TWI370557B - Led semiconductor body - Google Patents

Led semiconductor body

Info

Publication number
TWI370557B
TWI370557B TW096127685A TW96127685A TWI370557B TW I370557 B TWI370557 B TW I370557B TW 096127685 A TW096127685 A TW 096127685A TW 96127685 A TW96127685 A TW 96127685A TW I370557 B TWI370557 B TW I370557B
Authority
TW
Taiwan
Prior art keywords
semiconductor body
led semiconductor
led
semiconductor
Prior art date
Application number
TW096127685A
Other languages
English (en)
Other versions
TW200810159A (en
Inventor
Alexander Behres
Guenther Groenninger
Peter Heidborn
Christian Jung
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200810159A publication Critical patent/TW200810159A/zh
Application granted granted Critical
Publication of TWI370557B publication Critical patent/TWI370557B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
TW096127685A 2006-07-31 2007-07-30 Led semiconductor body TWI370557B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006035627A DE102006035627A1 (de) 2006-07-31 2006-07-31 LED-Halbleiterkörper

Publications (2)

Publication Number Publication Date
TW200810159A TW200810159A (en) 2008-02-16
TWI370557B true TWI370557B (en) 2012-08-11

Family

ID=38739481

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096127685A TWI370557B (en) 2006-07-31 2007-07-30 Led semiconductor body

Country Status (8)

Country Link
US (1) US8405065B2 (zh)
EP (1) EP2047527B1 (zh)
JP (1) JP2009545865A (zh)
KR (1) KR20090033897A (zh)
CN (1) CN101496187A (zh)
DE (1) DE102006035627A1 (zh)
TW (1) TWI370557B (zh)
WO (1) WO2008014772A1 (zh)

Families Citing this family (15)

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WO2010091135A1 (en) 2009-02-05 2010-08-12 Arkema Inc. Fibers sized with polyetherketoneketones
JP5684501B2 (ja) * 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5801542B2 (ja) 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
DE102012107795B4 (de) * 2012-08-23 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US9306115B1 (en) 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
DE102015109796A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102015109793A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102015119817A1 (de) 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Halbleiterbauelement
US9859470B2 (en) * 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
KR102333489B1 (ko) * 2019-10-01 2021-12-01 에피스타 코포레이션 발광 디바이스
CN112838150B (zh) * 2020-12-31 2022-05-13 武汉光迅科技股份有限公司 发光二极管及其形成方法

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JPH07202260A (ja) * 1993-12-27 1995-08-04 Furukawa Electric Co Ltd:The 歪超格子発光素子
EP0700138B1 (en) * 1994-08-29 2001-12-19 Matsushita Electric Industrial Co., Ltd. Strained quantum well semiconducteur laser device and method for fabricating the same
JPH09162482A (ja) * 1995-12-08 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
US6233264B1 (en) * 1996-08-27 2001-05-15 Ricoh Company, Ltd. Optical semiconductor device having an active layer containing N
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
JPH11150330A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
JPH11274635A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体発光装置
US6657233B2 (en) * 1998-08-19 2003-12-02 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US20030235224A1 (en) * 2002-06-19 2003-12-25 Ohlander Ulf Roald Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
TWI226138B (en) * 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
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JP2005109124A (ja) * 2003-09-30 2005-04-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
TW200520266A (en) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
JP4164689B2 (ja) 2003-11-21 2008-10-15 サンケン電気株式会社 半導体発光素子
TWI254469B (en) 2004-04-14 2006-05-01 Osram Opto Semiconductors Gmbh Luminous diode chip
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102004026125A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
WO2005122350A1 (ja) * 2004-06-11 2005-12-22 Ricoh Company, Ltd. 面発光レーザダイオードおよびその製造方法
JP4224041B2 (ja) * 2004-08-26 2009-02-12 シャープ株式会社 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム
JP2006120884A (ja) * 2004-10-22 2006-05-11 Ricoh Co Ltd 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
JP2006196880A (ja) * 2004-12-17 2006-07-27 Matsushita Electric Ind Co Ltd 光半導体装置及びその製造方法
US7459719B2 (en) * 2004-12-17 2008-12-02 Panasonic Corporation Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
JP4460473B2 (ja) * 2005-02-23 2010-05-12 シャープ株式会社 半導体レーザ装置の製造方法
US7376169B2 (en) * 2005-03-07 2008-05-20 Joseph Reid Henrichs Optical phase conjugation laser diode
JP2007012688A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体発光素子
DE102006039369A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
US8115213B2 (en) * 2007-02-08 2012-02-14 Phoseon Technology, Inc. Semiconductor light sources, systems, and methods
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US20090238227A1 (en) * 2008-03-05 2009-09-24 Rohm Co., Ltd. Semiconductor light emitting device
JP5102082B2 (ja) * 2008-03-18 2012-12-19 株式会社リコー 画像形成装置

Also Published As

Publication number Publication date
US8405065B2 (en) 2013-03-26
TW200810159A (en) 2008-02-16
US20090302307A1 (en) 2009-12-10
JP2009545865A (ja) 2009-12-24
DE102006035627A1 (de) 2008-02-07
EP2047527A1 (de) 2009-04-15
KR20090033897A (ko) 2009-04-06
EP2047527B1 (de) 2017-11-22
WO2008014772A1 (de) 2008-02-07
CN101496187A (zh) 2009-07-29

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