TWI707757B - 晶圓生成方法及加工進給方向檢測方法 - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 230000009467 reduction Effects 0.000 claims abstract description 27
- 238000005070 sampling Methods 0.000 claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims description 77
- 235000012431 wafers Nutrition 0.000 claims description 51
- 238000003384 imaging method Methods 0.000 claims description 20
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910010271 silicon carbide Inorganic materials 0.000 description 36
- 239000010410 layer Substances 0.000 description 23
- 238000003754 machining Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
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- 239000002346 layers by function Substances 0.000 description 2
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- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Abstract
本發明之課題為提供一種能夠謀求生產性之提升的晶圓生成方法。解決手段為一種晶圓的生成方法,其包含確認c軸的傾斜方向與第2定向平面是否成直角,且檢測與c軸之傾斜方向成直角的加工進給方向的加工進給方向檢測步驟。加工進給方向檢測步驟包含抽樣步驟與決定步驟,該抽樣步驟是將對晶錠照射雷射光線之樣品照射在相對於第2定向平面平行的方向及以第2定向平面為基準而朝順時針方向及逆時針方向按每個預定角度傾斜之複數個方向上各自實施,以形成複數個樣品強度降低部,該決定步驟是量測存在於樣品強度降低部的每一個的單位長度之節的數量,並將節之數量為0個的樣品強度降低部延伸的方向作為加工進給方向來決定。
Description
發明領域
本發明是一種有關於從單晶SiC晶錠生成晶圓的晶圓生成方法、及從單晶SiC晶錠生成晶圓之時檢測與c軸之傾斜方向成直角的加工進給方向的加工進給方向檢測方法。
發明背景
IC、或LSI、LED等之器件是在以Si(矽)或Al2O3(藍寶石)等作為素材之晶圓的上表面積層機能層並藉由分割預定線劃分而形成。又,功率器件或LED等是在以單晶SiC(碳化矽)為素材之晶圓的上表面積層機能層並藉由分割預定線劃分而形成。晶圓是藉由切削裝置與雷射加工裝置對分割預定線施行加工而分割成一個個的器件。並且,會將各器件利用於行動電話或個人電腦等電氣機器上。
形成有器件的晶圓一般是藉由將圓柱形狀的晶錠以線鋸薄薄地切斷而生成。已切斷之晶圓的上表面及下表面會藉由研磨而加工成鏡面(參照專利文獻1)。但,當將晶錠以線鋸切斷,並研磨已切斷之晶圓的上表面及下表面時,變得要將晶錠的大部分(70~80%)捨棄,而有不符經濟效益的問題。尤其在單晶SiC晶錠中,在下述情形中具有課題:由於硬度高以線鋸進行的切斷較困難而需要
相當的時間所以生產性差,並且晶錠的單價高要有效率地生成晶圓。
