JP2010529943A - ミスカット基板上に成長したプレーナ無極性m平面III族窒化物薄膜 - Google Patents
ミスカット基板上に成長したプレーナ無極性m平面III族窒化物薄膜 Download PDFInfo
- Publication number
- JP2010529943A JP2010529943A JP2010512426A JP2010512426A JP2010529943A JP 2010529943 A JP2010529943 A JP 2010529943A JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010512426 A JP2010512426 A JP 2010512426A JP 2010529943 A JP2010529943 A JP 2010529943A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- miscut
- angle
- plane
- miscut angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 26
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 10
- 229910002601 GaN Inorganic materials 0.000 description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 230000010287 polarization Effects 0.000 description 14
- 230000005693 optoelectronics Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本出願は、同時係属中であり、そして同一人に譲渡された次の米国仮特許出願の利益を米国特許法第119条(e)に基づいて主張するものである。該米国仮特許出願とは、Asako Hirai、Zhongyuan Jia、Makoto Saito、Hisashi Yamada、Kenji Iso、Steven P.DenBaars、Shuji Nakamura、およびJames S.Speckによって2007年6月15日に出願された米国仮特許出願第60/944,206号、発明の名称は「PLANAR NONPOLAR m−PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES」、代理人整理番号30794.238−US−P1(2007−674)であり、該出願は、参考として本明細書中に援用される。
本発明は、無極性m平面のプレーナ薄膜の成長技術に関し、より具体的には、何らの表面アンジュレーション(undulation)のない原子的に平滑なm−GaN薄膜の成長技術に関する。
窒化ガリウム(GaN)、ならびにアルミニウムおよびインジウムを結合させた、窒化ガリウムの三元化合物および四元化合物(AlGaN、InGaN、AlInGaN)の有用性は、可視光および紫外線の光電子デバイスおよび高出力電子デバイスの製作に対して十分に確立されてきた。これらの化合物は、III族窒化物またはIII族(III−)窒化物または単に窒化物として、あるいは(Al,B,Ga,In)Nという用語によって本明細書中に表されている。これらの化合物から作られるデバイスは、一般に、分子線エピタキシー(MBE)、有機金属化学気相成長(MOCVD)、および水素化物気相エピタキシー(HVPE)を含む成長技術を用いて、エピタキシャルに成長させられる。
本発明は、何らの巨視的な表面アンジュレーションがない原子的に平滑な表面を有する、プレーナ無極性III族窒化物薄膜を成長させるための方法を開示し、該方法は、該無極性III族窒化物薄膜が成長する基板のミスカット(miscut)角を選択することによって、該無極性III族窒化物薄膜の該表面アンジュレーションを抑制する。該ミスカット角は、a軸方向に向いた平面内のミスカット角であり、該ミスカット角は、a軸方向に向いた0.15°以上のミスカット角、およびa軸方向に向いた30°未満のミスカット角である。
以下の好適な実施形態の説明において、本明細書の一部分を形成する添付の図面に対して参照がなされ、該図面においては、本発明が実施され得る特定の実施形態が例示のために示される。他の実施形態が利用され得、そして構造的な変更が、本発明の範囲を逸脱することなく行われ得ることは理解されるべきである。
本発明の一実施形態は、無極性III族窒化物薄膜に対する平滑な表面モフォロジーを取得する方法を記載している。特に、無極性III族窒化物薄膜の表面のアンジュレーションは、無極性III族窒化物薄膜が成長する基板のミスカット角を制御することによって抑制される。
本発明は、成長プロセスにミスカット基板を利用する、プレーナ無極性III族窒化物薄膜を成長させる方法を包含する。例えば、基板が、巨視的と原子的との両方においてプレーナ{10−10}GaNの成長に対して適切な方向のミスカット角を有することは非常に重要である。
β=α−θ 式(1)
γ=α+θ 式(2)
θ=(β−α)/2 式(3)
となる。
名目上は軸オンである基板上に成長した{10−10}GaN薄膜は、4つのファセット化されたピラミッド形から成る巨視的な表面アンジュレーションを有することが見出されている。これらのピラミッド形ファセットは一般に、図2(a)および図2(b)に示されるように、a方向、C+およびC−方向に傾斜している。図2(a)が0.01°のミスカット角を有しており、図2(b)が0.15°のミスカット角を有する。より平滑な表面が、ミスカット角を0.15°まで増大することによって取得されることが見出されている。0.30°のミスカット角を有する基板上の表面が、図2(c)に示されるように、平滑なモフォロジーを有することもまた見出されている。
図5は、III族窒化物層を成長させる方法を例示するフローチャートであり、以下のステップの1つ以上を包含している(図1(a)および図1(b)もまた参照されたい)。
上記のミスカットGaN自立基板に加えて、m平面のSiC、ZnO、およびγ−LiAlO2などの異質の基板が、スタート(starting)材料としてもまた用いられ得る。
