JP2010529943A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010529943A5 JP2010529943A5 JP2010512426A JP2010512426A JP2010529943A5 JP 2010529943 A5 JP2010529943 A5 JP 2010529943A5 JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010529943 A5 JP2010529943 A5 JP 2010529943A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- angle
- miscut
- nonpolar
- miscut angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94420607P | 2007-06-15 | 2007-06-15 | |
| PCT/US2008/067149 WO2008157510A1 (en) | 2007-06-15 | 2008-06-16 | Planar nonpolar m-plane group iii nitride films grown on miscut substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010529943A JP2010529943A (ja) | 2010-09-02 |
| JP2010529943A5 true JP2010529943A5 (enExample) | 2012-07-12 |
Family
ID=40131512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010512426A Pending JP2010529943A (ja) | 2007-06-15 | 2008-06-16 | ミスカット基板上に成長したプレーナ無極性m平面III族窒化物薄膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US8158497B2 (enExample) |
| JP (1) | JP2010529943A (enExample) |
| KR (1) | KR101515058B1 (enExample) |
| TW (2) | TWI469186B (enExample) |
| WO (1) | WO2008157510A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090039356A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
| JP2011511462A (ja) | 2008-02-01 | 2011-04-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ウエハの軸外カットによる窒化物発光ダイオードの偏光の向上 |
| JP5739824B2 (ja) * | 2009-03-02 | 2015-06-24 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 非極性または半極性(Ga、Al、In、B)N基板上に成長させられる素子 |
| JP4375497B1 (ja) * | 2009-03-11 | 2009-12-02 | 住友電気工業株式会社 | Iii族窒化物半導体素子、エピタキシャル基板、及びiii族窒化物半導体素子を作製する方法 |
| CN102575384B (zh) * | 2009-10-16 | 2015-10-14 | 日本碍子株式会社 | 基底基板、第13族氮化物结晶及其制法 |
| CN102782966B (zh) | 2010-03-04 | 2017-04-26 | 加利福尼亚大学董事会 | 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置 |
| US20110233521A1 (en) * | 2010-03-24 | 2011-09-29 | Cree, Inc. | Semiconductor with contoured structure |
| KR101978536B1 (ko) | 2011-09-30 | 2019-05-14 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | 특정한 결정학적 특징을 갖는 ⅲ-ⅴ족 기판 물질 및 제조 방법 |
| TWI529964B (zh) | 2012-12-31 | 2016-04-11 | 聖戈班晶體探測器公司 | 具有薄緩衝層的iii-v族基材及其製備方法 |
| CN113013302A (zh) * | 2021-02-26 | 2021-06-22 | 东莞市中麒光电技术有限公司 | InGaN基红光LED芯片结构的制备方法 |
| CN113640328B (zh) * | 2021-08-12 | 2024-01-23 | 安徽长飞先进半导体有限公司 | 基于x射线的AlGaN层Al组分测定方法 |
| KR102564956B1 (ko) * | 2021-11-25 | 2023-08-08 | 재단법인대구경북과학기술원 | 사파이어 미스컷 기판을 이용한 무자기장 스핀궤도토크 스위칭 소자 |
| CN114899258B (zh) * | 2022-04-08 | 2024-03-12 | 华南理工大学 | 非极性AlGaN基深紫外光电探测器外延结构及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6845370B2 (en) * | 1998-11-12 | 2005-01-18 | Accenture Llp | Advanced information gathering for targeted activities |
| US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| US7208393B2 (en) * | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| JP3888374B2 (ja) | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
| US7504274B2 (en) * | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| JP2006024897A (ja) * | 2004-06-11 | 2006-01-26 | Mitsubishi Chemicals Corp | 窒化物半導体基板及びその製造方法 |
| EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
| JP4580862B2 (ja) | 2005-11-09 | 2010-11-17 | 東京製綱株式会社 | 土木施設用ロープの方向変換装置 |
| JP2008285364A (ja) * | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN基板、それを用いたエピタキシャル基板及び半導体発光素子 |
-
2008
- 2008-06-16 JP JP2010512426A patent/JP2010529943A/ja active Pending
- 2008-06-16 TW TW097122460A patent/TWI469186B/zh active
- 2008-06-16 KR KR1020097027548A patent/KR101515058B1/ko active Active
- 2008-06-16 WO PCT/US2008/067149 patent/WO2008157510A1/en not_active Ceased
- 2008-06-16 US US12/140,096 patent/US8158497B2/en active Active
- 2008-06-16 TW TW103138109A patent/TWI604512B/zh active
-
2012
- 2012-03-22 US US13/427,590 patent/US8691671B2/en active Active
-
2014
- 2014-01-27 US US14/164,434 patent/US8791000B2/en active Active
- 2014-06-16 US US14/305,734 patent/US9340899B2/en active Active
-
2016
- 2016-04-20 US US15/134,081 patent/US9828695B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010529943A5 (enExample) | ||
| TWI351717B (en) | Method for forming group-iii nitride semiconductor | |
| CN103415915A (zh) | 使用氨预流在硅基材上使氮化铝形核的方法 | |
| JP2006518104A5 (enExample) | ||
| JP6060348B2 (ja) | 結晶性膜付き単結晶基板の製造方法、及び素子製造方法 | |
| JP2010135845A5 (enExample) | ||
| JP2011063504A5 (enExample) | ||
| JP2008543087A5 (enExample) | ||
| CN105161578B (zh) | Si衬底上GaN薄膜的生长方法及复合GaN薄膜 | |
| JP2011524322A5 (enExample) | ||
| WO2017067333A1 (zh) | 图形化衬底、制备方法及发光二极管 | |
| JP2010536181A5 (enExample) | ||
| CN107863428B (zh) | 一种纳米级图形化衬底及其制作方法 | |
| JP2010529943A (ja) | ミスカット基板上に成長したプレーナ無極性m平面III族窒化物薄膜 | |
| JP2018093113A (ja) | 窒化物半導体テンプレートの製造方法、窒化物半導体テンプレートおよび窒化物半導体デバイス | |
| CN101814427A (zh) | GaN基图形衬底模板的制备方法 | |
| CN112563119A (zh) | 大斜切角异质衬底-氮化镓复合结构及其生长方法 | |
| JP2010539732A5 (enExample) | ||
| CN1451173A (zh) | 在含有非氮化镓柱体的基板上制造氮化镓半导体层,并由此制造氮化镓半导体结构的方法 | |
| CN100580881C (zh) | 氮化物半导体装置及其制造方法 | |
| JP2008290919A5 (enExample) | ||
| CN104576326A (zh) | 一种硅基ⅲ-v族砷化镓半导体材料制备方法和系统 | |
| JP2005011944A (ja) | 発光装置 | |
| CN207116374U (zh) | 一种氮化镓薄膜和石墨烯薄膜 | |
| CN105826438B (zh) | 一种具有金属缓冲层的发光二极管及其制备方法 |