於是,已有下述的技術被提出:藉由將聚光點定位在SiC晶錠的內部,並將對於SiC具有穿透性之波長的雷射光線照射到SiC晶錠而在切斷預定面形成改質層,來將已形成有改質層的切斷預定面切斷並從SiC晶錠生成晶圓(參照專利文獻2)。然而,存在有在從SiC晶錠生成晶圓時必須使改質層相鄰並形成多數個而有生產性較差的問題。
專利文獻1:日本專利特開2000-94221號公報
專利文獻2:日本專利特開2013-49161號公報
發明概要
有鑒於上述事實而作成的本發明之第1課題為提供一種能夠謀求生產性之提升的晶圓生成方法。
本發明的第2課題為提供一種使能夠謀求生產性之提升的晶圓生成方法之實施變得可行的加工進給方向檢測方法。
依據本發明的一個方面,可提供一種從圓柱
形狀之單晶SiC晶錠生成晶圓的晶圓生成方法,該單晶SiC晶錠具備形成有第1定向平面及比該第1定向平面更短且正交於該第1定向平面的第2定向平面之圓筒形狀的周面、及圓形的上表面,且在該第2定向平面側具有c軸相對於與該上表面垂直的垂直軸朝該第2定向平面傾斜而在正交於該c軸的c面與該上表面間形成的偏角,該晶圓生成方法包含:加工進給方向檢測步驟,確認該c軸的傾斜方向與該第2定向平面是否成直角,且檢測與該c軸之傾斜方向成直角的加工進給方向;強度降低部形成步驟,藉由將雷射光線的聚光點定位在相當於應從該上表面生成之晶圓的厚度之深度的位置上,並在該加工進給方向檢測步驟中所檢測出的前述加工進給方向上使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線,而在相當於應生成之晶圓的厚度的深度上形成由平行於該上表面的改質層與從該改質層沿該c面延伸的裂隙所構成之直線狀的強度降低部;剝離面形成步驟,將該強度降低部形成步驟在與該加工進給方向正交的方向上隔著預定的間隔實施複數次來形成剝離面;及晶圓生成步驟,實施該剝離面形成步驟後,以該剝離面作為界面來將該單晶SiC晶錠的一部分剝離以生成晶圓,
前述加工進給方向檢測步驟包含:抽樣步驟,在相對於該第2定向平面平行的方向及以該第2定向平面作為基準而朝順時針方向及逆時針方向按每個預定角度傾斜的複數個方向的每一方向上進行樣品照射,而形成複數個由平行於該上表面的改質層與從該改質層沿該c面伸長的裂隙所構成之直線狀的樣品強度降低部,其中該樣品照射是將聚光點定位於距離該上表面預定深度的位置,使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線;及決定步驟,藉由攝像機構拍攝該複數個樣品強度降低部的每一個,並依據藉由該攝像機構所拍攝到的圖像量測在該複數個樣品強度降低部的每一個的每一單位長度中存在之節的數量,並將節的數量為0個的樣品強度降低部延伸的方向作為加工進給方向來決定。
依據本發明之其他方面,可提供一種檢測從圓柱形狀的單晶SiC晶錠生成晶圓之時的加工進給方向的加工進給方向檢測方法,該單晶SiC晶錠具備形成有第1定向平面及比該第1定向平面更短且正交於該第1定向平面的第2定向平面之圓筒形狀的周面、及圓形的上表面,且在該第2定向平面側具有c軸相對於與該上表面垂直的垂直軸朝該第2定向平面傾斜而在正交於該c軸的c面與該上表面間形成的偏角,該加工進給方向檢測方法具備有:抽樣步驟,在相對於該第2定向平面平行的方向及以
該第2定向平面作為基準而朝順時針方向及逆時針方向按每個預定角度傾斜的複數個方向的每一方向上進行樣品照射,而形成複數個由平行於該上表面的改質層與從該改質層沿該c面伸長的裂隙所構成之直線狀的樣品強度降低部,其中該樣品照射是將聚光點定位於距離該上表面預定深度的位置,使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線;及決定步驟,藉由攝像機構拍攝該複數個樣品強度降低部的每一個,並依據藉由該攝像機構所拍攝到的圖像量測在該複數個樣品強度降低部的每一個的每一單位長度中存在之節的數量,並將節的數量為0個的樣品強度降低部延伸的方向作為加工進給方向來決定。
依據本發明的晶圓生成方法,可以藉由以剝離面作為界面來將單晶SiC晶錠的一部分剝離,以生成所期望之厚度的晶圓。因此,在本發明的晶圓生成方法中,能夠從單晶SiC晶錠有效率地生成晶圓,並且能夠減少被捨棄的素材量,而能夠謀求生產性的提升。
依據本發明的加工進給方向檢測方法,由於是將節的數量為0個之樣品強度降低部延伸的方向作為加工進給方向來決定,所以能夠將加工進給方向設成與c軸的傾斜方向成直角。因此,在從單晶SiC晶錠生成晶圓之時,能夠確實地形成品質良好的剝離面。
2:雷射加工裝置
4:基台
4a、20a:導軌
6:保持機構
8:移動機構
10:雷射光線照射機構
12:攝像機構
14:顯示機構
16:剝離機構
18:控制機構
20:X方向可動板
22:Y方向可動板
24:工作夾台
26:X方向移動機構
28:Y方向移動機構
30、34:滾珠螺桿
32、36、46:馬達
38:框體
40:聚光器
42:罩殼
44:手臂
48:吸附片
50:中央處理裝置(CPU)
52:唯讀記憶體(ROM)
54:隨機存取記憶體(RAM)
60:單晶SiC晶錠
62:周面
64:上表面
66:下表面
68:第1定向平面
70:第2定向平面
72:垂直軸
74:樣品強度降低部
76:改質層
78:裂隙
80:節
82:強度降低部
84:改質層
86:裂隙
88:晶圓
L1:第1定向平面的長度
L2:第2定向平面的長度
Lc:裂隙的長度
Li:Y方向的分度量
α:偏角
A:c軸的傾斜方向
X、Y、Z:箭頭
圖1是雷射加工裝置之立體圖。
圖2是顯示圖1所示之雷射加工裝置的電氣構成的方塊圖。
圖3(a)、(b)是單晶SiC晶錠的平面圖及正面圖。
圖4(a)、(b)是顯示實行實際第2定向平面檢測步驟之抽樣步驟之狀態的立體圖。
圖5(a)、(b)是顯示已實行抽樣步驟之單晶SiC晶錠的平面圖及複數個樣品強度降低部的示意圖。
圖6是顯示正在實施剝離面形成步驟之狀態的立體圖。
圖7(a)、(b)是形成有剝離面之單晶SiC晶錠的平面圖及剖面圖。
圖8是顯示正在實施晶圓生成步驟之狀態的立體圖。
用以實施發明之形態
以下,參照圖式說明本發明的晶圓生成方法及實際第2定向平面檢測方法的實施形態。
圖1所示的雷射加工裝置2,具備基台4、保持被加工物的保持機構6、使保持機構6移動的移動機構8、雷射光線照射機構10、攝像機構12、顯示機構14、剝離機構16、及控制機構18。
保持機構6包含可在X方向上移動自如地搭載於基台4上之矩形形狀的X方向可動板20、可在Y方向上
移動自如地搭載於X方向可動板20上之矩形形狀的Y方向可動板22、及可旋轉自如地搭載於Y方向可動板22的上表面之圓筒形狀的工作夾台24。再者,X方向是圖1中以箭頭X所示的方向,Y方向是圖1中以箭頭Y所示的方向且為與X方向正交的方向。X方向及Y方向所規定的平面實質上是水平的。
移動機構8包含X方向移動機構26、Y方向移動機構28、及旋轉機構(圖未示)。X方向移動機構26具有在基台4上於X方向上延伸的滾珠螺桿30、及連結於滾珠螺桿30之一端部的馬達32。滾珠螺桿30的螺帽部(圖未示)是固定於X方向可動板20的下表面。並且,X方向移動機構26會藉由滾珠螺桿30將馬達32的旋轉運動轉換成直線運動並傳達至X方向可動板20,以沿基台4上的導軌4a使X方向可動板20在X方向上進退。Y方向移動機構28具有在X方向可動板20上於Y方向上延伸的滾珠螺桿34、及連結於滾珠螺桿34之一端部的馬達36。滾珠螺桿34的螺帽部(圖未示)是固定於Y方向可動板22的下表面。並且,Y方向移動機構28會藉由滾珠螺桿34將馬達36的旋轉運動轉換成直線運動並傳達至Y方向可動板22,以沿X方向可動板20上的導軌20a使Y方向可動板22在Y方向上進退。旋轉機構具有內置於工作夾台24的馬達(圖未示),以使工作夾台24相對於Y方向可動板22旋轉。
雷射光線照射機構10包含從基台4的上表面朝上方延伸且接下來實質上水平地延伸的框體38、內置於
