JP7618401B2 - 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 - Google Patents

大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 Download PDF

Info

Publication number
JP7618401B2
JP7618401B2 JP2020114475A JP2020114475A JP7618401B2 JP 7618401 B2 JP7618401 B2 JP 7618401B2 JP 2020114475 A JP2020114475 A JP 2020114475A JP 2020114475 A JP2020114475 A JP 2020114475A JP 7618401 B2 JP7618401 B2 JP 7618401B2
Authority
JP
Japan
Prior art keywords
substrate
layer
epitaxial growth
group iii
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020114475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022012558A (ja
JP2022012558A5 (enExample
Inventor
芳宏 久保田
実 川原
雅人 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2020114475A priority Critical patent/JP7618401B2/ja
Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to PCT/JP2021/018734 priority patent/WO2022004165A1/ja
Priority to KR1020227044577A priority patent/KR20230031835A/ko
Priority to US18/012,033 priority patent/US20230257905A1/en
Priority to EP21831686.7A priority patent/EP4177384A4/en
Priority to CN202180046066.2A priority patent/CN115997050A/zh
Priority to TW110123734A priority patent/TWI900595B/zh
Publication of JP2022012558A publication Critical patent/JP2022012558A/ja
Publication of JP2022012558A5 publication Critical patent/JP2022012558A5/ja
Application granted granted Critical
Publication of JP7618401B2 publication Critical patent/JP7618401B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Structural Engineering (AREA)
JP2020114475A 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 Active JP7618401B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2020114475A JP7618401B2 (ja) 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR1020227044577A KR20230031835A (ko) 2020-07-01 2021-05-18 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
US18/012,033 US20230257905A1 (en) 2020-07-01 2021-05-18 Large-diameter substrate for group-iii nitride epitaxial growth and method for producing the same
EP21831686.7A EP4177384A4 (en) 2020-07-01 2021-05-18 LARGE DIAMETER SUBSTRATE FOR EPITAXIAL GROWTH OF GROUP III NITRIDE AND PROCESS FOR PRODUCING SAME
PCT/JP2021/018734 WO2022004165A1 (ja) 2020-07-01 2021-05-18 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
CN202180046066.2A CN115997050A (zh) 2020-07-01 2021-05-18 大口径iii族氮化物系外延生长用基板及其制造方法
TW110123734A TWI900595B (zh) 2020-07-01 2021-06-29 大口徑ｉｉｉ族氮化物系磊晶成長用基板與其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020114475A JP7618401B2 (ja) 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法

Publications (3)

Publication Number Publication Date
JP2022012558A JP2022012558A (ja) 2022-01-17
JP2022012558A5 JP2022012558A5 (enExample) 2022-02-25
JP7618401B2 true JP7618401B2 (ja) 2025-01-21

Family

ID=79315945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020114475A Active JP7618401B2 (ja) 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法

Country Status (6)

Country Link
US (1) US20230257905A1 (enExample)
EP (1) EP4177384A4 (enExample)
JP (1) JP7618401B2 (enExample)
KR (1) KR20230031835A (enExample)
CN (1) CN115997050A (enExample)
WO (1) WO2022004165A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7484773B2 (ja) * 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ
JP7657530B2 (ja) * 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
CN218351409U (zh) * 2022-06-30 2023-01-20 苏州晶湛半导体有限公司 一种半导体结构
JP2025007662A (ja) * 2023-07-03 2025-01-17 信越半導体株式会社 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法
CN117476831B (zh) * 2023-12-20 2024-03-19 青禾晶元(晋城)半导体材料有限公司 Led外延片及其制备方法、led芯片及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336079A (ja) 2004-08-16 2004-11-25 Hoya Corp 化合物単結晶の製造方法
US20140070166A1 (en) 2009-09-10 2014-03-13 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
JP2017114694A (ja) 2015-12-21 2017-06-29 信越化学工業株式会社 化合物半導体積層基板及びその製造方法、並びに半導体素子
US20180005827A1 (en) 2016-06-13 2018-01-04 Quora Technology, Inc. Multi-deposition process for high quality gallium nitride device manufacturing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164248A (ja) 1984-02-06 1985-08-27 Toshiba Corp 超音波診断装置
JP4565042B1 (ja) 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
EP2362412B1 (en) * 2010-02-19 2020-04-08 Samsung Electronics Co., Ltd. Method of growing nitride semiconductor
US9105621B2 (en) * 2012-12-20 2015-08-11 Imec Method for bonding of group III-nitride device-on-silicon and devices obtained thereof
CN114256068B (zh) 2016-06-14 2025-08-01 克罗米斯有限公司 用于功率应用和射频应用的工程化衬底结构
WO2020031829A1 (ja) * 2018-08-09 2020-02-13 信越化学工業株式会社 ＧａＮ積層基板の製造方法
CN115698391A (zh) * 2020-06-09 2023-02-03 信越化学工业株式会社 Iii族氮化物系外延生长用基板及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336079A (ja) 2004-08-16 2004-11-25 Hoya Corp 化合物単結晶の製造方法
US20140070166A1 (en) 2009-09-10 2014-03-13 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
JP2017114694A (ja) 2015-12-21 2017-06-29 信越化学工業株式会社 化合物半導体積層基板及びその製造方法、並びに半導体素子
US20180005827A1 (en) 2016-06-13 2018-01-04 Quora Technology, Inc. Multi-deposition process for high quality gallium nitride device manufacturing

Also Published As

Publication number Publication date
JP2022012558A (ja) 2022-01-17
WO2022004165A1 (ja) 2022-01-06
EP4177384A4 (en) 2024-08-07
US20230257905A1 (en) 2023-08-17
KR20230031835A (ko) 2023-03-07
CN115997050A (zh) 2023-04-21
EP4177384A1 (en) 2023-05-10
TW202219340A (zh) 2022-05-16

Similar Documents

Publication Publication Date Title
JP7618401B2 (ja) 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
JP2021195299A (ja) Ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
TW202140835A (zh) Ｉｉｉ族氮化物基板之製造方法及ｉｉｉ族氮化物基板
US20240141552A1 (en) Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same
US20230340694A1 (en) Substrate for group-iii nitride epitaxial growth and method for producing the same
JP7657530B2 (ja) 高特性エピタキシャル成長用基板とその製造方法
TWI900595B (zh) 大口徑ｉｉｉ族氮化物系磊晶成長用基板與其製造方法
CN114144864B (zh) Iii族化合物基板的制造方法和利用该制造方法制造的基板
JP7755451B2 (ja) エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
JP7768842B2 (ja) Ｉｉｉ族窒化物単結晶基板の製造方法
US20250198049A1 (en) Seed substrate for high characteristic epitaxial growth, method for producing seed substrate for high characteristic epitaxial growth, semiconductor substrate and method for producing semiconductor substrate
CN116940720A (zh) 外延生长用种子基板及其制造方法、和半导体基板及其制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230602

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240827

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250108

R150 Certificate of patent or registration of utility model

Ref document number: 7618401

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150