JP2008290919A5 - - Google Patents

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Publication number
JP2008290919A5
JP2008290919A5 JP2007139839A JP2007139839A JP2008290919A5 JP 2008290919 A5 JP2008290919 A5 JP 2008290919A5 JP 2007139839 A JP2007139839 A JP 2007139839A JP 2007139839 A JP2007139839 A JP 2007139839A JP 2008290919 A5 JP2008290919 A5 JP 2008290919A5
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JP
Japan
Prior art keywords
group iii
nitride semiconductor
iii nitride
crystal growth
base substrate
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JP2007139839A
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English (en)
Japanese (ja)
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JP4915282B2 (ja
JP2008290919A (ja
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Priority claimed from JP2007139839A external-priority patent/JP4915282B2/ja
Publication of JP2008290919A publication Critical patent/JP2008290919A/ja
Publication of JP2008290919A5 publication Critical patent/JP2008290919A5/ja
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JP2007139839A 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 Active JP4915282B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007139839A JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007139839A JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Related Child Applications (1)

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JP2011176551A Division JP2012006830A (ja) 2011-08-12 2011-08-12 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Publications (3)

Publication Number Publication Date
JP2008290919A JP2008290919A (ja) 2008-12-04
JP2008290919A5 true JP2008290919A5 (enExample) 2010-04-15
JP4915282B2 JP4915282B2 (ja) 2012-04-11

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JP2007139839A Active JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

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JP (1) JP4915282B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565042B1 (ja) * 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP5601033B2 (ja) * 2010-05-28 2014-10-08 三菱化学株式会社 窒化物単結晶の製造方法及び窒化物単結晶
JP2012006830A (ja) * 2011-08-12 2012-01-12 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法
JP2019176124A (ja) * 2018-03-26 2019-10-10 日亜化学工業株式会社 半導体装置の製造方法、及び、半導体装置
US11101404B2 (en) 2018-03-26 2021-08-24 Nichia Corporation Method for manufacturing semiconductor device and semiconductor device
JP6963195B2 (ja) * 2019-02-28 2021-11-05 日亜化学工業株式会社 半導体素子の製造方法
US11094536B2 (en) 2019-02-28 2021-08-17 Nichia Corporation Method of manufacturing semiconductor elements
JP7016032B2 (ja) * 2019-09-24 2022-02-04 日亜化学工業株式会社 半導体素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4031648B2 (ja) * 2001-01-29 2008-01-09 松下電器産業株式会社 化合物半導体ウエハの製造方法
JP4084541B2 (ja) * 2001-02-14 2008-04-30 豊田合成株式会社 半導体結晶及び半導体発光素子の製造方法
JP4459723B2 (ja) * 2004-06-08 2010-04-28 株式会社デンソー 炭化珪素単結晶、炭化珪素基板およびその製造方法
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法

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