会社 容量素子
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
US5798903A (en) * 1995-12-26 1998-08-25 Bell Communications Research, Inc. Electrode structure for ferroelectric capacitor integrated on silicon
JP3435966B2 (ja) * 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
DE19640218C2 (de) * 1996-09-30 2000-11-02 Siemens Ag Integrierte Halbleiterspeicheranordnung mit Speicherkondensatoren
US5742471A (en) * 1996-11-25 1998-04-21 The Regents Of The University Of California Nanostructure multilayer dielectric materials for capacitors and insulators
US5989402A (en) * 1997-08-29 1999-11-23 Caliper Technologies Corp. Controller/detector interfaces for microfluidic systems
US6462931B1 (en) * 1997-10-23 2002-10-08 Texas Instruments Incorporated High-dielectric constant capacitor and memory
US6284654B1 (en) * 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
KR100363084B1 (ko) * 1999-10-19 2002-11-30 삼성전자 주식회사 박막 구조를 위한 다중막을 포함하는 커패시터 및 그 제조 방법
JP3446713B2 (ja) * 2000-03-14 2003-09-16 株式会社村田製作所 リード端子付きセラミック電子部品
US6890629B2 (en) * 2001-09-21 2005-05-10 Michael D. Casper Integrated thin film capacitor/inductor/interconnect system and method
US7327582B2 (en) * 2000-09-21 2008-02-05 Ultrasource, Inc. Integrated thin film capacitor/inductor/interconnect system and method
WO2002025709A2 (en) 2000-09-21 2002-03-28 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
US6707115B2 (en) 2001-04-16 2004-03-16 Airip Corporation Transistor with minimal hot electron injection
US7082026B2 (en) * 2001-10-09 2006-07-25 Schmidt Dominik J On chip capacitor
DE10120517B4 (de) * 2001-04-26 2013-06-06 Epcos Ag Elektrischer Vielschicht-Kaltleiter und Verfahren zu dessen Herstellung
WO2002091408A1 (de) 2001-05-08 2002-11-14 Epcos Ag Keramisches vielschichtbauelement und verfahren zur herstellung
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US6998696B2 (en) * 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
US7524552B2 (en) * 2002-10-30 2009-04-28 Mitsui Mining And Smelting Co., Ltd. Copper foil provided with dielectric layer for forming capacitor layer, copper clad laminate for formation of capacitor layer using such copper foil with dielectric layer, and method for manufacturing producing such copper foil with dielectric layer for formation of capacitor layer
US7709873B2 (en) * 2005-03-31 2010-05-04 Intel Corporation Polymer memory with adhesion layer containing an immobilized metal
JP2007227874A (ja) * 2006-01-30 2007-09-06 Fujitsu Ltd 薄膜キャパシタ及びその製造方法
US8344438B2 (en) * 2008-01-31 2013-01-01 Qimonda Ag Electrode of an integrated circuit
KR20090115826A (ko) * 2008-05-04 2009-11-09 송준오 그룹 3족 질화물계 반도체 소자용 버퍼층 및 그 제조 방법
US8088658B2 (en) * 2009-04-28 2012-01-03 E. I. Du Pont De Nemours And Company Thin film capacitor and method of fabrication thereof
CN101996767B (zh) * 2009-08-10 2013-03-13 小岛压力加工工业株式会社 薄膜电容器及其制造方法
US20110097589A1 (en) * 2009-10-28 2011-04-28 General Electric Company Article for high temperature service
US8410535B2 (en) * 2011-04-25 2013-04-02 Nanya Technology Corporation Capacitor and manufacturing method thereof
CN103928233B (zh) * 2014-03-18 2016-06-29 天津大学 具有稳定电极结构的薄膜电容器及其制备方法
JP6750462B2 (ja) * 2016-11-04 2020-09-02 Tdk株式会社 薄膜コンデンサ及び電子部品内蔵基板
JP7056290B2 (ja) * 2018-03-23 2022-04-19 Tdk株式会社 薄膜キャパシタ、及び薄膜キャパシタの製造方法
CN108962597B (zh) * 2018-07-18 2020-12-18 清华大学 一种高温高性能电容器薄膜连续生产装置及方法
US20230008075A1 (en) * 2021-07-08 2023-01-12 Taiwan Semiconductor Manufacturing Company Ltd. Capacitor structure and manufacturing method and operating method thereof

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Publication number Priority date Publication date Assignee Title
US3851228A (en) * 1972-04-20 1974-11-26 Du Pont Capacitor with copper oxide containing electrode
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
EP0175988A2 (de) * 1984-09-24 1986-04-02 Allied Corporation Verfahren zur Herstellung von Kondensatoren und nach diesem Verfahren hergestellte Kondensatoren
US4631633A (en) * 1985-12-23 1986-12-23 North American Philips Corporation Thin film capacitors and method of making the same
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
JPH0624222B2 (ja) * 1989-08-23 1994-03-30 日本電気株式会社 薄膜コンデンサの製造方法
DE69017802T2 (de) * 1989-08-30 1995-09-07 Nec Corp Dünnfilmkondensator und dessen Herstellungsverfahren.
JPH0687491B2 (ja) * 1989-09-14 1994-11-02 日本電気株式会社 薄膜コンデンサ
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.

Also Published As

Publication number Publication date
EP0514149B1 (de) 1995-09-27
DE69205063D1 (de) 1995-11-02
US5262920A (en) 1993-11-16
EP0514149A1 (de) 1992-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee