JP6750462B2 - 薄膜コンデンサ及び電子部品内蔵基板 - Google Patents
薄膜コンデンサ及び電子部品内蔵基板 Download PDFInfo
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- JP6750462B2 JP6750462B2 JP2016216476A JP2016216476A JP6750462B2 JP 6750462 B2 JP6750462 B2 JP 6750462B2 JP 2016216476 A JP2016216476 A JP 2016216476A JP 2016216476 A JP2016216476 A JP 2016216476A JP 6750462 B2 JP6750462 B2 JP 6750462B2
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- 239000003990 capacitor Substances 0.000 title claims description 132
- 239000010409 thin film Substances 0.000 title claims description 129
- 239000000758 substrate Substances 0.000 title description 59
- 239000000463 material Substances 0.000 claims description 82
- 238000002844 melting Methods 0.000 claims description 52
- 230000008018 melting Effects 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010948 rhodium Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 517
- 239000004020 conductor Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000014509 gene expression Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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Description
T1>T2…(1)
T3>T2…(2)
L2>L3…(3)
L1>L3…(4)
・グループ1:第1電極層21側に正電荷が蓄積され、第2電極層22側に負電荷が蓄積されるように電圧を印加する。
・グループ2:第1電極層21側に負電荷が蓄積され、第2電極層22側に正電荷が蓄積されるように電圧を印加する。
T1>T2…(5)
T3>T2…(6)
T1>T4…(7)
L2>L3…(8)
L1>L3…(9)
L2≧L4…(10)
Claims (7)
- 正電荷を蓄積する第1電極層及び負電荷を蓄積する第2電極層による一対の電極層と、
積層方向に沿って当該一対の電極層に挟まれた誘電体層と、
を有し、
前記第1電極層は、前記誘電体層と接する第1主電極層を含み、
前記第2電極層は、互いに異なる金属材料により形成された第2主電極層と第2副電極層とを含み、
前記第2副電極層は、積層方向に沿って前記誘電体層と前記第2主電極層とにより挟まれるように配置され、
前記第2主電極層の材料の融点は、前記第1主電極層の材料の融点及び前記第2副電極層の材料の融点のいずれよりも低い薄膜コンデンサ。 - 前記第1電極層は、前記第1主電極層とは異なる金属材料により形成された第1副電極層を含み、
前記第1副電極層は、積層方向に沿って前記誘電体層とは逆側で前記第1主電極層と接するように配置され、
前記第1主電極層の材料の融点は、前記第1副電極層の材料の融点よりも高い請求項1に記載の薄膜コンデンサ。 - 積層方向に沿って見たときの前記薄膜コンデンサにおける両端の層の材料は、主成分が銅である請求項2に記載の薄膜コンデンサ。
- 積層方向に沿って見たときの前記薄膜コンデンサにおける両端の層と、その内側に積層する層との間に、当該内側に積層する層の主成分と銅との合金層を有する請求項3に記載の薄膜コンデンサ。
- 前記第1主電極層及び前記第2副電極層の材料は、主成分が、タンタル、ニッケル、タングステン、白金、パラジウム、イリジウム、ルテニウム、及び、ロジウムのいずれか、又は、これらの金属の合金である請求項1〜4のいずれか一項に記載の薄膜コンデンサ。
- 前記第2副電極層の厚さは、0.05μm〜10μmである請求項1〜5のいずれか一項に記載の薄膜コンデンサ。
- 請求項1〜6のいずれか一項に記載の薄膜コンデンサと、
前記薄膜コンデンサの前記第1電極層及び前記第2電極層のそれぞれに対して電気的に接続する一対のビアと、
を有する電子部品内蔵基板。
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