JP2010529943A5 - - Google Patents

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Publication number
JP2010529943A5
JP2010529943A5 JP2010512426A JP2010512426A JP2010529943A5 JP 2010529943 A5 JP2010529943 A5 JP 2010529943A5 JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010529943 A5 JP2010529943 A5 JP 2010529943A5
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JP
Japan
Prior art keywords
thin film
angle
miscut
nonpolar
miscut angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010512426A
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English (en)
Japanese (ja)
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JP2010529943A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/067149 external-priority patent/WO2008157510A1/en
Publication of JP2010529943A publication Critical patent/JP2010529943A/ja
Publication of JP2010529943A5 publication Critical patent/JP2010529943A5/ja
Pending legal-status Critical Current

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JP2010512426A 2007-06-15 2008-06-16 ミスカット基板上に成長したプレーナ無極性ｍ平面ＩＩＩ族窒化物薄膜 Pending JP2010529943A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94420607P 2007-06-15 2007-06-15
PCT/US2008/067149 WO2008157510A1 (en) 2007-06-15 2008-06-16 Planar nonpolar m-plane group iii nitride films grown on miscut substrates

Publications (2)

Publication Number Publication Date
JP2010529943A JP2010529943A (ja) 2010-09-02
JP2010529943A5 true JP2010529943A5 (enExample) 2012-07-12

Family

ID=40131512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010512426A Pending JP2010529943A (ja) 2007-06-15 2008-06-16 ミスカット基板上に成長したプレーナ無極性ｍ平面ＩＩＩ族窒化物薄膜

Country Status (5)

Country Link
US (5) US8158497B2 (enExample)
JP (1) JP2010529943A (enExample)
KR (1) KR101515058B1 (enExample)
TW (2) TWI469186B (enExample)
WO (1) WO2008157510A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278128B2 (en) 2008-02-01 2012-10-02 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
WO2009021201A1 (en) * 2007-08-08 2009-02-12 The Regents Of The University Of California Planar nonpolar m-plane group iii-nitride films grown on miscut substrates
CN102449737A (zh) * 2009-03-02 2012-05-09 加利福尼亚大学董事会 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
WO2011046203A1 (ja) * 2009-10-16 2011-04-21 日本碍子株式会社 下地基板、３ｂ族窒化物結晶及びその製法
JP5972798B2 (ja) 2010-03-04 2016-08-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｃ方向において＋／−１５度より少ないミスカットを有するｍ面基板上の半極性ｉｉｉ族窒化物光電子デバイス
US20110233521A1 (en) * 2010-03-24 2011-09-29 Cree, Inc. Semiconductor with contoured structure
CN103959437B (zh) 2011-09-30 2017-08-01 圣戈班晶体及检测公司 具有特定结晶特征的iii‑v族衬底材料及其制备方法
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
CN113013302A (zh) * 2021-02-26 2021-06-22 东莞市中麒光电技术有限公司 InGaN基红光LED芯片结构的制备方法
KR20230000950A (ko) 2021-06-25 2023-01-03 삼성전자주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
CN113640328B (zh) * 2021-08-12 2024-01-23 安徽长飞先进半导体有限公司 基于x射线的AlGaN层Al组分测定方法
KR102564956B1 (ko) * 2021-11-25 2023-08-08 재단법인대구경북과학기술원 사파이어 미스컷 기판을 이용한 무자기장 스핀궤도토크 스위칭 소자
CN114899258B (zh) * 2022-04-08 2024-03-12 华南理工大学 非极性AlGaN基深紫外光电探测器外延结构及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845370B2 (en) * 1998-11-12 2005-01-18 Accenture Llp Advanced information gathering for targeted activities
US6489636B1 (en) * 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US7208393B2 (en) * 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
US7504274B2 (en) * 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP2006024897A (ja) * 2004-06-11 2006-01-26 Mitsubishi Chemicals Corp 窒化物半導体基板及びその製造方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4580862B2 (ja) 2005-11-09 2010-11-17 東京製綱株式会社 土木施設用ロープの方向変換装置
JP2008285364A (ja) 2007-05-17 2008-11-27 Sumitomo Electric Ind Ltd ＧａＮ基板、それを用いたエピタキシャル基板及び半導体発光素子

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