JP2022012558A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022012558A5 JP2022012558A5 JP2020114475A JP2020114475A JP2022012558A5 JP 2022012558 A5 JP2022012558 A5 JP 2022012558A5 JP 2020114475 A JP2020114475 A JP 2020114475A JP 2020114475 A JP2020114475 A JP 2020114475A JP 2022012558 A5 JP2022012558 A5 JP 2022012558A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- epitaxial growth
- iii nitride
- nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 55
- 150000004767 nitrides Chemical class 0.000 claims 34
- 239000013078 crystal Substances 0.000 claims 30
- 238000000034 method Methods 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 10
- 229910002601 GaN Inorganic materials 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 238000007789 sealing Methods 0.000 claims 5
- 239000000919 ceramic Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000005092 sublimation method Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020114475A JP7618401B2 (ja) | 2020-07-01 | 2020-07-01 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| KR1020227044577A KR20230031835A (ko) | 2020-07-01 | 2021-05-18 | 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 |
| US18/012,033 US20230257905A1 (en) | 2020-07-01 | 2021-05-18 | Large-diameter substrate for group-iii nitride epitaxial growth and method for producing the same |
| EP21831686.7A EP4177384A4 (en) | 2020-07-01 | 2021-05-18 | LARGE DIAMETER SUBSTRATE FOR EPITAXIAL GROWTH OF GROUP III NITRIDE AND PROCESS FOR PRODUCING SAME |
| PCT/JP2021/018734 WO2022004165A1 (ja) | 2020-07-01 | 2021-05-18 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| CN202180046066.2A CN115997050A (zh) | 2020-07-01 | 2021-05-18 | 大口径iii族氮化物系外延生长用基板及其制造方法 |
| TW110123734A TWI900595B (zh) | 2020-07-01 | 2021-06-29 | 大口徑ｉｉｉ族氮化物系磊晶成長用基板與其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020114475A JP7618401B2 (ja) | 2020-07-01 | 2020-07-01 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022012558A JP2022012558A (ja) | 2022-01-17 |
| JP2022012558A5 true JP2022012558A5 (enExample) | 2022-02-25 |
| JP7618401B2 JP7618401B2 (ja) | 2025-01-21 |
Family
ID=79315945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020114475A Active JP7618401B2 (ja) | 2020-07-01 | 2020-07-01 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230257905A1 (enExample) |
| EP (1) | EP4177384A4 (enExample) |
| JP (1) | JP7618401B2 (enExample) |
| KR (1) | KR20230031835A (enExample) |
| CN (1) | CN115997050A (enExample) |
| WO (1) | WO2022004165A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7484773B2 (ja) * | 2021-03-04 | 2024-05-16 | 信越半導体株式会社 | 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ |
| JP7657530B2 (ja) * | 2021-12-28 | 2025-04-07 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
| CN218351409U (zh) * | 2022-06-30 | 2023-01-20 | 苏州晶湛半导体有限公司 | 一种半导体结构 |
| JP2025007662A (ja) * | 2023-07-03 | 2025-01-17 | 信越半導体株式会社 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
| CN117476831B (zh) * | 2023-12-20 | 2024-03-19 | 青禾晶元(晋城)半导体材料有限公司 | Led外延片及其制备方法、led芯片及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60164248A (ja) | 1984-02-06 | 1985-08-27 | Toshiba Corp | 超音波診断装置 |
| JP2004336079A (ja) | 2004-08-16 | 2004-11-25 | Hoya Corp | 化合物単結晶の製造方法 |
| JP4565042B1 (ja) | 2009-04-22 | 2010-10-20 | 株式会社トクヤマ | Ｉｉｉ族窒化物結晶基板の製造方法 |
| US8580593B2 (en) | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
| EP2362412B1 (en) * | 2010-02-19 | 2020-04-08 | Samsung Electronics Co., Ltd. | Method of growing nitride semiconductor |
| US9105621B2 (en) * | 2012-12-20 | 2015-08-11 | Imec | Method for bonding of group III-nitride device-on-silicon and devices obtained thereof |
| JP2017114694A (ja) | 2015-12-21 | 2017-06-29 | 信越化学工業株式会社 | 化合物半導体積層基板及びその製造方法、並びに半導体素子 |
| US10679852B2 (en) | 2016-06-13 | 2020-06-09 | QROMIS, Inc. | Multi-deposition process for high quality gallium nitride device manufacturing |
| CN114256068B (zh) | 2016-06-14 | 2025-08-01 | 克罗米斯有限公司 | 用于功率应用和射频应用的工程化衬底结构 |
| WO2020031829A1 (ja) * | 2018-08-09 | 2020-02-13 | 信越化学工業株式会社 | ＧａＮ積層基板の製造方法 |
| CN115698391A (zh) * | 2020-06-09 | 2023-02-03 | 信越化学工业株式会社 | Iii族氮化物系外延生长用基板及其制造方法 |
-
2020
- 2020-07-01 JP JP2020114475A patent/JP7618401B2/ja active Active
-
2021
- 2021-05-18 WO PCT/JP2021/018734 patent/WO2022004165A1/ja not_active Ceased
- 2021-05-18 US US18/012,033 patent/US20230257905A1/en not_active Abandoned
- 2021-05-18 KR KR1020227044577A patent/KR20230031835A/ko not_active Ceased
- 2021-05-18 EP EP21831686.7A patent/EP4177384A4/en active Pending
- 2021-05-18 CN CN202180046066.2A patent/CN115997050A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022012558A5 (enExample) | ||
| JP4783288B2 (ja) | 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法 | |
| US7811902B2 (en) | Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same | |
| TW200933740A (en) | Method for manufacturing gallium nitride single crystalline substrate using self-split | |
| EP1288346A3 (en) | Method of manufacturing compound single crystal | |
| CN101273469A (zh) | Ⅲ-ⅴ发光器件 | |
| JP5371430B2 (ja) | 半導体基板並びにハイドライド気相成長法により自立半導体基板を製造するための方法及びそれに使用されるマスク層 | |
| EP4177384A1 (en) | Large-diameter substrate for group-iii nitride epitaxial growth and method for producing the same | |
| JP2015529978A (ja) | 単結晶材料の利用効率を改善した擬似基板 | |
| CN106206258A (zh) | 在硅衬底上形成GaN层的方法以及GaN衬底 | |
| JP5585570B2 (ja) | ムライトを主成分とする焼結体 | |
| JP2013247362A (ja) | 半導体素子用薄膜貼り合わせ基板の製造方法 | |
| KR20140073646A (ko) | 단결정 질화갈륨 기판 및 그 제조 방법 | |
| TW202212291A (zh) | Ｉｉｉ族氮化物系磊晶成長用基板及其製造方法 | |
| US20140001486A1 (en) | Composite semidconductor substrate, semiconductor device, and manufacturing method | |
| CN114892264B (zh) | 氮化镓衬底、氮化镓单晶层及其制造方法 | |
| EP2122015A1 (en) | Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate | |
| JP2019052057A (ja) | 複合基板、ｉｉｉ族窒化物結晶付複合基板、およびｉｉｉ族窒化物結晶の製造方法 | |
| CN118475733A (zh) | 高特性外延生长用基板及其制造方法 | |
| TWM634692U (zh) | 接合基板 | |
| JP7711608B2 (ja) | 窒化物半導体基板の製造方法 | |
| TWI900595B (zh) | 大口徑ｉｉｉ族氮化物系磊晶成長用基板與其製造方法 | |
| US20210320006A1 (en) | Method of manufacturing a semiconductor component, and workpiece | |
| EP4455375A1 (en) | Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrate | |
| EP4289994A1 (en) | Nitride semiconductor substrate and method for producing same |