JP4920298B2 - 半導体発光デバイスおよび半導体デバイスの製造方法 - Google Patents
半導体発光デバイスおよび半導体デバイスの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 155
- 238000000034 method Methods 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 150000004767 nitrides Chemical class 0.000 claims description 118
- 238000000137 annealing Methods 0.000 claims description 98
- 229910052782 aluminium Inorganic materials 0.000 claims description 86
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 64
- 229910002704 AlGaN Inorganic materials 0.000 claims description 60
- 229910052738 indium Inorganic materials 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 31
- 229910052733 gallium Inorganic materials 0.000 claims description 25
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 152
- 230000004888 barrier function Effects 0.000 description 51
- 239000000758 substrate Substances 0.000 description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 238000005253 cladding Methods 0.000 description 19
- 238000011066 ex-situ storage Methods 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 14
- 238000011065 in-situ storage Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001451 molecular beam epitaxy Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Description
シリコンは、適切なドーパントである。
したがって、図6の層構造の層26および27に対して、約500℃から約1050℃までの範囲内の成長温度を用いることは、用いる成長技術にかかわらず良好な材料品質をもたらすはずである。例外的に、InGaNやAlGaInN等のようなインジウム含有材料の成長のための概算の温度上限は、850℃の温度である。これは、850℃より著しく大きな温度ではインジウムを材料に含ませることが困難であるためである。インジウムを含む層の成長については、例えば層27がInGaN層である場合、あるいはアルミニウム含有窒化物層26がAlGaInN層である場合には、約500℃から約850℃までの範囲内の成長温度を用いることが、用いる成長技術にかかわらず良好な材料品質をもたらすはずである。
27 InxGa1−xN層(GaN層)
28 電子ガス領域
29 半導体層構造
Claims (32)
- 窒化物半導体デバイスを製造する方法であって、
InxGa1−xN(0≦x≦1)層を成長させるステップと、
上記InxGa1−xN層の上にアルミニウム含有窒化物半導体層を500℃以上、かつ、アルミニウム含有窒化物半導体層をアニールする温度より低い温度の成長温度で成長させるステップと、
上記アルミニウム含有窒化物半導体層を800℃以上、かつ、1000℃以下の温度で上記アニールするステップとを含み、
上記アルミニウム含有窒化物半導体層の厚さが、上記InxGa1−xN層と上記アルミニウム含有窒化物半導体層との間の界面に電子ガス領域を形成させるような厚みであり、
上記電子ガス領域内には、使用時に、300Kの温度で6×10 13 cm −2 〜1×10 14 cm −2 の範囲のシートキャリア濃度を持つ電子ガスが発生する窒化物半導体デバイスの製造方法。 - 上記アルミニウム含有窒化物半導体層を750℃以下の成長温度で成長させる請求項1記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層は、AlyGazIn1−y−zN(ここで0<y≦1かつ0≦z≦1)層である請求項1または2に記載の窒化物半導体デバイスの製造方法。
- 上記AlyGazIn1−y−zN層は、0<y<0.3を満たす請求項3記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層が、AlyGa1−yN層である請求項1〜4のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層の厚さが、5nm以上である請求項1〜5のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層の厚さが、50nm未満である請求項6記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層が、GaNの層である請求項1〜7のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層の厚さが、20nm以上である請求項1〜8のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層が、3μm未満の厚さを持つ請求項9記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層が、意図的にドープされていない請求項1〜10のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層が、ドープされたn型である請求項1〜11のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層が、意図的にドープされていない請求項1〜12のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層が、ドープされたn型である請求項1〜12のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層をInxGa1−xN層上に直接成長させるステップを含む請求項1〜14のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記InxGa1−xN層および上記アルミニウム含有窒化物半導体層を成長室内で成長させるステップを含み、かつ、
上記アルミニウム含有窒化物半導体層を成長室内でアニールするステップを含む請求項1〜15のいずれか1項に記載の窒化物半導体デバイスの製造方法。 - 上記アルミニウム含有窒化物半導体層の上に1つまたはそれ以上の他の(Al,Ga,In)N層を成長させるステップを含む請求項1〜16のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記アルミニウム含有窒化物半導体層をアニールするステップの継続時間が、10分間以内である請求項1〜17のいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 窒化物材料系で作製された半導体発光デバイスであって、
発光のための活性領域と、
上記活性領域のn型側に配置された電子ガス領域とを含み、
上記電子ガス領域は、使用時に、300Kの温度で6×1013cm−2 〜1×10 14 cm −2 の範囲のシート電子密度を持つ電子ガスを含み、
上記活性領域のn型側に配置された第1層と、上記第1層に近接するように配置された第2層とを含み、上記第2層は、上記第1層とは異なる組成を持ち、上記第1層と上記第2層との間の界面に上記電子ガス領域が形成されており、上記第2層は、上記電子ガス領域と上記活性領域との間にあり、
上記第1層が、InGaN層であり、
上記第2層が、アルミニウムを含む窒化物層である半導体発光デバイス。 - 上記第1層が、上記第2層に直接隣接するように配置されている請求項19に記載の半導体発光デバイス。
- 上記電子ガス領域が、使用時に2次元電子ガスを含むことを特徴とする請求項19または20に記載の半導体発光デバイス。
- 上記電子ガス領域が、使用時に3次元電子ガスを含む請求項19、20または21に記載の半導体発光デバイス。
- 上記第2層が、AlGaN層である請求項19から22までのいずれか1項に記載の半導体発光デバイス。
- 上記第1層が、意図的にドープされていない、請求項19から23までのいずれか1項に記載の半導体発光デバイス。
- 上記第1層が、ドープされたn型である、請求項19から23までのいずれか1項に記載の半導体発光デバイス。
