KR20090033897A - Ｌｅｄ 반도체 몸체 - Google Patents

Ｌｅｄ 반도체 몸체 Download PDF

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Publication number
KR20090033897A
KR20090033897A KR1020097003151A KR20097003151A KR20090033897A KR 20090033897 A KR20090033897 A KR 20090033897A KR 1020097003151 A KR1020097003151 A KR 1020097003151A KR 20097003151 A KR20097003151 A KR 20097003151A KR 20090033897 A KR20090033897 A KR 20090033897A
Authority
KR
South Korea
Prior art keywords
layer
quantum
semiconductor body
barrier layer
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097003151A
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English (en)
Korean (ko)
Inventor
건터 그뢰닌거
크리스찬 정
피터 헤이드본
알렉산더 베흐레스
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20090033897A publication Critical patent/KR20090033897A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
KR1020097003151A 2006-07-31 2007-07-27 Ｌｅｄ 반도체 몸체 Withdrawn KR20090033897A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006035627.6 2006-07-31
DE102006035627A DE102006035627A1 (de) 2006-07-31 2006-07-31 LED-Halbleiterkörper

Publications (1)

Publication Number Publication Date
KR20090033897A true KR20090033897A (ko) 2009-04-06

Family

ID=38739481

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097003151A Withdrawn KR20090033897A (ko) 2006-07-31 2007-07-27 Ｌｅｄ 반도체 몸체

Country Status (8)

Country Link
US (1) US8405065B2 (enExample)
EP (1) EP2047527B1 (enExample)
JP (1) JP2009545865A (enExample)
KR (1) KR20090033897A (enExample)
CN (1) CN101496187A (enExample)
DE (1) DE102006035627A1 (enExample)
TW (1) TWI370557B (enExample)
WO (1) WO2008014772A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200070168A (ko) * 2019-10-01 2020-06-17 에피스타 코포레이션 발광 디바이스

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JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
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US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US9306115B1 (en) 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
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US9859470B2 (en) * 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN112838150B (zh) * 2020-12-31 2022-05-13 武汉光迅科技股份有限公司 发光二极管及其形成方法
US12278304B2 (en) * 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200070168A (ko) * 2019-10-01 2020-06-17 에피스타 코포레이션 발광 디바이스

Also Published As

Publication number Publication date
CN101496187A (zh) 2009-07-29
EP2047527B1 (de) 2017-11-22
US20090302307A1 (en) 2009-12-10
EP2047527A1 (de) 2009-04-15
US8405065B2 (en) 2013-03-26
TW200810159A (en) 2008-02-16
WO2008014772A1 (de) 2008-02-07
JP2009545865A (ja) 2009-12-24
DE102006035627A1 (de) 2008-02-07
TWI370557B (en) 2012-08-11

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20090216

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid