TWI604512B - 非極性三族氮化物膜、使用其製造之裝置及生長其之方法 - Google Patents

非極性三族氮化物膜、使用其製造之裝置及生長其之方法 Download PDF

Info

Publication number
TWI604512B
TWI604512B TW103138109A TW103138109A TWI604512B TW I604512 B TWI604512 B TW I604512B TW 103138109 A TW103138109 A TW 103138109A TW 103138109 A TW103138109 A TW 103138109A TW I604512 B TWI604512 B TW I604512B
Authority
TW
Taiwan
Prior art keywords
film
polar
group iii
iii nitride
substrate
Prior art date
Application number
TW103138109A
Other languages
English (en)
Other versions
TW201515068A (zh
Inventor
平井朝子
賈中元
齊藤真
山田永
磯憲司
史蒂芬Ｐ 丹巴爾斯
秀治 中村
詹姆士Ｓ 史貝克
Original Assignee
美國加利福尼亞大學董事會
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美國加利福尼亞大學董事會 filed Critical 美國加利福尼亞大學董事會
Publication of TW201515068A publication Critical patent/TW201515068A/zh
Application granted granted Critical
Publication of TWI604512B publication Critical patent/TWI604512B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

非極性三族氮化物膜、使用其製造之裝置及生長其之方法
本發明涉及一用於非極性m平面的平面膜的生長之技術，及更特定言之，涉及一用於沒有任何表面波動的極平滑的m-GaN膜之生長的技術。
本申請案根據35 U.S.C.Section 119(e)之規定主張同在申請中及已共同讓與之美國臨時專利申請案第60/994,206號的權利，該案於2007年6月15日由Asako Hirai、Zhongyuan Jia、Makoto Saito、Hisashi Yamada、Kenji Iso、Steven P.DenBaars、Shuji Nakamura及James S.Speck申請，命名為"生長在斜切基板上之平面的非極性m平面群三族氮化物膜"，代理人的檔案號碼是30794.238-US-P1(2007-674)，該案以引用的方式併入本文中。
本申請案與下面的同在申請中及已共同讓與之美國專利申請案是相關的：2007年8月8日由Hisashi Yamada、Kenji Iso及Shuji Nakamura申請之名為"有長波長發射的非極性三族氮化物發光二極體"的美國臨時申請案第60/954,770號，代理人的檔案號碼是30794.247-US-P1(2008-063)；2007年8月8日由Hisashi Yamada、Kenji Iso、Makoto Saito、Asako Hirai、Steven P.DenBaars、James S.Speck及Shuji Nakamura申 請之名為"生長在斜切基板上之三族氮化物膜"的美國臨時申請案第60/954,767號，代理人的檔案號碼是30794.248-US-P1(2008-062)；及2007年8月8日由Kenji Iso、Hisashi Yamada、Makoto Saito、Asako Hirai、Steven P.DenBaars、James S.Speck及Shuji Nakamura申請之名為"生長在斜切基板上之平面的非極性m平面群三族氮化物膜"的美國臨時申請案第60/954,744號，代理人的檔案號碼是30794.249-US-P1(2008-004)；該等案以引用的方式併入本文中。
氮化鎵(GaN)的有效性與它的併入鋁和銦之三元和四元化合物(AlGaN，InGaN，AlInGaN)已經被充分確定為用於可見的和紫外線光電子裝置及高功率電子裝置的製造。在這裏涉及的此等化合物都稱作為三族氮化物、或III-氮化物、或只是氮化物、或用術語(Al，B，Ga，In)N。由這些化合物製成的裝置是通常使用生長技術的磊晶生長，生長技術包括分子束磊晶(MBE)、有機金屬化學汽相沈積(MOCVD)及氫化物汽相磊晶(HVPE)。
GaN和其合金在六角形纖維鋅礦晶體結構中是最穩定的，其中該結構是藉由兩個(或三個)關於彼此(a軸)被旋轉120°的等價基本平面軸而描述，所有的軸都垂直於一唯一的c軸。三族和氮原子順著晶體的c軸占據交替的c平面。被包括在纖維鋅礦結構中的對稱元素表明三族氮化物順著此c軸擁有一整體自發極化，及纖維鋅礦結構展示壓電極化。
當前用於電子和光電子裝置的氮化物技術使用順著極性c方向生長的氮化物膜。然而，由於強的壓電和自發極化的存在，在基於三族氮化物的光電和電子裝置中的習知c平面量子阱結構遭受不希望的量子受限史塔克效應(QCSE)。順著c方向強大的內建電場造成電子和電 洞的空間分離，其反過來引起受限制的載體再結合效率，減少的振子強度，及紅移發射。
消除GaN光電子裝置中自發和壓電極化效應的一種方法是使裝置生長到晶體的非極性平面上。這樣的平面包括相等數量的Ga和N原子且是中性電荷。此外，後續的非極性層與彼此等效，因此塊狀晶體順著生長方向不會被極化。在GaN中兩個這樣的對稱等價非極性平面系列是{11-20}系列，統稱為a平面，及{1-100}系列，統稱為m平面。
極化的另一個原因是壓電極化。壓電極化發生在當材料經歷一個壓縮或拉伸應變時，也可能發生在當不同化合物(及因此不同的晶格常數)之(Al，In，Ga，B)N層生長在一氮化物異質結構中時。例如，在一GaN模板上的一薄AlGaN層可能有平面內拉伸應變，而在一GaN模板上的一薄InGaN層可能有平面內壓縮應變，二者都是由於對GaN的晶格匹配。因此，對在GaN上的一InGaN量子阱，壓電極化將指向相反方向而不是InGaN和GaN的自發極化的方向。對晶格匹配至GaN的一AlGaN層，壓電極化將會指向和AlGaN和GaN的自發極化之方向相同的方向。
在c平面氮化物上使用非極性平面的優點是整個極化將會被減少。對於特定平面上特定的合金成分可能甚至會有零極化。這樣的設想可能會在將來的科技論文裏被詳細討論。最重要的要點是相較於c平面氮化物結構極化，極化可能會被減少。
儘管在非極性m平面GaN上之高性能光電子裝置已經被證實，已知困難的是得到用於m平面非極性GaN的平滑表面。m平面GaN表面是通常被覆蓋有小平面或更正確的是肉眼可見的表面波動。表面波動是有害的，例如，由於它可能會引起量子結構中的小平面，及取決於晶體小平面的合金原子或摻雜物的不均勻合併等等。
本發明描述一用於非極性m平面氮化物之平面膜生長的技術。例 如，使用本發明已證實一沒有任何表面波動的極平滑m-GaN膜。
本發明揭示一種用於生長有極平滑表面、沒有任何肉眼可見到的表面波動之平面非極性三族氮化物膜的方法，為了抑制非極性三族氮化物膜的表面波動，該方法藉由選擇非極性三族氮化物膜於其上生長的一基板的一斜切角。這個斜切角是一個朝向a軸方向的一平面內斜切角，其中斜切角是一朝向a軸方向之0.15°或更大的斜切角及朝向a軸方向小於30°的斜切角。
本發明揭示一生長在一基板斜切上的非極性三族氮化物膜，其中該膜的一頂面是一非極性平面及斜切是針對基板的一晶體平面成一斜切角的基板一表面。
斜切角可以是0.15°或更大。晶體平面可以是一m平面，非極性三族氮化物膜可以是m平面，及斜切角可以是朝向a軸方向且包括一朝向a軸方向之0.15°或更大的斜切角及朝向a軸方向小於30°的斜切角。頂面可以是極平滑的或平面的。斜切角可為使得在長度超過1000微米之頂面上的一個或多個波動的一均方根(RMS)步高是50nm或更少。斜切角可為使得在長度超過1000微米之頂面上的波動的一最大步高是61nm或更少。波動可包括小平面的角錐。
晶體平面可以是一個非極性平面。斜切角可以是充分地小使得膜是非極性的。斜切角可為使得頂面及沉積在頂面上的一個或多層的一個或多個表面都是充分地平滑以用於一量子阱介面或一異質接面介面。
這個膜可以是一基板或模板及頂面適合用於在頂面上裝置品質(Al，B，Ga，In)N層的後續生長。一裝置可使用膜製成。
本發明進一步揭示了一用於生長一三族氮化物的方法，其包括在一基板的斜切上生長一非極性三族氮化物膜，其中為了增加非極性三 族氮化物膜的表面平度，斜切包括關於基板的晶體平面成一斜切角的基板一表面。該方法可進一步包括選擇斜切角的步驟，以抑制非極性三族氮化物膜的表面波動來得到一膜的平滑表面形態。晶體平面可以是一m平面，非極性三族氮化物膜可以是m平面，及斜切角可以是朝向一a軸方向且包括一朝向a軸方向之0.15°或更大的斜切角及朝向a軸方向小於30°的斜切角。一非極性三族氮化物膜可使用此方法製成。
本發明進一步揭示一基於非極性三族氮化物的裝置，其包括一非極性三族氮化物膜，有一平滑表面形態，且生長在一基板的斜切上。
現將論及圖式，其中各處之相同參考數字代表對應的部分。
100‧‧‧GaN膜
102‧‧‧a軸方向
104‧‧‧表面
106a‧‧‧角錐小平面
106b‧‧‧角錐小平面
108‧‧‧GaN膜
110‧‧‧表面
112a‧‧‧角錐小平面
112b‧‧‧角錐小平面
114‧‧‧m平面
116a‧‧‧波動
118b‧‧‧步高
120‧‧‧波動
200a‧‧‧表面波動
200b‧‧‧表面波動
600‧‧‧膜
602a‧‧‧斜切
602b‧‧‧表面
604‧‧‧基板
606‧‧‧頂面
608‧‧‧斜切角
610‧‧‧晶體平面
612‧‧‧a軸方向
614a‧‧‧N化合物層
614b‧‧‧表面
616‧‧‧裝置
圖1(a)和1(b)是一GaN膜的橫截面的示意圖，GaN膜順著a軸方向在一有斜切角的獨立m-GaN基板上。
圖2(a)、2(b)和2(c)是一m平面GaN膜的表面的光學顯微圖，該膜生長在一有不同斜切角的獨立的m-GaN基板上，其中圖2(a)顯示生長在有一斜切角為0.01°之獨立m-GaN基板上的一m平面GaN膜的表面，圖2(b)顯示生長在有一斜切角為0.15°之獨立m-GaN基板上的一m平面GaN膜的表面，圖2(c)顯示生長在有一斜切角為0.30°之獨立m-GaN基板上的一m平面GaN膜的表面。
圖3顯示從生長在有不同斜切角變化的獨立m-GaN基板上的一m平面GaN角錐特徵的步高測量估計的一均方根(RMS)值。
圖4顯示從生長在有不同斜切角變化的獨立m-GaN基板上的一m平面GaN膜的步高測量估計的一最大高度值。
圖5是繪示本發明之一方法的流程圖。
圖6是根據本發明的一裝置的橫截面示意圖。
在下面較佳實施例的描述中，對附圖進行參考，且該等附圖形成 本文之一部分且在其中經由繪示本發明可於其中被實踐的一特定實施例而顯示。應當瞭解在不脫離本發明的範疇下，其他實施例可被利用及可做出結構變化。
概述
本發明的一實施例描述一為非極性三族氮化物膜得到一平滑表面形態的方法。特定言之，非極性三族氮化物膜的表面波動是藉由控制基板的斜切角來抑制的，非極性三族氮化物膜生長在該基板上。
當前的氮化物裝置通常都生長在極性[0001]c方向內，結果導致在垂直裝置中電荷順著主要傳導方向分離。所形成之極化場不利於當前最先進技術之光電子裝置的性能。
這些裝置順著非極性方向的生長藉由減少順著傳導方向的內建電場，已經顯著地改良了裝置性能。然而，肉眼可見的表面波動通常存在於其等表面上，這對連續的膜生長有害。
到現在，不存在有方法可用於生長非極性三族氮化物膜且沒有肉眼可見的表面波動，儘管其為裝置生長提供較好的裝置層、模板或基板。本發明的新穎特徵是非極性三族氮化物膜通過一斜切基板可生長為肉眼可見之極其平坦的平面膜。作為此之證據，發明者已生長了GaN的{10-10}平面膜。然而，本發明的範疇並不僅僅限於這些實例；相反地，本發明是關於所有氮化物的非極性平面膜，不管其為同質磊晶還是異質磊晶。
技術描述
本發明包括一種在生長製程中利用斜切基板來生長平面非極性三族氮化物膜的方法。例如，極其重要的是基板在適當的方向有一個適於肉眼可見的和極平滑的平面{10-10}GaN生長的斜切角。
在本發明中，一GaN膜係使用一習知的MOCVD方法生長在一具有順著a軸方向之一斜切角的獨立m-GaN基板上。GaN的厚度是5 μm。表面形態是藉由光學顯微鏡方法、原子力顯微鏡(AFM)、及步高測量而研究。
圖1(a)和1(b)是該GaN膜的橫截面的示意圖，GaN膜順著a軸方向在一m平面斜切基板上。特定言之，圖1(a)是在一同軸的m平面基板的表面104上順著a軸方向102的GaN膜100的橫截面示意圖，其中GaN膜100的角錐小平面106a、106b在基板104上形成一角度為α的等腰三角形，及圖1(b)是在有斜切角θ的一基板的表面110上順著a軸方向102之GaN膜108的橫截面示意圖，其中GaN膜108的角錐小平面112a、112b在基板的表面110上有角度β和γ。基板的m平面114在圖1(a)和1(b)中也被顯示。
發明者由AFM證實了相同的小平面獨立於斜切角。因此，θ藉由下列等式定義， β=α-θ Eq.(1)
γ=α+θ Eq.(2)
θ=(β-α)/2 Eq.(3)
試驗結果
生長在一名義上同軸的基板上之{10-10}GaN膜，其已經被發現有包括四個小平面角錐組成的肉眼可見的表面波動。這些角錐小平面通常都傾向於a、c +和c -方向，如圖2(a)和2(b)中顯示的，其中圖2(a)有一個0.01°的斜切角及圖2(b)有一個0.15°的斜切角。已發現藉由增加斜切角到0.15°可得到一更平滑的表面。亦已發現在有一0.30°之斜切角的基板的表面上有一平滑形態，如圖2(c)中顯示的。
圖3顯示從生長在有不同斜切角基板上之m平面GaN角錐特徵的步高測量估計的RMS值。對於0.01°、0.075°、0.15°、0.225°、0.30°及30°的錯向角，在每一個斜切基板上超過1000μm長度的膜之RMS值分別是183nm、121nm、47nm、7.3nm、13nm及13nm。RMS值被發 現隨著斜切角的增加而減少。一般而言，一小於50nm的RMS值被預期用於光電子和電子裝置。因此，較佳的是基板斜切角是0.15°或更大。
圖4顯示從生長在有不同斜切角的基板上的m平面GaN膜角錐特徵的步高測量估計的最大步高值。對於0.01°、0.075°、0.15°、0.225°、0.30°，及30°的錯向角，在每一個斜切基板上超過1000μm長度的膜之最大步高值分別是974nm、427nm、61nm、14nm、13nm，及25nm。最大步高值被發現隨著斜切角的增加而減少。從圖4判斷，較佳的基板斜切角是0.15°或更大。
製程步驟
圖5是繪示一種用於生長三族氮化物層之方法(也參照圖1(a)和圖1(b))的流程圖，包括下列步驟的一個或多個：
步驟500代表選擇一斜切角θ以抑制非極性三族氮化物膜的表面波動之步驟。
步驟502代表得到含一具有期望斜切角之斜切的一基板之步驟。例如，斜切可藉由截割基板得到，或者選擇一有期望斜切的基板。
步驟504代表在基板的斜切上生長非極性三族氮化物層之步驟，其中為了增加非極性三族氮化物膜108的表面平度，斜切包括關於基板的晶體平面114成斜切角θ的基板一表面110。晶體平面114可以是一m平面，非極性三族氮化物膜108可以是m平面，及斜切角θ可以是朝向一a軸方向及包括一朝向a軸方向之0.15°或更大的斜切角及朝向a軸方向小於30°的斜切角。
步驟506代表使用這種方法生長的一非極性基於三族氮化物的裝置或膜，包括，例如，一有一平滑表面形態的非極性三族氮化物膜，其生長在一基板的一斜切上，其中表面形態比沒有斜切的要平滑。
圖6是一非極性三族氮化物膜600的橫截面示意圖，例如，在一基 板604的斜切602a上的生長，其中膜600的一頂面606是一非極性平面。斜切602a可以是關於基板604的一晶體平面610成一斜切角608的基板604一表面602b。晶體平面610可以是一非極性平面。斜切角608可來自任何晶體平面610，例如，一半極性平面或c平面，這樣膜600是非極性的或有一非極性配向。
膜600可以是一m平面三族氮化物非極性膜諸如GaN，晶體平面610可以是m平面，及斜切角608可以是朝向a軸方向612及包括一朝向a軸方向612之0.15°或更大的斜切角608及朝向a軸方向612小於30°的斜切角608。然而用於斜切角之大於0.15°且小於30°的角範圍也應適用於其他非極性三族氮化物材料膜600(如a平面或m平面(Al，B，Ga，In)N化合物)，及關於其他非極性晶體平面610在其他非極性方向612有斜切。因此，舉例而言，關於任何晶體平面610或在任何方向612，斜切角608可以是0.15°或更大，且小於30°，只要斜切角608達到一非極性膜600。例如，斜切角608可以是充分地小使得膜600是非極性的。