- 上記第2層が、意図的にドープされていない、請求項19から25までのいずれか1項に記載の半導体発光デバイス。
- 上記第2層が、ドープされたn型である、請求項19から25までのいずれか1項に記載の半導体発光デバイス。
- 上記半導体発光デバイスが、発光ダイオードである請求項19から27までのいずれか1項に記載の半導体発光デバイス。
- 上記半導体発光デバイスが、半導体レーザーデバイスである請求項19から27までのいずれか1項に記載の半導体発光デバイス。
- 上記窒化物半導体デバイスが、発光デバイスである請求項1から18までのいずれか1項に記載の窒化物半導体デバイスの製造方法。
- 上記窒化物半導体デバイスが、発光ダイオードである請求項30記載の窒化物半導体デバイスの製造方法。
- 上記窒化物半導体デバイスが、半導体レーザーデバイスである請求項30記載の窒化物半導体デバイスの製造方法。
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GB0508557.6 | 2005-04-28 | ||
GB0508556A GB2425652A (en) | 2005-04-28 | 2005-04-28 | A semiconductor light-emitting device |
GB0508556.8 | 2005-04-28 | ||
GB0508557A GB2425653A (en) | 2005-04-28 | 2005-04-28 | Manufacture of group III-nitride semiconductor |
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US20080078439A1 (en) * | 2006-06-23 | 2008-04-03 | Michael Grundmann | Polarization-induced tunnel junction |
KR100809226B1 (ko) * | 2006-09-29 | 2008-02-29 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 제조방법 |
GB2456756A (en) | 2008-01-16 | 2009-07-29 | Sharp Kk | AlInGaN Light-Emitting devices |
JP2009288145A (ja) * | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | 薄膜密着強度の評価方法および評価装置 |
GB2460666A (en) * | 2008-06-04 | 2009-12-09 | Sharp Kk | Exciton spin control in AlGaInN quantum dots |
KR101479623B1 (ko) * | 2008-07-22 | 2015-01-08 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
US8159004B2 (en) * | 2008-08-26 | 2012-04-17 | Sanken Electric Co., Ltd. | Compound semiconductor device having dopant concentration gradient |
KR101549811B1 (ko) * | 2009-01-09 | 2015-09-04 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
WO2011084478A1 (en) * | 2009-12-15 | 2011-07-14 | Lehigh University | Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer |
KR101667925B1 (ko) * | 2010-05-24 | 2016-10-20 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9178108B2 (en) * | 2010-05-24 | 2015-11-03 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
JP2013008803A (ja) * | 2011-06-23 | 2013-01-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子の製造方法 |
DE102011116232B4 (de) * | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
CN105895526B (zh) * | 2016-04-26 | 2019-02-01 | 中国科学院微电子研究所 | 一种GaN基功率电子器件及其制备方法 |
JP6689244B2 (ja) * | 2017-11-10 | 2020-04-28 | 日機装株式会社 | 半導体発光素子の製造方法 |
GB201816455D0 (en) * | 2018-10-09 | 2018-11-28 | Univ Sheffield | LED Arrays |
CN114214663A (zh) * | 2022-01-06 | 2022-03-22 | 武汉工程大学 | 一种氮空位修饰的氮化镍电催化材料及其制备方法与应用 |
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US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US6541797B1 (en) * | 1997-12-04 | 2003-04-01 | Showa Denko K. K. | Group-III nitride semiconductor light-emitting device |
JP3276911B2 (ja) * | 1997-12-04 | 2002-04-22 | 昭和電工株式会社 | Iii族窒化物半導体発光素子 |
GB9912583D0 (en) * | 1999-05-28 | 1999-07-28 | Arima Optoelectronics Corp | A light emitting diode having a two well system with asymmetric tunneling |
US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
CN1316782A (zh) | 2000-04-05 | 2001-10-10 | 中国科学院半导体研究所 | 一种氮化物半导体器件 |
WO2003032397A2 (en) | 2001-07-24 | 2003-04-17 | Cree, Inc. | INSULTING GATE AlGaN/GaN HEMT |
JP3569807B2 (ja) * | 2002-01-21 | 2004-09-29 | 松下電器産業株式会社 | 窒化物半導体素子の製造方法 |
JP2002270892A (ja) | 2002-03-11 | 2002-09-20 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
US6888170B2 (en) * | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
JP2004200671A (ja) * | 2002-12-03 | 2004-07-15 | Nec Corp | 量子井戸構造を有する半導体光素子およびその製造方法 |
AU2003299899A1 (en) | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
WO2004107406A2 (en) | 2003-05-23 | 2004-12-09 | Board Of Regents, The University Of Texas System | Semiconductor electronic devices and methods |
JP2004080047A (ja) | 2003-10-06 | 2004-03-11 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体の製造方法 |
JP2005116725A (ja) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
GB2407702A (en) * | 2003-10-28 | 2005-05-04 | Sharp Kk | A semiconductor light-emitting device |
JP2005159310A (ja) * | 2003-10-30 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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