JP2010536181A5 - - Google Patents

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Publication number
JP2010536181A5
JP2010536181A5 JP2010520332A JP2010520332A JP2010536181A5 JP 2010536181 A5 JP2010536181 A5 JP 2010536181A5 JP 2010520332 A JP2010520332 A JP 2010520332A JP 2010520332 A JP2010520332 A JP 2010520332A JP 2010536181 A5 JP2010536181 A5 JP 2010536181A5
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JP
Japan
Prior art keywords
thin film
substrate
miscut
miscut angle
group iii
Prior art date
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Pending
Application number
JP2010520332A
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English (en)
Japanese (ja)
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JP2010536181A (ja
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Publication date
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Priority claimed from PCT/US2008/072669 external-priority patent/WO2009021201A1/en
Publication of JP2010536181A publication Critical patent/JP2010536181A/ja
Publication of JP2010536181A5 publication Critical patent/JP2010536181A5/ja
Pending legal-status Critical Current

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JP2010520332A 2007-08-08 2008-08-08 ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜 Pending JP2010536181A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95474407P 2007-08-08 2007-08-08
US95476707P 2007-08-08 2007-08-08
PCT/US2008/072669 WO2009021201A1 (en) 2007-08-08 2008-08-08 Planar nonpolar m-plane group iii-nitride films grown on miscut substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014034875A Division JP2014099658A (ja) 2007-08-08 2014-02-26 ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜

Publications (2)

Publication Number Publication Date
JP2010536181A JP2010536181A (ja) 2010-11-25
JP2010536181A5 true JP2010536181A5 (enExample) 2012-09-27

Family

ID=40341775

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010520332A Pending JP2010536181A (ja) 2007-08-08 2008-08-08 ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜
JP2014034875A Pending JP2014099658A (ja) 2007-08-08 2014-02-26 ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014034875A Pending JP2014099658A (ja) 2007-08-08 2014-02-26 ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜

Country Status (5)

Country Link
US (3) US20090039356A1 (enExample)
EP (1) EP2176878A4 (enExample)
JP (2) JP2010536181A (enExample)
KR (1) KR101537300B1 (enExample)
WO (1) WO2009021201A1 (enExample)

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US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP2011511462A (ja) * 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ウエハの軸外カットによる窒化物発光ダイオードの偏光の向上
JP5739824B2 (ja) * 2009-03-02 2015-06-24 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
US20100309943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
JP2011023537A (ja) * 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
CN102782966B (zh) 2010-03-04 2017-04-26 加利福尼亚大学董事会 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5781292B2 (ja) * 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
KR101978536B1 (ko) 2011-09-30 2019-05-14 쌩-고벵 크리스톡스 에 드테끄퇴르 특정한 결정학적 특징을 갖는 ⅲ-ⅴ족 기판 물질 및 제조 방법
KR102130289B1 (ko) 2012-03-30 2020-07-08 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 결정 및 주기표 제 13 족 금속 질화물 결정의 제조 방법
JP5942547B2 (ja) * 2012-03-30 2016-06-29 三菱化学株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP5949064B2 (ja) * 2012-03-30 2016-07-06 三菱化学株式会社 ＧａＮバルク結晶
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法

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KR100707187B1 (ko) * 2005-04-21 2007-04-13 삼성전자주식회사 질화갈륨계 화합물 반도체 소자
JP4988179B2 (ja) * 2005-09-22 2012-08-01 ローム株式会社 酸化亜鉛系化合物半導体素子
JP5896442B2 (ja) * 2006-01-20 2016-03-30 国立研究開発法人科学技術振興機構 Ｉｉｉ族窒化物膜の成長方法
JP2008285364A (ja) * 2007-05-17 2008-11-27 Sumitomo Electric Ind Ltd ＧａＮ基板、それを用いたエピタキシャル基板及び半導体発光素子
JP5118392B2 (ja) * 2007-06-08 2013-01-16 ローム株式会社 半導体発光素子およびその製造方法
JP2010529943A (ja) * 2007-06-15 2010-09-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ミスカット基板上に成長したプレーナ無極性ｍ平面ＩＩＩ族窒化物薄膜

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