JP2013018706A5 - - Google Patents

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Publication number
JP2013018706A5
JP2013018706A5 JP2012228190A JP2012228190A JP2013018706A5 JP 2013018706 A5 JP2013018706 A5 JP 2013018706A5 JP 2012228190 A JP2012228190 A JP 2012228190A JP 2012228190 A JP2012228190 A JP 2012228190A JP 2013018706 A5 JP2013018706 A5 JP 2013018706A5
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JP
Japan
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crystal
seed crystal
axis
semiconductor
plane
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JP2012228190A
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English (en)
Japanese (ja)
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JP2013018706A (ja
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Priority claimed from US11/428,954 external-priority patent/US8980445B2/en
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Publication of JP2013018706A publication Critical patent/JP2013018706A/ja
Publication of JP2013018706A5 publication Critical patent/JP2013018706A5/ja
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JP2012228190A 2006-07-06 2012-10-15 軸オフの種結晶上での１００ミリメートル炭化ケイ素結晶の成長 Pending JP2013018706A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/428,954 US8980445B2 (en) 2006-07-06 2006-07-06 One hundred millimeter SiC crystal grown on off-axis seed
US11/428,954 2006-07-06

Related Parent Applications (1)

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JP2009518424A Division JP2009542571A (ja) 2006-07-06 2007-05-30 軸オフの種結晶上での１００ミリメートル炭化ケイ素結晶の成長

Publications (2)

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JP2013018706A JP2013018706A (ja) 2013-01-31
JP2013018706A5 true JP2013018706A5 (enExample) 2013-03-14

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JP2009518424A Pending JP2009542571A (ja) 2006-07-06 2007-05-30 軸オフの種結晶上での１００ミリメートル炭化ケイ素結晶の成長
JP2012228190A Pending JP2013018706A (ja) 2006-07-06 2012-10-15 軸オフの種結晶上での１００ミリメートル炭化ケイ素結晶の成長

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JP2009518424A Pending JP2009542571A (ja) 2006-07-06 2007-05-30 軸オフの種結晶上での１００ミリメートル炭化ケイ素結晶の成長

Country Status (6)

Country Link
US (1) US8980445B2 (enExample)
EP (1) EP2038455B1 (enExample)
JP (2) JP2009542571A (enExample)
CN (1) CN101484616B (enExample)
RU (1) RU2418891C9 (enExample)
WO (1) WO2008005636A1 (enExample)

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US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US12054850B2 (en) 2019-12-27 2024-08-06 Wolfspeed, Inc. Large diameter silicon carbide wafers
CN113122914B (zh) * 2020-06-09 2023-02-28 北京世纪金光半导体有限公司 一种维持大尺寸碳化硅晶型稳定的装置及生长方法
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
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