JP2009545865A - Ｌｅｄ半導体基体 - Google Patents

Ｌｅｄ半導体基体 Download PDF

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Publication number
JP2009545865A
JP2009545865A JP2009522085A JP2009522085A JP2009545865A JP 2009545865 A JP2009545865 A JP 2009545865A JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009522085 A JP2009522085 A JP 2009522085A JP 2009545865 A JP2009545865 A JP 2009545865A
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JP
Japan
Prior art keywords
layer
quantum
semiconductor substrate
led semiconductor
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009522085A
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English (en)
Japanese (ja)
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JP2009545865A5 (enExample
Inventor
グレニンガー ギュンター
ユング クリスティアン
ハイトボルン ペーター
ベーレス アレクサンダー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2009545865A publication Critical patent/JP2009545865A/ja
Publication of JP2009545865A5 publication Critical patent/JP2009545865A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
JP2009522085A 2006-07-31 2007-07-27 Ｌｅｄ半導体基体 Pending JP2009545865A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006035627A DE102006035627A1 (de) 2006-07-31 2006-07-31 LED-Halbleiterkörper
PCT/DE2007/001349 WO2008014772A1 (de) 2006-07-31 2007-07-27 Led-halbleiterkörper

Publications (2)

Publication Number Publication Date
JP2009545865A true JP2009545865A (ja) 2009-12-24
JP2009545865A5 JP2009545865A5 (enExample) 2011-06-16

Family

ID=38739481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009522085A Pending JP2009545865A (ja) 2006-07-31 2007-07-27 Ｌｅｄ半導体基体

Country Status (8)

Country Link
US (1) US8405065B2 (enExample)
EP (1) EP2047527B1 (enExample)
JP (1) JP2009545865A (enExample)
KR (1) KR20090033897A (enExample)
CN (1) CN101496187A (enExample)
DE (1) DE102006035627A1 (enExample)
TW (1) TWI370557B (enExample)
WO (1) WO2008014772A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287369B2 (en) 2012-03-08 2016-03-15 Kabushiki Kaisha Toshiba Nitride semiconductor element and nitride semiconductor wafer

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ES2578752T3 (es) 2009-02-05 2016-08-01 Arkema Inc. Fibras aprestadas con poliétercetonacetonas
JP5684501B2 (ja) * 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5801542B2 (ja) 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
DE102012107795B4 (de) * 2012-08-23 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
US9508891B2 (en) * 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US9306115B1 (en) * 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102015109796A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102015119817A1 (de) 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Halbleiterbauelement
US9859470B2 (en) * 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
KR102333489B1 (ko) * 2019-10-01 2021-12-01 에피스타 코포레이션 발광 디바이스
CN112838150B (zh) * 2020-12-31 2022-05-13 武汉光迅科技股份有限公司 发光二极管及其形成方法
US12278304B2 (en) * 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode

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JPH09162482A (ja) * 1995-12-08 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
JP2005109124A (ja) * 2003-09-30 2005-04-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2005175462A (ja) * 2003-11-21 2005-06-30 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2006120884A (ja) * 2004-10-22 2006-05-11 Ricoh Co Ltd 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム
JP2006196880A (ja) * 2004-12-17 2006-07-27 Matsushita Electric Ind Co Ltd 光半導体装置及びその製造方法
JP2007012688A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体発光素子

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JPH11274635A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体発光装置
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JP2004296634A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
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JP4224041B2 (ja) * 2004-08-26 2009-02-12 シャープ株式会社 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム
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DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
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JPH09162482A (ja) * 1995-12-08 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
JP2005109124A (ja) * 2003-09-30 2005-04-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2005175462A (ja) * 2003-11-21 2005-06-30 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2006120884A (ja) * 2004-10-22 2006-05-11 Ricoh Co Ltd 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム
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JP2007012688A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287369B2 (en) 2012-03-08 2016-03-15 Kabushiki Kaisha Toshiba Nitride semiconductor element and nitride semiconductor wafer
US9508804B2 (en) 2012-03-08 2016-11-29 Kabushiki Kaisha Toshiba Nitride semiconductor element and nitride semiconductor wafer

Also Published As

Publication number Publication date
US20090302307A1 (en) 2009-12-10
TW200810159A (en) 2008-02-16
EP2047527A1 (de) 2009-04-15
WO2008014772A1 (de) 2008-02-07
TWI370557B (en) 2012-08-11
CN101496187A (zh) 2009-07-29
EP2047527B1 (de) 2017-11-22
DE102006035627A1 (de) 2008-02-07
US8405065B2 (en) 2013-03-26
KR20090033897A (ko) 2009-04-06

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