膜600，或膜600的頂面606可包括表面波動(圖1(b)中116)，這可以是藉由斜切角608而抑制(一般而言，增大斜切角608會增加波動116的抑制，或增加平滑性和平坦度，或減少波動116的步高118a)。表面波動116可包括小平面的角錐。斜切角608可為使得在長度超過1000微米之頂面606上的一個或多個波動116的一均方根(RMS)步高118a是50nm或更少。斜切角608可為使得在長度超過1000微米之頂面606上波動116的一最大步高118a是61nm或更少。表面波動116可藉由斜切角608而抑制，使得波動116的一步高118a少於沒有斜切的波動120的步高118b。膜600可包括極平滑的、平的、平坦的、或具小平面的一頂面606。
表面波動200a和200b也被分別地顯示在圖2(a)和2(b)中。在圖2(b)中，斜切角θ被增大因此表面波動200b相對於表面波動200a被抑制。 在圖2(c)中，斜切角θ被進一步增大因此表面波動甚至進一步被抑制或不存在。
膜600可能進一步包括沈積在頂面606上的三族氮化物614a。斜切角608可為使得頂面606，及/或生長在頂面600上的一個或多個層614a的表面614b是充分地平滑以適於一量子阱介面(例如，在一量子阱層和一屏障層之間)或一異質接面。膜600可以是一基板或模板，頂面606可以是充分地平滑以適於在頂面606上裝置品質(Al，B，Ga，In)N化合物層614a(例如，光電子或電晶體裝置層)的後續生長。
通常，膜600是一直接生長而不是一橫向磊晶過度生長。膜600可以是有任何厚度的一個或多個層，就是一厚的或薄的層。例如膜600可足夠厚以成為一塊狀晶體或獨立式基板。
一裝置616，比如雷射、發光二極體、或電晶體，可使用膜600製成。例如，膜600可包括裝置層。或者裝置層614a可被沉積在膜600的表面上。裝置層600、614a可以是例如p-n接面層、主動層、量子阱層、屏障層、或異質接面層。生長600可從基板604被移除以提供一獨立生長或膜。
可能的修改和變化
除了上面描述的斜切GaN獨立式基板外，其他的基板，比如m平面SiC、ZnO、及γ-LiAlO2，也可被用作起始材料。
儘管本發明已使用GaN膜證實，AlN、InN或任何相關的合金也可被使用。
本發明並不限於上面描述的MOCVD磊晶生長方法，而是也可以使用其他晶體生長方法，比如HVPE、MBE等等。
另外，熟悉此項技術者可能會辨認出這些技術、製程、材料等等，也可適用於其他方向的斜切角，比如c軸方向，而有相似的結果。
優點和改良
同軸的m平面GaN磊晶層在其等表面上經常有角錐形狀的特徵。藉由控制晶體斜切方向和角度，可得到平滑的表面，及因此可達到高品質裝置結構。
例如，有平滑量子阱介面的一雷射二極體可增強裝置的性能。在另一個實例中，適於異質結構磊晶裝置，比如高電子遷移率電晶體(HEMT)或異質接面雙極性電晶體(HBT)的一平滑介面，可減少載子散射且允許二維電子氣(2DEG)的高遷移率。總之，本發明可增強任何裝置的性能，其中主動層平坦度對裝置性能是至關重要的。
另外，通過一斜切基板之增強的步驟流程生長模式可抑制在有一高摻雜劑濃度的GaN膜中可通常被觀察到的缺點形成和傳播。此外，這可擴大m-GaN的生長窗，擴大窗可導致在製造中更好的良率及可用於任何類型的橫向磊晶的過度生長、選擇性區域生長，及奈米結構生長。
結論
這裏總結本發明的較佳實施例的描述。為繪示及描述之目的，已提出本發明的一個或多個實施例的先前描述。不希望成為無遺漏的或限制本發明到揭示的精確形式。按照上面的教義很多修改和變化是可以的。希望本發明的範疇不是藉由這裏詳細的描述而限制，而是藉由附加於此的請求項而限制。
102‧‧‧a軸方向
108‧‧‧GaN膜
110‧‧‧表面
112a‧‧‧角錐小平面
112b‧‧‧角錐小平面
114‧‧‧m平面
116a‧‧‧波動
118b‧‧‧步高

Claims (21)

  1. 一種用於生長一半導體膜的方法，其包括：於一斜切基板(miscut substrate)之一表面上或上方生長一非極性三族氮化物膜(nonpolar III-nitride film)，其中該非極性三族氮化物膜上之表面波動(surface undulations)係藉由控制該斜切基板之該表面之一斜切方向及角度(miscut direction and angle)而抑制。
  2. 如請求項1之方法，其中該表面波動係於該非極性三族氮化物膜之一頂面上。
  3. 如請求項2之方法，其中該非極性三族氮化物膜之該頂面係一非極性平面。
  4. 如請求項1之方法，其中該斜切角係關於該斜切基板之一晶體平面而被判定。
  5. 如請求項4之方法，其中該基板之該晶體平面係一非極性平面。
  6. 如請求項1之方法，其中該斜切角係朝向一非極性方向及包括一朝向該非極性方向之0.15°或更大的斜切角及一朝向該非極性方向之小於30°的斜切角。
  7. 如請求項1之方法，其中該非極性三族氮化物膜之該等表面波動之一或多者在一長度上的一均方根(RMS)步高是50nm或更少。
  8. 如請求項1之方法，其中該等表面波動包括平面角椎。
  9. 如請求項1之方法，其中該非極性三族氮化物膜係適於裝置品質(Al，B，Ga，In)N層的後續生長之一基板或模板。
  10. 如請求項1之方法，其中該非極性三族氮化物膜具有較一生長於沒有一斜切之一基板上的非極性三族氮化物膜更平滑之一表面型態。
  11. 一種半導體膜，其包括： 生長於一斜切基板之一表面上或上方之一非極性三族氮化物膜，其中該非極性三族氮化物膜上之表面波動係藉由控制該斜切基板之該表面之一斜切方向及角度而抑制。
  12. 如請求項11之膜，其中該非極性三族氮化物膜之該等表面波動之一或多者在一長度上之一均方根(RMS)步高是50nm或更少。
  13. 如請求項11之膜，其中該表面波動係於該非極性三族氮化物膜之一頂面上。
  14. 如請求項13之膜，其中該非極性三族氮化物膜之該頂面係一非極性平面。
  15. 如請求項11之膜，其中該斜切角係關於該斜切基板之一晶體平面而被判定。
  16. 如請求項15之膜，其中該基板之該晶體平面係一非極性平面。
  17. 如請求項11之膜，其中該斜切角係朝向一非極性方向及包括一朝向該非極性方向之0.15°或更大的斜切角及一朝向該非極性方向之小於30°的斜切角。
  18. 如請求項11之膜，其中該等表面波動包括平面角椎。
  19. 如請求項11之膜，其中該非極性三族氮化物膜係適於裝置品質(Al，B，Ga，In)N層的後續生長之一基板或模板。
  20. 如請求項11之膜，其中該非極性三族氮化物膜具有較一生長於沒有一斜切之一基板上的非極性三族氮化物膜更平滑之一表面型態。
  21. 一種裝置，其使用如請求項11之膜所製造。
TW103138109A 2007-06-15 2008-06-16 非極性三族氮化物膜、使用其製造之裝置及生長其之方法 TWI604512B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94420607P 2007-06-15 2007-06-15

Publications (2)

Publication Number Publication Date
TW201515068A TW201515068A (zh) 2015-04-16
TWI604512B true TWI604512B (zh) 2017-11-01

Family

ID=40131512

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097122460A TWI469186B (zh) 2007-06-15 2008-06-16 非極性三族氮化物膜、使用其製造之裝置及生長其之方法
TW103138109A TWI604512B (zh) 2007-06-15 2008-06-16 非極性三族氮化物膜、使用其製造之裝置及生長其之方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW097122460A TWI469186B (zh) 2007-06-15 2008-06-16 非極性三族氮化物膜、使用其製造之裝置及生長其之方法

Country Status (5)

Country Link
US (5) US8158497B2 (zh)
JP (1) JP2010529943A (zh)
KR (1) KR101515058B1 (zh)
TW (2) TWI469186B (zh)
WO (1) WO2008157510A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101537300B1 (ko) * 2007-08-08 2015-07-16 더 리전츠 오브 더 유니버시티 오브 캘리포니아 미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들
JP2011511462A (ja) 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ウエハの軸外カットによる窒化物発光ダイオードの偏光の向上
WO2010101946A1 (en) * 2009-03-02 2010-09-10 The Regents Of The University Of California DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
JP4375497B1 (ja) 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
US9290861B2 (en) * 2009-10-16 2016-03-22 Ngk Insulators, Ltd. Group 13 nitride crystal with stepped surface
JP5972798B2 (ja) * 2010-03-04 2016-08-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｃ方向において＋／−１５度より少ないミスカットを有するｍ面基板上の半極性ｉｉｉ族窒化物光電子デバイス
US20110233521A1 (en) * 2010-03-24 2011-09-29 Cree, Inc. Semiconductor with contoured structure
WO2013049578A2 (en) 2011-09-30 2013-04-04 Saint-Gobain Ceramics & Plastics, Inc. Group iii-v substrate material with particular crystallographic features and methods of making
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
CN113013302A (zh) * 2021-02-26 2021-06-22 东莞市中麒光电技术有限公司 InGaN基红光LED芯片结构的制备方法
CN113640328B (zh) * 2021-08-12 2024-01-23 安徽长飞先进半导体有限公司 基于x射线的AlGaN层Al组分测定方法
KR102564956B1 (ko) * 2021-11-25 2023-08-08 재단법인대구경북과학기술원 사파이어 미스컷 기판을 이용한 무자기장 스핀궤도토크 스위칭 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845370B2 (en) * 1998-11-12 2005-01-18 Accenture Llp Advanced information gathering for targeted activities
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP2006024897A (ja) * 2004-06-11 2006-01-26 Mitsubishi Chemicals Corp 窒化物半導体基板及びその製造方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4580862B2 (ja) 2005-11-09 2010-11-17 東京製綱株式会社 土木施設用ロープの方向変換装置
JP2008285364A (ja) * 2007-05-17 2008-11-27 Sumitomo Electric Ind Ltd ＧａＮ基板、それを用いたエピタキシャル基板及び半導体発光素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
P. A. Grudowski et al., "The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition " , Appl. Phys. Lett. 69, 3626 (1996) *

Also Published As

Publication number Publication date
US20160230312A1 (en) 2016-08-11
US8158497B2 (en) 2012-04-17
KR20100029783A (ko) 2010-03-17
KR101515058B1 (ko) 2015-04-24
US8691671B2 (en) 2014-04-08
TW201515068A (zh) 2015-04-16
JP2010529943A (ja) 2010-09-02
US9828695B2 (en) 2017-11-28
US8791000B2 (en) 2014-07-29
US9340899B2 (en) 2016-05-17
US20140138679A1 (en) 2014-05-22
US20120175739A1 (en) 2012-07-12
TW200915394A (en) 2009-04-01
TWI469186B (zh) 2015-01-11
WO2008157510A1 (en) 2008-12-24
US20080308907A1 (en) 2008-12-18
US20140291694A1 (en) 2014-10-02

Similar Documents

Publication Publication Date Title
TWI604512B (zh) 非極性三族氮化物膜、使用其製造之裝置及生長其之方法
TWI453813B (zh) 用於生長平坦半極性的氮化鎵之技術
EP2313543B1 (en) Growth of planar and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe)
US20170327969A1 (en) Planar nonpolar group iii-nitride films grown on miscut substrates
US8405128B2 (en) Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
US7575947B2 (en) Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
US8729671B2 (en) Method for increasing the area of non-polar and semi-polar nitride substrates
Araki et al. Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy
Joblot et al. Growth of wurtzite‐GaN on silicon (100) substrate by molecular beam epitaxy