JP2015529974A - オプトエレクトロニクス半導体ボディ及びオプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体ボディ及びオプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 230000005693 optoelectronics Effects 0.000 title claims description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 205
- 239000002800 charge carrier Substances 0.000 claims abstract description 134
- 230000005855 radiation Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 44
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 152
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
Description
Claims (15)
- 放射発生のために設けられた活性領域(20)と、第1のバリア領域(21)と、第2のバリア領域(22)と含む半導体積層体(2)を有する、
オプトエレクトロニクス半導体ボディ(1)において、
前記活性領域は、前記第1のバリア領域と前記第2のバリア領域との間に配置されており、
前記第1のバリア領域内に、引張応力が与えられた少なくとも1つの電荷キャリアバリア層(3)が配置されている
ことを特徴とする、オプトエレクトロニクス半導体ボディ。 - 前記電荷キャリアバリア層の相対的な格子不整合率は、0.2%以上1%以下である、
請求項1記載のオプトエレクトロニクス半導体ボディ。 - 前記活性領域は、材料系AlxInyGa1-x-yPをベースとし、ただし0≦x≦1かつ0≦y≦1かつx+y≦1であり、前記電荷キャリアバリア層は、0.52≦x≦0.7のアルミニウム含有率xを有する、
請求項1又は2記載のオプトエレクトロニクス半導体ボディ。 - 前記電荷キャリアバリア層は、該電荷キャリアバリア層の両面に接する材料よりも高いアルミニウム含有率を有する、
請求項1から3のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 前記電荷キャリアバリア層に接する材料はガリウム不含である、又は最大で5%のガリウム含有率を有する、
請求項1から4のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 前記電荷キャリアバリア層は、1nm以上25nm以下の厚さを有する、
請求項1から5のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 前記第1のバリア領域は、引張応力が与えられた少なくとも1つの別の電荷キャリアバリア層(35)を含む、
請求項1から6のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 第1の電荷キャリアバリア層と前記別の電荷キャリアバリア層とは、相互に3nm以上200nm以下の間隔をおいて配置されている、
請求項7記載のオプトエレクトロニクス半導体ボディ。 - 第1の電荷キャリアバリア層と前記別の電荷キャリアバリア層とは、相互に50nm以上200nm以下の間隔をおいて配置されている、
請求項7記載のオプトエレクトロニクス半導体ボディ。 - 第1の電荷キャリアバリア層と前記別の電荷キャリアバリア層とは、相互に3nm以上100nm以下の間隔をおいて配置されている、
請求項7記載のオプトエレクトロニクス半導体ボディ。 - 前記別の電荷キャリアバリア層は、前記活性領域から、前記電荷キャリアバリア層の場合よりもさらに離されて配置されており、かつ前記電荷キャリアバリア層よりも高いアルミニウム含有率を有する、
請求項7から10のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 前記電荷キャリアバリア層と前記別の電荷キャリアバリア層との間に、圧縮応力が与えられた中間層(31)が配置されている、
請求項7から11のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 前記活性領域は、少なくとも1つの量子層(201)を含む量子構造を有しており、前記電荷キャリアバリア層は、該電荷キャリアバリア層に最も近い前記量子構造の量子層から、10nm以上900nm以下の間隔をおいて配置されている、
請求項1から12のいずれか1項記載のオプトエレクトロニクス半導体ボディ。 - 請求項1から13のいずれか1項記載の半導体ボディを備えたオプトエレクトロニクス半導体チップにおいて、
前記半導体ボディは支持体(5)の上に配置されている
ことを特徴とする、オプトエレクトロニクス半導体チップ。 - 前記半導体ボディと前記支持体との間に金属のミラー層(72)が配置されている、
請求項14記載のオプトエレクトロニクス半導体チップ。
Applications Claiming Priority (3)
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DE102012107795.9 | 2012-08-23 | ||
DE102012107795.9A DE102012107795B4 (de) | 2012-08-23 | 2012-08-23 | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
PCT/EP2013/066656 WO2014029633A1 (de) | 2012-08-23 | 2013-08-08 | Optoelektronischer halbleiterkörper und optoelektronischer halbleiterchip |
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JP6192722B2 JP6192722B2 (ja) | 2017-09-06 |
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US (1) | US9306114B2 (ja) |
JP (1) | JP6192722B2 (ja) |
CN (1) | CN104584242B (ja) |
DE (1) | DE102012107795B4 (ja) |
WO (1) | WO2014029633A1 (ja) |
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JP2020501355A (ja) * | 2016-12-01 | 2020-01-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 放射線放出半導体ボディ、および半導体積層体の製造方法 |
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DE102017113531A1 (de) * | 2017-06-20 | 2018-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zum Betrieb des optoelektronischen Halbleiterchips |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235733A (ja) * | 1993-12-27 | 1995-09-05 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JPH10294524A (ja) * | 1997-04-18 | 1998-11-04 | Furukawa Electric Co Ltd:The | 半導体レーザ |
JP2002532908A (ja) * | 1998-12-15 | 2002-10-02 | シャープ株式会社 | 光半導体デバイス |
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US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
DE20019477U1 (de) * | 2000-08-08 | 2002-01-24 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
US6608328B2 (en) * | 2001-02-05 | 2003-08-19 | Uni Light Technology Inc. | Semiconductor light emitting diode on a misoriented substrate |
EP1521311A3 (de) | 2003-09-30 | 2010-09-15 | OSRAM Opto Semiconductors GmbH | Strahlungsemittierender Halbleiterkörper mit Confinement-Schichten |
DE102006046237A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
DE102006035627A1 (de) * | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper |
JP2011238678A (ja) * | 2010-05-07 | 2011-11-24 | Panasonic Corp | 半導体発光装置 |
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- 2012-08-23 DE DE102012107795.9A patent/DE102012107795B4/de active Active
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- 2013-08-08 US US14/420,197 patent/US9306114B2/en active Active
- 2013-08-08 CN CN201380044391.0A patent/CN104584242B/zh active Active
- 2013-08-08 WO PCT/EP2013/066656 patent/WO2014029633A1/de active Application Filing
- 2013-08-08 JP JP2015527848A patent/JP6192722B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235733A (ja) * | 1993-12-27 | 1995-09-05 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JPH10294524A (ja) * | 1997-04-18 | 1998-11-04 | Furukawa Electric Co Ltd:The | 半導体レーザ |
JP2002532908A (ja) * | 1998-12-15 | 2002-10-02 | シャープ株式会社 | 光半導体デバイス |
Non-Patent Citations (2)
Title |
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KLAUS STREUBEL, NORBERT LINDER, RALPH WIRTH, AND ARNDT JAEGER: "High Brightness AlGaInP Light-Emitting Diodes", IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS,, vol. VOL8 NO2, JPN6015051967, March 2002 (2002-03-01), pages 321-332 * |
S. J. CHANG, C. S. CHANG, Y. K. SU, SENIOR MEMBER, IEEE, P. T. CHANG, Y. R. WU, K. H. HUANG, AND T.: "AlGaInP Yellow.Green Light-Emitting Diodeswith a Tensile Strain Barrier Cladding Layer", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. VOL9 NO9, JPN6015051964, September 1997 (1997-09-01), pages 1199-1201 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020501355A (ja) * | 2016-12-01 | 2020-01-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 放射線放出半導体ボディ、および半導体積層体の製造方法 |
US10971653B2 (en) | 2016-12-01 | 2021-04-06 | Osram Oled Gmbh | Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence |
JP7097360B2 (ja) | 2016-12-01 | 2022-07-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射線放出半導体ボディ、および半導体積層体の製造方法 |
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US20150200328A1 (en) | 2015-07-16 |
CN104584242B (zh) | 2017-03-22 |
CN104584242A (zh) | 2015-04-29 |
JP6192722B2 (ja) | 2017-09-06 |
DE102012107795A1 (de) | 2014-02-27 |
DE102012107795B4 (de) | 2022-02-03 |
US9306114B2 (en) | 2016-04-05 |
WO2014029633A1 (de) | 2014-02-27 |
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