JP6028754B2 - SiC単結晶基板の製造方法 - Google Patents
SiC単結晶基板の製造方法 Download PDFInfo
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- JP6028754B2 JP6028754B2 JP2014047781A JP2014047781A JP6028754B2 JP 6028754 B2 JP6028754 B2 JP 6028754B2 JP 2014047781 A JP2014047781 A JP 2014047781A JP 2014047781 A JP2014047781 A JP 2014047781A JP 6028754 B2 JP6028754 B2 JP 6028754B2
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- JP
- Japan
- Prior art keywords
- single crystal
- sic single
- crystal substrate
- solution
- sic
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
1.2gの純Cr金属のバルク試料(高純度化学製、99.99%)を、各種薬品に5分間浸漬して、バルク試料の浸漬前後の重量を測定して、各種薬品の純Cr金属の溶解性を評価した。浸漬による重量低下が1%以下を示した結果を不溶と判断し、浸漬後の重量低下が42%以上を示した結果を易溶と判断した。重量低下が1%〜42%の間を示す結果はなかった。評価結果を表1に示す。Crの溶解性が認められた薬品、及びCrの溶解性が認められなかった薬品の一部については、あわせて有機付着物の溶解性についても、顕微鏡外観観察により評価した。
次のようにして、溶液法によりSiC単結晶を成長させた。
実施例1と同様に溶液法で成長させたSiC単結晶インゴットを基板形状にスライスして種結晶基板から分離し、スライスしたSiC単結晶を、接着剤を用いて研磨治具に固定し、SiC単結晶の(0001)面を鏡面研磨し、超純水による流水洗浄を行った。
2 Cr含有金属の除去痕
3 有機付着物に起因するコントラスト模様
4 有機付着物に起因する黒い点
100 溶液法に用いられる結晶製造装置
10 坩堝
12 種結晶保持軸
14 種結晶基板
18 断熱材
22 高周波コイル
22A 上段高周波コイル
22B 下段高周波コイル
24 Si−C溶液
26 石英管
500 昇華法に用いられる結晶製造装置
50 坩堝
54 種結晶
58 断熱材
60 光路
62 種結晶取り付け台
64 SiC原料粉末
Claims (7)
- 不純物としてCrを含むSiC単結晶基板を50℃〜80℃の塩酸に浸漬させる工程、及び
前記塩酸に浸漬させる工程の後に、前記SiC単結晶基板をSi溶解性の溶液に浸漬する工程
を含み、
前記Si溶解性の溶液が、フッ酸及び硝酸を含む溶液である
SiC単結晶基板の製造方法。 - 前記塩酸に浸漬させる工程の前に、前記SiC単結晶基板を有機物溶解性の溶液に浸漬する工程を含む、請求項1に記載の製造方法。
- 前記有機物溶解性の溶液が、アセトン、またはNH4OH及びH2O2を含む溶液である、請求項2に記載の製造方法。
- 前記SiC単結晶基板をSi溶解性の溶液に浸漬する工程の後に、前記SiC単結晶基板をRCA洗浄する工程を含む、請求項1〜3のいずれか一項に記載の製造方法。
- 前記SiC単結晶基板を、Si/Cr溶媒を用いる溶液法により成長させる工程を含む、請求項1〜4のいずれか一項に記載の製造方法。
- 前記SiC単結晶基板を成長させる工程の後に、前記SiC単結晶基板を研磨する工程を含む、請求項5に記載の製造方法。
- 前記SiC単結晶基板を成長させる工程と前記塩酸に浸漬させる工程との間で、前記SiC単結晶基板を酸洗浄しない、請求項5または6に記載の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014047781A JP6028754B2 (ja) | 2014-03-11 | 2014-03-11 | SiC単結晶基板の製造方法 |
US14/628,558 US9873955B2 (en) | 2014-03-11 | 2015-02-23 | Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid |
CN201510102473.7A CN104911716A (zh) | 2014-03-11 | 2015-03-09 | SiC单晶基板的制造方法 |
DE102015103450.6A DE102015103450A1 (de) | 2014-03-11 | 2015-03-10 | Verfahren zur Herstellung eines SIC-Einkristallsubstrats |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014047781A JP6028754B2 (ja) | 2014-03-11 | 2014-03-11 | SiC単結晶基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015171962A JP2015171962A (ja) | 2015-10-01 |
JP6028754B2 true JP6028754B2 (ja) | 2016-11-16 |
Family
ID=54010341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014047781A Expired - Fee Related JP6028754B2 (ja) | 2014-03-11 | 2014-03-11 | SiC単結晶基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9873955B2 (ja) |
JP (1) | JP6028754B2 (ja) |
CN (1) | CN104911716A (ja) |
DE (1) | DE102015103450A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018100679A1 (de) * | 2018-01-12 | 2019-07-18 | Universität Paderborn | Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid |
CN109112615A (zh) * | 2018-11-12 | 2019-01-01 | 孟静 | 大尺寸碳化硅单晶板的制备方法 |
CN113981528B (zh) * | 2020-07-27 | 2024-06-21 | 环球晶圆股份有限公司 | 碳化硅晶片的制造方法以及半导体结构 |
CN114318541A (zh) * | 2022-03-07 | 2022-04-12 | 常州臻晶半导体有限公司 | 一种碳化硅晶体生长用输送装置 |
Family Cites Families (19)
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US5679153A (en) * | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
JPH104074A (ja) * | 1996-03-25 | 1998-01-06 | Fujitsu Ltd | 基板又は膜の洗浄方法及び半導体装置の製造方法 |
US6419757B2 (en) * | 1998-12-08 | 2002-07-16 | Bridgestone, Corporation | Method for cleaning sintered silicon carbide in wet condition |
JP4188473B2 (ja) | 1998-12-08 | 2008-11-26 | 株式会社ブリヂストン | 炭化ケイ素焼結体の湿式洗浄方法 |
JP4710187B2 (ja) * | 2000-08-30 | 2011-06-29 | ソニー株式会社 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
US20030233977A1 (en) | 2002-06-20 | 2003-12-25 | Yeshwanth Narendar | Method for forming semiconductor processing components |
US7091132B2 (en) | 2003-07-24 | 2006-08-15 | Applied Materials, Inc. | Ultrasonic assisted etch using corrosive liquids |
JP2005047753A (ja) | 2003-07-29 | 2005-02-24 | Tadahiro Omi | 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法 |
KR100931196B1 (ko) * | 2007-10-10 | 2009-12-10 | 주식회사 실트론 | 실리콘 웨이퍼 세정 방법 |
CN102203330B (zh) * | 2008-08-29 | 2013-08-21 | 新日铁住金株式会社 | 碳化硅单晶的制造方法 |
JP5304255B2 (ja) * | 2009-01-13 | 2013-10-02 | 住友電気工業株式会社 | 炭化ケイ素基板、エピタキシャルウエハおよび炭化ケイ素基板の製造方法 |
JP5672659B2 (ja) | 2009-04-06 | 2015-02-18 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
WO2011007458A1 (ja) | 2009-07-17 | 2011-01-20 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP5565070B2 (ja) | 2010-04-26 | 2014-08-06 | 住友電気工業株式会社 | 炭化珪素結晶および炭化珪素結晶の製造方法 |
JPWO2012002440A1 (ja) | 2010-06-29 | 2013-08-29 | 京セラ株式会社 | 半導体基板の表面処理方法、半導体基板、および太陽電池の製造方法 |
JP5545310B2 (ja) * | 2012-03-08 | 2014-07-09 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法、および、炭化珪素エピタキシャルウエハ、ならびに、炭化珪素半導体装置 |
JP5803786B2 (ja) * | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
JP5668724B2 (ja) | 2012-06-05 | 2015-02-12 | トヨタ自動車株式会社 | SiC単結晶のインゴット、SiC単結晶、及び製造方法 |
CN103539123A (zh) * | 2013-10-25 | 2014-01-29 | 宁夏机械研究院(有限责任公司) | 亚微米级碳化硅微粉的酸洗提纯方法 |
-
2014
- 2014-03-11 JP JP2014047781A patent/JP6028754B2/ja not_active Expired - Fee Related
-
2015
- 2015-02-23 US US14/628,558 patent/US9873955B2/en not_active Expired - Fee Related
- 2015-03-09 CN CN201510102473.7A patent/CN104911716A/zh active Pending
- 2015-03-10 DE DE102015103450.6A patent/DE102015103450A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
JP2015171962A (ja) | 2015-10-01 |
DE102015103450A1 (de) | 2015-09-17 |
US9873955B2 (en) | 2018-01-23 |
US20150259829A1 (en) | 2015-09-17 |
CN104911716A (zh) | 2015-09-16 |
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