US20180269351A1 - Indium gallium nitride light emitting devices - Google Patents
Indium gallium nitride light emitting devices Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Definitions
- the disclosure relates to InGaN-based light-emitting devices fabricated on an InGaN template layer.
- LEDs visible-spectrum light-emitting diodes
- LDs laser diodes
- InGaN active layers grown pseudomorphic to wurtzite GaN. This is true whether the growth substrate is GaN itself, or a foreign substrate such as sapphire or SiC, since in the latter cases GaN-based template layers are employed. Because the lattice constants of GaN and InN are significantly different, InGaN grown pseudomorphically on GaN substrates or layers has significant stress, where the magnitude increases as the In/Ga ratio in the InGaN layer increases.
- the built-in stress within the InGaN active layers can make it difficult to achieve high quality material and good device operation. Obtaining high quality material and good device operation becomes progressively more difficult as the InN mole fraction increases, which is a requirement for longer wavelength devices.
- increasing the InN mole fraction also increases the built-in electric fields across the active layers due to spontaneous and piezoelectric polarization fields, reducing the overlap between electrons and holes and decreasing the radiative efficiency.
- phase separation see N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M.
- Phase separation in InGaN grown by metalorganic chemical vapor deposition is exhibited beyond a critical limit of a certain InN mole fraction combined with a certain layer thickness. Such a limit is commonly observed for InGaN layers of about 10% InN grown more than 0.2 ⁇ m thick, for example, resulting in “black” or “grey” wafers.
- substrates comprising non-polar (1-100), (11-20), and semi-polar planes of GaN can address some of the problems above.
- the combined spontaneous and piezoelectric polarization vector can be reduced to zero or near-zero, eliminating the electron-hole overlap problem prevalent in c-plane-based devices.
- improved material quality with higher InN mole fraction can be observed, such as is demonstrated in semi-polar material, which has resulted in continuous-wave (cw) true-green laser diodes (LDs) (see Enya et al., “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrates,” Appl. Phys.
- the light emitting device is formed on a gallium- and indium-containing nitride substrate having an n-type layer overlying the substrate, and having an active layer overlying the n-type layer with a p-type layer overlying the active layer.
- the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 m and an InN composition greater than 0.5%.
- a light emitting device is formed of a substrate, an n-type layer overlying the substrate, an active layer overlying the n-type layer, and a p-type layer overlying the active layer.
- Each of the afbrementioned layers is characterized by an in-plane lattice constant greater, by at least 1%, than that of similarly oriented GaN.
- light emitting devices comprising a gallium- and indium-containing nitride substrate; an n-type layer overlying the substrate; an active layer overlying the n-type layer, and a p-type layer overlying the active layer; wherein the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 m and an InN composition greater than 0.5%.
- light emitting devices comprising a substrate; an n-type layer overlying the substrate; an active layer overlying the n-type layer, and a p-type layer overlying the active layer, each of the n-type layer, the active layer, and the p-type layer is characterized by an in-plane lattice constant, wherein each of the in-plane lattice constants is greater, by at least 1%, than an in-plane lattice constant of similarly oriented GaN.
- methods of fabricating a light emitting devices comprising providing a substrate; selecting an InN composition; fabricating an InGaN template by growing an InGaN epitaxial layer having the selected InN composition on the substrate by hydride vapor phase epitaxy; and growing an optoelectronic device structure on the InGaN template.
- FIG. 1 is a chart 100 showing variation in energy bandgap vs. basal-plane lattice constant.
- FIG. 2 is a chart 200 showing variation in external quantum efficiency vs. emission wavelength for several light emitting diodes based on InGaN or AlInGaP active layers (from Denbaars, “Fundamental Limits to Efficiency of LEDs,” DOE Solid State Lighting Workshop, Raleigh, N.C., Feb. 2-4, 2010.)
- FIG. 3 shows a schematic view 300 of the InGaN HVPE reactor, which consists of the source zone and the deposition zone, according to some embodiments.
- FIG. 4 presents a photograph 400 of a susceptor showing a (000-1) GaN substrate after InGaN growth by HVPE.
- FIG. 5 presents a graph 500 showing solid composition of InGaN as a function of growth temperature, according to certain embodiments.
- FIG. 6 is a chart 600 showing growth rate and solid composition percentage as a function of an input partial pressure of group III sources GaCl 3 and InCl 3 , according to certain embodiments.
- FIG. 7 shows an SEM image 700 of an In 0.16 Ga 0.84 N epitaxial layer grown on a (000-1) GaN substrate, according to certain embodiments.
- FIG. 8 depicts cross-sectional maps 800 showing energy dispersive X-ray spectroscopy (EDS) data of InGaN on a (000-1) GaN substrate, according to certain embodiments.
- EDS energy dispersive X-ray spectroscopy
- FIG. 9 shows a plot 900 of an X-ray reciprocal space map (RSM) of ( ⁇ 1-14) diffraction for InGaN on a (000-1) GaN substrate grown by HVPE, according to certain embodiments.
- RSM X-ray reciprocal space map
- FIG. 10 shows structure 1000 for thick InGaN growth on GaN, according to certain embodiments.
- FIG. 11 depicts a comparison chart 1100 showing relative strain for optoelectronic device layer structures on GaN templates as compared with relative strain of optoelectronic device layer structures on InGaN templates, according to certain embodiments.
- FIG. 1 exemplifies this situation.
- Chart 100 shows the variation in energy bandgap vs. basal-plane lattice constant.
- Pseudomorphic strained-to-GaN curve 102 is shown in juxtaposition to the relaxed InGaN curve 104 .
- external quantum efficiencies for LEDs decreases with increasing InN mole fraction, regardless of growth plane orientation. This is depicted in chart 200 of FIG. 2 that shows variations in external quantum efficiency vs. emission wavelength for several light emitting diodes.
- the above problems are circumvented by fabricating InGaN-based light-emitting devices on an InGaN template layer rather than on a layer whose lattice constant is pseudomorphic to GaN.
- Devices fabricated using this technique exhibit a lower strain mismatch between the template layer and device layers, which results in improved optical performance (e.g., via reduced polarization fields) as well as improved reliability (e.g., resulting from higher crystalline quality).
- the long-wavelength range of high-performing light-emitting devices can be extended.
- FIG. 3 shows a schematic view 300 of an InGaN HVPE reactor that consists of a source zone and a deposition zone (K. Hanaoka, H. Murakami, Y. Kumagai and A. Koukitu, “Thermodynamic analysis on HVPE growth of InGaN ternary alloy,” Journal Crystal Growth, vol. 318 (2011) 441-445).
- the mixture gas of Cl 2 and IG Inert Gas such as nitrogen, helium and argon
- the mixture gas Cl 2 , IG and hydrogen feeds into the source boats.
- the reactions representing formation of GaCl 3 , InCl 3 , and NH 3 are identified as reactions 302 , 304 , and 306 , respectively.
- the precursors are deposited on substrate 308 and unreacted species exhausted 310 from the HVPE growth apparatus.
- the group III precursors, GaCl 3 and InCl 3 are generated by reactions (1) and (2) (below), and are transported into the deposition zone.
- the vapor pressures of GaCl 3 and/or InCl 3 vaporized from solid GaCl 3 and InCl 3 sources can be used as the group III precursors.
- the relevant reactions are:
- the group III precursors and NH 3 as the group V precursor are mixed to deposit InGaN alloy on a substrate.
- the reactions in the deposition zone are expressed by reactions (3) and (4), where the InGaN alloy comprises GaN(alloy) and InN(alloy). The reactions are:
- a substantially indium-free seed substrate may be provided.
- the substrate may comprise one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl 2 O 4 spinel, ZnO, BP, ScAlMgO 4 , YFeZnO 4 , MgO, Fe 2 NiO 4 , LiGa 5 O 5 , Na 2 MoO 4 , Na 2 WO 4 , In 2 CdO 4 , LiAlO 2 , LiGaO 2 , Ca 5 La 2 (PO 4 ) 6 O 2 , lithium aluminate, gallium nitride, indium nitride, or aluminum nitride.
- the crystallographic orientation of the substrate is within 5 degrees, within 2 degrees, within 1 degree, within 0.5 degree, within 0.2 degree, within 0.1 degree, within 0.05 degree, within 0.02 degree, or within 0.01 degree of ⁇ 1 0 ⁇ 1 ⁇ 1 ⁇ , ⁇ 1 0 ⁇ 1 ⁇ 2 ⁇ , ⁇ 1 0 ⁇ 1 ⁇ 3 ⁇ , ⁇ 1 1 ⁇ 2 ⁇ 2 ⁇ , ⁇ 2 0 ⁇ 2 ⁇ 1 ⁇ , ⁇ 3 0 ⁇ 3 ⁇ 1 ⁇ , ⁇ 3 0 ⁇ 3 ⁇ 2 ⁇ , ⁇ 2 1 ⁇ 3 ⁇ 1 ⁇ , or ⁇ 3 0 ⁇ 3 ⁇ 4 ⁇ .
- the substrate may have a cubic crystal structure and the surface orientation may be within 5 degrees, within 2 degrees, within 1 degree, within 0.5 degree, within 0.2 degree, within 0.1 degree, within 0.05 degree, within 0.02 degree, or within 0.01 degree of (1 1 1), ( ⁇ 1 ⁇ 1 ⁇ 1), ⁇ 0 0 1 ⁇ , or ⁇ 1 1 0 ⁇ .
- the substrate may have a diameter greater than about 5 millimeters, greater than about 10 millimeters, greater than about 15 millimeters, greater than about 25 millimeters, greater than about 40 millimeters, greater than about 70 millimeters, greater than about 90 millimeters, greater than about 140 millimeters, or greater than about 190 millimeters.
- the seed substrate is wurtzite GaN and the growth surface is substantially N-face GaN.
- the seed substrate may have a dislocation density below 10 7 cm ⁇ 2 , below 10 6 cm ⁇ 2 , below 10 1 cm ⁇ 2 , below 10 4 cm ⁇ 2 , below 10 3 cm ⁇ 2 , or below 102 cm ⁇ 2 .
- the seed substrate may have a stacking-fault concentration below 10 3 cm ⁇ 1 , below 10 2 cm ⁇ 1 , below 10 cm ⁇ 1 or below 1 cm ⁇ 1 .
- the seed substrate may have an optical absorption coefficient below 100 cm ⁇ 1 , below 50 cm ⁇ 1 , below 5 cm ⁇ 1 , below 2 cm ⁇ 1 , below 1 cm ⁇ 1 , or below 0.3 cm ⁇ 1 at wavelengths between about 390 nm and about 700 nm.
- the seed substrate may have an optical absorption coefficient below 100 cm ⁇ 1 , below 50 cm ⁇ 1 , below 5 cm ⁇ 1 , below 2 cm ⁇ 1 , below 1 cm ⁇ 1 , or below 0.3 cm ⁇ 1 at wavelengths between about 700 nm and about 3077 nm and at wavelengths between bout 3333 nm and about 6667 nm.
- the top surface of the seed substrate may have an X-ray diffraction ⁇ -scan rocking curve full-width-at-half-maximum (FWHM) less than about 300 arc sec, less than about 200 arc sec, less than about 100 arc sec, less than about 50 arcsec, less than about 40 arcsec, less than about 30 arcsec, less than about 20 arcsec, or less than about 10 arcsec for the lowest-order symmetric and non-symmetric reflections.
- FWHM full-width-at-half-maximum
- the top surface of the seed substrate may have been prepared by chemical mechanical polishing and may have a root-mean-square surface roughness less than 1 nanometer, less than 0.5 nanometer, less than 0.2 nanometer, or less than 0.1 nanometer, for example, as measured by atomic force microscopy over an area of at least 10 micrometers by 10 micrometers.
- the crystallographic orientation of the top (growth) surface is within about 0.1 degree of the (000-1) N-face.
- the crystallographic orientation of the top surface is miscut from (000-1) N-face by between about 0.1 and about 10 degrees toward a ⁇ 10-10 ⁇ m-plane and is miscut by less than about 0.5 degrees towards an orthogonal ⁇ 11-20 ⁇ a-plane. In certain embodiments, the crystallographic orientation of the top surface is miscut from the (000-1) N-face by between about 0.1 and about 10 degrees toward a ⁇ 11-20 ⁇ a-plane and is miscut by less than about 0.5 degrees towards an orthogonal ⁇ 10-10 ⁇ m-plane.
- the crystallographic orientation of the top surface is miscut from the (000-1) N-face by between about 0.1 and about 10 degrees toward a ⁇ 10-10 ⁇ m-plane and is miscut by between about 0.1 and about 10 degrees towards an orthogonal ⁇ 11-20 ⁇ a-plane.
- an indium-containing nitride layer is deposited onto the substrate prior to initiating HVPE bulk growth on the substrate.
- An indium-containing nitride layer may be deposited at relatively low temperature by at least one of molecular beam epitaxy, hydride vapor phase epitaxy, metalorganic chemical vapor deposition, and atomic layer epitaxy.
- alternating layers of a higher-indium composition and a lower-indium composition are deposited.
- the alternative compositions may be deposited by periodic changes in the gas phase composition above a stationary substrate or by physical transport of the substrate between regions of the reactor providing higher-indium and lower-indium growth environments.
- Deposition of high-crystallinity layers at low temperature may be facilitated by providing one or more hot wires to assist in the decomposition of gas-phase precursor species, by a plasma, or by similar means. Further details are described in U.S. Publication No. 212/0199952, which is incorporated by reference in its entirety.
- partial or full relaxation of an indium-containing nitride layer on the substrate is performed prior to initiating HVPE bulk growth on the substrate.
- the substrate or a layer deposited thereupon is patterned to facilitate atom transport along glide planes to form misfit dislocations.
- a pattern for example to provide stripes, bottom pillars, holes, or a grid, is formed on the substrate or on an epitaxial layer on the substrate by conventional photolithography or by nanoimprint lithography.
- Generation of misfit dislocations may be facilitated by roughening the growth surface before deposition, for example, by deposition of nano-dots, islands, ion bombardment, ion implantation, or by light etching.
- Misfit dislocations may also preferentially be formed by modifying the lattice parameter of the substrate near an epitaxial layer by a process such as atomic diffusion, atomic doping, ion implantation, and/or mechanically straining the substrate.
- misfit dislocations may also be facilitated by deposition of a thin layer of Al x Ga (1-x) N, for example, thinner than about 10 nanometers to 100 nanometers, followed by annealing to a temperature between about 1000 degrees Celsius and about 1400 degrees Celsius in an ammonia-rich atmosphere. Further details are described in U.S. Publication No. 2012/0091465, which is incorporated by reference in its entirety.
- the indium-containing nitride layer is relaxed, having a-axis and c-axis lattice constants within 0.1%, within 0.01%, or within 0.001% of the equilibrium lattice constants for the specific indium-containing nitride composition.
- FIG. 4 A photograph 400 of the susceptor showing the (000-1) GaN substrate after InGaN growth is shown below in FIG. 4 .
- FIG. 5 depicts a graph 500 showing the solid composition of InN in InGaN as a function of the growth temperature.
- the solid composition of InN in InGaN decreases with increasing temperature.
- previous data is also displayed for InGaN grown by using solid sources, GaCl 3 and InCl 3 (N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki, “Vapor phase epitaxy of InGaN using InCl 3 , GaCl 3 and NH 3 sources,” Jpn. Appl. Phys., 36 (1997) pp. L601-L603).
- the content of the solid compositions of the present samples are similar to that of the previous samples.
- P III and P V indicate the input partial pressures of the group III source (P In +P Ga ) and the group V source (P NH3 ).
- FIG. 6 depicts a chart 600 showing the growth rate ( 602 ) and the solid composition ( 604 ) as a function of the input partial pressure of the group III sources.
- the growth rate linearly increases with increasing input pressure, while the solid composition, InN in InGaN, is constant at about 0.16.
- FIG. 7 shows a scanning electron microscope (SEM) image 700 of an In 0.16 Ga 0.84 N epitaxial layer grown on a (000-1) GaN substrate of the methods of the present disclosure.
- the thickness of the epitaxial layer is about 800 nm and the growth rate is about 8.5 ⁇ m/h. Because the thickness of InGaN layer is large (about 800 nm), the expansion stress may have caused the cracks on the InGaN surface. Some methods serve to prevent crack formation, resulting in a high quality thick InGaN layer.
- One such method is the “multi-step grading method.” For example, to grow a crack-free In x Ga 1-x N film, where x is greater than about 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, or 1.0, it may be desirable to grow a series of layers of graded composition.
- a graded layer may consist of successive 1-micron thicknesses of In 0.2x Ga 1-0.2x N, In 0.4x Ga 1-0.4x N, In 0.6x Ga 1-0.6x N, In 0.8x Ga 1-0.8x N, followed by a thicker In x Ga 1-x N film.
- the thickness of the intermediate-composition layers lies between 10 nanometers and 5 microns.
- the composition is graded continuously rather than as discrete layers with each layer having a fixed InGaN composition.
- FIG. 8 depicts cross-sectional maps 800 showing energy dispersive X-ray spectroscopy (EDS) data of InGaN on ⁇ C GaN, using the same sample shown in FIG. 7 .
- Measurement conditions are as follows: accelerating voltage: 20 kV, emission current: 20 ⁇ A, spot size: 7, WD: 15 mm, wavelength resolution: 130 eV to 140 eV. From the mapping data, it can be seen that the InGaN layer exhibits a relatively homogeneous solid composition.
- FIG. 9 presents a plot 900 showing the reciprocal space map (RSM) of ( ⁇ 1-14) diffraction for InGaN on ⁇ C GaN grown by HVPE (same sample shown in FIG. 7 ).
- FIG. 9 shows that the InGaN layer is fully relaxed with respect to the GaN substrate because the grown thickness of InGaN is about 800 nm.
- FIG. 10 shows a new structure 1000 for thick InGaN growth without cracks grown using a graded structure, as described above.
- This structure can be grown using a HVPE reactor described in the present disclosure.
- the growth rate of InGaN is very fast and it is easy to grow 1 ⁇ m-thick multi-step layers (see layers).
- this structure is deposited onto a substrate 1004 .
- a GaN layer 1002 deposited upon the substrate may be patterned to facilitate atom transport along glide planes to form misfit dislocations, as described in U.S. Patent Application Publication. No. 2012/0091465, which is incorporated by reference in its entirety.
- the InGaN layer is left on its seed substrate. If necessary, a polishing step (e.g., chemical-mechanical polishing) may be provided to prepare the surface for epitaxial growth.
- the N-face InGaN material is grown very thick, to several hundred microns or more, to provide a free-standing InGaN crystal or boule.
- the indium-containing nitride crystal or boule is relaxed, having a-axis and c-axis lattice constants within 0.1% within 0.01%, or within 0.001% of the equilibrium lattice constants for the specific indium-containing nitride composition.
- the InGaN boule may be machined by well-known wafering techniques to provide one or more InGaN wafers. Steps for wafering may include wire-sawing, lapping, polishing, and chemical cleaning steps. A typical wafer thickness may be between 100 and 750 microns, more typically between 250 and 350 microns. In certain embodiments, an InGaN boule or wafer is used as a seed for further bulk growth, for example, by HVPE, by an ammonothermal technique, by a flux technique, or by a solution growth technique.
- either the +c or ⁇ c orientation surface may be selected preferentially for final preparation for epitaxial growth (that is, the “backside” need not have all the same polishing and or cleaning steps). In certain embodiments it is preferable to remove the original seed substrate at some point in the process.
- the InGaN template is provided for device fabrication as follows. Typically, the template is placed in a metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) reactor for deposition of device quality layers. This is accomplished by reacting tri-methyl (-ethyl) indium, tri-methyl (-ethyl) gallium, and/or tri-methyl (-ethyl) aluminum in the presence of ammonia (NH 3 ) in nitrogen and/or hydrogen carrier gas, at elevated temperatures (500° C. to 1000° C.).
- MOCVD metal-organic chemical vapor deposition
- MBE molecular beam epitaxy
- the ratio of precursors is selected in order to provide a close lattice match to the InGaN template, and can be controlled by monitoring of mass flow controllers (MFCs), or growth temperature, or by in situ wafer bow measurements.
- MFCs mass flow controllers
- an n-type InGaN layer is deposited first.
- the n-type characteristic may be achieved unintentionally (i.e., background oxygen) or intentionally by introducing donor species (e.g., Si via silane).
- donor species e.g., Si via silane
- an InGaN or AlGaInN active layer structure is deposited.
- a common active layer structure is a multiple-quantum-well structure.
- the light-emitting layers are grown with a higher InN mole fraction than the template and the barrier layers (if any) separating the light-emitting layers.
- the active region may be undoped, n-type doped, or p-type doped.
- the p-type characteristic is typically achieved by introducing acceptor species (e.g., Mg via Cp 2 Mg).
- acceptor species e.g., Mg via Cp 2 Mg.
- a spacer layer may be provided, before growing the p-type layers.
- the p-type layers may include an InGaN, GaN, AlGaN, or AlGaInN “electron blocking” layer to assist in carrier confinement in the active layers during device operation.
- a p-type InGaN layer is grown, followed by an InGaN or GaN p+ contact layer.
- MOCVD growth the entire structure is annealed at elevated temperature to activate the p-type layers through redistribution of hydrogen which has been grown into the crystal.
- a device structure is illustrated schematically in comparison chart 1100 of FIG. 11 .
- the top illustration indicates a device structure where the growth template is a GaN template (on, for example, sapphire, silicon carbide, or silicon) or a GaN substrate.
- the lattice constant along the in-plane direction is that of GaN and the epitaxial layers are grown pseudomorphically to the GaN template or substrate.
- the device layers grown thereon include InGaN active (e.g., quantum well) layers and AlGaN (e.g., electron blocking) layers.
- the native in-plane lattice constants of these tertiary alloys are larger (InGaN) or smaller (AlGaN) than that of GaN, resulting in strong compressive or tensile stress, respectively, in these pseudomorphically grown layers.
- InGaN InGaN
- AlGaN AlGaN
- significant InN is required, resulting in severe compressive stress that can result in poor quality crystal growth and consequently, poor device performance and reliability.
- the InGaN template is chosen to provide larger in-plane lattice constant than that of GaN, providing for a strain-compensated design, wherein compressive and tensile stress are balanced out so that the entire crystal structure has strong mechanical integrity. This results in more design freedom, higher crystal quality, and better performance and reliability in devices.
- the active layer is designed so that the InGaN template is substantially transparent with respect to the wavelength(s) of light emitted by the active layer.
- the composition of the InGaN substrate is specified by In y Ga 1-y N, where 0.05 5 ⁇ y ⁇ 1
- the composition of the active layer is designated by In x Ga 1-x N, where 0.05 ⁇ x ⁇ 1
- x may be chosen to be greater than y by at least about 0.01, at least about 0.02, or at least about 0.05.
- the resulting compressive strain may be compensated by tensile strain associated with GaN, AlN, AlInGaN, or In z Ga 1-z N, where 0.0 ⁇ z ⁇ y, barrier layers, electron-blocking layers, p-type layers, and the like.
- tensile strain associated with GaN, AlN, AlInGaN, or In z Ga 1-z N, where 0.0 ⁇ z ⁇ y, barrier layers, electron-blocking layers, p-type layers, and the like.
- AlInGaN compositions may be suitable for selecting a strain state while providing desired bandgap engineering for the device layer stack.
- the InGaN template is conductive and a vertical light-emitting device may be fabricated, in which case an ohmic contact electrode is made to the back of the InGaN template.
- the n-type electrode is provided after etching through the p-type and active layers down to the n-type epitaxial or n-type InGaN template layers.
- Suitable n-type ohmic contact metallizations include Ti and Al, and combinations thereof.
- the p-type electrode is provided on the p+ contact layer.
- Suitable p-type ohmic contact metallizations include Ni, Au, Pt, Pd, and Ag, and combinations thereof.
- LEDs light-emitting diodes
- reflective metallizations are sometimes preferred.
- extraction features may be incorporated into one of more exposed surfaces of the wafer. Extraction features may include roughened aspects as well as ordered texturing, including photonic crystal structures.
- the wafer may be diced into multiple LED chips, by means such as laser scribe and break, diamond tool scribe and break, sawing, etc. After dicing, further extraction features may be incorporated into the chip side surfaces, by means such as wet chemical etching.
- the wafer may be laser scribed and broken into bars to provide mirror facets for multiple laser stripes.
- the mirror facets may be coated to provide high-reflectivity or anti-reflection properties, to optimize total laser light output.
- the individual laser diode chips may be obtained in a further singulation step, which may include another scribe and break step.
- the light-emitting device is packaged into a suitable housing, and electrical connections are made to the n and p ohmic contacts electrodes.
- Thermal management is provided by providing a thermally conductive path from the active layers to the package housing.
- Optical encapsulation and/or lensing may be provided by primary optics comprising, for example, transparent materials such as silicones or glass.
- the final packaged device may be then incorporated into a solid state lighting product such as a lamp, luminaire, or light engine for displays.
- the growth substrate maybe be polar (+c or ⁇ c plane), non-polar (a or m plane), or semi-polar (e.g., 11 ⁇ 2 ⁇ 2, 10 ⁇ 1 ⁇ 1, 20 ⁇ 2 ⁇ 1, 30 ⁇ 3 ⁇ 1, 30 ⁇ 3 ⁇ 2, etc.), which will provide for an InGaN template of similar orientation.
- This allows one to utilize the benefits of the chosen plane (e.g., polarization field reduction) for the InGaN device.
Abstract
Description
- The present application claims the benefit under 35 U.S.C. § 119(c) of U.S. Provisional Application No. 61/714,693 filed on Oct. 16, 2012, and is a continuation of U.S. application Ser. No. 14/054,234, both of which are incorporated herein by reference.
- Certain embodiments of the present application are related to material disclosed in U.S. Pat. No. 8,482,104, and U.S. Publication No. 2012/0091465, each of which is incorporated by reference in its entirety.
- The disclosure relates to InGaN-based light-emitting devices fabricated on an InGaN template layer.
- Today's state-of-the-art visible-spectrum light-emitting diodes (LEDs) and laser diodes (LDs) in the ultraviolet to green (380 nm to 550 nm) regime are based on InGaN active layers grown pseudomorphic to wurtzite GaN. This is true whether the growth substrate is GaN itself, or a foreign substrate such as sapphire or SiC, since in the latter cases GaN-based template layers are employed. Because the lattice constants of GaN and InN are significantly different, InGaN grown pseudomorphically on GaN substrates or layers has significant stress, where the magnitude increases as the In/Ga ratio in the InGaN layer increases.
- The built-in stress within the InGaN active layers can make it difficult to achieve high quality material and good device operation. Obtaining high quality material and good device operation becomes progressively more difficult as the InN mole fraction increases, which is a requirement for longer wavelength devices. In addition, for c-plane grown devices, increasing the InN mole fraction also increases the built-in electric fields across the active layers due to spontaneous and piezoelectric polarization fields, reducing the overlap between electrons and holes and decreasing the radiative efficiency. Moreover, there is evidence that material breakdown occurs once the stress level becomes too high, resulting in so-called “phase separation” (see N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 72, pp. 40-42, 1998). Phase separation is exhibited beyond a critical limit of a certain InN mole fraction combined with a certain layer thickness. Such a limit is commonly observed for InGaN layers of about 10% InN grown more than 0.2 μm thick, for example, resulting in “black” or “grey” wafers.
- The use of substrates comprising non-polar (1-100), (11-20), and semi-polar planes of GaN can address some of the problems above. In particular, for certain growth planes, the combined spontaneous and piezoelectric polarization vector can be reduced to zero or near-zero, eliminating the electron-hole overlap problem prevalent in c-plane-based devices. Also, improved material quality with higher InN mole fraction can be observed, such as is demonstrated in semi-polar material, which has resulted in continuous-wave (cw) true-green laser diodes (LDs) (see Enya et al., “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrates,” Appl. Phys. Express 2, 082101, 2009; J. W. Raring et al., “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3, 112101 (2010)). However, the performance of longer-wavelength devices grown on these structures still suffers considerably compared to that of their shorter-wavelength counterparts. Also, it is not clear that growth plane orientation would eliminate the material quality problems associated with strain. Indeed, recent characterization of semi-polar (Al,In,Ga)N heterostructures reveals the formation of a large density of misfit dislocations at heterointerfaces between AlGaN and GaN, for example (see A. Tyagi et al., “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11-22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905, 2009). These dislocations are likely to act as non-radiative recombination centers, and these dislocations may also provide potential degradation mechanisms which may prevent long-life operation (e.g., as is necessary for applications such as solid-state lighting). Further, reported external quantum efficiencies vs. wavelength for LEDs generally show a strong reduction in external quantum efficiency with increasing InN mole fraction, which is often referred to as the “green gap,” regardless of growth plane orientation.
- Disclosed herein are light emitting devices. In one embodiment, the light emitting device is formed on a gallium- and indium-containing nitride substrate having an n-type layer overlying the substrate, and having an active layer overlying the n-type layer with a p-type layer overlying the active layer. In this specific embodiment, the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 m and an InN composition greater than 0.5%.
- In another embodiment, a light emitting device is formed of a substrate, an n-type layer overlying the substrate, an active layer overlying the n-type layer, and a p-type layer overlying the active layer. Each of the afbrementioned layers is characterized by an in-plane lattice constant greater, by at least 1%, than that of similarly oriented GaN.
- In certain aspects, light emitting devices are provided comprising a gallium- and indium-containing nitride substrate; an n-type layer overlying the substrate; an active layer overlying the n-type layer, and a p-type layer overlying the active layer; wherein the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 m and an InN composition greater than 0.5%.
- In certain aspects, light emitting devices are provided comprising a substrate; an n-type layer overlying the substrate; an active layer overlying the n-type layer, and a p-type layer overlying the active layer, each of the n-type layer, the active layer, and the p-type layer is characterized by an in-plane lattice constant, wherein each of the in-plane lattice constants is greater, by at least 1%, than an in-plane lattice constant of similarly oriented GaN.
- In certain aspects, methods of fabricating a light emitting devices are provided comprising providing a substrate; selecting an InN composition; fabricating an InGaN template by growing an InGaN epitaxial layer having the selected InN composition on the substrate by hydride vapor phase epitaxy; and growing an optoelectronic device structure on the InGaN template.
- Further details of aspects, objectives, and advantages of the disclosure are described below and in the detailed description, drawings, and claims. Both the foregoing general description of the background and the following detailed description are exemplary and explanatory, and are not intended to be limiting as to the scope of the claims.
-
FIG. 1 is achart 100 showing variation in energy bandgap vs. basal-plane lattice constant. -
FIG. 2 is achart 200 showing variation in external quantum efficiency vs. emission wavelength for several light emitting diodes based on InGaN or AlInGaP active layers (from Denbaars, “Fundamental Limits to Efficiency of LEDs,” DOE Solid State Lighting Workshop, Raleigh, N.C., Feb. 2-4, 2010.) -
FIG. 3 shows aschematic view 300 of the InGaN HVPE reactor, which consists of the source zone and the deposition zone, according to some embodiments. -
FIG. 4 presents aphotograph 400 of a susceptor showing a (000-1) GaN substrate after InGaN growth by HVPE. -
FIG. 5 presents agraph 500 showing solid composition of InGaN as a function of growth temperature, according to certain embodiments. -
FIG. 6 is achart 600 showing growth rate and solid composition percentage as a function of an input partial pressure of group III sources GaCl3 and InCl3, according to certain embodiments. -
FIG. 7 shows anSEM image 700 of an In0.16Ga0.84N epitaxial layer grown on a (000-1) GaN substrate, according to certain embodiments. -
FIG. 8 depictscross-sectional maps 800 showing energy dispersive X-ray spectroscopy (EDS) data of InGaN on a (000-1) GaN substrate, according to certain embodiments. -
FIG. 9 shows aplot 900 of an X-ray reciprocal space map (RSM) of (−1-14) diffraction for InGaN on a (000-1) GaN substrate grown by HVPE, according to certain embodiments. -
FIG. 10 showsstructure 1000 for thick InGaN growth on GaN, according to certain embodiments. -
FIG. 11 depicts acomparison chart 1100 showing relative strain for optoelectronic device layer structures on GaN templates as compared with relative strain of optoelectronic device layer structures on InGaN templates, according to certain embodiments. - The patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawings will be provided upon request and payment of the necessary fee.
- Today's state-of-the-art visible-spectrum light-emitting diodes (LEDs) and laser diodes (LDs) in the ultraviolet to green (380 nm to 550 nm) regime are based on InGaN active layers grown pseudomorphic to wurtzite GaN.
FIG. 1 exemplifies this situation. Chart 100 shows the variation in energy bandgap vs. basal-plane lattice constant. Pseudomorphic strained-to-GaN curve 102 is shown in juxtaposition to therelaxed InGaN curve 104. Moreover, external quantum efficiencies for LEDs decreases with increasing InN mole fraction, regardless of growth plane orientation. This is depicted inchart 200 ofFIG. 2 that shows variations in external quantum efficiency vs. emission wavelength for several light emitting diodes. - In this disclosure, the above problems are circumvented by fabricating InGaN-based light-emitting devices on an InGaN template layer rather than on a layer whose lattice constant is pseudomorphic to GaN. Devices fabricated using this technique exhibit a lower strain mismatch between the template layer and device layers, which results in improved optical performance (e.g., via reduced polarization fields) as well as improved reliability (e.g., resulting from higher crystalline quality). Moreover, in accordance with this disclosure, the long-wavelength range of high-performing light-emitting devices can be extended.
- When carrying out certain embodiments of this disclosure, a seed substrate is placed into a reaction chamber for hydride vapor phase epitaxy deposition of InGaN, to form an InGaN template.
FIG. 3 shows aschematic view 300 of an InGaN HVPE reactor that consists of a source zone and a deposition zone (K. Hanaoka, H. Murakami, Y. Kumagai and A. Koukitu, “Thermodynamic analysis on HVPE growth of InGaN ternary alloy,” Journal Crystal Growth, vol. 318 (2011) 441-445). In the source zone, two boats for gallium metal and indium metal are located, and the mixture gas of Cl2 and IG (Inert Gas such as nitrogen, helium and argon), or the mixture gas Cl2, IG, and hydrogen feeds into the source boats. InFIG. 5 , the reactions representing formation of GaCl3, InCl3, and NH3, are identified asreactions 302, 304, and 306, respectively. The precursors are deposited onsubstrate 308 and unreacted species exhausted 310 from the HVPE growth apparatus. The group III precursors, GaCl3 and InCl3, are generated by reactions (1) and (2) (below), and are transported into the deposition zone. In substitution for the above reactions, the vapor pressures of GaCl3 and/or InCl3 vaporized from solid GaCl3 and InCl3 sources can be used as the group III precursors. Thus, the relevant reactions are: -
Ga(s)+1.5Cl2→GaCl3 (1) -
In(s)+1.5Cl2→InCl3 (2) - In the deposition zone, the group III precursors and NH3 as the group V precursor are mixed to deposit InGaN alloy on a substrate. The reactions in the deposition zone are expressed by reactions (3) and (4), where the InGaN alloy comprises GaN(alloy) and InN(alloy). The reactions are:
-
GaCl3+NH3→GaN(alloy)+3HCl (3) -
InCl3+NH3→InN(alloy)+3HCl (4) - A substantially indium-free seed substrate may be provided. The substrate may comprise one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, BP, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O5, Na2MoO4, Na2WO4, In2CdO4, LiAlO2, LiGaO2, Ca5La2(PO4)6O2, lithium aluminate, gallium nitride, indium nitride, or aluminum nitride. The substrate may have a wurtzite crystal structure and the surface orientation may be within 5 degrees, within 2 degrees, within 1 degree, within 0.5 degree, within 0.2 degree, within 0.1 degree, within 0.05 degree, within 0.02 degree, or within 0.01 degree of the (0 0 0 1)+c plane, the (0 0 0 −1) −c plane, the {1 0 −1 0} m-plane, the {1 1 −2 0} the a-plane, or ta (h k i l) semi-polar plane, where l and at least one of h and k are nonzero and i=−(h+k). In a specific embodiment, the crystallographic orientation of the substrate is within 5 degrees, within 2 degrees, within 1 degree, within 0.5 degree, within 0.2 degree, within 0.1 degree, within 0.05 degree, within 0.02 degree, or within 0.01 degree of {1 0 −1 ±1}, {1 0 −1 ±2}, {1 0−1 ±3}, {1 1 −2 ±2}, {2 0−2 ±1}, {3 0 −3 ±1}, {3 0 −3 ±2}, {2 1 −3 ±1}, or {3 0 −3 ±4}. The substrate may have a cubic crystal structure and the surface orientation may be within 5 degrees, within 2 degrees, within 1 degree, within 0.5 degree, within 0.2 degree, within 0.1 degree, within 0.05 degree, within 0.02 degree, or within 0.01 degree of (1 1 1), (−1 −1 −1), {0 0 1}, or {1 1 0}. The substrate may have a diameter greater than about 5 millimeters, greater than about 10 millimeters, greater than about 15 millimeters, greater than about 25 millimeters, greater than about 40 millimeters, greater than about 70 millimeters, greater than about 90 millimeters, greater than about 140 millimeters, or greater than about 190 millimeters.
- In a specific embodiment, the seed substrate is wurtzite GaN and the growth surface is substantially N-face GaN. The seed substrate may have a dislocation density below 107 cm−2, below 106 cm−2, below 101 cm−2, below 104 cm−2, below 103 cm−2, or below 102 cm−2. The seed substrate may have a stacking-fault concentration below 103 cm−1, below 102 cm−1, below 10 cm−1 or below 1 cm−1. The seed substrate may have an optical absorption coefficient below 100 cm−1, below 50 cm−1, below 5 cm−1, below 2 cm−1, below 1 cm−1, or below 0.3 cm−1 at wavelengths between about 390 nm and about 700 nm. The seed substrate may have an optical absorption coefficient below 100 cm−1, below 50 cm−1, below 5 cm−1, below 2 cm−1, below 1 cm−1, or below 0.3 cm−1 at wavelengths between about 700 nm and about 3077 nm and at wavelengths between bout 3333 nm and about 6667 nm. The top surface of the seed substrate may have an X-ray diffraction ω-scan rocking curve full-width-at-half-maximum (FWHM) less than about 300 arc sec, less than about 200 arc sec, less than about 100 arc sec, less than about 50 arcsec, less than about 40 arcsec, less than about 30 arcsec, less than about 20 arcsec, or less than about 10 arcsec for the lowest-order symmetric and non-symmetric reflections. The top surface of the seed substrate may have been prepared by chemical mechanical polishing and may have a root-mean-square surface roughness less than 1 nanometer, less than 0.5 nanometer, less than 0.2 nanometer, or less than 0.1 nanometer, for example, as measured by atomic force microscopy over an area of at least 10 micrometers by 10 micrometers. In certain embodiments, the crystallographic orientation of the top (growth) surface is within about 0.1 degree of the (000-1) N-face. In certain embodiments, the crystallographic orientation of the top surface is miscut from (000-1) N-face by between about 0.1 and about 10 degrees toward a {10-10} m-plane and is miscut by less than about 0.5 degrees towards an orthogonal {11-20} a-plane. In certain embodiments, the crystallographic orientation of the top surface is miscut from the (000-1) N-face by between about 0.1 and about 10 degrees toward a {11-20} a-plane and is miscut by less than about 0.5 degrees towards an orthogonal {10-10} m-plane. In certain embodiments, the crystallographic orientation of the top surface is miscut from the (000-1) N-face by between about 0.1 and about 10 degrees toward a {10-10} m-plane and is miscut by between about 0.1 and about 10 degrees towards an orthogonal {11-20} a-plane.
- In certain embodiments an indium-containing nitride layer is deposited onto the substrate prior to initiating HVPE bulk growth on the substrate. An indium-containing nitride layer may be deposited at relatively low temperature by at least one of molecular beam epitaxy, hydride vapor phase epitaxy, metalorganic chemical vapor deposition, and atomic layer epitaxy. In certain embodiments, alternating layers of a higher-indium composition and a lower-indium composition are deposited. The alternative compositions may be deposited by periodic changes in the gas phase composition above a stationary substrate or by physical transport of the substrate between regions of the reactor providing higher-indium and lower-indium growth environments. Deposition of high-crystallinity layers at low temperature may be facilitated by providing one or more hot wires to assist in the decomposition of gas-phase precursor species, by a plasma, or by similar means. Further details are described in U.S. Publication No. 212/0199952, which is incorporated by reference in its entirety. In certain embodiments, partial or full relaxation of an indium-containing nitride layer on the substrate is performed prior to initiating HVPE bulk growth on the substrate. In certain embodiments, the substrate or a layer deposited thereupon is patterned to facilitate atom transport along glide planes to form misfit dislocations. If desired, a pattern, for example to provide stripes, bottom pillars, holes, or a grid, is formed on the substrate or on an epitaxial layer on the substrate by conventional photolithography or by nanoimprint lithography. Generation of misfit dislocations may be facilitated by roughening the growth surface before deposition, for example, by deposition of nano-dots, islands, ion bombardment, ion implantation, or by light etching. Misfit dislocations may also preferentially be formed by modifying the lattice parameter of the substrate near an epitaxial layer by a process such as atomic diffusion, atomic doping, ion implantation, and/or mechanically straining the substrate. Generation of misfit dislocations may also be facilitated by deposition of a thin layer of AlxGa(1-x)N, for example, thinner than about 10 nanometers to 100 nanometers, followed by annealing to a temperature between about 1000 degrees Celsius and about 1400 degrees Celsius in an ammonia-rich atmosphere. Further details are described in U.S. Publication No. 2012/0091465, which is incorporated by reference in its entirety. In certain embodiments, the indium-containing nitride layer is relaxed, having a-axis and c-axis lattice constants within 0.1%, within 0.01%, or within 0.001% of the equilibrium lattice constants for the specific indium-containing nitride composition.
- Recent results using an N-face (000-1) GaN substrate are disclosed. A mirror-like surface can be obtained. However, in some cases there may be cracks on the surface of the InGaN layer caused by the expansion stress. A
photograph 400 of the susceptor showing the (000-1) GaN substrate after InGaN growth is shown below inFIG. 4 . -
FIG. 5 depicts agraph 500 showing the solid composition of InN in InGaN as a function of the growth temperature. The solid composition of InN in InGaN decreases with increasing temperature. InFIG. 5 , previous data is also displayed for InGaN grown by using solid sources, GaCl3 and InCl3 (N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki, “Vapor phase epitaxy of InGaN using InCl3, GaCl3 and NH3 sources,” Jpn. Appl. Phys., 36 (1997) pp. L601-L603). The content of the solid compositions of the present samples are similar to that of the previous samples. However, photoluminescence of the previous samples was not observed due to the high impurity concentration in solid sources. In the figure, PIII and PV indicate the input partial pressures of the group III source (PIn+PGa) and the group V source (PNH3). -
FIG. 6 depicts achart 600 showing the growth rate (602) and the solid composition (604) as a function of the input partial pressure of the group III sources. The growth rate linearly increases with increasing input pressure, while the solid composition, InN in InGaN, is constant at about 0.16. -
FIG. 7 shows a scanning electron microscope (SEM)image 700 of an In0.16Ga0.84N epitaxial layer grown on a (000-1) GaN substrate of the methods of the present disclosure. The thickness of the epitaxial layer is about 800 nm and the growth rate is about 8.5 μm/h. Because the thickness of InGaN layer is large (about 800 nm), the expansion stress may have caused the cracks on the InGaN surface. Some methods serve to prevent crack formation, resulting in a high quality thick InGaN layer. One such method is the “multi-step grading method.” For example, to grow a crack-free InxGa1-xN film, where x is greater than about 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, or 1.0, it may be desirable to grow a series of layers of graded composition. For example, a graded layer may consist of successive 1-micron thicknesses of In0.2xGa1-0.2xN, In0.4xGa1-0.4xN, In0.6xGa1-0.6xN, In0.8xGa1-0.8xN, followed by a thicker InxGa1-xN film. In certain embodiments, the thickness of the intermediate-composition layers lies between 10 nanometers and 5 microns. In certain embodiments, the composition is graded continuously rather than as discrete layers with each layer having a fixed InGaN composition. -
FIG. 8 depictscross-sectional maps 800 showing energy dispersive X-ray spectroscopy (EDS) data of InGaN on −C GaN, using the same sample shown inFIG. 7 . Measurement conditions are as follows: accelerating voltage: 20 kV, emission current: 20 μA, spot size: 7, WD: 15 mm, wavelength resolution: 130 eV to 140 eV. From the mapping data, it can be seen that the InGaN layer exhibits a relatively homogeneous solid composition. -
FIG. 9 presents aplot 900 showing the reciprocal space map (RSM) of (−1-14) diffraction for InGaN on −C GaN grown by HVPE (same sample shown inFIG. 7 ).FIG. 9 shows that the InGaN layer is fully relaxed with respect to the GaN substrate because the grown thickness of InGaN is about 800 nm. The lattice constant of InGaN layer is estimated to be a=0.32657 nm and c=0.52712 nm. Assuming that the lattice constant of InGaN follows Vegard's law of linear function between InN and GaN, solid composition x in InxGa1-xN should be 0.216 (estimation from the a-axis lattice constant). Since the value is somewhat different from that estimated from the c-axis lattice constant of InGaN (x=0.152), residual strain and/or some impurities are thought to be included in the layer. -
FIG. 10 shows anew structure 1000 for thick InGaN growth without cracks grown using a graded structure, as described above. This structure can be grown using a HVPE reactor described in the present disclosure. The growth rate of InGaN is very fast and it is easy to grow 1 μm-thick multi-step layers (see layers). In certain embodiments, this structure is deposited onto asubstrate 1004. AGaN layer 1002 deposited upon the substrate may be patterned to facilitate atom transport along glide planes to form misfit dislocations, as described in U.S. Patent Application Publication. No. 2012/0091465, which is incorporated by reference in its entirety. - There are several ways to provide the final InGaN template suitable for subsequent epitaxial growth and device fabrication. In one embodiment, the InGaN layer is left on its seed substrate. If necessary, a polishing step (e.g., chemical-mechanical polishing) may be provided to prepare the surface for epitaxial growth. In another embodiment, the N-face InGaN material is grown very thick, to several hundred microns or more, to provide a free-standing InGaN crystal or boule. In certain embodiment, the indium-containing nitride crystal or boule is relaxed, having a-axis and c-axis lattice constants within 0.1% within 0.01%, or within 0.001% of the equilibrium lattice constants for the specific indium-containing nitride composition. The InGaN boule may be machined by well-known wafering techniques to provide one or more InGaN wafers. Steps for wafering may include wire-sawing, lapping, polishing, and chemical cleaning steps. A typical wafer thickness may be between 100 and 750 microns, more typically between 250 and 350 microns. In certain embodiments, an InGaN boule or wafer is used as a seed for further bulk growth, for example, by HVPE, by an ammonothermal technique, by a flux technique, or by a solution growth technique. In the case of polar or semi-polar orientations, either the +c or −c orientation surface may be selected preferentially for final preparation for epitaxial growth (that is, the “backside” need not have all the same polishing and or cleaning steps). In certain embodiments it is preferable to remove the original seed substrate at some point in the process.
- The InGaN template is provided for device fabrication as follows. Typically, the template is placed in a metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) reactor for deposition of device quality layers. This is accomplished by reacting tri-methyl (-ethyl) indium, tri-methyl (-ethyl) gallium, and/or tri-methyl (-ethyl) aluminum in the presence of ammonia (NH3) in nitrogen and/or hydrogen carrier gas, at elevated temperatures (500° C. to 1000° C.). The ratio of precursors is selected in order to provide a close lattice match to the InGaN template, and can be controlled by monitoring of mass flow controllers (MFCs), or growth temperature, or by in situ wafer bow measurements. Typically, an n-type InGaN layer is deposited first. The n-type characteristic may be achieved unintentionally (i.e., background oxygen) or intentionally by introducing donor species (e.g., Si via silane). Then, an InGaN or AlGaInN active layer structure is deposited. A common active layer structure is a multiple-quantum-well structure. The light-emitting layers are grown with a higher InN mole fraction than the template and the barrier layers (if any) separating the light-emitting layers. The active region may be undoped, n-type doped, or p-type doped. The p-type characteristic is typically achieved by introducing acceptor species (e.g., Mg via Cp2Mg). After the active layers are deposited, a spacer layer may be provided, before growing the p-type layers. The p-type layers may include an InGaN, GaN, AlGaN, or AlGaInN “electron blocking” layer to assist in carrier confinement in the active layers during device operation. After the electron blocking layer, a p-type InGaN layer is grown, followed by an InGaN or GaN p+ contact layer. Typically, after MOCVD growth, the entire structure is annealed at elevated temperature to activate the p-type layers through redistribution of hydrogen which has been grown into the crystal.
- A device structure is illustrated schematically in
comparison chart 1100 ofFIG. 11 . The top illustration (seefeatures - Referring to the bottom illustration (see
features 1108 1110, and 1112), and in accordance with the present disclosure, the InGaN template is chosen to provide larger in-plane lattice constant than that of GaN, providing for a strain-compensated design, wherein compressive and tensile stress are balanced out so that the entire crystal structure has strong mechanical integrity. This results in more design freedom, higher crystal quality, and better performance and reliability in devices. - In certain embodiments, the active layer is designed so that the InGaN template is substantially transparent with respect to the wavelength(s) of light emitted by the active layer. For example, if the composition of the InGaN substrate is specified by InyGa1-yN, where 0.05 5≤y≤1, and the composition of the active layer is designated by InxGa1-xN, where 0.05≤x≤1, x may be chosen to be greater than y by at least about 0.01, at least about 0.02, or at least about 0.05. The resulting compressive strain may be compensated by tensile strain associated with GaN, AlN, AlInGaN, or InzGa1-zN, where 0.0≤z≤y, barrier layers, electron-blocking layers, p-type layers, and the like. Of course, many quaternary (AlInGaN) compositions may be suitable for selecting a strain state while providing desired bandgap engineering for the device layer stack.
- In certain embodiments, the InGaN template is conductive and a vertical light-emitting device may be fabricated, in which case an ohmic contact electrode is made to the back of the InGaN template. If a lateral or flip-chip device is desired, the n-type electrode is provided after etching through the p-type and active layers down to the n-type epitaxial or n-type InGaN template layers. Suitable n-type ohmic contact metallizations include Ti and Al, and combinations thereof. The p-type electrode is provided on the p+ contact layer. Suitable p-type ohmic contact metallizations include Ni, Au, Pt, Pd, and Ag, and combinations thereof. For light-emitting diodes (LEDs), reflective metallizations are sometimes preferred.
- In the case of LEDs, extraction features may be incorporated into one of more exposed surfaces of the wafer. Extraction features may include roughened aspects as well as ordered texturing, including photonic crystal structures. After metal patterning and extraction feature implementation, the wafer may be diced into multiple LED chips, by means such as laser scribe and break, diamond tool scribe and break, sawing, etc. After dicing, further extraction features may be incorporated into the chip side surfaces, by means such as wet chemical etching.
- In the case of laser diodes, the wafer may be laser scribed and broken into bars to provide mirror facets for multiple laser stripes. The mirror facets may be coated to provide high-reflectivity or anti-reflection properties, to optimize total laser light output. Then, the individual laser diode chips may be obtained in a further singulation step, which may include another scribe and break step.
- After dicing, the light-emitting device is packaged into a suitable housing, and electrical connections are made to the n and p ohmic contacts electrodes. Thermal management is provided by providing a thermally conductive path from the active layers to the package housing. Optical encapsulation and/or lensing may be provided by primary optics comprising, for example, transparent materials such as silicones or glass. The final packaged device may be then incorporated into a solid state lighting product such as a lamp, luminaire, or light engine for displays.
- The present disclosure is applicable to various crystal orientations. For example, the growth substrate maybe be polar (+c or −c plane), non-polar (a or m plane), or semi-polar (e.g., 11−2±2, 10−1±1, 20−2±1, 30−3±1, 30−3±2, etc.), which will provide for an InGaN template of similar orientation. This allows one to utilize the benefits of the chosen plane (e.g., polarization field reduction) for the InGaN device.
- In the foregoing specification, the disclosure has been described with reference to specific embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the disclosure. For example, the above-described process flows are described with reference to a particular ordering of process actions. However, the ordering of many of the described process actions may be changed without affecting the scope or operation of the disclosure. The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than restrictive sense. In the foregoing specification, the disclosure has been described with reference to specific embodiments thereof.
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---|---|---|---|---|
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US20110182056A1 (en) * | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
JP6530905B2 (en) * | 2014-11-13 | 2019-06-12 | 古河機械金属株式会社 | Single crystal semiconductor layer, free-standing substrate and method for manufacturing laminated structure |
US9595958B1 (en) * | 2015-09-11 | 2017-03-14 | Fuji Electric Co., Ltd. | Semiconductor device and driving method for the same |
US10396240B2 (en) * | 2015-10-08 | 2019-08-27 | Ostendo Technologies, Inc. | III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same |
KR20190019539A (en) | 2017-08-18 | 2019-02-27 | 삼성전자주식회사 | Light emitting device and light emitting device package |
JP6826627B2 (en) * | 2019-04-03 | 2021-02-03 | 古河機械金属株式会社 | Single crystal semiconductor layer, self-supporting substrate, laminated structure and manufacturing method thereof |
CN114717535B (en) * | 2022-03-21 | 2023-07-14 | 太原理工大学 | Method for preparing wurtzite InGaN nanorods on silicon substrate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070072324A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | Substrate for growing a III-V light emitting device |
US20090309105A1 (en) * | 2008-06-04 | 2009-12-17 | Edward Letts | Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth |
US7727333B1 (en) * | 2006-03-27 | 2010-06-01 | Technologies And Devices International, Inc. | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
US20110244663A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
US20120320581A1 (en) * | 2011-05-16 | 2012-12-20 | Rogers John A | Thermally Managed LED Arrays Assembled by Printing |
US20140042447A1 (en) * | 2012-08-10 | 2014-02-13 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
Family Cites Families (416)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3283143A (en) | 1963-11-12 | 1966-11-01 | Marshall L Gosnell | Fog lens |
US3621233A (en) | 1968-11-08 | 1971-11-16 | Harry Ferdinand Jr | Removably attached vehicular headlamp glare-diffusing filter |
US3647522A (en) | 1970-04-29 | 1972-03-07 | Motorola Inc | Method of reclaiming and coating phosphor |
US3922527A (en) | 1974-12-26 | 1975-11-25 | Nat Forge Co | Temperature control apparatus |
US4065688A (en) | 1977-03-28 | 1977-12-27 | Westinghouse Electric Corporation | High-pressure mercury-vapor discharge lamp having a light output with incandescent characteristics |
US4225904A (en) | 1978-05-18 | 1980-09-30 | Bill Linder | Fog filter for headlights |
US4350560A (en) | 1981-08-07 | 1982-09-21 | Ferrofluidics Corporation | Apparatus for and method of handling crystals from crystal-growing furnaces |
CA1210132A (en) | 1982-09-16 | 1986-08-19 | Tadao Kubodera | Television receiver |
DE3624934A1 (en) | 1986-07-23 | 1988-01-28 | Dynamit Nobel Ag | AT HIGH TEMPERATURES, CONSTANT CATALYST MOLDED BODIES AND METHOD FOR THE PRODUCTION THEREOF |
US5142387A (en) | 1990-04-11 | 1992-08-25 | Mitsubishi Denki Kabushiki Kaisha | Projection-type display device having light source means including a first and second concave mirrors |
US5005109A (en) | 1990-07-30 | 1991-04-02 | Carleton Roland A | Detachable amber lens for a vehicle |
US5679977A (en) | 1990-09-24 | 1997-10-21 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
US5169486A (en) | 1991-03-06 | 1992-12-08 | Bestal Corporation | Crystal growth apparatus and process |
US5157466A (en) | 1991-03-19 | 1992-10-20 | Conductus, Inc. | Grain boundary junctions in high temperature superconductor films |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5331654A (en) | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
JPH06267846A (en) | 1993-03-10 | 1994-09-22 | Canon Inc | Diamond electronic device and its manufacture |
JPH06334215A (en) | 1993-05-18 | 1994-12-02 | Daido Steel Co Ltd | Surface emission led |
JP3623001B2 (en) | 1994-02-25 | 2005-02-23 | 住友電気工業株式会社 | Method for forming single crystalline thin film |
JP3538275B2 (en) | 1995-02-23 | 2004-06-14 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JPH0982587A (en) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | Preparation of nonsquare electronic chip |
JPH09199756A (en) | 1996-01-22 | 1997-07-31 | Toshiba Corp | Reflection-type optical coupling system |
US6072197A (en) | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
IL117403A (en) | 1996-03-07 | 2000-06-29 | Rogozinksi Joseph | Systems for the prevention of traffic blinding |
US5764674A (en) | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
US6533874B1 (en) | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
EP0985007B2 (en) | 1997-02-24 | 2010-11-03 | Cabot Corporation | Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
US6069394A (en) | 1997-04-09 | 2000-05-30 | Matsushita Electronics Corporation | Semiconductor substrate, semiconductor device and method of manufacturing the same |
US5926493A (en) | 1997-05-20 | 1999-07-20 | Sdl, Inc. | Optical semiconductor device with diffraction grating structure |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
JPH10335750A (en) | 1997-06-03 | 1998-12-18 | Sony Corp | Semiconductor substrate and semiconductor device |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
CN1175473C (en) | 1997-10-30 | 2004-11-10 | 住友电气工业株式会社 | GaN signale crystalline substrate and method of producing the same |
US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
US7193246B1 (en) | 1998-03-12 | 2007-03-20 | Nichia Corporation | Nitride semiconductor device |
US6147953A (en) | 1998-03-25 | 2000-11-14 | Duncan Technologies, Inc. | Optical signal transmission apparatus |
US6195381B1 (en) | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
JPH11340507A (en) | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | Semiconductor light-emitting element and its manufacture |
JPH11340576A (en) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor device |
TW413956B (en) | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
WO2000011106A1 (en) | 1998-08-18 | 2000-03-02 | Nichia Corporation | Red light-emitting afterglow photoluminescence phosphor and afterglow lamp using the phosphor |
KR100304881B1 (en) | 1998-10-15 | 2001-10-12 | 구자홍 | GaN system compound semiconductor and method for growing crystal thereof |
US6413839B1 (en) | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
JP3496712B2 (en) | 1999-04-05 | 2004-02-16 | 日本電気株式会社 | Nitride compound semiconductor laser device and method of manufacturing the same |
EP1215730B9 (en) | 1999-09-07 | 2007-08-01 | Sixon Inc. | SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
JP2001160627A (en) | 1999-11-30 | 2001-06-12 | Toyoda Gosei Co Ltd | Group iii nitride compound semiconductor light emitting element |
US6452220B1 (en) | 1999-12-09 | 2002-09-17 | The Regents Of The University Of California | Current isolating epitaxial buffer layers for high voltage photodiode array |
JP2001177146A (en) | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | Triangular shape semiconductor element and manufacturing method therefor |
US6903376B2 (en) | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
WO2001064591A1 (en) | 2000-03-01 | 2001-09-07 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
KR100763827B1 (en) | 2000-06-08 | 2007-10-05 | 니치아 카가쿠 고교 가부시키가이샤 | Semiconductor laser device, and method of manufacturing the same |
JP2001356701A (en) | 2000-06-15 | 2001-12-26 | Fuji Photo Film Co Ltd | Optical element, light source unit and display device |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
JP3906653B2 (en) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | Image display device and manufacturing method thereof |
US6680959B2 (en) | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
AU2002235132A1 (en) | 2000-11-16 | 2002-05-27 | Emcore Corporation | Led packages having improved light extraction |
JP2002185085A (en) | 2000-12-12 | 2002-06-28 | Sharp Corp | Nitride-based semiconductor laser element and method of dividing chip |
JP4595198B2 (en) | 2000-12-15 | 2010-12-08 | ソニー株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
WO2002078096A1 (en) | 2001-03-23 | 2002-10-03 | Oriol, Inc. | TREATING N-TYPE GaN WITH A C12-BASED INDUCTIVELY COUPLED PLASMA BEFORE FORMATION OF OHMIC CONTACTS |
KR100906760B1 (en) | 2001-03-28 | 2009-07-09 | 니치아 카가쿠 고교 가부시키가이샤 | Nitride semiconductor device |
US6547249B2 (en) | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6939730B2 (en) | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
US6734530B2 (en) | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
JP3639807B2 (en) | 2001-06-27 | 2005-04-20 | キヤノン株式会社 | Optical element and manufacturing method |
JP2003031844A (en) | 2001-07-11 | 2003-01-31 | Sony Corp | Method of manufacturing semiconductor light emitting device |
WO2003010745A1 (en) | 2001-07-23 | 2003-02-06 | Genoa Technologies Ltd. | Display for simulation of printed material |
JP4055503B2 (en) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
JP5093740B2 (en) | 2001-07-26 | 2012-12-12 | 株式会社Ihi | Semiconductor crystal film growth method |
US6379985B1 (en) | 2001-08-01 | 2002-04-30 | Xerox Corporation | Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
JP3969029B2 (en) | 2001-08-03 | 2007-08-29 | ソニー株式会社 | Manufacturing method of semiconductor device |
EP2017901A1 (en) | 2001-09-03 | 2009-01-21 | Panasonic Corporation | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV |
US6616734B2 (en) | 2001-09-10 | 2003-09-09 | Nanotek Instruments, Inc. | Dynamic filtration method and apparatus for separating nano powders |
JP3801125B2 (en) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, method for crystal growth of single crystal gallium nitride, and method for manufacturing single crystal gallium nitride substrate |
US7303630B2 (en) | 2003-11-05 | 2007-12-04 | Sumitomo Electric Industries, Ltd. | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
JP3864870B2 (en) | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof |
US7556687B2 (en) | 2001-09-19 | 2009-07-07 | Sumitomo Electric Industries, Ltd. | Gallium nitride crystal substrate and method of producing same |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
JP4290358B2 (en) * | 2001-10-12 | 2009-07-01 | 住友電気工業株式会社 | Manufacturing method of semiconductor light emitting device |
KR100679387B1 (en) | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | Nitride semiconductor laser devise and manufacturing method thereof |
DE10161882A1 (en) | 2001-12-17 | 2003-10-02 | Siemens Ag | Thermally conductive thermoplastic compounds and the use thereof |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
WO2004061969A1 (en) | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy |
AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US6860628B2 (en) * | 2002-07-17 | 2005-03-01 | Jonas J. Robertson | LED replacement for fluorescent lighting |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
CA2495149A1 (en) | 2002-09-19 | 2004-04-01 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US6809781B2 (en) | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP5138145B2 (en) | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | Phosphor laminate structure and light source using the same |
US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US8089097B2 (en) | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
TWI230978B (en) | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
US7118438B2 (en) | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
JP3778186B2 (en) | 2003-02-18 | 2006-05-24 | 株式会社豊田自動織機 | Light guide plate |
US6864641B2 (en) | 2003-02-20 | 2005-03-08 | Visteon Global Technologies, Inc. | Method and apparatus for controlling light emitting diodes |
JP2004273798A (en) | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | Light emitting device |
EP2596948B1 (en) | 2003-03-10 | 2020-02-26 | Toyoda Gosei Co., Ltd. | Method of making a semiconductor device |
JP2004304111A (en) | 2003-04-01 | 2004-10-28 | Sharp Corp | Multi-wavelength laser device |
WO2004090202A1 (en) | 2003-04-03 | 2004-10-21 | Mitsubishi Chemical Corporation | Zinc oxide single crystal |
KR101148332B1 (en) | 2003-04-30 | 2012-05-25 | 크리, 인코포레이티드 | High powered light emitter packages with compact optics |
US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US6989807B2 (en) | 2003-05-19 | 2006-01-24 | Add Microtech Corp. | LED driving device |
DE20308495U1 (en) | 2003-05-28 | 2004-09-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Conversion LED |
JP3098262U (en) | 2003-06-02 | 2004-02-26 | 有限会社トダ精光 | Accessory lens |
TWI344706B (en) | 2003-06-04 | 2011-07-01 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
US7622742B2 (en) | 2003-07-03 | 2009-11-24 | Epivalley Co., Ltd. | III-nitride compound semiconductor light emitting device |
WO2005022654A2 (en) | 2003-08-28 | 2005-03-10 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
JP2005085942A (en) | 2003-09-08 | 2005-03-31 | Seiko Epson Corp | Optical module and optical transmitter |
US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US6942360B2 (en) | 2003-10-01 | 2005-09-13 | Enertron, Inc. | Methods and apparatus for an LED light engine |
US7348600B2 (en) | 2003-10-20 | 2008-03-25 | Nichia Corporation | Nitride semiconductor device, and its fabrication process |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7009215B2 (en) | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7128849B2 (en) | 2003-10-31 | 2006-10-31 | General Electric Company | Phosphors containing boron and metals of Group IIIA and IIIB |
US7329887B2 (en) | 2003-12-02 | 2008-02-12 | 3M Innovative Properties Company | Solid state light device |
EP1697983B1 (en) | 2003-12-09 | 2012-06-13 | The Regents of The University of California | Highly efficient gallium nitride based light emitting diodes having surface roughening |
US7318651B2 (en) | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US20060038542A1 (en) | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US7384481B2 (en) | 2003-12-29 | 2008-06-10 | Translucent Photonics, Inc. | Method of forming a rare-earth dielectric layer |
EP1733077B1 (en) | 2004-01-15 | 2018-04-18 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
TWI229463B (en) | 2004-02-02 | 2005-03-11 | South Epitaxy Corp | Light-emitting diode structure with electro-static discharge protection |
US7165896B2 (en) | 2004-02-12 | 2007-01-23 | Hymite A/S | Light transmitting modules with optical power monitoring |
US7675231B2 (en) | 2004-02-13 | 2010-03-09 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting diode display device comprising a high temperature resistant overlay |
ZA200607295B (en) | 2004-03-03 | 2008-05-28 | Johnson & Son Inc S C | Led light bulb with active ingredient emission |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
US7420218B2 (en) | 2004-03-18 | 2008-09-02 | Matsushita Electric Industrial Co., Ltd. | Nitride based LED with a p-type injection region |
US7083302B2 (en) | 2004-03-24 | 2006-08-01 | J. S. Technology Co., Ltd. | White light LED assembly |
KR100568297B1 (en) | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
JP4671617B2 (en) * | 2004-03-30 | 2011-04-20 | 三洋電機株式会社 | Integrated semiconductor laser device |
US7285801B2 (en) | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
US7061026B2 (en) | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
EP1598681A3 (en) | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Optical component with curved surface and multi-layer coating |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
US7019325B2 (en) | 2004-06-16 | 2006-03-28 | Exalos Ag | Broadband light emitting device |
WO2006004337A1 (en) | 2004-06-30 | 2006-01-12 | Seoul Opto-Device Co., Ltd. | Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same |
WO2006005062A2 (en) | 2004-06-30 | 2006-01-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
US7252408B2 (en) | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
KR20070058465A (en) | 2004-08-06 | 2007-06-08 | 미쓰비시 가가꾸 가부시키가이샤 | Nitride semiconductor single crystal including ga, method for manufacturing the same, and substrate and device using the crystal |
JP2006086516A (en) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | Method for manufacturing semiconductor light emitting device |
JP2006073076A (en) | 2004-09-01 | 2006-03-16 | Fujinon Corp | Object optical system for optical recording medium, and optical pickup device using the same |
US7737459B2 (en) | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7724321B2 (en) | 2004-09-24 | 2010-05-25 | Epistar Corporation | Liquid crystal display |
EP2573206B1 (en) | 2004-09-27 | 2014-06-11 | Gallium Enterprises Pty Ltd | Method for growing a group (iii) metal nitride film |
JP2006108435A (en) | 2004-10-06 | 2006-04-20 | Sumitomo Electric Ind Ltd | Nitride semiconductor wafer |
KR100661708B1 (en) | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
US20060097385A1 (en) | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7858408B2 (en) | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP4581646B2 (en) | 2004-11-22 | 2010-11-17 | パナソニック電工株式会社 | Light emitting diode lighting device |
US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
US7751455B2 (en) | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
KR100661709B1 (en) | 2004-12-23 | 2006-12-26 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
US7199918B2 (en) | 2005-01-07 | 2007-04-03 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US8318519B2 (en) | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US7897420B2 (en) | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
EP1681712A1 (en) | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
US7221044B2 (en) | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
US7704324B2 (en) | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7535028B2 (en) | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
US7081722B1 (en) | 2005-02-04 | 2006-07-25 | Kimlong Huynh | Light emitting diode multiphase driver circuit and method |
GB2423144B (en) | 2005-02-10 | 2009-08-05 | Richard Liddle | Lighting system |
US7868349B2 (en) | 2005-02-17 | 2011-01-11 | Lg Electronics Inc. | Light source apparatus and fabrication method thereof |
US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
US7872285B2 (en) | 2005-03-04 | 2011-01-18 | Sumitomo Electric Industries, Ltd. | Vertical gallium nitride semiconductor device and epitaxial substrate |
US20060204865A1 (en) | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
JP4104013B2 (en) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | LIGHT EMITTING DEVICE AND LIGHTING DEVICE |
JP5010108B2 (en) | 2005-03-25 | 2012-08-29 | 株式会社沖データ | Semiconductor composite device, print head, and image forming apparatus using the same |
US7483466B2 (en) | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
US7574791B2 (en) | 2005-05-10 | 2009-08-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method to fabricate side shields for a magnetic sensor |
JP4636501B2 (en) | 2005-05-12 | 2011-02-23 | 株式会社沖データ | Semiconductor device, print head, and image forming apparatus |
US7358543B2 (en) | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
WO2006130696A2 (en) | 2005-06-01 | 2006-12-07 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices |
KR20060127743A (en) | 2005-06-06 | 2006-12-13 | 스미토모덴키고교가부시키가이샤 | Nitride semiconductor substrate and method for manufacturing the same |
US20060288928A1 (en) | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
US7279040B1 (en) | 2005-06-16 | 2007-10-09 | Fairfield Crystal Technology, Llc | Method and apparatus for zinc oxide single crystal boule growth |
WO2007002151A2 (en) | 2005-06-21 | 2007-01-04 | The Regents Of The University Of California | Packaging technique for the fabrication of polarized light emitting diodes |
US20100220262A1 (en) | 2008-08-05 | 2010-09-02 | The Regents Of The University Of California | Linearly polarized backlight source in conjunction with polarized phosphor emission screens for use in liquid crystal displays |
US8148713B2 (en) | 2008-04-04 | 2012-04-03 | The Regents Of The University Of California | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
US7887631B2 (en) | 2005-06-24 | 2011-02-15 | The Gemesis Corporation | System and high pressure, high temperature apparatus for producing synthetic diamonds |
US7799236B2 (en) | 2005-08-30 | 2010-09-21 | Lg Chem, Ltd. | Gathering method and apparatus of powder separated soluble component |
JP4656410B2 (en) | 2005-09-05 | 2011-03-23 | 住友電気工業株式会社 | Manufacturing method of nitride semiconductor device |
EP1938385B1 (en) | 2005-09-07 | 2014-12-03 | Cree, Inc. | Transistors with fluorine treatment |
JP2007110090A (en) | 2005-09-13 | 2007-04-26 | Sony Corp | Garium-nitride semiconductor light emitting element, light emitting device, image display device, planar light source device, and liquid crystal display device assembly |
JP2007081180A (en) | 2005-09-15 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
JP2007087973A (en) | 2005-09-16 | 2007-04-05 | Rohm Co Ltd | Manufacture of nitride semiconductor device, method for manufacturing nitride semiconductor device, and nitride semiconductor light-emitting device obtained by the same |
US8661660B2 (en) | 2005-09-22 | 2014-03-04 | The Artak Ter-Hovhanissian Patent Trust | Process for manufacturing LED lighting with integrated heat sink |
US20080099777A1 (en) | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
US20070096239A1 (en) | 2005-10-31 | 2007-05-03 | General Electric Company | Semiconductor devices and methods of manufacture |
EP1788619A3 (en) | 2005-11-18 | 2009-09-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4696886B2 (en) | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | Method for manufacturing self-supporting gallium nitride single crystal substrate and method for manufacturing nitride semiconductor device |
JP5191650B2 (en) | 2005-12-16 | 2013-05-08 | シャープ株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
US7148515B1 (en) | 2006-01-07 | 2006-12-12 | Tyntek Corp. | Light emitting device having integrated rectifier circuit in substrate |
WO2007083647A1 (en) | 2006-01-18 | 2007-07-26 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor light-emitting device |
US7528422B2 (en) | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR100896576B1 (en) | 2006-02-24 | 2009-05-07 | 삼성전기주식회사 | Nitride-based semiconductor light emitting device and method of manufacturing the same |
JP4660400B2 (en) | 2006-03-14 | 2011-03-30 | シャープ株式会社 | Manufacturing method of nitride semiconductor laser device |
WO2007109153A2 (en) | 2006-03-16 | 2007-09-27 | Radpax, Inc. | Rapid film bonding using pattern printed adhesive |
KR100765075B1 (en) | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | Semiconductor light-emitting device and manufacturing method thereof |
JP2007273492A (en) | 2006-03-30 | 2007-10-18 | Mitsubishi Electric Corp | Nitride semiconductor device and its manufacturing method |
US20070247852A1 (en) | 2006-04-21 | 2007-10-25 | Xiaoping Wang | Multi chip LED lamp |
KR100735496B1 (en) | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | Method for forming the vertically structured gan type light emitting diode device |
US7480322B2 (en) | 2006-05-15 | 2009-01-20 | The Regents Of The University Of California | Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser |
JP4819577B2 (en) | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | Pattern transfer method and pattern transfer apparatus |
JP4854566B2 (en) | 2006-06-15 | 2012-01-18 | シャープ株式会社 | Nitride semiconductor light emitting device manufacturing method and nitride semiconductor light emitting device |
EP2041802B1 (en) | 2006-06-23 | 2013-11-13 | LG Electronics Inc. | Light emitting diode having vertical topology and method of making the same |
US20090273005A1 (en) | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP4957110B2 (en) | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | Light emitting device |
CN101554089A (en) | 2006-08-23 | 2009-10-07 | 科锐Led照明科技公司 | Lighting device and lighting method |
TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
US8362603B2 (en) | 2006-09-14 | 2013-01-29 | Luminus Devices, Inc. | Flexible circuit light-emitting structures |
JP2008084973A (en) | 2006-09-26 | 2008-04-10 | Stanley Electric Co Ltd | Semiconductor light-emitting device |
JP4246242B2 (en) | 2006-09-27 | 2009-04-02 | 三菱電機株式会社 | Semiconductor light emitting device |
JP2008109066A (en) | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | Light emitting element |
US7714348B2 (en) | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
US7642122B2 (en) | 2006-10-08 | 2010-01-05 | Momentive Performance Materials Inc. | Method for forming nitride crystals |
JP2008135697A (en) | 2006-10-23 | 2008-06-12 | Rohm Co Ltd | Semiconductor light-emitting element |
TWI371870B (en) | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
JP5105160B2 (en) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | Transistor |
WO2008060349A2 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
TWI349902B (en) | 2006-11-16 | 2011-10-01 | Chunghwa Picture Tubes Ltd | Controlling apparatuses for controlling a plurality of led strings and related light modules |
US7598104B2 (en) | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
US7700962B2 (en) | 2006-11-28 | 2010-04-20 | Luxtaltek Corporation | Inverted-pyramidal photonic crystal light emitting device |
TWI533351B (en) | 2006-12-11 | 2016-05-11 | 美國加利福尼亞大學董事會 | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
JP2010512660A (en) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Nonpolar and semipolar light emitting devices |
US20080217745A1 (en) | 2006-12-19 | 2008-09-11 | Sumitomo Electric Industries, Ltd. | Nitride Semiconductor Wafer |
US8742251B2 (en) | 2006-12-20 | 2014-06-03 | Jds Uniphase Corporation | Multi-segment photovoltaic power converter with a center portion |
KR101203932B1 (en) | 2006-12-28 | 2012-11-23 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Sapphire substrates and methods of making same |
JP2008172040A (en) | 2007-01-12 | 2008-07-24 | Sony Corp | Semiconductor light emitting element, method of manufacturing semiconductor light emitting element, backlight, display and electronic equipment |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
EP3848970A1 (en) | 2007-01-22 | 2021-07-14 | Cree, Inc. | Multiple light emitting diode emitter |
JP2008198650A (en) | 2007-02-08 | 2008-08-28 | Toshiba Discrete Technology Kk | Semiconductor light-emitting element and semiconductor light-emitting device |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
JP5363996B2 (en) | 2007-02-12 | 2013-12-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Al (x) Ga (1-x) N cladding-free nonpolar III-nitride based laser diode and light emitting diode |
US8541869B2 (en) | 2007-02-12 | 2013-09-24 | The Regents Of The University Of California | Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates |
US7652305B2 (en) | 2007-02-23 | 2010-01-26 | Corning Incorporated | Methods and apparatus to improve frit-sealed glass package |
US7768020B2 (en) | 2007-03-13 | 2010-08-03 | Seoul Opto Device Co., Ltd. | AC light emitting diode |
KR100974923B1 (en) | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | Light emitting diode |
JP5032171B2 (en) | 2007-03-26 | 2012-09-26 | 株式会社東芝 | Semiconductor light emitting device, method for manufacturing the same, and light emitting device |
TWI392111B (en) | 2007-04-11 | 2013-04-01 | Everlight Electronics Co Ltd | Phosphor coating method for led device |
US8088670B2 (en) | 2007-04-18 | 2012-01-03 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing bonded substrate with sandblast treatment |
CN100580905C (en) | 2007-04-20 | 2010-01-13 | 晶能光电(江西)有限公司 | Method of obtaining high-quality boundary for manufacturing semiconductor device on divided substrate |
JP2008311640A (en) | 2007-05-16 | 2008-12-25 | Rohm Co Ltd | Semiconductor laser diode |
JP2008285364A (en) | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN SUBSTRATE, AND EPITAXIAL SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT USING THE SAME |
KR100867551B1 (en) | 2007-05-18 | 2008-11-10 | 삼성전기주식회사 | Led array driving apparatus |
JP4614988B2 (en) | 2007-05-31 | 2011-01-19 | シャープ株式会社 | Nitride-based semiconductor laser device and manufacturing method thereof |
US20080303033A1 (en) | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
JP5118392B2 (en) | 2007-06-08 | 2013-01-16 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
GB2450377A (en) | 2007-06-23 | 2008-12-24 | Ian Charles Williamson | Vehicle load and parking warning system |
JP4781323B2 (en) | 2007-07-12 | 2011-09-28 | 三菱電機株式会社 | Directional coupler |
JP5041902B2 (en) | 2007-07-24 | 2012-10-03 | 三洋電機株式会社 | Semiconductor laser element |
US7733571B1 (en) | 2007-07-24 | 2010-06-08 | Rockwell Collins, Inc. | Phosphor screen and displays systems |
US20090032828A1 (en) * | 2007-08-03 | 2009-02-05 | Philips Lumileds Lighting Company, Llc | III-Nitride Device Grown on Edge-Dislocation Template |
JP5044329B2 (en) | 2007-08-31 | 2012-10-10 | 株式会社東芝 | Light emitting device |
JP4584293B2 (en) | 2007-08-31 | 2010-11-17 | 富士通株式会社 | Nitride semiconductor device, Doherty amplifier, drain voltage control amplifier |
JP2009065048A (en) | 2007-09-07 | 2009-03-26 | Rohm Co Ltd | Semiconductor light-emitting element and method of manufacturing the same |
WO2009035648A1 (en) | 2007-09-14 | 2009-03-19 | Kyma Technologies, Inc. | Non-polar and semi-polar gan substrates, devices, and methods for making them |
US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
KR101391326B1 (en) | 2007-09-19 | 2014-05-07 | 샤프 가부시키가이샤 | Color conversion filter, and process for producing color conversion filter and organic el display |
US8058663B2 (en) | 2007-09-26 | 2011-11-15 | Iii-N Technology, Inc. | Micro-emitter array based full-color micro-display |
JP2009081374A (en) | 2007-09-27 | 2009-04-16 | Rohm Co Ltd | Semiconductor light-emitting device |
US8783887B2 (en) | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
US20110017298A1 (en) | 2007-11-14 | 2011-01-27 | Stion Corporation | Multi-junction solar cell devices |
US7985970B2 (en) | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
KR20100077213A (en) | 2007-11-19 | 2010-07-07 | 파나소닉 주식회사 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
EP2218114A4 (en) | 2007-11-30 | 2014-12-24 | Univ California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US20090140279A1 (en) | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
JP5099763B2 (en) | 2007-12-18 | 2012-12-19 | 国立大学法人東北大学 | Substrate manufacturing method and group III nitride semiconductor crystal |
DE102008012859B4 (en) | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laser light source with a filter structure |
US20090173958A1 (en) | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
US8337029B2 (en) | 2008-01-17 | 2012-12-25 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
GB0801509D0 (en) | 2008-01-28 | 2008-03-05 | Photonstar Led Ltd | Light emitting system with optically transparent thermally conductive element |
US20090226139A1 (en) | 2008-01-31 | 2009-09-10 | Coretek Opto Corp. | Optoelectronic component and optical subassembly for optical communication |
JP2009200178A (en) | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | Semiconductor light-emitting device |
JP5053893B2 (en) | 2008-03-07 | 2012-10-24 | 住友電気工業株式会社 | Method for fabricating a nitride semiconductor laser |
KR101092079B1 (en) | 2008-04-24 | 2011-12-12 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
JP5207812B2 (en) | 2008-04-25 | 2013-06-12 | 京セラ株式会社 | Light emitting device and method for manufacturing light emitting device |
JP2009283912A (en) | 2008-04-25 | 2009-12-03 | Sanyo Electric Co Ltd | Nitride-based semiconductor device and method of manufacturing the same |
US20110180781A1 (en) | 2008-06-05 | 2011-07-28 | Soraa, Inc | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090309127A1 (en) | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
TWI384898B (en) | 2008-06-18 | 2013-02-01 | Delta Electronics Inc | Dimmable led driving circuit |
