CN102449737A - 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 - Google Patents
生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 Download PDFInfo
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- CN102449737A CN102449737A CN2010800100512A CN201080010051A CN102449737A CN 102449737 A CN102449737 A CN 102449737A CN 2010800100512 A CN2010800100512 A CN 2010800100512A CN 201080010051 A CN201080010051 A CN 201080010051A CN 102449737 A CN102449737 A CN 102449737A
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- 229910052796 boron Inorganic materials 0.000 title claims abstract description 101
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 229910052738 indium Inorganic materials 0.000 claims abstract description 101
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 99
- 230000012010 growth Effects 0.000 claims abstract description 67
- 239000012159 carrier gas Substances 0.000 claims abstract description 48
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 84
- 239000010408 film Substances 0.000 claims description 70
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000003746 surface roughness Effects 0.000 claims description 13
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 43
- 229910002601 GaN Inorganic materials 0.000 description 41
- 230000010287 polarization Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 14
- 230000005684 electric field Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 238000000879 optical micrograph Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
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- Manufacturing & Machinery (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15671009P | 2009-03-02 | 2009-03-02 | |
| US61/156,710 | 2009-03-02 | ||
| US18453509P | 2009-06-05 | 2009-06-05 | |
| US61/184,535 | 2009-06-05 | ||
| PCT/US2010/025959 WO2010101946A1 (en) | 2009-03-02 | 2010-03-02 | DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102449737A true CN102449737A (zh) | 2012-05-09 |
Family
ID=42666641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800100512A Pending CN102449737A (zh) | 2009-03-02 | 2010-03-02 | 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8795430B2 (enExample) |
| EP (1) | EP2404312A4 (enExample) |
| JP (2) | JP5739824B2 (enExample) |
| KR (1) | KR20110129444A (enExample) |
| CN (1) | CN102449737A (enExample) |
| TW (1) | TW201044444A (enExample) |
| WO (1) | WO2010101946A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784181A (zh) * | 2016-12-14 | 2017-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高绿光或更长波长InGaN量子阱发光效率的方法及结构 |
| CN107068817A (zh) * | 2017-04-18 | 2017-08-18 | 湘能华磊光电股份有限公司 | Led外延生长方法 |
| WO2020228164A1 (zh) * | 2019-05-15 | 2020-11-19 | 中国电子科技集团公司第五十五研究所 | 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9404197B2 (en) * | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| TWI560963B (en) * | 2010-03-04 | 2016-12-01 | Univ California | Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction |
| US8445890B2 (en) * | 2010-03-09 | 2013-05-21 | Micron Technology, Inc. | Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing |
| US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| TW201222872A (en) | 2010-10-26 | 2012-06-01 | Univ California | Limiting strain relaxation in III-nitride heterostructures by substrate and epitaxial layer patterning |
| US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
| EP2710647A2 (en) | 2011-05-13 | 2014-03-26 | The Regents of the University of California | SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N |
| US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| PL228006B1 (pl) | 2015-09-23 | 2018-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Dioda superluminescencyjna na bazie stopu AlInGaN |
| DE112019003671T5 (de) * | 2018-07-20 | 2021-04-08 | Sony Semiconductor Solutions Corporation | Halbleiterlichtemissionselement |
| US11195973B1 (en) * | 2019-05-17 | 2021-12-07 | Facebook Technologies, Llc | III-nitride micro-LEDs on semi-polar oriented GaN |
| FR3098992B1 (fr) * | 2019-07-18 | 2023-01-13 | Aledia | Diode électroluminescente et procédé de fabrication |
| US11175447B1 (en) | 2019-08-13 | 2021-11-16 | Facebook Technologies, Llc | Waveguide in-coupling using polarized light emitting diodes |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060029832A1 (en) * | 2001-06-08 | 2006-02-09 | Xueping Xu | High surface quality GaN wafer and method of fabricating same |
| US20070111488A1 (en) * | 2004-05-10 | 2007-05-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| US20070184637A1 (en) * | 2004-06-03 | 2007-08-09 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| CN101138091A (zh) * | 2005-03-10 | 2008-03-05 | 加利福尼亚大学董事会 | 用于生长平坦半极性氮化镓的技术 |
| CN101270471A (zh) * | 2008-05-16 | 2008-09-24 | 南京大学 | 生长非极性面GaN薄膜材料的方法及其用途 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101086155B1 (ko) * | 2002-12-16 | 2011-11-25 | 독립행정법인 과학기술진흥기구 | 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장 |
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| CN107068817A (zh) * | 2017-04-18 | 2017-08-18 | 湘能华磊光电股份有限公司 | Led外延生长方法 |
| CN107068817B (zh) * | 2017-04-18 | 2019-05-10 | 湘能华磊光电股份有限公司 | Led外延生长方法 |
| WO2020228164A1 (zh) * | 2019-05-15 | 2020-11-19 | 中国电子科技集团公司第五十五研究所 | 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8795430B2 (en) | 2014-08-05 |
| US20140308769A1 (en) | 2014-10-16 |
| EP2404312A4 (en) | 2013-10-02 |
| JP2012519394A (ja) | 2012-08-23 |
| WO2010101946A1 (en) | 2010-09-10 |
| US20100219416A1 (en) | 2010-09-02 |
| TW201044444A (en) | 2010-12-16 |
| KR20110129444A (ko) | 2011-12-01 |
| JP2014220531A (ja) | 2014-11-20 |
| EP2404312A1 (en) | 2012-01-11 |
| JP5739824B2 (ja) | 2015-06-24 |
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