JP2009545865A5 - - Google Patents

Download PDF

Info

Publication number
JP2009545865A5
JP2009545865A5 JP2009522085A JP2009522085A JP2009545865A5 JP 2009545865 A5 JP2009545865 A5 JP 2009545865A5 JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009545865 A5 JP2009545865 A5 JP 2009545865A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
layer
led semiconductor
quantum
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009522085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009545865A (ja
Filing date
Publication date
Priority claimed from DE102006035627A external-priority patent/DE102006035627A1/de
Application filed filed Critical
Publication of JP2009545865A publication Critical patent/JP2009545865A/ja
Publication of JP2009545865A5 publication Critical patent/JP2009545865A5/ja
Pending legal-status Critical Current

Links

JP2009522085A 2006-07-31 2007-07-27 Led半導体基体 Pending JP2009545865A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006035627A DE102006035627A1 (de) 2006-07-31 2006-07-31 LED-Halbleiterkörper
PCT/DE2007/001349 WO2008014772A1 (de) 2006-07-31 2007-07-27 Led-halbleiterkörper

Publications (2)

Publication Number Publication Date
JP2009545865A JP2009545865A (ja) 2009-12-24
JP2009545865A5 true JP2009545865A5 (enExample) 2011-06-16

Family

ID=38739481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009522085A Pending JP2009545865A (ja) 2006-07-31 2007-07-27 Led半導体基体

Country Status (8)

Country Link
US (1) US8405065B2 (enExample)
EP (1) EP2047527B1 (enExample)
JP (1) JP2009545865A (enExample)
KR (1) KR20090033897A (enExample)
CN (1) CN101496187A (enExample)
DE (1) DE102006035627A1 (enExample)
TW (1) TWI370557B (enExample)
WO (1) WO2008014772A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102307920B (zh) 2009-02-05 2014-09-03 阿科玛股份有限公司 用聚醚酮酮上胶的纤维
JP5684501B2 (ja) * 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
DE102012107795B4 (de) * 2012-08-23 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US9306115B1 (en) 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102015109796A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102015119817A1 (de) * 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Halbleiterbauelement
US9859470B2 (en) * 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
KR102333489B1 (ko) * 2019-10-01 2021-12-01 에피스타 코포레이션 발광 디바이스
CN112838150B (zh) * 2020-12-31 2022-05-13 武汉光迅科技股份有限公司 发光二极管及其形成方法
US12278304B2 (en) * 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
GB2263814B (en) * 1992-01-17 1996-01-10 Northern Telecom Ltd Semiconductor mixed crystal quantum well device manufacture
JPH07202260A (ja) * 1993-12-27 1995-08-04 Furukawa Electric Co Ltd:The 歪超格子発光素子
DE69524691T2 (de) * 1994-08-29 2002-08-08 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung mit verspannter Quantentrogstruktur und deren Herstellungsverfahren
JPH09162482A (ja) 1995-12-08 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
US6233264B1 (en) * 1996-08-27 2001-05-15 Ricoh Company, Ltd. Optical semiconductor device having an active layer containing N
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
JPH11150330A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
JPH11274635A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体発光装置
US6657233B2 (en) * 1998-08-19 2003-12-02 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US20030235224A1 (en) * 2002-06-19 2003-12-25 Ohlander Ulf Roald Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
TWI226138B (en) * 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
JP2004296634A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
JP2004296637A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
DE102004024611A1 (de) * 2003-05-23 2005-03-03 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleitervorrichtung
JP2005109124A (ja) 2003-09-30 2005-04-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
TW200520266A (en) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
JP4164689B2 (ja) * 2003-11-21 2008-10-15 サンケン電気株式会社 半導体発光素子
TWI254469B (en) 2004-04-14 2006-05-01 Osram Opto Semiconductors Gmbh Luminous diode chip
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102004026125A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
US7684458B2 (en) * 2004-06-11 2010-03-23 Ricoh Company, Ltd. Surface-emission laser diode and fabrication process thereof
JP4224041B2 (ja) * 2004-08-26 2009-02-12 シャープ株式会社 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム
JP2006120884A (ja) 2004-10-22 2006-05-11 Ricoh Co Ltd 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
JP2006196880A (ja) 2004-12-17 2006-07-27 Matsushita Electric Ind Co Ltd 光半導体装置及びその製造方法
US7459719B2 (en) * 2004-12-17 2008-12-02 Panasonic Corporation Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
JP4460473B2 (ja) * 2005-02-23 2010-05-12 シャープ株式会社 半導体レーザ装置の製造方法
US7376169B2 (en) * 2005-03-07 2008-05-20 Joseph Reid Henrichs Optical phase conjugation laser diode
JP2007012688A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体発光素子
DE102006039369A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
US8115213B2 (en) * 2007-02-08 2012-02-14 Phoseon Technology, Inc. Semiconductor light sources, systems, and methods
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US20090238227A1 (en) * 2008-03-05 2009-09-24 Rohm Co., Ltd. Semiconductor light emitting device
JP5102082B2 (ja) * 2008-03-18 2012-12-19 株式会社リコー 画像形成装置

Similar Documents

Publication Publication Date Title
JP2009545865A5 (enExample)
JP6046971B2 (ja) 向上した光抽出を有する紫外線発光素子
US9240517B2 (en) Strain relief superlattices and optoelectronic devices including the same
JP5211121B2 (ja) 半導体発光素子の製造方法
Ivanov et al. Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3
US9412901B2 (en) Superlattice structure
JP5818192B2 (ja) 発光ダイオード素子およびその製造方法
KR20160037968A (ko) 반도체 기판 및 반도체 기판의 제조 방법
KR20090033897A (ko) Led 반도체 몸체
TW201230385A (en) III-nitride light emitting device
TWI670852B (zh) 用於功率電子元件的三族氮化物基板及其製作方法
JP5159858B2 (ja) 窒化ガリウム系化合物半導体基板とその製造方法
TW201115784A (en) Nitride-based semiconductor light-emitting element
WO2011040309A1 (ja) 半導体発光素子を作製する方法
EP3217436A1 (en) Semiconductor device and production method therefor
Park et al. Theoretical studies on TM-polarized light emission for ultraviolet BAlGaN/AlN optoelectronic devices
TWI504018B (zh) 半導體元件及其製造方法
JP2009059797A (ja) 窒化物半導体レーザ素子
Ramanathan et al. Fluorescence spectroscopy of electrochemically self-assembled ZnSe and Mn: ZnSenanowires
JP2009102217A (ja) GaN基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
Finke et al. Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering
JP4519693B2 (ja) 窒化物半導体
TWI858473B (zh) 化合物半導體基板
US20130307012A1 (en) Tension release layer structure of light-emitting diode
TWI899596B (zh) 半導體發光元件和半導體發光元件的製造方法