軸オンのm平面GaNエピタキシャル層は、常にそれらの表面上に形作られたピラミッド形を有している。結晶のミスカット方向と角度とを制御することによって、平滑な表面が取得され得、従って、高品質のデバイス構造が達成され得る。
ここでは、本発明の好適な実施形態の説明を締めくくる。本発明の1つ以上の実施形態の上記の説明は、例示および説明の目的のために提示されている。それは、網羅的であることを意図しておらず、また開示された正にその形態に本発明を限定することをも意図していない。多くの修正および変形が、上記の教示を考慮すれば可能である。本発明の範囲は、この詳細な説明によってではなく、添付の特許請求の範囲によって制限されることが意図されている。
Claims (24)
- 基板のミスカット上に成長した無極性III族窒化物薄膜であって、
該薄膜の上部表面は、無極性平面であり、
該ミスカットは、該基板の結晶面に関してミスカット角で傾けられた該基板の表面である、
薄膜。 - 前記結晶面は、m平面であり、
前記無極性III族窒化物薄膜は、m平面であり、
前記ミスカット角は、a軸方向に向き、該a軸方向に向いた0.15°以上のミスカット角と、該a軸方向に向いた30°未満のミスカット角とを含む、
請求項1に記載の薄膜。 - 前記ミスカット角は、0.15°以上である、請求項1に記載の薄膜。
- 前記上部表面は、原子的に平滑またはプレーナである、請求項1に記載の薄膜。
- 前記ミスカット角は、前記上部表面上の1つ以上のアンジュレーションのステップ高さの二乗平均平方根(RMS)が1000マイクロメートルの長さにわたって50nm以下であるような角度である、請求項1に記載の薄膜。
- 前記ミスカット角は、前記上部表面上の1つ以上のアンジュレーションのステップ高さの最大が1000マイクロメートルの長さにわたって61nm以下であるような角度である、請求項1に記載の薄膜。
- 前記アンジュレーションは、ファセット化されたピラミッド形を備える、請求項6に記載の薄膜。
- 前記結晶面は、無極性平面である、請求項1に記載の薄膜。
- 前記ミスカット角は、前記薄膜が無極性であるように、十分に小さい、請求項1に記載の薄膜。
- 前記ミスカット角は、前記上部表面と、該上部表面上に堆積された1つ以上の層の1つ以上の表面とが量子井戸界面またはヘテロ接合界面に対して十分に平滑であるような角度である、請求項1に記載の薄膜。
- 前記薄膜は、基板またはテンプレートであり、前記上部表面は、デバイスクオリティの(Al,B,Ga,In)N層のその後の該上部表面上での成長に適している、請求項1に記載の薄膜。
- 請求項1に記載の薄膜を用いて製作されたデバイス。
- 無極性III族窒化物薄膜を成長させるための方法であって、
(a)基板のミスカット上に無極性III族窒化物薄膜を成長させることであって、
該薄膜の上部表面は、無極性平面であり、
該ミスカットは、該基板の結晶面に関してミスカット角で傾けられた該基板の表面である、こと
を包含する、方法。 - 前記結晶面は、m平面であり、
前記無極性III族窒化物薄膜は、m平面であり、
前記ミスカット角は、a軸方向に向き、該a軸方向に向いた0.15°以上のミスカット角と、該a軸方向に向いた30°未満のミスカット角とを含む、
請求項13に記載の方法。 - 前記ミスカット角は、0.15°以上である、請求項13に記載の方法。
- 前記上部表面は、原子的に平滑またはプレーナである、請求項13に記載の方法。
- 前記ミスカット角は、前記上部表面上の1つ以上のアンジュレーションのステップ高さの二乗平均平方根(RMS)が1000マイクロメートルの長さにわたって50nm以下であるような角度である、請求項13に記載の方法。
- 前記ミスカット角は、前記上部表面上の1つ以上のアンジュレーションのステップ高さの最大が1000マイクロメートルの長さにわたって61nm以下であるような角度である、請求項13に記載の方法。
- 前記アンジュレーションは、ファセット化されたピラミッド形を備える、請求項18に記載の方法。
- 前記結晶面は、無極性平面である、請求項13に記載の方法。
- 前記ミスカット角は、前記薄膜が無極性であるように、十分に小さい、請求項13に記載の方法。
- 前記ミスカット角は、前記上部表面と、該上部表面上に堆積された1つ以上の層の1つ以上の表面とが量子井戸界面またはヘテロ接合界面に対して十分に平滑であるような角度である、請求項13に記載の方法。
- 前記薄膜は、基板またはテンプレートであり、前記上部表面は、デバイスクオリティの(Al,B,Ga,In)N層のその後の該上部表面上での成長に適している、請求項13に記載の方法。
- 請求項13に記載の方法を用いて製作された無極性III族窒化物薄膜。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94420607P | 2007-06-15 | 2007-06-15 | |
PCT/US2008/067149 WO2008157510A1 (en) | 2007-06-15 | 2008-06-16 | Planar nonpolar m-plane group iii nitride films grown on miscut substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010529943A true JP2010529943A (ja) | 2010-09-02 |
JP2010529943A5 JP2010529943A5 (ja) | 2012-07-12 |
Family
ID=40131512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010512426A Pending JP2010529943A (ja) | 2007-06-15 | 2008-06-16 | ミスカット基板上に成長したプレーナ無極性m平面III族窒化物薄膜 |
Country Status (5)
Country | Link |
---|---|
US (5) | US8158497B2 (ja) |
JP (1) | JP2010529943A (ja) |
KR (1) | KR101515058B1 (ja) |
TW (2) | TWI469186B (ja) |
WO (1) | WO2008157510A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101537300B1 (ko) * | 2007-08-08 | 2015-07-16 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 미스컷 기판들 상에 성장된 평면의 무극성 m-면 Ⅲ족-질화물 막들 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100107054A (ko) | 2008-02-01 | 2010-10-04 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 웨이퍼 비축 절단에 의한 질화물 발광 다이오드들의 광학 편광의 강화 |
KR20110129444A (ko) * | 2009-03-02 | 2011-12-01 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 비극성 또는 반극성 (갈륨, 알루미늄, 인듐, 붕소)질소 기판들 상에 성장한 소자들 |
JP4375497B1 (ja) * | 2009-03-11 | 2009-12-02 | 住友電気工業株式会社 | Iii族窒化物半導体素子、エピタキシャル基板、及びiii族窒化物半導体素子を作製する方法 |
WO2011046203A1 (ja) * | 2009-10-16 | 2011-04-21 | 日本碍子株式会社 | 下地基板、3b族窒化物結晶及びその製法 |
WO2011109754A1 (en) | 2010-03-04 | 2011-09-09 | The Regents Of The University Of California | Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction |
US20110233521A1 (en) * | 2010-03-24 | 2011-09-29 | Cree, Inc. | Semiconductor with contoured structure |
EP2761645A4 (en) | 2011-09-30 | 2015-06-10 | Saint Gobain Cristaux Et Detecteurs | GROUP III-V SUPPLY MATERIAL, INCLUDING, IN PARTICULAR, CRYSTALLOGRAPHIC CHARACTERISTICS AND METHOD FOR THE PRODUCTION THEREOF |
TWI529964B (zh) | 2012-12-31 | 2016-04-11 | 聖戈班晶體探測器公司 | 具有薄緩衝層的iii-v族基材及其製備方法 |
CN113013302A (zh) * | 2021-02-26 | 2021-06-22 | 东莞市中麒光电技术有限公司 | InGaN基红光LED芯片结构的制备方法 |
CN113640328B (zh) * | 2021-08-12 | 2024-01-23 | 安徽长飞先进半导体有限公司 | 基于x射线的AlGaN层Al组分测定方法 |
KR102564956B1 (ko) * | 2021-11-25 | 2023-08-08 | 재단법인대구경북과학기술원 | 사파이어 미스컷 기판을 이용한 무자기장 스핀궤도토크 스위칭 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006024897A (ja) * | 2004-06-11 | 2006-01-26 | Mitsubishi Chemicals Corp | 窒化物半導体基板及びその製造方法 |
JP2008285364A (ja) * | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN基板、それを用いたエピタキシャル基板及び半導体発光素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6845370B2 (en) * | 1998-11-12 | 2005-01-18 | Accenture Llp | Advanced information gathering for targeted activities |
US6489636B1 (en) * | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US7208393B2 (en) * | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
JP3888374B2 (ja) * | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
US7504274B2 (en) * | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
JP4580862B2 (ja) | 2005-11-09 | 2010-11-17 | 東京製綱株式会社 | 土木施設用ロープの方向変換装置 |
-
2008
- 2008-06-16 WO PCT/US2008/067149 patent/WO2008157510A1/en active Application Filing
- 2008-06-16 JP JP2010512426A patent/JP2010529943A/ja active Pending
- 2008-06-16 KR KR1020097027548A patent/KR101515058B1/ko active IP Right Grant
- 2008-06-16 US US12/140,096 patent/US8158497B2/en active Active
- 2008-06-16 TW TW097122460A patent/TWI469186B/zh active
- 2008-06-16 TW TW103138109A patent/TWI604512B/zh active
-
2012
- 2012-03-22 US US13/427,590 patent/US8691671B2/en active Active
