JP2009545865A5 - - Google Patents
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- Publication number
- JP2009545865A5 JP2009545865A5 JP2009522085A JP2009522085A JP2009545865A5 JP 2009545865 A5 JP2009545865 A5 JP 2009545865A5 JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009545865 A5 JP2009545865 A5 JP 2009545865A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- layer
- led semiconductor
- quantum
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims 25
- 230000005855 radiation Effects 0.000 claims 3
- 230000001427 coherent effect Effects 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006035627A DE102006035627A1 (de) | 2006-07-31 | 2006-07-31 | LED-Halbleiterkörper |
| PCT/DE2007/001349 WO2008014772A1 (de) | 2006-07-31 | 2007-07-27 | Led-halbleiterkörper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009545865A JP2009545865A (ja) | 2009-12-24 |
| JP2009545865A5 true JP2009545865A5 (enExample) | 2011-06-16 |
Family
ID=38739481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009522085A Pending JP2009545865A (ja) | 2006-07-31 | 2007-07-27 | Led半導体基体 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8405065B2 (enExample) |
| EP (1) | EP2047527B1 (enExample) |
| JP (1) | JP2009545865A (enExample) |
| KR (1) | KR20090033897A (enExample) |
| CN (1) | CN101496187A (enExample) |
| DE (1) | DE102006035627A1 (enExample) |
| TW (1) | TWI370557B (enExample) |
| WO (1) | WO2008014772A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102307920B (zh) | 2009-02-05 | 2014-09-03 | 阿科玛股份有限公司 | 用聚醚酮酮上胶的纤维 |
| JP5684501B2 (ja) * | 2010-07-06 | 2015-03-11 | 昭和電工株式会社 | 発光ダイオード用エピタキシャルウェーハ |
| JP5801542B2 (ja) * | 2010-07-13 | 2015-10-28 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
| JP5228122B1 (ja) | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
| JP6024278B2 (ja) * | 2012-08-10 | 2016-11-16 | 住友電気工業株式会社 | 発光素子 |
| DE102012107795B4 (de) * | 2012-08-23 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
| US9508891B2 (en) | 2014-11-21 | 2016-11-29 | Epistar Corporation | Method for making light-emitting device |
| US9306115B1 (en) | 2015-02-10 | 2016-04-05 | Epistar Corporation | Light-emitting device |
| DE102015109793A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| DE102015109796A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102015119817A1 (de) * | 2015-11-17 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement |
| US9859470B2 (en) * | 2016-03-10 | 2018-01-02 | Epistar Corporation | Light-emitting device with adjusting element |
| DE102019115351A1 (de) * | 2019-06-06 | 2020-12-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen |
| KR102333489B1 (ko) * | 2019-10-01 | 2021-12-01 | 에피스타 코포레이션 | 발광 디바이스 |
| CN112838150B (zh) * | 2020-12-31 | 2022-05-13 | 武汉光迅科技股份有限公司 | 发光二极管及其形成方法 |
| US12278304B2 (en) * | 2021-02-04 | 2025-04-15 | Mellanox Technologies, Ltd. | High modulation speed PIN-type photodiode |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
| GB2263814B (en) * | 1992-01-17 | 1996-01-10 | Northern Telecom Ltd | Semiconductor mixed crystal quantum well device manufacture |
| JPH07202260A (ja) * | 1993-12-27 | 1995-08-04 | Furukawa Electric Co Ltd:The | 歪超格子発光素子 |
| DE69524691T2 (de) * | 1994-08-29 | 2002-08-08 | Matsushita Electric Industrial Co., Ltd. | Halbleiterlaservorrichtung mit verspannter Quantentrogstruktur und deren Herstellungsverfahren |
| JPH09162482A (ja) | 1995-12-08 | 1997-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 面発光半導体レーザ |
| US6233264B1 (en) * | 1996-08-27 | 2001-05-15 | Ricoh Company, Ltd. | Optical semiconductor device having an active layer containing N |
| US5825796A (en) * | 1996-09-25 | 1998-10-20 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
