JP5739824B2 - 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 - Google Patents

非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 Download PDF

Info

Publication number
JP5739824B2
JP5739824B2 JP2011553052A JP2011553052A JP5739824B2 JP 5739824 B2 JP5739824 B2 JP 5739824B2 JP 2011553052 A JP2011553052 A JP 2011553052A JP 2011553052 A JP2011553052 A JP 2011553052A JP 5739824 B2 JP5739824 B2 JP 5739824B2
Authority
JP
Japan
Prior art keywords
film
substrate
semipolar
nonpolar
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011553052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012519394A (ja
JP2012519394A5 (enExample
Inventor
ロバート エム． ファレル，
ロバート エム． ファレル，
マイケル アイザ，
マイケル アイザ，
ジェームズ エス． スペック，
ジェームズ エス． スペック，
スティーブン ピー． デンバーズ，
スティーブン ピー． デンバーズ，
シュウジ ナカムラ，
シュウジ ナカムラ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
University of California Berkeley
Original Assignee
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California San Diego UCSD filed Critical University of California San Diego UCSD
Publication of JP2012519394A publication Critical patent/JP2012519394A/ja
Publication of JP2012519394A5 publication Critical patent/JP2012519394A5/ja
Application granted granted Critical
Publication of JP5739824B2 publication Critical patent/JP5739824B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011553052A 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 Expired - Fee Related JP5739824B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15671009P 2009-03-02 2009-03-02
US61/156,710 2009-03-02
US18453509P 2009-06-05 2009-06-05
US61/184,535 2009-06-05
PCT/US2010/025959 WO2010101946A1 (en) 2009-03-02 2010-03-02 DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014166443A Division JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Publications (3)

Publication Number Publication Date
JP2012519394A JP2012519394A (ja) 2012-08-23
JP2012519394A5 JP2012519394A5 (enExample) 2013-04-18
JP5739824B2 true JP5739824B2 (ja) 2015-06-24

Family

ID=42666641

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011553052A Expired - Fee Related JP5739824B2 (ja) 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子
JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Country Status (7)

Country Link
US (2) US8795430B2 (enExample)
EP (1) EP2404312A4 (enExample)
JP (2) JP5739824B2 (enExample)
KR (1) KR20110129444A (enExample)
CN (1) CN102449737A (enExample)
TW (1) TW201044444A (enExample)
WO (1) WO2010101946A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
TWI560963B (en) * 2010-03-04 2016-12-01 Univ California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction
US8445890B2 (en) * 2010-03-09 2013-05-21 Micron Technology, Inc. Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
TW201222872A (en) 2010-10-26 2012-06-01 Univ California Limiting strain relaxation in III-nitride heterostructures by substrate and epitaxial layer patterning
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
EP2710647A2 (en) 2011-05-13 2014-03-26 The Regents of the University of California SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
US9209358B2 (en) 2011-12-14 2015-12-08 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
PL228006B1 (pl) 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
CN106784181B (zh) * 2016-12-14 2020-06-23 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
CN107068817B (zh) * 2017-04-18 2019-05-10 湘能华磊光电股份有限公司 Led外延生长方法
DE112019003671T5 (de) * 2018-07-20 2021-04-08 Sony Semiconductor Solutions Corporation Halbleiterlichtemissionselement
CN110211865B (zh) * 2019-05-15 2020-12-15 中国电子科技集团公司第五十五研究所 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
FR3098992B1 (fr) * 2019-07-18 2023-01-13 Aledia Diode électroluminescente et procédé de fabrication
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20060144963A1 (en) * 2003-08-18 2006-07-06 Fulkerson Terrence M Spray applicator for particulate material
US7504274B2 (en) * 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
JP4696285B2 (ja) * 2005-02-25 2011-06-08 京セラ株式会社 Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法
CN101845670A (zh) 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
US7691658B2 (en) * 2006-01-20 2010-04-06 The Regents Of The University Of California Method for improved growth of semipolar (Al,In,Ga,B)N
KR101416838B1 (ko) 2006-02-10 2014-07-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 (Ａｌ,Ｉｎ,Ｇａ,Ｂ)Ｎ의 전도도 제어 방법
JP2007227803A (ja) * 2006-02-24 2007-09-06 Kyocera Corp 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP2009536606A (ja) * 2006-05-09 2009-10-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非極性および半極性（Ａｌ、Ｇａ、Ｉｎ）Ｎの原位置欠陥低減技術
KR101710981B1 (ko) 2006-07-28 2017-02-28 더 트러스티스 오브 더 유니버시티 오브 펜실바니아 개선된 백신 및 이의 사용 방법
JP2008109066A (ja) 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
WO2008067537A2 (en) * 2006-11-30 2008-06-05 University Of South Carolina Method and apparatus for growth of iii-nitride semiconductor epitaxial layers
JP2008235802A (ja) * 2007-03-23 2008-10-02 Rohm Co Ltd 発光装置
US8686396B2 (en) * 2007-05-08 2014-04-01 Nitek, Inc. Non-polar ultraviolet light emitting device and method for fabricating same
US20080296626A1 (en) 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
TWI604512B (zh) * 2007-06-15 2017-11-01 美國加利福尼亞大學董事會 非極性三族氮化物膜、使用其製造之裝置及生長其之方法
EP2176878A4 (en) * 2007-08-08 2010-11-17 Univ California PLANAR NON-POLAR PLAN M GROUP III NITRIDE FILMS THAT ARE GROWN ON CUTTING ANGLE SUBSTRATES
CN100532638C (zh) 2008-05-16 2009-08-26 南京大学 生长非极性面GaN薄膜材料的方法及其用途

