JP6690983B2 - ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 - Google Patents
ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 21
- 238000001514 detection method Methods 0.000 title claims description 15
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- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000004299 exfoliation Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 41
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910010271 silicon carbide Inorganic materials 0.000 description 36
- 239000010410 layer Substances 0.000 description 25
- 238000003384 imaging method Methods 0.000 description 6
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- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000000434 stratum corneum Anatomy 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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Description
レーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :3ns
集光スポット径 :φ10μm
集光レンズの開口数(NA):0.65
加工送り速度 :150mm/s
デフォーカス :90μm
レーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :3ns
集光スポット径 :φ10μm
集光レンズの開口数(NA):0.65
インデックス量 :500μm
加工送り速度 :150mm/s
デフォーカス :90μm
62:周面
64:表面
66:裏面
68:第1のオリエンテーションフラット
70:第2のオリエンテーションフラット
72:垂直軸
74:サンプル強度低下部
76:サンプル強度低下部の改質層
78:サンプル強度低下部のクラック
80:節
82:強度低下部
84:強度低下部の改質層
86:強度低下部のクラック
88:ウエーハ
L1:第1のオリエンテーションフラットの長さ
L2:第2のオリエンテーションフラットの長さ
α:オフ角
A:C軸の傾いている方向
Claims (2)
- 第1のオリエンテーションフラット及び該第1のオリエンテーションフラットより短くかつ該第1のオリエンテーションフラットに直交する第2のオリエンテーションフラットが形成された円筒形状の周面と、円形状の表面とを備え、該表面に垂直な垂直軸に対してC軸が該第2のオリエンテーションフラットに向かって傾き該C軸に直交するC面と該表面とがなすオフ角を該第2のオリエンテーションフラット側に有する円柱形状の単結晶SiCインゴットからウエーハを生成するウエーハ生成方法であって、
該C軸の傾く方向と該第2のオリエンテーションフラットとが直角をなしているか否かを確認し、該C軸の傾く方向と直角をなす実第2のオリエンテーションフラットを検出する実第2のオリエンテーションフラット検出工程と、
該表面から生成すべきウエーハの厚みに相当する深さの位置に集光点を位置付け、該実第2のオリエンテーションフラットに対して平行な方向に該単結晶SiCインゴットと該集光点とを相対的に移動させながら、SiCに対して透過性を有する波長のレーザー光線を該単結晶SiCインゴットに照射することによって、生成すべきウエーハの厚みに相当する深さにおいて該実第2のオリエンテーションフラット及び該表面に平行な改質層とクラックとからなる直線状の強度低下部を形成する強度低下部形成加工を、該実第2のオリエンテーションフラットに対して垂直な方向に間隔をおいて複数回行って剥離面を形成する剥離面形成工程と、
該剥離面を界面として該単結晶SiCインゴットの一部を剥離してウエーハを生成するウエーハ生成工程とを含み、
該実第2のオリエンテーションフラット検出工程は、該表面から所定深さの位置に集光点を位置付け、該単結晶SiCインゴットと該集光点とを相対的に移動させながら、SiCに対して透過性を有する波長のレーザー光線を該単結晶SiCインゴットに照射するサンプル照射を、該第2のオリエンテーションフラットに対して平行な方向並びに該第2のオリエンテーションフラットを基準として時計回り及び反時計回りに所定角度ごとに傾けた複数の方向のそれぞれにおいて行い、該表面に平行な改質層とクラックとからなる直線状のサンプル強度低下部を複数形成するサンプリングステップと、
該複数のサンプル強度低下部のそれぞれを撮像手段によって撮像し、該撮像手段によって撮像された画像に基づいて該複数のサンプル強度低下部のそれぞれの単位長さあたりに存在する節の数を計測し、節の数が0個であるサンプル強度低下部が延びる方向を実第2のオリエンテーションフラットとして決定する決定ステップとを含むウエーハ生成方法。 - 第1のオリエンテーションフラット及び該第1のオリエンテーションフラットより短くかつ該第1のオリエンテーションフラットに直交する第2のオリエンテーションフラットが形成された円筒形状の周面と、円形状の表面とを備え、該表面に垂直な垂直軸に対してC軸が該第2のオリエンテーションフラットに向かって傾き該C軸に直交するC面と該表面とがなすオフ角を該第2のオリエンテーションフラット側に有する円柱形状の単結晶SiCインゴットにおいて、該C軸の傾く方向と該第2のオリエンテーションフラットとが直角をなしているか否かを確認し、該C軸の傾く方向と直角をなす実第2のオリエンテーションフラットを検出する実第2のオリエンテーションフラット検出方法であって、
該表面から所定深さの位置に集光点を位置付け、該単結晶SiCインゴットと該集光点とを相対的に移動させながら、SiCに対して透過性を有する波長のレーザー光線を該単結晶SiCインゴットに照射するサンプル照射を、該第2のオリエンテーションフラットに対して平行な方向並びに該第2のオリエンテーションフラットを基準として時計回り及び反時計回りに所定角度ごとに傾けた複数の方向のそれぞれにおいて行い、該表面に平行な改質層とクラックとからなる直線状のサンプル強度低下部を複数形成するサンプリングステップと、
該複数のサンプル強度低下部のそれぞれを撮像手段によって撮像し、該撮像手段によって撮像された画像に基づいて該複数のサンプル強度低下部のそれぞれの単位長さあたりに存在する節の数を計測し、節の数が0個であるサンプル強度低下部が延びる方向を実第2のオリエンテーションフラットとして決定する決定ステップとを含む実第2のオリエンテーションフラット検出方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016078613A JP6690983B2 (ja) | 2016-04-11 | 2016-04-11 | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
TW106106383A TWI707757B (zh) | 2016-04-11 | 2017-02-24 | 晶圓生成方法及加工進給方向檢測方法 |
MYPI2017700965A MY183579A (en) | 2016-04-11 | 2017-03-22 | Wafer producing method and processing feed direction detecting method |
SG10201702360YA SG10201702360YA (en) | 2016-04-11 | 2017-03-23 | Wafer producing method and processing feed direction detecting method |
US15/475,982 US10406635B2 (en) | 2016-04-11 | 2017-03-31 | Wafer producing method and processing feed direction detecting method |
CN201710220144.1A CN107283078B (zh) | 2016-04-11 | 2017-04-06 | 晶片生成方法和加工进给方向检测方法 |
KR1020170045170A KR102186219B1 (ko) | 2016-04-11 | 2017-04-07 | 웨이퍼 생성 방법 및 가공 이송 방향 검출 방법 |
DE102017206178.2A DE102017206178A1 (de) | 2016-04-11 | 2017-04-11 | Waferherstellungsverfahren und Erfassungsverfahren für eine Bearbeitungszuführrichtung |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |