JP2012519394A5 - - Google Patents
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- JP2012519394A5 JP2012519394A5 JP2011553052A JP2011553052A JP2012519394A5 JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5 JP 2011553052 A JP2011553052 A JP 2011553052A JP 2011553052 A JP2011553052 A JP 2011553052A JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5
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- 239000000758 substrate Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15671009P | 2009-03-02 | 2009-03-02 | |
| US61/156,710 | 2009-03-02 | ||
| US18453509P | 2009-06-05 | 2009-06-05 | |
| US61/184,535 | 2009-06-05 | ||
| PCT/US2010/025959 WO2010101946A1 (en) | 2009-03-02 | 2010-03-02 | DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014166443A Division JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012519394A JP2012519394A (ja) | 2012-08-23 |
| JP2012519394A5 true JP2012519394A5 (enExample) | 2013-04-18 |
| JP5739824B2 JP5739824B2 (ja) | 2015-06-24 |
Family
ID=42666641
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011553052A Expired - Fee Related JP5739824B2 (ja) | 2009-03-02 | 2010-03-02 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
| JP2014166443A Withdrawn JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014166443A Withdrawn JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8795430B2 (enExample) |
| EP (1) | EP2404312A4 (enExample) |
| JP (2) | JP5739824B2 (enExample) |
| KR (1) | KR20110129444A (enExample) |
| CN (1) | CN102449737A (enExample) |
| TW (1) | TW201044444A (enExample) |
| WO (1) | WO2010101946A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9404197B2 (en) * | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| JP5972798B2 (ja) | 2010-03-04 | 2016-08-17 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Ｃ方向において＋／−１５度より少ないミスカットを有するｍ面基板上の半極性ｉｉｉ族窒化物光電子デバイス |
| US8445890B2 (en) | 2010-03-09 | 2013-05-21 | Micron Technology, Inc. | Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing |
| US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| US8853669B2 (en) | 2010-10-26 | 2014-10-07 | The Regents Of The University Of California | Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning |
| US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
| WO2012158593A2 (en) * | 2011-05-13 | 2012-11-22 | The Regents Of The University Of California | SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N |
| US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| PL228006B1 (pl) | 2015-09-23 | 2018-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Dioda superluminescencyjna na bazie stopu AlInGaN |
| CN106784181B (zh) * | 2016-12-14 | 2020-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高绿光或更长波长InGaN量子阱发光效率的方法及结构 |
| CN107068817B (zh) * | 2017-04-18 | 2019-05-10 | 湘能华磊光电股份有限公司 | Led外延生长方法 |
| US12009637B2 (en) * | 2018-07-20 | 2024-06-11 | Sony Semiconductor Solutions Corporation | Semiconductor light emitting device |
| CN110211865B (zh) * | 2019-05-15 | 2020-12-15 | 中国电子科技集团公司第五十五研究所 | 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法 |
| US11195973B1 (en) * | 2019-05-17 | 2021-12-07 | Facebook Technologies, Llc | III-nitride micro-LEDs on semi-polar oriented GaN |
| FR3098992B1 (fr) * | 2019-07-18 | 2023-01-13 | Aledia | Diode électroluminescente et procédé de fabrication |
| US11175447B1 (en) | 2019-08-13 | 2021-11-16 | Facebook Technologies, Llc | Waveguide in-coupling using polarized light emitting diodes |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| JP5252465B2 (ja) * | 2002-12-16 | 2013-07-31 | 独立行政法人科学技術振興機構 | ハイドライド気相成長法による平坦な無極性ａ面窒化ガリウムの成長 |
| CA2534254A1 (en) * | 2003-08-18 | 2005-03-03 | Nordson Corporation | Spray applicator for particulate material |
| US7504274B2 (en) | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| US7956360B2 (en) | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
| JP4696285B2 (ja) * | 2005-02-25 | 2011-06-08 | 京セラ株式会社 | Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法 |
| EP2315253A1 (en) | 2005-03-10 | 2011-04-27 | The Regents of the University of California | Technique for the growth of planar semi-polar gallium nitride |
| WO2007084782A2 (en) * | 2006-01-20 | 2007-07-26 | The Regents Of The University Of California | Method for improved growth of semipolar (al,in,ga,b)n |
| US8193079B2 (en) | 2006-02-10 | 2012-06-05 | The Regents Of The University Of California | Method for conductivity control of (Al,In,Ga,B)N |
| JP2007227803A (ja) * | 2006-02-24 | 2007-09-06 | Kyocera Corp | 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置 |
| JP2007243006A (ja) | 2006-03-10 | 2007-09-20 | Kyocera Corp | 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置 |
| WO2007133603A2 (en) | 2006-05-09 | 2007-11-22 | The Regents Of The University Of California | In-situ defect reduction techniques for nonpolar and semipolar (ai, ga, in)n |
| ES2706501T3 (es) | 2006-07-28 | 2019-03-29 | Univ Pennsylvania | Vacunas de VIH mejoradas |
| JP2008109066A (ja) * | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
| WO2008067537A2 (en) | 2006-11-30 | 2008-06-05 | University Of South Carolina | Method and apparatus for growth of iii-nitride semiconductor epitaxial layers |
| JP2008235802A (ja) * | 2007-03-23 | 2008-10-02 | Rohm Co Ltd | 発光装置 |
| WO2009005894A2 (en) * | 2007-05-08 | 2009-01-08 | Nitek, Inc. | Non-polar ultraviolet light emitting device and method for fabricating same |
| US20080296626A1 (en) | 2007-05-30 | 2008-12-04 | Benjamin Haskell | Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same |
| US8158497B2 (en) * | 2007-06-15 | 2012-04-17 | The Regents Of The University Of California | Planar nonpolar m-plane group III nitride films grown on miscut substrates |
| KR101537300B1 (ko) * | 2007-08-08 | 2015-07-16 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들 |
| CN100532638C (zh) | 2008-05-16 | 2009-08-26 | 南京大学 | 生长非极性面GaN薄膜材料的方法及其用途 |
-
2010
- 2010-03-02 KR KR1020117022867A patent/KR20110129444A/ko not_active Ceased
- 2010-03-02 TW TW099105996A patent/TW201044444A/zh unknown
- 2010-03-02 EP EP10749224.1A patent/EP2404312A4/en not_active Withdrawn
- 2010-03-02 CN CN2010800100512A patent/CN102449737A/zh active Pending
- 2010-03-02 JP JP2011553052A patent/JP5739824B2/ja not_active Expired - Fee Related
- 2010-03-02 WO PCT/US2010/025959 patent/WO2010101946A1/en not_active Ceased
- 2010-03-02 US US12/716,176 patent/US8795430B2/en not_active Expired - Fee Related
-
2014
- 2014-06-24 US US14/313,691 patent/US20140308769A1/en not_active Abandoned
- 2014-08-19 JP JP2014166443A patent/JP2014220531A/ja not_active Withdrawn
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