JP2008034850A - 超格子を有する半導体層構造 - Google Patents
超格子を有する半導体層構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 230000005693 optoelectronics Effects 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000012886 linear function Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 12
- 229910002601 GaN Inorganic materials 0.000 description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 239000000758 substrate Substances 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
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- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
【解決手段】第1のタイプの層の層厚及び第2のタイプの層の層厚が、活性層からの距離が増すとともに、層を追って増大する半導体層構造およびこのような半導体層構造を有するオプトエレクトロニクスデバイス。
【選択図】図1
Description
この量子層は二次元の量子井戸を形成するか又はより低い次元の数を有する構造的素子、例えば量子ワイヤ又は量子ドット又はこれらの構造の組合せを含むことができる。
更に、n−ドープされたAlGaNジャケット層4について超格子の使用も考えられる。n−ドープされた層は一般に比較的高い導電性であるために、この場合、高められた垂直方向の導電性の点であまり有利ではない。しかしながら、活性層6中で生じる歪みを低減できるという利点が生じる。特に側面で電流供給する場合に効果が発揮される他の利点は、超格子の高められた側方の電流伝導性(lateralen Stromleitfaehigkeit)に基づく。
Claims (12)
- 半導体層構造であって、
該半導体層構造は活性層(6)と超格子(9)を有しており、該超格子は、第1のタイプ(a)と少なくとも1つの第2のタイプ(b)の積み重ねられた層(9a,9b)から成り、
・前記第1のタイプ(a)と少なくとも1つの第2のタイプ(b)の層(9a,9b)はIII−V族化合物半導体であり、
・超格子(9)内の異なるタイプの隣接する層は、少なくとも1つの元素の組成において異なっており、
・前記層は所定の層厚を有しており、
・前記第1のタイプ(a)の層(9a)の層厚及び第2のタイプ(b)の層(9b)の層厚は、前記活性層(6)からの距離が増すとともに、層を追って増大する、
ことを特徴とする半導体層構造。 - 前記超格子は、交互に積み重ねられたInxAlyGa1-x-yN層及びInwAlzGa1-w-zN層を有しており、式中0≦x、y、w、z≦1及びx+y≦1およびw+z≦1である、請求項1記載の半導体層構造。
- 前記超格子は、交互に積み重ねられたInxAlyGa1-x-yP層及びInwAlzGa1-w-zP層を有しており、式中0≦x、y、w、z≦1であるか、または交互に積層されたInxAlyGa1-x-yAs層及びInwAlzGa1-w-zAs層を有しており、式中0≦x、y、w、z≦1及びx+y≦1及びw+z≦1である、請求項1記載の半導体層構造。
- 前記超格子(9)の個々の層には半導体層構造内での垂直位置(z)が割り当てられており、層の層厚は半導体層構造内での自身の垂直位置(z)に依存している、請求項1から3までのいずれか1項記載の半導体層構造。
- 前記垂直位置(z)に対する層の層厚の依存性は、超格子(9)の全ての層に対して共通の関数によって設定されている、請求項4記載の半導体層構造。
- 前記垂直位置(z)に対する層の層厚の依存性は、第1のタイプ(a)の層に対しては第1の関数によって設定されており、少なくとも1つの第2のタイプ(b)の層に対しては少なくとも1つの第2の関数によって定められている、請求項4記載の半導体層構造。
- 前記第1の関数および/または少なくとも1つの第2の関数および/または共通の関数は、階段関数または単調増加関数/減少関数または一次関数または放物線関数または指数関数または対数関数または周期関数またはこれらの関数を重ね合わせたものであるか、またはこれらの関数の一部を有している、請求項5または6記載の半導体層構造。
- 前記超格子(9)内で、少なくとも同じタイプの層(9a、9b)はその組成において異なっている、請求項1から7までのいずれか1項記載の半導体層構造。
- 少なくとも同じタイプの層(9a、9b)における材料成分の含有量は、前記活性層(6)からの距離が増すとともに層を追って上昇する、請求項8記載の半導体層構造。
- 請求項1から9までのいずれか1項に記載された半導体層構造を有している、
ことを特徴とするオプトエレクトロニクスデバイス。 - 発光ダイオードである、請求項10記載のオプトエレクトロニクスデバイス。
- レーザーダイオードである、請求項10記載のオプトエレクトロニクスデバイス。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102006034822 | 2006-07-27 | ||
DE102006034822.2 | 2006-07-27 | ||
DE102006046228A DE102006046228A1 (de) | 2006-07-27 | 2006-09-29 | Halbleiter-Schichtstruktur mit Übergitter |
DE102006046228.9 | 2006-09-29 |
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JP2008034850A true JP2008034850A (ja) | 2008-02-14 |
JP2008034850A5 JP2008034850A5 (ja) | 2011-06-23 |
JP5430829B2 JP5430829B2 (ja) | 2014-03-05 |
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JP2007195431A Active JP5430829B2 (ja) | 2006-07-27 | 2007-07-27 | 超格子を有する半導体層構造およびオプトエレクトロニクスデバイス |
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US (1) | US8022392B2 (ja) |
EP (1) | EP1883119B1 (ja) |
JP (1) | JP5430829B2 (ja) |
PL (1) | PL1883119T3 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7822089B2 (en) | 2006-07-27 | 2010-10-26 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with superlattice |
US7893424B2 (en) | 2006-07-27 | 2011-02-22 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with superlattice |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060039498A1 (en) * | 2004-08-19 | 2006-02-23 | De Figueiredo Rui J P | Pre-distorter for orthogonal frequency division multiplexing systems and method of operating the same |
WO2011037251A1 (ja) * | 2009-09-28 | 2011-03-31 | 株式会社トクヤマ | 積層体の製造方法 |
KR102042181B1 (ko) * | 2012-10-22 | 2019-11-07 | 엘지이노텍 주식회사 | 발광소자 |
FR3028670B1 (fr) * | 2014-11-18 | 2017-12-22 | Commissariat Energie Atomique | Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794829A (ja) * | 1993-04-05 | 1995-04-07 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JP2002057410A (ja) * | 2000-05-29 | 2002-02-22 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003318495A (ja) * | 2002-04-23 | 2003-11-07 | Mitsubishi Electric Corp | 傾斜状多重量子バリアを用いた半導体発光素子 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145686A (ja) | 1984-01-09 | 1985-08-01 | Nec Corp | 半導体レ−ザ |
US4882734A (en) | 1988-03-09 | 1989-11-21 | Xerox Corporation | Quantum well heterostructure lasers with low current density threshold and higher TO values |
US4839899A (en) * | 1988-03-09 | 1989-06-13 | Xerox Corporation | Wavelength tuning of multiple quantum well (MQW) heterostructure lasers |
JPH01241192A (ja) | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | 半導体装置 |
US4961197A (en) | 1988-09-07 | 1990-10-02 | Hitachi, Ltd. | Semiconductor laser device |
CA1299719C (en) | 1989-01-13 | 1992-04-28 | Hui Chun Liu | Semiconductor superlattice infrared source |
US5060028A (en) | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
US4984242A (en) | 1989-09-18 | 1991-01-08 | Spectra Diode Laboratories, Inc. | GaAs/AlGaAs heterostructure laser containing indium |
US5319657A (en) | 1991-10-08 | 1994-06-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof |
US5198682A (en) | 1991-11-12 | 1993-03-30 | Hughes Aircraft Company | Multiple quantum well superlattice infrared detector with graded conductive band |
US5395793A (en) | 1993-12-23 | 1995-03-07 | National Research Council Of Canada | Method of bandgap tuning of semiconductor quantum well structures |
US5570386A (en) | 1994-04-04 | 1996-10-29 | Lucent Technologies Inc. | Semiconductor laser |
US5497012A (en) | 1994-06-15 | 1996-03-05 | Hewlett-Packard Company | Unipolar band minima devices |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5588015A (en) | 1995-08-22 | 1996-12-24 | University Of Houston | Light emitting devices based on interband transitions in type-II quantum well heterostructures |
JPH1022524A (ja) * | 1996-07-02 | 1998-01-23 | Omron Corp | 半導体発光素子 |
US5936989A (en) | 1997-04-29 | 1999-08-10 | Lucent Technologies, Inc. | Quantum cascade laser |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
EP1017113B1 (en) | 1997-01-09 | 2012-08-22 | Nichia Corporation | Nitride semiconductor device |
JP3014339B2 (ja) * | 1997-04-25 | 2000-02-28 | カナレ電気株式会社 | 量子波干渉層を有した半導体素子 |
JP3642157B2 (ja) | 1997-05-26 | 2005-04-27 | ソニー株式会社 | p型III族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ |
CN1142598C (zh) | 1997-07-25 | 2004-03-17 | 日亚化学工业株式会社 | 氮化物半导体发光器件 |
JPH1168158A (ja) | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
JP3468082B2 (ja) | 1998-02-26 | 2003-11-17 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP2000091708A (ja) * | 1998-09-14 | 2000-03-31 | Toshiba Corp | 半導体発光素子 |
JP2000244070A (ja) * | 1999-02-19 | 2000-09-08 | Sony Corp | 半導体装置および半導体発光素子 |
CN1347581A (zh) * | 1999-03-26 | 2002-05-01 | 松下电器产业株式会社 | 带有应变补偿层的半导体结构及其制备方法 |
GB9913950D0 (en) | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
US6441393B2 (en) | 1999-11-17 | 2002-08-27 | Lumileds Lighting U.S., Llc | Semiconductor devices with selectively doped III-V nitride layers |
JP2001168385A (ja) | 1999-12-06 | 2001-06-22 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体発光素子 |
US6535536B2 (en) | 2000-04-10 | 2003-03-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element |
US6556604B1 (en) * | 2000-11-08 | 2003-04-29 | Lucent Technologies Inc. | Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters |
JP3453558B2 (ja) | 2000-12-25 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
CN1254869C (zh) | 2001-03-28 | 2006-05-03 | 日亚化学工业株式会社 | 氮化物半导体元件 |
US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6649942B2 (en) | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
US6630692B2 (en) | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US7692182B2 (en) | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
JP4057802B2 (ja) | 2001-09-05 | 2008-03-05 | 株式会社日立製作所 | 半導体光素子 |
US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
US7919791B2 (en) | 2002-03-25 | 2011-04-05 | Cree, Inc. | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same |
JP4221697B2 (ja) | 2002-06-17 | 2009-02-12 | 日本電気株式会社 | 半導体装置 |
US20030235224A1 (en) | 2002-06-19 | 2003-12-25 | Ohlander Ulf Roald | Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers |
GB2396054B (en) | 2002-11-20 | 2006-01-11 | Intense Photonics Ltd | Semiconductor optical device with beam focusing |
GB0306279D0 (en) | 2003-03-19 | 2003-04-23 | Bookham Technology Plc | High power semiconductor laser with large optical superlattice waveguide |
WO2005006506A1 (ja) * | 2003-07-10 | 2005-01-20 | Nichia Corporation | 窒化物半導体レーザ素子及びそれを用いたレーザー装置 |
KR100580623B1 (ko) | 2003-08-04 | 2006-05-16 | 삼성전자주식회사 | 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법 |
TWI228320B (en) | 2003-09-09 | 2005-02-21 | Ind Tech Res Inst | An avalanche photo-detector(APD) with high saturation power, high gain-bandwidth product |
JP3909605B2 (ja) | 2003-09-25 | 2007-04-25 | 松下電器産業株式会社 | 窒化物半導体素子およびその製造方法 |
DE102004009531B4 (de) | 2004-02-20 | 2007-03-01 | Forschungszentrum Rossendorf E.V. | Quanten-Kaskaden-Laser-Struktur |
US7294868B2 (en) | 2004-06-25 | 2007-11-13 | Finisar Corporation | Super lattice tunnel junctions |
KR100662191B1 (ko) | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US7885306B2 (en) | 2006-06-30 | 2011-02-08 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser chip |
EP1883140B1 (de) | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
EP1883141B1 (de) | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
-
2007
- 2007-07-13 PL PL07013823T patent/PL1883119T3/pl unknown
- 2007-07-13 EP EP07013823.5A patent/EP1883119B1/de active Active
- 2007-07-20 US US11/780,516 patent/US8022392B2/en active Active
- 2007-07-27 JP JP2007195431A patent/JP5430829B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794829A (ja) * | 1993-04-05 | 1995-04-07 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JP2002057410A (ja) * | 2000-05-29 | 2002-02-22 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003318495A (ja) * | 2002-04-23 | 2003-11-07 | Mitsubishi Electric Corp | 傾斜状多重量子バリアを用いた半導体発光素子 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7822089B2 (en) | 2006-07-27 | 2010-10-26 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with superlattice |
US7893424B2 (en) | 2006-07-27 | 2011-02-22 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with superlattice |
US20110168977A1 (en) * | 2006-07-27 | 2011-07-14 | Osram Opto Semiconductors Gmbh, A Germany Corporation | Semiconductor layer structure with superlattice |
US8471240B2 (en) | 2006-07-27 | 2013-06-25 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with superlattice |
Also Published As
Publication number | Publication date |
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US8022392B2 (en) | 2011-09-20 |
EP1883119A3 (de) | 2008-11-26 |
EP1883119B1 (de) | 2015-11-04 |
US20080054252A1 (en) | 2008-03-06 |
JP5430829B2 (ja) | 2014-03-05 |
PL1883119T3 (pl) | 2016-04-29 |
EP1883119A2 (de) | 2008-01-30 |
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