-
2014
- 2014-01-27 US US14/164,434 patent/US8791000B2/en active Active
- 2014-06-16 US US14/305,734 patent/US9340899B2/en active Active
-
2016
- 2016-04-20 US US15/134,081 patent/US9828695B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006024897A (ja) * | 2004-06-11 | 2006-01-26 | Mitsubishi Chemicals Corp | 窒化物半導体基板及びその製造方法 |
JP2008285364A (ja) * | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN基板、それを用いたエピタキシャル基板及び半導体発光素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101537300B1 (ko) * | 2007-08-08 | 2015-07-16 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 미스컷 기판들 상에 성장된 평면의 무극성 m-면 Ⅲ족-질화물 막들 |
Also Published As
Publication number | Publication date |
---|---|
TW201515068A (zh) | 2015-04-16 |
KR20100029783A (ko) | 2010-03-17 |
US8791000B2 (en) | 2014-07-29 |
US20160230312A1 (en) | 2016-08-11 |
US9340899B2 (en) | 2016-05-17 |
US8691671B2 (en) | 2014-04-08 |
WO2008157510A1 (en) | 2008-12-24 |
US9828695B2 (en) | 2017-11-28 |
US20080308907A1 (en) | 2008-12-18 |
US20140138679A1 (en) | 2014-05-22 |
TWI604512B (zh) | 2017-11-01 |
TW200915394A (en) | 2009-04-01 |
KR101515058B1 (ko) | 2015-04-24 |
TWI469186B (zh) | 2015-01-11 |
US8158497B2 (en) | 2012-04-17 |
US20120175739A1 (en) | 2012-07-12 |
US20140291694A1 (en) | 2014-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9828695B2 (en) | Planar nonpolar group-III nitride films grown on miscut substrates | |
US20170327969A1 (en) | Planar nonpolar group iii-nitride films grown on miscut substrates | |
KR101499203B1 (ko) | 유기금속 화학기상증착법을 이용한 평면 비극성 (1100) m면 갈륨 질화물의 성장 | |
TWI453813B (zh) | 用於生長平坦半極性的氮化鎵之技術 | |
EP2313543B1 (en) | Growth of planar and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe) | |
JP5638198B2 (ja) | ミスカット基板上のレーザダイオード配向 | |
US8405128B2 (en) | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | |
US8729671B2 (en) | Method for increasing the area of non-polar and semi-polar nitride substrates | |
TW200419652A (en) | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy | |
JP4883931B2 (ja) | 半導体積層基板の製造方法 | |
KR20080063766A (ko) | 유기금속 화학기상증착법을 통한 반극성(Al,In,Ga,B)N의 성장강화방법 | |
KR101028585B1 (ko) | 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110531 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110531 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130313 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130321 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130610 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130708 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131024 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20131031 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20131206 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140422 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140428 |