JP6046971B2 - 向上した光抽出を有する紫外線発光素子 - Google Patents
向上した光抽出を有する紫外線発光素子 Download PDFInfo
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- JP6046971B2 JP6046971B2 JP2012212163A JP2012212163A JP6046971B2 JP 6046971 B2 JP6046971 B2 JP 6046971B2 JP 2012212163 A JP2012212163 A JP 2012212163A JP 2012212163 A JP2012212163 A JP 2012212163A JP 6046971 B2 JP6046971 B2 JP 6046971B2
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- 238000000605 extraction Methods 0.000 title description 5
- 230000010287 polarization Effects 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 54
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 13
- 230000006835 compression Effects 0.000 claims description 10
- 238000007906 compression Methods 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 48
- 239000000203 mixture Substances 0.000 description 40
- 230000007704 transition Effects 0.000 description 37
- 239000013078 crystal Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101100537309 Arabidopsis thaliana TKPR1 gene Proteins 0.000 description 1
- 101150100920 KTI12 gene Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical group CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electroluminescent Light Sources (AREA)
- Polarising Elements (AREA)
Description
[先行技術文献]
[非特許文献]
[非特許文献1]Cassidy et al., “Polarization of the Output of InGaAsP Semiconductor Diode Lasers”, IEEE Journal of Quantum Electronics, Vol. 25, No. 6, June 1989, pp. 1156-1160.
[非特許文献2]Dang et al., “Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells for TM Mode Lasers”, Journal of Applied Physics, Vol. 108, 2010, 4 pages.
[非特許文献3]Jia et al., “Polarization of Edge Emission from III-Nitride Light Emitting Diodes of Emission Wavelength from 395 to 455nm”, Applied Physics Letters, 90, 2007, 3 pages.
[非特許文献4]Kolbe et al., “Optical Polarization Characteristics of Ultraviolet (In)(Al)GaN Multiple Quantum Well Light Emitting Diodes”, Applied Physics Letters, 97, 2010, 3 pages.
[非特許文献5]Shakya et al., “Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes”, Applied Physics Letters, 86, 2005, 3 pages.
[非特許文献6]Tanbun-Ek et al., “Measurements of the Polarization Dependent of the Gain of Strained Multiple Quantum Well InGaAs-InP Lasers”, IEEE Photonics Technology Letters, Vol. 3, No. 2, February 1991, pp. 103-105.
Claims (8)
- 中心波長λ、及び偏光度PDを有する光を発光するよう構成され、前記中心波長λ、及び前記偏光度PDは、200nm≦λ≦400nmに対してPD>0.006λ−1の条件を満たし、GaN、InAlN、AlGaN、InGaN及びInAlGaNのうちの少なくとも1つを含む発光領域と、
サファイア、GaN、AlN、AlGaN、InAlGaN、Si、及びSiCのうちの少なくとも1つを含む基板と、
を含む窒化物半導体発光素子。 - 前記基板はAlNを含み、格子定数abulk−AlNを有し、
前記発光領域は少なくとも1つのAlxGa1−xNの領域を含み、
前記少なくとも1つのAlxGa1−xNの領域は、面内格子定数astrainedを有し、astrained−abulk―AlN≦(λ(nm)−230)*0.0012Åの条件を満たす、請求項1に記載の発光素子。 - 前記AlxGa1−xNの領域は、2つのAlyGa1−yNの領域の間に配置され、y>x及びy>0.7+0.02*(245‐λ(nm))の条件を満たす、請求項2に記載の発光素子。
- 前記発光領域は、少なくとも1つのAlxGa1−xN層を含み、前記AlxGa1−xN層内の歪みεaは、不等式εa<−0.0079+0.00022*(λ(nm)−240nm)を満たす、請求項1〜3のいずれか1項に記載の発光素子。
- 請求項1〜4のいずれか1項に記載の発光素子を形成する方法であって、
第1のヘテロ構造を成長させるステップと、
第2のヘテロ構造を成長させるステップと、
発光領域が、前記第1のヘテロ構造と前記第2のヘテロ構造との間に配置されるように、III族窒化物発光領域を前記第1のヘテロ構造を覆って成長させるステップであって、前記発光領域は少なくとも1枚の圧縮歪層を含み、前記圧縮歪層内の圧縮歪みε α が、不等式εα<−0.00615+0.00023*(λ(nm)−230nm)を満たす、ステップと、を含む方法。 - 前記第1のヘテロ構造を成長させるステップでは、格子定数abulk−AlNを有するAlN基板の上で前記第1のヘテロ構造を成長させ、前記少なくとも1枚の圧縮歪層が、格子定数astrainedを有し、astrained−abulk−AlN≦(λ(nm)−230)*0.0012Åの条件を満たす、請求項5に記載の方法。
- 発光素子を形成する方法であって、
第1のヘテロ構造を成長させるステップと、
第2のヘテロ構造を成長させるステップと、
発光領域が、前記第1のヘテロ構造と前記第2のヘテロ構造との間に配置されるように、III族窒化物発光領域を前記第1のヘテロ構造を覆って成長させるステップであって、前記発光領域は少なくとも1枚の圧縮歪層を含み、前記圧縮歪層内の圧縮歪みε α が、不等式ε α <−0.00615+0.00023*(λ(nm)−230nm)を満たす、ステップと、を含み、
前記第1のヘテロ構造を成長させるステップでは、格子定数a bulk−AlN を有するAlN基板の上で前記第1のヘテロ構造を成長させ、前記少なくとも1枚の圧縮歪層が、格子定数a strained を有し、a strained −a bulk−AlN ≦(λ(nm)−230)*0.0012Åの条件を満たし、
AlN層を前記AlN基板の上でホモエピタキシャル成長させるステップであって、前記ホモエピタキシャル成長したAlN層が前記第1のヘテロ構造と前記AlN基板との間に配置されるようにするステップと、
前記AlN基板のうちの少なくともいくつかの部分を除去するステップと、をさらに含む、方法。 - 前記ホモエピタキシャル成長したAlN層のうちの少なくともいくつかの部分を除去するステップをさらに含む請求項7に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201113252691A | 2011-10-04 | 2011-10-04 | |
US13/252,691 | 2011-10-04 | ||
US13/328,783 US9252329B2 (en) | 2011-10-04 | 2011-12-16 | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
US13/328,783 | 2011-12-16 |
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JP2013080925A JP2013080925A (ja) | 2013-05-02 |
JP6046971B2 true JP6046971B2 (ja) | 2016-12-21 |
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US (2) | US9252329B2 (ja) |
EP (1) | EP2579339B1 (ja) |
JP (1) | JP6046971B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
CN101331249B (zh) | 2005-12-02 | 2012-12-19 | 晶体公司 | 掺杂的氮化铝晶体及其制造方法 |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
CN105951177B (zh) | 2010-06-30 | 2018-11-02 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US9252329B2 (en) | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
KR20140022136A (ko) * | 2012-08-13 | 2014-02-24 | 삼성전자주식회사 | 반도체 발광소자 |
JP6275817B2 (ja) * | 2013-03-15 | 2018-02-07 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 仮像電子及び光学電子装置に対する平面コンタクト |
US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
KR20150015760A (ko) * | 2013-08-01 | 2015-02-11 | 서울바이오시스 주식회사 | 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 |
US9660133B2 (en) | 2013-09-23 | 2017-05-23 | Sensor Electronic Technology, Inc. | Group III nitride heterostructure for optoelectronic device |
JP6252092B2 (ja) * | 2013-10-17 | 2017-12-27 | 日亜化学工業株式会社 | 窒化物半導体積層体及びそれを用いた発光素子 |
KR102116829B1 (ko) * | 2013-11-27 | 2020-06-01 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 및 그것을 제조하는 방법 |
JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
WO2015181656A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
CN104134730B (zh) * | 2014-08-19 | 2017-03-08 | 湘能华磊光电股份有限公司 | Mg掺杂电子阻挡层的外延片,生长方法及LED结构 |
JP6375890B2 (ja) | 2014-11-18 | 2018-08-22 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
US9444224B2 (en) * | 2014-12-08 | 2016-09-13 | Palo Alto Research Center Incorporated | Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer |
CN105261681B (zh) * | 2015-09-08 | 2019-02-22 | 安徽三安光电有限公司 | 一种半导体元件及其制备方法 |
JP6589987B2 (ja) | 2015-09-28 | 2019-10-16 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
CN114093994A (zh) | 2016-06-20 | 2022-02-25 | 苏州乐琻半导体有限公司 | 半导体器件以及半导体器件封装 |
CN115101641A (zh) * | 2016-06-24 | 2022-09-23 | 苏州立琻半导体有限公司 | 半导体器件和包括半导体器件的半导体器件封装 |
KR102552889B1 (ko) * | 2016-08-31 | 2023-07-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자, 반도체 소자 패키지, 및 반도체 소자 제조방법 |
US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
EP3511990B1 (en) | 2016-09-10 | 2023-12-13 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
CN115763652A (zh) | 2016-09-13 | 2023-03-07 | 苏州立琻半导体有限公司 | 半导体器件和包括该半导体器件的半导体器件封装 |
US10903395B2 (en) * | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
KR102390828B1 (ko) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
CN108321266A (zh) * | 2018-02-01 | 2018-07-24 | 映瑞光电科技(上海)有限公司 | 一种GaN基LED外延结构及其制备方法 |
US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US20220123177A1 (en) * | 2019-01-22 | 2022-04-21 | Dowa Electronics Materials Co., Ltd. | Method of producing reflective electrode for deep ultraviolet light-emitting element, method of producing deep ultraviolet light-emitting element, and deep ultraviolet light-emitting element |
JP2020167321A (ja) * | 2019-03-29 | 2020-10-08 | 旭化成株式会社 | 窒化物半導体発光素子 |
JP6698925B1 (ja) * | 2019-08-06 | 2020-05-27 | 日機装株式会社 | 窒化物半導体発光素子 |
JP7141425B2 (ja) * | 2020-04-28 | 2022-09-22 | 日機装株式会社 | 窒化物半導体発光素子 |
US20210343897A1 (en) * | 2020-05-04 | 2021-11-04 | Raxium, Inc. | Light emitting diodes with aluminum-containing layers integrated therein and associated methods |
WO2021236729A1 (en) | 2020-05-19 | 2021-11-25 | Raxium, Inc. | Combination of strain management layers for light emitting elements |
JP7041715B2 (ja) * | 2020-06-23 | 2022-03-24 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020096675A1 (en) * | 2000-11-15 | 2002-07-25 | Cho Alfred Yi | Intersubband optical devices that operate at wavelengths shorter than 1.7 um |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
JP4770580B2 (ja) * | 2006-05-15 | 2011-09-14 | 三菱化学株式会社 | 窒化物半導体素子の製造方法 |
US9437430B2 (en) * | 2007-01-26 | 2016-09-06 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
EP2037506B1 (en) | 2007-09-17 | 2019-07-24 | Palo Alto Research Center Incorporated | Semiconductor light emitting device with superlattices |
US8507941B2 (en) * | 2008-06-09 | 2013-08-13 | Nitek, Inc. | Ultraviolet light emitting diode with AC voltage operation |
JP5294167B2 (ja) * | 2008-08-28 | 2013-09-18 | 国立大学法人東北大学 | 窒化物半導体発光素子およびその製造方法 |
JP2012507874A (ja) | 2008-10-31 | 2012-03-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 無極性または半極性AlInNおよびAlInGaN合金に基づく光電子デバイス |
JP5641173B2 (ja) * | 2009-02-27 | 2014-12-17 | 独立行政法人理化学研究所 | 光半導体素子及びその製造方法 |
US8525198B2 (en) * | 2009-03-31 | 2013-09-03 | Xidian University | Ultraviolet light emitting diode devices and methods for fabricating the same |
US8699537B2 (en) * | 2009-10-29 | 2014-04-15 | Tarun Kumar Sharma | Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures |
WO2011104969A1 (ja) * | 2010-02-24 | 2011-09-01 | 独立行政法人理化学研究所 | 窒化物半導体多重量子障壁を有する発光素子及びその製造方法 |
US9252329B2 (en) | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
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JP7508023B2 (ja) | 2021-08-31 | 2024-07-01 | Jfeスチール株式会社 | 多電極サブマージアーク溶接用フラックス散布装置 |
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EP2579339B1 (en) | 2018-12-12 |
US10008629B2 (en) | 2018-06-26 |
US20130082237A1 (en) | 2013-04-04 |
EP2579339A2 (en) | 2013-04-10 |
EP2579339A3 (en) | 2014-05-21 |
US9252329B2 (en) | 2016-02-02 |
JP2013080925A (ja) | 2013-05-02 |
US20160233375A1 (en) | 2016-08-11 |
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