CN101496187A - Led半导体本体 - Google Patents

Led半导体本体 Download PDF

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Publication number
CN101496187A
CN101496187A CNA2007800285790A CN200780028579A CN101496187A CN 101496187 A CN101496187 A CN 101496187A CN A2007800285790 A CNA2007800285790 A CN A2007800285790A CN 200780028579 A CN200780028579 A CN 200780028579A CN 101496187 A CN101496187 A CN 101496187A
Authority
CN
China
Prior art keywords
layer
quantum
semiconductor body
strain
led semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800285790A
Other languages
English (en)
Chinese (zh)
Inventor
G·格罗宁格
C·琼
P·海德博恩
A·贝雷斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101496187A publication Critical patent/CN101496187A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
CNA2007800285790A 2006-07-31 2007-07-27 Led半导体本体 Pending CN101496187A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006035627.6 2006-07-31
DE102006035627A DE102006035627A1 (de) 2006-07-31 2006-07-31 LED-Halbleiterkörper

Publications (1)

Publication Number Publication Date
CN101496187A true CN101496187A (zh) 2009-07-29

Family

ID=38739481

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800285790A Pending CN101496187A (zh) 2006-07-31 2007-07-27 Led半导体本体

Country Status (8)

Country Link
US (1) US8405065B2 (enExample)
EP (1) EP2047527B1 (enExample)
JP (1) JP2009545865A (enExample)
KR (1) KR20090033897A (enExample)
CN (1) CN101496187A (enExample)
DE (1) DE102006035627A1 (enExample)
TW (1) TWI370557B (enExample)
WO (1) WO2008014772A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104584242A (zh) * 2012-08-23 2015-04-29 欧司朗光电半导体有限公司 光电子半导体本体和光电子半导体芯片
CN105870281A (zh) * 2015-02-10 2016-08-17 晶元光电股份有限公司 发光元件
CN107180901A (zh) * 2016-03-10 2017-09-19 晶元光电股份有限公司 发光元件
CN112838150A (zh) * 2020-12-31 2021-05-25 武汉光迅科技股份有限公司 发光二极管及其形成方法
CN113939921A (zh) * 2019-06-06 2022-01-14 欧司朗光电半导体有限公司 具有辐射转换元件的半导体器件和用于制造辐射转换元件的方法

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CN102307920B (zh) 2009-02-05 2014-09-03 阿科玛股份有限公司 用聚醚酮酮上胶的纤维
JP5684501B2 (ja) * 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102015109796A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102015119817A1 (de) * 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Halbleiterbauelement
KR102333489B1 (ko) * 2019-10-01 2021-12-01 에피스타 코포레이션 발광 디바이스
US12278304B2 (en) * 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode

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JPH09162482A (ja) 1995-12-08 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
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JPH11150330A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
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DE102006039369A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104584242B (zh) * 2012-08-23 2017-03-22 欧司朗光电半导体有限公司 光电子半导体本体和光电子半导体芯片
CN104584242A (zh) * 2012-08-23 2015-04-29 欧司朗光电半导体有限公司 光电子半导体本体和光电子半导体芯片
CN115172543A (zh) * 2015-02-10 2022-10-11 晶元光电股份有限公司 发光元件
CN105870281A (zh) * 2015-02-10 2016-08-17 晶元光电股份有限公司 发光元件
US10263137B2 (en) 2015-02-10 2019-04-16 Epistar Corporation Light-emitting device
US10475950B2 (en) 2015-02-10 2019-11-12 Epistar Corporation Light-emitting device
CN105870281B (zh) * 2015-02-10 2020-09-25 晶元光电股份有限公司 发光元件
CN107180901A (zh) * 2016-03-10 2017-09-19 晶元光电股份有限公司 发光元件
CN113939921A (zh) * 2019-06-06 2022-01-14 欧司朗光电半导体有限公司 具有辐射转换元件的半导体器件和用于制造辐射转换元件的方法
CN113939921B (zh) * 2019-06-06 2025-01-14 欧司朗光电半导体有限公司 具有辐射转换元件的半导体器件和用于制造辐射转换元件的方法
US12284849B2 (en) 2019-06-06 2025-04-22 Osram Opto Semiconductors Gmbh Semiconductor component with radiation conversion element, and method for producing radiation conversion elements
CN112838150B (zh) * 2020-12-31 2022-05-13 武汉光迅科技股份有限公司 发光二极管及其形成方法
CN112838150A (zh) * 2020-12-31 2021-05-25 武汉光迅科技股份有限公司 发光二极管及其形成方法

Also Published As

Publication number Publication date
EP2047527B1 (de) 2017-11-22
US20090302307A1 (en) 2009-12-10
EP2047527A1 (de) 2009-04-15
US8405065B2 (en) 2013-03-26
TW200810159A (en) 2008-02-16
WO2008014772A1 (de) 2008-02-07
KR20090033897A (ko) 2009-04-06
JP2009545865A (ja) 2009-12-24
DE102006035627A1 (de) 2008-02-07
TWI370557B (en) 2012-08-11

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Open date: 20090729