JP5803786B2 - 炭化珪素基板、半導体装置およびこれらの製造方法 - Google Patents
炭化珪素基板、半導体装置およびこれらの製造方法 Download PDFInfo
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- JP5803786B2 JP5803786B2 JP2012083610A JP2012083610A JP5803786B2 JP 5803786 B2 JP5803786 B2 JP 5803786B2 JP 2012083610 A JP2012083610 A JP 2012083610A JP 2012083610 A JP2012083610 A JP 2012083610A JP 5803786 B2 JP5803786 B2 JP 5803786B2
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- silicon carbide
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
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- H—ELECTRICITY
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Description
まず、本発明の一実施の形態である炭化珪素基板について説明する。図1を参照して、本実施の形態における炭化珪素基板1は、その全体が単結晶炭化珪素からなり、第1の主面1Aと、第1の主面と対向する第2の主面1Bとを有している。第1の主面1Aおよび第2の主面1Bの少なくとも一方の主面(たとえば第1の主面1A)には、硫黄原子が60×1010atoms/cm2以上2000×1010atoms/cm2以下で存在し、不純物としての炭素原子が3at%以上25at%以下で存在する。
図6を参照して、本実施の形態における半導体装置100である横型MESFET(Metal Semiconductor Field Effect Transistor)は、p−型炭化珪素基板103と、n−型炭化珪素エピタキシャル成長層102とを主に有している。n−型炭化珪素エピタキシャル成長層102の、p−型炭化珪素基板103と対向しない側(図6における上側)の主表面から一定の深さの領域に、n+型ソース不純物領域111とn+型ドレイン不純物領域114とを含んでいる。n+型ソース不純物領域111、n+型ドレイン不純物領域114の上側の主表面上にそれぞれソース電極121、ドレイン電極124が形成されている。ゲート電極122は、ソース電極121とドレイン電極124との間に形成されている。ソース電極121とゲート電極122との間、およびゲート電極122とドレイン電極124との間には層間絶縁膜106が配置されている。p−型炭化珪素基板103の、n−型炭化珪素エピタキシャル成長層102と対向しない側(図6における下側)の主表面上には基板裏面電極127が配置されている。なお、以上に述べた各構成要素のp型およびn型をすべて逆とした構成としてもよい。
次に、実施の形態2における炭化珪素基板について説明する。図8を参照して実施の形態2における炭化珪素基板1は、基本的には実施の形態1の炭化珪素基板1と同様の構成を有し、同様の効果を奏する。しかし、実施の形態2における炭化珪素基板1は、ベース層11および単結晶炭化珪素層12を備えている点において、実施の形態1の場合とは異なっている。
Claims (13)
- 第1の主面と、前記第1の主面と対向する第2の主面とを備え、
前記第1の主面および前記第2の主面の少なくとも一方の主面を含む領域が単結晶炭化珪素からなり、
前記一方の主面には、
硫黄原子が60×1010atoms/cm2以上2000×1010atoms/cm2以下で存在し、
不純物としての炭素原子が3at%以上25at%以下で存在する、炭化珪素基板。 - 前記一方の主面に存在する塩素原子は3000×1010atoms/cm2以下である、請求項1に記載の炭化珪素基板。
- 前記一方の主面に存在する酸素原子は3at%以上30at%以下である、請求項1または2に記載の炭化珪素基板。
- 前記一方の主面に存在する金属不純物は4000×1010atoms/cm2以下である、請求項1〜3のいずれか1項に記載の炭化珪素基板。
- 前記一方の主面の表面粗さは、Rqで評価した場合0.5nm以下である、請求項1〜4のいずれか1項に記載の炭化珪素基板。
- 直径が110mm以上である、請求項1〜5のいずれか1項に記載の炭化珪素基板。
- 直径が125mm以上300mm以下である、請求項1〜6のいずれか1項に記載の炭化珪素基板。
- 前記単結晶炭化珪素は4H構造を有し、
前記単結晶炭化珪素の{0001}面に対する前記一方の主面のオフ角は0.1°以上10°以下である、請求項1〜7のいずれか1項に記載の炭化珪素基板。 - 前記単結晶炭化珪素は4H構造を有し、
前記単結晶炭化珪素の{03−38}面に対する前記一方の主面のオフ角は4°以下である、請求項1〜7のいずれか1項に記載の炭化珪素基板。 - ベース層と、
前記ベース層上に形成された単結晶炭化珪素層とを備え、
前記一方の主面は、前記単結晶炭化珪素層の、前記ベース層の側とは反対側の表面である、請求項1〜9のいずれか1項に記載の炭化珪素基板。 - 第1の主面と、前記第1の主面と対向する第2の主面とを有する炭化珪素基板を備え、
前記炭化珪素基板は、前記第1の主面および前記第2の主面の少なくとも一方の主面を含む領域が単結晶炭化珪素からなり、前記一方の主面には、硫黄原子が60×1010atoms/cm2以上2000×1010atoms/cm2以下で存在し、かつ不純物としての炭素原子が3at%以上25at%以下で存在し、さらに、
前記炭化珪素基板の前記一方の主面上に形成されたエピタキシャル成長層と、
前記エピタキシャル成長層上に形成された電極とを備える、半導体装置。 - 単結晶炭化珪素の結晶を準備する工程と、
前記結晶を切断することにより、第1の主面と、前記第1の主面と対向する第2の主面とを有する基板を得る工程と、
前記第1の主面および前記第2の主面の少なくとも一方の主面を平坦化する工程と、
平坦化された前記基板の表面を仕上げ処理する工程とを備え、
前記基板の表面を仕上げ処理する工程では、前記一方の主面に、硫黄原子が60×1010atoms/cm2以上2000×1010atoms/cm2以下で存在し、不純物としての炭素原子が3at%以上25at%以下で存在するように前記一方の主面における硫黄原子および不純物としての炭素原子の存在割合が調整される、炭化珪素基板の製造方法。 - 第1の主面と、前記第1の主面と対向する第2の主面とを有する炭化珪素基板を準備する工程と、
前記炭化珪素基板は、前記第1の主面および前記第2の主面の少なくとも一方の主面を含む領域が単結晶炭化珪素からなり、前記一方の主面には、硫黄原子が60×1010atoms/cm2以上2000×1010atoms/cm2以下で存在し、かつ不純物としての炭素原子が3at%以上25at%以下で存在しており、さらに、
前記炭化珪素基板の前記一方の主面上にエピタキシャル成長層を形成する工程と、
前記エピタキシャル成長層上に電極を形成する工程とを備える、半導体装置の製造方法。
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PCT/JP2013/053516 WO2013150822A1 (ja) | 2012-04-02 | 2013-02-14 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
DE112013001868.3T DE112013001868B4 (de) | 2012-04-02 | 2013-02-14 | Siliziumkarbid-Substrat, Verfahren zu dessen Herstellung und dessen Verwendung für eine Halbleitervorrichtung |
DE202013012603.5U DE202013012603U1 (de) | 2012-04-02 | 2013-02-14 | Siliziumkarbid-Substrat und Halbleitervorrichtung |
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CN201610808851.8A CN106367811B (zh) | 2012-04-02 | 2013-02-14 | 碳化硅衬底、半导体器件及其制造方法 |
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DE112015003483T5 (de) * | 2014-07-30 | 2017-04-20 | Mitsubishi Electric Corporation | Halbleitervorrichtung-herstellungsverfahren und halbleitervorrichtung |
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DE112015004795T5 (de) * | 2014-10-23 | 2017-10-12 | Sumitomo Electric Industries Ltd. | Siliziumkarbidsubstrat und Verfahren zur Herstellung desselben |
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US9484416B2 (en) | 2011-07-20 | 2016-11-01 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate, semiconductor device and methods for manufacturing them |
US9728612B2 (en) | 2011-07-20 | 2017-08-08 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate, semiconductor device and methods for manufacturing them |
US9437690B2 (en) | 2012-04-02 | 2016-09-06 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate, semiconductor device, and methods for manufacturing them |
US9722028B2 (en) | 2012-04-02 | 2017-08-01 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate, semiconductor device, and methods for manufacturing them |
JP2016026994A (ja) * | 2015-09-02 | 2016-02-18 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
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WO2013150822A1 (ja) | 2013-10-10 |
JP2013212951A (ja) | 2013-10-17 |
US20160343808A1 (en) | 2016-11-24 |
US20160020281A1 (en) | 2016-01-21 |
CN104114755B (zh) | 2016-09-28 |
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