| JPH11150330A (ja) * | 1997-11-14 | 1999-06-02 | Sony Corp | 半導体発光素子 |
| JPH11274635A (ja) * | 1998-03-19 | 1999-10-08 | Hitachi Ltd | 半導体発光装置 |
| US6657233B2 (en) * | 1998-08-19 | 2003-12-02 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device |
| US6711195B2 (en) * | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
| US20030235224A1 (en) * | 2002-06-19 | 2003-12-25 | Ohlander Ulf Roald | Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers |
| US7801194B2 (en) * | 2002-07-01 | 2010-09-21 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical disk unit using the same |
| TWI226138B (en) * | 2003-01-03 | 2005-01-01 | Super Nova Optoelectronics Cor | GaN-based LED vertical device structure and the manufacturing method thereof |
| JP2004235649A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール |
| JP2004296634A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
| JP2004296637A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
| DE102004024611A1 (de) * | 2003-05-23 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung |
| JP2005109124A (ja) | 2003-09-30 | 2005-04-21 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
| TW200520266A (en) * | 2003-11-21 | 2005-06-16 | Sanken Electric Co Ltd | Semiconductor luminous element and manufacturing method of the same |
| JP4164689B2 (ja) * | 2003-11-21 | 2008-10-15 | サンケン電気株式会社 | 半導体発光素子 |
| TWI254469B (en) | 2004-04-14 | 2006-05-01 | Osram Opto Semiconductors Gmbh | Luminous diode chip |
| DE102005016592A1 (de) * | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102004026125A1 (de) * | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zu dessen Herstellung |
| US7684458B2 (en) * | 2004-06-11 | 2010-03-23 | Ricoh Company, Ltd. | Surface-emission laser diode and fabrication process thereof |
| JP4224041B2 (ja) * | 2004-08-26 | 2009-02-12 | シャープ株式会社 | 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム |
| JP2006120884A (ja) | 2004-10-22 | 2006-05-11 | Ricoh Co Ltd | 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム |
| DE102004057802B4 (de) * | 2004-11-30 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht |
| JP2006196880A (ja) | 2004-12-17 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 光半導体装置及びその製造方法 |
| US7459719B2 (en) * | 2004-12-17 | 2008-12-02 | Panasonic Corporation | Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer |
| JP4460473B2 (ja) * | 2005-02-23 | 2010-05-12 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| US7376169B2 (en) * | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
| JP2007012688A (ja) * | 2005-06-28 | 2007-01-18 | Toshiba Corp | 半導体発光素子 |
| DE102006039369A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
| DE102006028692B4 (de) * | 2006-05-19 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
| US8115213B2 (en) * | 2007-02-08 | 2012-02-14 | Phoseon Technology, Inc. | Semiconductor light sources, systems, and methods |
| US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
| US20090238227A1 (en) * | 2008-03-05 | 2009-09-24 | Rohm Co., Ltd. | Semiconductor light emitting device |
| JP5102082B2 (ja) * | 2008-03-18 | 2012-12-19 | 株式会社リコー | 画像形成装置 |
-
2006
- 2006-07-31 DE DE102006035627A patent/DE102006035627A1/de not_active Withdrawn
-
2007
- 2007-07-27 JP JP2009522085A patent/JP2009545865A/ja active Pending
- 2007-07-27 KR KR1020097003151A patent/KR20090033897A/ko not_active Withdrawn
- 2007-07-27 WO PCT/DE2007/001349 patent/WO2008014772A1/de not_active Ceased
- 2007-07-27 US US12/375,528 patent/US8405065B2/en active Active
- 2007-07-27 CN CNA2007800285790A patent/CN101496187A/zh active Pending
- 2007-07-27 EP EP07817415.8A patent/EP2047527B1/de active Active
- 2007-07-30 TW TW096127685A patent/TWI370557B/zh active
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