JP5345363B2 (en) | 2008-06-24 | 2013-11-20 | シャープ株式会社 | Light emitting device |
US20100006873A1 (en) | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN101621101A (en) | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | LED and production method thereof |
US20120000415A1 (en) | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
JP5166146B2 (en) | 2008-07-10 | 2013-03-21 | スタンレー電気株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
JP4475358B1 (en) | 2008-08-04 | 2010-06-09 | 住友電気工業株式会社 | GaN-based semiconductor optical device, method for manufacturing GaN-based semiconductor optical device, and epitaxial wafer |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
KR101332794B1 (en) | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US20100117118A1 (en) | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
JP4599442B2 (en) | 2008-08-27 | 2010-12-15 | 株式会社東芝 | Manufacturing method of semiconductor light emitting device |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
WO2010029775A1 (en) | 2008-09-11 | 2010-03-18 | 住友電気工業株式会社 | Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device |
US8188486B2 (en) | 2008-09-16 | 2012-05-29 | Osram Sylvania Inc. | Optical disk for lighting module |
US20100295088A1 (en) | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
JP2010098068A (en) | 2008-10-15 | 2010-04-30 | Showa Denko Kk | Light emitting diode, manufacturing method thereof, and lamp |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
JP2010118647A (en) | 2008-10-17 | 2010-05-27 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, method of manufacturing nitride-based semiconductor light emitting element, and light emitting device |
JP5530620B2 (en) | 2008-10-30 | 2014-06-25 | 日立コンシューマエレクトロニクス株式会社 | Liquid crystal display |
JP2012507874A (en) | 2008-10-31 | 2012-03-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Optoelectronic devices based on nonpolar or semipolar AlInN and AlInGaN alloys |
US8017415B2 (en) | 2008-11-05 | 2011-09-13 | Goldeneye, Inc. | Dual sided processing and devices based on freestanding nitride and zinc oxide films |
US8062916B2 (en) | 2008-11-06 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Series connected flip chip LEDs with growth substrate removed |
US20100117106A1 (en) | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
TW201114003A (en) | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US8169135B2 (en) | 2008-12-17 | 2012-05-01 | Lednovation, Inc. | Semiconductor lighting device with wavelength conversion on back-transferred light path |
US8044609B2 (en) | 2008-12-31 | 2011-10-25 | 02Micro Inc | Circuits and methods for controlling LCD backlights |
US7923741B1 (en) | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
US20110100291A1 (en) | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
US8651711B2 (en) | 2009-02-02 | 2014-02-18 | Apex Technologies, Inc. | Modular lighting system and method employing loosely constrained magnetic structures |
JP2010177651A (en) | 2009-02-02 | 2010-08-12 | Rohm Co Ltd | Semiconductor laser device |
US8309973B2 (en) | 2009-02-12 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based sub-mount for an opto-electronic device |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
TWI381556B (en) | 2009-03-20 | 2013-01-01 | Everlight Electronics Co Ltd | Light emitting diode package structure and manufacturing method thereof |
US7838878B2 (en) | 2009-03-24 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning |
US8252662B1 (en) | 2009-03-28 | 2012-08-28 | Soraa, Inc. | Method and structure for manufacture of light emitting diode devices using bulk GaN |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
DE112010001615T5 (en) | 2009-04-13 | 2012-08-02 | Soraa, Inc. | Structure of an optical element using GaN substrates for laser applications |
US8455332B2 (en) | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
JP5178623B2 (en) | 2009-05-08 | 2013-04-10 | サンユレック株式会社 | Manufacturing method of lighting device |
US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
CN105824179B (en) | 2009-05-29 | 2018-01-30 | 天空激光二极管有限公司 | A kind of optical projection system |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US8749030B2 (en) | 2009-05-29 | 2014-06-10 | Soraa, Inc. | Surface morphology of non-polar gallium nitride containing substrates |
US8324840B2 (en) | 2009-06-04 | 2012-12-04 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
US8410717B2 (en) | 2009-06-04 | 2013-04-02 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
TW201123530A (en) | 2009-06-05 | 2011-07-01 | Univ California | Long wavelength nonpolar and semipolar (Al,Ga,In) N based laser diodes |
EP2448026A4 (en) | 2009-06-26 | 2013-08-14 | Asahi Rubber Inc | White color reflecting material and process for production thereof |
KR100942234B1 (en) | 2009-07-23 | 2010-02-12 | (주)로그인디지탈 | Illumination system of using light emitting diode |
US8080466B2 (en) * | 2009-08-10 | 2011-12-20 | Applied Materials, Inc. | Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system |
US20110038154A1 (en) | 2009-08-11 | 2011-02-17 | Jyotirmoy Chakravarty | System and methods for lighting and heat dissipation |
JP5044692B2 (en) | 2009-08-17 | 2012-10-10 | 株式会社東芝 | Nitride semiconductor light emitting device |
US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
WO2011022730A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations |
WO2011022724A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface |
JP5310382B2 (en) * | 2009-08-24 | 2013-10-09 | 住友電気工業株式会社 | Group III nitride semiconductor optical device and method for fabricating group III nitride semiconductor optical device |
US8350273B2 (en) | 2009-08-31 | 2013-01-08 | Infineon Technologies Ag | Semiconductor structure and a method of forming the same |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US20130313516A1 (en) | 2012-05-04 | 2013-11-28 | Soraa, Inc. | Led lamps with improved quality of light |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8502465B2 (en) | 2009-09-18 | 2013-08-06 | Soraa, Inc. | Power light emitting diode and method with current density operation |
US20110068700A1 (en) | 2009-09-21 | 2011-03-24 | Suntec Enterprises | Method and apparatus for driving multiple LED devices |
US20110186887A1 (en) | 2009-09-21 | 2011-08-04 | Soraa, Inc. | Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
JP5387302B2 (en) | 2009-09-30 | 2014-01-15 | 住友電気工業株式会社 | Group III nitride semiconductor laser device and method of manufacturing group III nitride semiconductor laser device |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
US8269245B1 (en) | 2009-10-30 | 2012-09-18 | Soraa, Inc. | Optical device with wavelength selective reflector |
CN102598270A (en) | 2009-11-03 | 2012-07-18 | 加利福尼亚大学董事会 | High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution |
JP2013510431A (en) | 2009-11-03 | 2013-03-21 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Superluminescent diodes by crystallographic etching. |
US7893445B2 (en) | 2009-11-09 | 2011-02-22 | Cree, Inc. | Solid state emitter package including red and blue emitters |
TW201118946A (en) | 2009-11-24 | 2011-06-01 | Chun-Yen Chang | Method for manufacturing free-standing substrate and free-standing light-emitting device |
US8187901B2 (en) * | 2009-12-07 | 2012-05-29 | Micron Technology, Inc. | Epitaxial formation support structures and associated methods |
US8105852B2 (en) | 2010-01-15 | 2012-01-31 | Koninklijke Philips Electronics N.V. | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate |
JP5251893B2 (en) | 2010-01-21 | 2013-07-31 | 日立電線株式会社 | Method for producing conductive group III nitride crystal and method for producing conductive group III nitride substrate |
US20110186874A1 (en) | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US20110182056A1 (en) | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US20110215348A1 (en) | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US8933636B2 (en) | 2010-02-03 | 2015-01-13 | Citizen Holdings Co., Ltd. | LED driving circuit |
US8716049B2 (en) | 2010-02-23 | 2014-05-06 | Applied Materials, Inc. | Growth of group III-V material layers by spatially confined epitaxy |
US8872445B2 (en) | 2010-02-26 | 2014-10-28 | Citizen Holdings Co., Ltd. | LED driving circuit |
TWI560963B (en) | 2010-03-04 | 2016-12-01 | Univ California | Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction |
US20110247556A1 (en) | 2010-03-31 | 2011-10-13 | Soraa, Inc. | Tapered Horizontal Growth Chamber |
JP2011243963A (en) | 2010-04-21 | 2011-12-01 | Mitsubishi Chemicals Corp | Semiconductor light-emitting device and method of manufacturing the same |
KR101064020B1 (en) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
CN102237454A (en) | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | Semiconductor photoelectric element and manufacturing method thereof |
US8431942B2 (en) | 2010-05-07 | 2013-04-30 | Koninklijke Philips Electronics N.V. | LED package with a rounded square lens |
US8459814B2 (en) | 2010-05-12 | 2013-06-11 | National Taiwan University Of Science And Technology | White-light emitting devices with stabilized dominant wavelength |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8293551B2 (en) | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20110317397A1 (en) | 2010-06-23 | 2011-12-29 | Soraa, Inc. | Quantum dot wavelength conversion for hermetically sealed optical devices |
US20120007102A1 (en) | 2010-07-08 | 2012-01-12 | Soraa, Inc. | High Voltage Device and Method for Optical Devices |
US9252330B2 (en) | 2010-08-06 | 2016-02-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light emitting element |
DE102010034913B4 (en) | 2010-08-20 | 2023-03-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting component and method for producing the radiation-emitting component |
US8729559B2 (en) * | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8597967B1 (en) | 2010-11-17 | 2013-12-03 | Soraa, Inc. | Method and system for dicing substrates containing gallium and nitrogen material |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8040071B2 (en) | 2010-12-14 | 2011-10-18 | O2Micro, Inc. | Circuits and methods for driving light sources |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8525396B2 (en) | 2011-02-11 | 2013-09-03 | Soraa, Inc. | Illumination source with direct die placement |
US8618742B2 (en) | 2011-02-11 | 2013-12-31 | Soraa, Inc. | Illumination source and manufacturing methods |
US8643257B2 (en) | 2011-02-11 | 2014-02-04 | Soraa, Inc. | Illumination source with reduced inner core size |
US8324835B2 (en) | 2011-02-11 | 2012-12-04 | Soraa, Inc. | Modular LED lamp and manufacturing methods |
KR102006007B1 (en) | 2011-04-19 | 2019-08-01 | 이동일 | LED Driving Apparatus and Driving Method Using the Same |
USD662899S1 (en) | 2011-08-15 | 2012-07-03 | Soraa, Inc. | Heatsink |
USD662900S1 (en) | 2011-08-15 | 2012-07-03 | Soraa, Inc. | Heatsink for LED |
CN202203727U (en) | 2011-08-16 | 2012-04-25 | 惠州元晖光电有限公司 | Optical engine with optical switching array |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
TWI466323B (en) | 2011-11-07 | 2014-12-21 | Ind Tech Res Inst | Light emitting diode |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US8752975B2 (en) | 2012-01-10 | 2014-06-17 | Michael Rubino | Multi-function telescopic flashlight with universally-mounted pivotal mirror |
US20130022758A1 (en) | 2012-01-27 | 2013-01-24 | Soraa, Inc. | Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications |
EP2823515A4 (en) | 2012-03-06 | 2015-08-19 | Soraa Inc | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
US8888332B2 (en) | 2012-06-05 | 2014-11-18 | Soraa, Inc. | Accessories for LED lamps |
US8829800B2 (en) | 2012-09-07 | 2014-09-09 | Cree, Inc. | Lighting component with independent DC-DC converters |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
-
2013
- 2013-10-15 US US14/054,234 patent/US9978904B2/en active Active
- 2013-10-16 JP JP2013215853A patent/JP2014090169A/en active Pending
-
2018
- 2018-05-22 US US15/986,253 patent/US20180269351A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070072324A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | Substrate for growing a III-V light emitting device |
US7727333B1 (en) * | 2006-03-27 | 2010-06-01 | Technologies And Devices International, Inc. | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
US20090309105A1 (en) * | 2008-06-04 | 2009-12-17 | Edward Letts | Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth |
US20110244663A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
US20120320581A1 (en) * | 2011-05-16 | 2012-12-20 | Rogers John A | Thermally Managed LED Arrays Assembled by Printing |
US20140042447A1 (en) * | 2012-08-10 | 2014-02-13 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
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US20140103356A1 (en) | 2014-04-17 |
US9978904B2 (en) | 2018-05-22 |
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