JP2012519394A5 - - Google Patents

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JP2012519394A5
JP2012519394A5 JP2011553052A JP2011553052A JP2012519394A5 JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5 JP 2011553052 A JP2011553052 A JP 2011553052A JP 2011553052 A JP2011553052 A JP 2011553052A JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5
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film
substrate
region
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item
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JP2011553052A
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JP2012519394A (ja
JP5739824B2 (ja
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Priority claimed from PCT/US2010/025959 external-priority patent/WO2010101946A1/en
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Publication of JP2012519394A5 publication Critical patent/JP2012519394A5/ja
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JP2011553052A 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 Expired - Fee Related JP5739824B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15671009P 2009-03-02 2009-03-02
US61/156,710 2009-03-02
US18453509P 2009-06-05 2009-06-05
US61/184,535 2009-06-05
PCT/US2010/025959 WO2010101946A1 (en) 2009-03-02 2010-03-02 DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014166443A Division JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Publications (3)

Publication Number Publication Date
JP2012519394A JP2012519394A (ja) 2012-08-23
JP2012519394A5 true JP2012519394A5 (enExample) 2013-04-18
JP5739824B2 JP5739824B2 (ja) 2015-06-24

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ID=42666641

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JP2011553052A Expired - Fee Related JP5739824B2 (ja) 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子
JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

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JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Country Status (7)

Country Link
US (2) US8795430B2 (enExample)
EP (1) EP2404312A4 (enExample)
JP (2) JP5739824B2 (enExample)
KR (1) KR20110129444A (enExample)
CN (1) CN102449737A (enExample)
TW (1) TW201044444A (enExample)
WO (1) WO2010101946A1 (enExample)

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US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
TWI560963B (en) * 2010-03-04 2016-12-01 Univ California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction
US8445890B2 (en) * 2010-03-09 2013-05-21 Micron Technology, Inc. Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
TW201222872A (en) 2010-10-26 2012-06-01 Univ California Limiting strain relaxation in III-nitride heterostructures by substrate and epitaxial layer patterning
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
EP2710647A2 (en) 2011-05-13 2014-03-26 The Regents of the University of California SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
US9209358B2 (en) 2011-12-14 2015-12-08 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
PL228006B1 (pl) 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
CN106784181B (zh) * 2016-12-14 2020-06-23 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
CN107068817B (zh) * 2017-04-18 2019-05-10 湘能华磊光电股份有限公司 Led外延生长方法
DE112019003671T5 (de) * 2018-07-20 2021-04-08 Sony Semiconductor Solutions Corporation Halbleiterlichtemissionselement
CN110211865B (zh) * 2019-05-15 2020-12-15 中国电子科技集团公司第五十五研究所 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
FR3098992B1 (fr) * 2019-07-18 2023-01-13 Aledia Diode électroluminescente et procédé de fabrication
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

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US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20060144963A1 (en) * 2003-08-18 2006-07-06 Fulkerson Terrence M Spray applicator for particulate material
US7504274B2 (en) * 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
JP4696285B2 (ja) * 2005-02-25 2011-06-08 京セラ株式会社 Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法
CN101845670A (zh) 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
US7691658B2 (en) * 2006-01-20 2010-04-06 The Regents Of The University Of California Method for improved growth of semipolar (Al,In,Ga,B)N
KR101416838B1 (ko) 2006-02-10 2014-07-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 (Ａｌ,Ｉｎ,Ｇａ,Ｂ)Ｎ의 전도도 제어 방법
JP2007227803A (ja) * 2006-02-24 2007-09-06 Kyocera Corp 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置
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KR101710981B1 (ko) 2006-07-28 2017-02-28 더 트러스티스 오브 더 유니버시티 오브 펜실바니아 개선된 백신 및 이의 사용 방법
JP2008109066A (ja) 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
WO2008067537A2 (en) * 2006-11-30 2008-06-05 University Of South Carolina Method and apparatus for growth of iii-nitride semiconductor epitaxial layers
JP2008235802A (ja) * 2007-03-23 2008-10-02 Rohm Co Ltd 発光装置
US8686396B2 (en) * 2007-05-08 2014-04-01 Nitek, Inc. Non-polar ultraviolet light emitting device and method for fabricating same
US20080296626A1 (en) 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
TWI604512B (zh) * 2007-06-15 2017-11-01 美國加利福尼亞大學董事會 非極性三族氮化物膜、使用其製造之裝置及生長其之方法
EP2176878A4 (en) * 2007-08-08 2010-11-17 Univ California PLANAR NON-POLAR PLAN M GROUP III NITRIDE FILMS THAT ARE GROWN ON CUTTING ANGLE SUBSTRATES
CN100532638C (zh) 2008-05-16 2009-08-26 南京大学 生长非极性面GaN薄膜材料的方法及其用途

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