Also Published As

Publication number Publication date
US8795430B2 (en) 2014-08-05
US20140308769A1 (en) 2014-10-16
EP2404312A4 (en) 2013-10-02
JP2012519394A (ja) 2012-08-23
WO2010101946A1 (en) 2010-09-10
US20100219416A1 (en) 2010-09-02
TW201044444A (en) 2010-12-16
KR20110129444A (ko) 2011-12-01
JP2014220531A (ja) 2014-11-20
CN102449737A (zh) 2012-05-09
EP2404312A1 (en) 2012-01-11

Similar Documents

Publication Publication Date Title
JP5739824B2 (ja) 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子
KR101351396B1 (ko) 반극성 (Ｇａ,Ａｌ,Ｉｎ,Ｂ)Ｎ 박막들, 헤테로구조들, 및소자들의 성장 및 제조에 대한 기술
US8592800B2 (en) Optical devices featuring nonpolar textured semiconductor layers
Farrell et al. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
JP4475358B1 (ja) ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、及びエピタキシャルウエハ
US7498182B1 (en) Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same
US8588260B2 (en) Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
US20180269351A1 (en) Indium gallium nitride light emitting devices
WO2007053624A2 (en) Optical devices featuring textured semiconductor layers
Das et al. InGaN/GaN quantum dots on silicon with coalesced nanowire buffer layers: A potential technology for visible silicon photonics
JP5206854B2 (ja) ＧａＮ系半導体レーザ、ＧａＮ系半導体レーザを作製する方法
WO2023034608A1 (en) Iii-nitride-based devices grown on or above a strain compliant template
Zhang Micro-structural and optical investigation of semi-polar (11-22) III-nitrides overgrown on regularly arrayed micro-rods
Liu Microstructural and Compositional Investigations of Indium Gallium Nitride/Gallium Nitride and Aluminum Gallium Nitride/Gallium Nitride Structures for Light Emitting Diodes
JP2006261649A (ja) 窒化物半導体材料および窒化物半導体結晶の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130301

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130301

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140221

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140513

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140819

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150202

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20150212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150424

R150 Certificate of patent or registration of utility model

Ref document number: 5739824

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees