JP6259611B2 - 短波長発光素子のためのp側層 - Google Patents
短波長発光素子のためのp側層 Download PDFInfo
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- 239000000203 mixture Substances 0.000 claims description 89
- 229910002704 AlGaN Inorganic materials 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 125000004429 atom Chemical group 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 230000010287 polarization Effects 0.000 description 66
- 238000013461 design Methods 0.000 description 33
- 239000010408 film Substances 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 23
- 239000011777 magnesium Substances 0.000 description 20
- 238000012360 testing method Methods 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 230000005684 electric field Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000370 acceptor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000013459 approach Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000004047 hole gas Substances 0.000 description 3
- 230000002427 irreversible effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 230000006798 recombination Effects 0.000 description 2
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- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- -1 III-nitride Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Description
Claims (10)
- p側ヘテロ構造であって、xロー≦xハイ≦0.9のとき、p型ドーパントがドープされたAlxハイGa1−xハイNとp型ドーパントがドープされたAlxローGa1−xローNの交互層を有する短周期超格子(SPSL)を含み、前記SPSLの各層はAlGaNの約6バイレーヤ以下の膜厚を有している、p側ヘテロ構造と、
n側ヘテロ構造と、
前記n側ヘテロ構造と前記SPSLとの間に配置された光を発するように構成されている活性領域と、
を含む発光素子であって、
各バイレーヤは、AlGaNの原子の一層及びN原子の一層であり、0.25nmの厚さを有し、
前記交互層におけるxハイとxローの差は、前記SPSLの価電子帯電位に変調を生じさせ、
前記SPSLの価電子帯電位の変調は、少なくともp型ドーパントのアクセプタ準位エネルギである、
発光素子。 - 各AlxハイGa1−xハイNの層は膜厚Tハイを有し、各AlxローGa1−xローNの層は膜厚Tローを有し、TハイとTローの膜厚の範囲は約0.7nm〜約1.3nmである、請求項1に記載の発光素子。
- 前記SPSLの全体膜厚は約200nmより厚く約450nmより薄い、請求項1または2に記載の発光素子。
- 前記xハイ−xローが約0.25以上である、請求項1〜3のいずれか一項に記載の発光素子。
- 前記SPSLの平均Al組成が約0.60である、請求項1〜4のいずれか一項に記載の発光素子。
- xローが約0.44であり、xハイが約0.75である、請求項1〜5のいずれか一項に記載の発光素子。
- 前記SPSLの抵抗率は約400K〜約100Kの温度範囲にわたって約50Ω・cm未満だけ変化する、請求項1〜6のいずれか一項に記載の発光素子。
- 前記SPSLの抵抗率は室温において約10Ω・cm未満である、請求項1〜7のいずれか一項に記載の発光素子。
- 前記n側ヘテロ構造、活性領域、およびp側ヘテロ構造は、GaN系、AlN系、SiC系、サファイア系、Si系、GaAs系、ZnO系の一以上を含む基板、III族N系合金、およびIII族N系材料を含むテンプレートの少なくとも一つの上で成長する、請求項1〜8のいずれか一項に記載の発光素子。
- 前記n側ヘテロ構造、活性領域、およびp側ヘテロ構造は、バルクAlN基板上でエピタキシャルに成長する、請求項1〜8のいずれか一項に記載の発光素子。
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Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
US9401452B2 (en) | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
US9960315B2 (en) * | 2013-01-09 | 2018-05-01 | Sensor Electronic Technology, Inc. | Light emitting heterostructure with partially relaxed semiconductor layer |
WO2014110195A1 (en) * | 2013-01-09 | 2014-07-17 | Sensor Electronic Technology, Inc. | Light emitting heterostructure with partially relaxed semiconductor layer |
US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
US9647168B2 (en) | 2013-09-03 | 2017-05-09 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
US10804423B2 (en) | 2013-09-03 | 2020-10-13 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
US10903391B2 (en) * | 2013-09-03 | 2021-01-26 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
US9653631B2 (en) * | 2013-09-03 | 2017-05-16 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
WO2015181656A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
KR102333773B1 (ko) | 2014-05-27 | 2021-12-01 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 광전자 디바이스 |
JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
CN104134730B (zh) * | 2014-08-19 | 2017-03-08 | 湘能华磊光电股份有限公司 | Mg掺杂电子阻挡层的外延片,生长方法及LED结构 |
US9444224B2 (en) * | 2014-12-08 | 2016-09-13 | Palo Alto Research Center Incorporated | Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer |
JP6959915B2 (ja) | 2015-07-13 | 2021-11-05 | クラヨナノ エーエス | グラファイト基板上に成長させたナノワイヤ又はナノピラミッド |
DK3323152T3 (da) | 2015-07-13 | 2021-12-20 | Crayonano As | Nanowire-/nanopyramideformede lysdioder og fotodetektorer |
EP3544046A1 (en) | 2015-07-31 | 2019-09-25 | Crayonano AS | Processes for growing nanowires or nanopyramids |
JP6573076B2 (ja) * | 2016-02-01 | 2019-09-11 | パナソニック株式会社 | 紫外線発光素子 |
WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
KR102524303B1 (ko) | 2016-09-10 | 2023-04-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
CN115602765A (zh) | 2016-09-13 | 2023-01-13 | 苏州立琻半导体有限公司(Cn) | 半导体器件和包括该半导体器件的半导体器件封装 |
US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
KR102688666B1 (ko) * | 2017-01-20 | 2024-07-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN107180898B (zh) * | 2017-05-09 | 2019-05-17 | 天津三安光电有限公司 | 发光二极管 |
KR102390828B1 (ko) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
JP7228176B2 (ja) * | 2017-11-10 | 2023-02-24 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
EP3486939B1 (en) | 2017-11-20 | 2020-04-01 | IMEC vzw | Method for forming a semiconductor structure for a gallium nitride channel device |
WO2020012392A1 (en) * | 2018-07-13 | 2020-01-16 | Silanna UV Technologies Pte Ltd | Semiconductor-metal contacts with spontaneous and induced piezoelectric polarization |
US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
JP7262965B2 (ja) | 2018-10-17 | 2023-04-24 | スタンレー電気株式会社 | 半導体発光素子 |
JP7338166B2 (ja) * | 2019-02-25 | 2023-09-05 | 日本電信電話株式会社 | 半導体装置 |
US10950750B2 (en) * | 2019-03-06 | 2021-03-16 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
JP7512121B2 (ja) | 2020-08-05 | 2024-07-08 | パナソニックホールディングス株式会社 | 半導体レーザ素子 |
CN116581210B (zh) * | 2023-07-10 | 2023-09-19 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3374737B2 (ja) * | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6128535A (en) | 1997-12-05 | 2000-10-03 | Cardiac Pacemakers, Inc. | Automatic capture verification in multisite cardiac pacing |
KR100611352B1 (ko) * | 1998-03-12 | 2006-09-27 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
JP3551101B2 (ja) * | 1999-03-29 | 2004-08-04 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP3539896B2 (ja) * | 1999-06-10 | 2004-07-07 | 日本電信電話株式会社 | 半導体超格子を有する半導体装置 |
US6515313B1 (en) | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
US6535536B2 (en) * | 2000-04-10 | 2003-03-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element |
JP3631157B2 (ja) * | 2001-03-21 | 2005-03-23 | 日本電信電話株式会社 | 紫外発光ダイオード |
JP2004281553A (ja) | 2003-03-13 | 2004-10-07 | Nippon Telegr & Teleph Corp <Ntt> | 発光ダイオード |
KR100718129B1 (ko) * | 2005-06-03 | 2007-05-14 | 삼성전자주식회사 | Ⅲ-Ⅴ족 GaN계 화합물 반도체 소자 |
JP4705412B2 (ja) * | 2005-06-06 | 2011-06-22 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
KR100665364B1 (ko) * | 2005-12-28 | 2007-01-09 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
US7619238B2 (en) | 2006-02-04 | 2009-11-17 | Sensor Electronic Technology, Inc. | Heterostructure including light generating structure contained in potential well |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
US20090309127A1 (en) * | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US7856040B2 (en) * | 2008-09-24 | 2010-12-21 | Palo Alto Research Center Incorporated | Semiconductor light emitting devices with non-epitaxial upper cladding |
JP2010251712A (ja) * | 2009-03-26 | 2010-11-04 | Sony Corp | バイ・セクション型半導体レーザ素子及びその製造方法、並びに、バイ・セクション型半導体レーザ素子の駆動方法 |
CN102474077B (zh) * | 2009-07-31 | 2014-08-06 | 日亚化学工业株式会社 | 氮化物半导体激光二极管 |
CN102484142A (zh) | 2009-08-21 | 2012-05-30 | 加利福尼亚大学董事会 | 通过具有错配位错的部分或完全驰豫氮化铝铟镓层的半极性氮化物量子阱中的各向异性应变控制 |
US9368580B2 (en) * | 2009-12-04 | 2016-06-14 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
JP2011187580A (ja) * | 2010-03-05 | 2011-09-22 | Sony Corp | 自励発振型半導体レーザ素子及びその駆動方法 |
US8633468B2 (en) * | 2011-02-11 | 2014-01-21 | Sensor Electronic Technology, Inc. | Light emitting device with dislocation bending structure |
US10134948B2 (en) * | 2011-02-25 | 2018-11-20 | Sensor Electronic Technology, Inc. | Light emitting diode with polarization control |
JP5737111B2 (ja) * | 2011-03-30 | 2015-06-17 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
US8748919B2 (en) * | 2011-04-28 | 2014-06-10 | Palo Alto Research Center Incorporated | Ultraviolet light emitting device incorporating optically absorbing layers |
CN103650173A (zh) * | 2011-07-29 | 2014-03-19 | 三星电子株式会社 | 半导体发光器件 |
US9219189B2 (en) | 2012-09-14 | 2015-12-22 | Palo Alto Research Center Incorporated | Graded electron blocking layer |
US9401452B2 (en) | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
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