框體38的脈衝雷射光線振盪機構(圖未示)、配置於框體38的前端下表面的聚光器40、及聚光點位置調整機構(圖未示)。脈衝雷射光線振盪機構具有脈衝雷射光線振盪器、用於調整脈衝雷射光線之輸出的輸出調整機構、及用於設定脈衝雷射光線之重複頻率的設定機構(皆為未圖示)。聚光器40具有用於將從脈衝雷射光線振盪機構所振盪產生的脈衝雷射光線聚光的聚光透鏡(圖未示)。
攝像機構12是與聚光器40在X方向上隔著間隔而附設在框體38的前端下表面。攝像機構12包含藉由可見光拍攝之通常的攝像元件(CCD)、對被加工物照射紅外線的紅外線照射機構、捕捉藉由紅外線照射機構所照射之紅外線的光學系統、及輸出對應於光學系統所捕捉之紅外線的電氣訊號的撮像元件(紅外線CCD)(皆為未圖示)。顯示藉由攝像機構12所拍攝到的圖像的顯示機構14是搭載於框體38的前端上表面。
剝離機構16包含從基台4上之導軌4a的終端部朝上方延伸的罩殼42、及從可在Z方向上移動自如地連結於罩殼42之基端朝X方向延伸的手臂44。罩殼42中內置有使手臂44在Z方向上進退的Z方向移動機構(圖未示)。手臂44的前端附設有馬達46。在馬達46的下表面,以在Z方向上延伸的軸線為中心而旋轉自如地連結著圓盤狀的吸附片48。吸附片48在下表面(吸附面)形成有複數個吸引孔(圖未示),且可藉由流路連接到吸引機構(圖未示)。又,在吸附片48中,內置有相對於下表面賦予超音波振動的超音波
振動賦予機構(圖未示)。再者,Z方向是圖1中以箭頭Z表示的方向且為與X方向及Y方向正交的方向。
由電腦所構成的控制機構18,如圖2所示,包含依照控制程式進行運算處理的中央處理裝置(CPU)50、保存控制程式等的唯讀記憶體(ROM)52、及保存運算結果等之可讀寫的隨機存取記憶體(RAM)54。控制機構18會電連接到移動機構8、雷射光線照射機構10、攝像機構12、顯示機構14及剝離機構16,而控制其等的作動。
圖3所示的六方晶單晶SiC晶錠60(以下稱為「晶錠60」)是圓柱形狀,並具備圓筒形狀的周面62、與圓形的上表面64及下表面66。在周面62中,形成有表示結晶方位之矩形形狀的第1定向平面68及第2定向平面70。於垂直於上表面64之垂直軸72的方向觀看,第2定向平面70的長度L2比第1定向平面68的長度L1更短(L2<L1)。又,第1定向平面68與第2定向平面70是正交的。在晶錠60中,為c軸(<0001>方向)相對於垂直軸72朝第2定向平面70傾斜(將c軸的傾斜方向以箭頭A表示),又在第2定向平面70側具有正交於c軸的c面({0001}面)與上表面64所形成的偏角α。在此,在六方晶單晶SiC晶錠60中,通常是將第2定向平面70形成為與c軸成直角。
以下,說明使用了雷射加工裝置之本發明實施形態的晶圓生成方法及檢測生成晶圓之時的加工進給方向的加工進給方向檢測方法。首先,使接著劑(例如環氧樹脂系接著劑)介在晶錠60之下表面66與工作夾台24之上表
面間,以如圖1所示地將晶錠60固定於工作夾台24。
已將晶錠60固定於工作夾台24後,實施校準步驟。在校準步驟中,首先,是藉由移動機構8使工作夾台24移動至攝像機構12的下方,並藉由攝像機構12拍攝晶錠60。接著,依據藉由攝像機構12所拍攝之晶錠60的圖像,檢測第1定向平面68及第2定向平面70,且藉由移動機構8使工作夾台24移動及旋轉,以進行晶錠60與聚光器40的對位。接著,藉由聚光點位置調整機構使聚光器40在Z方向上移動,而將脈衝雷射光線的聚光點調整至距離上表面64預定深度的位置(相當於應生成之晶圓的厚度之深度的位置)。
在實施校準步驟後,實施加工進給方向檢測步驟,該加工進給方向檢測步驟是確認c軸的傾斜方向A與第2定向平面70是否成直角,以檢測在從晶錠生成晶圓之時與c軸的傾斜方向A成直角之加工進給方向。加工進給方向檢測步驟包含抽樣步驟、及決定步驟。如圖4所示,在抽樣步驟中,是進行樣品照射,以形成平行於上表面64之直線狀的樣品強度降低部74,其中該樣品照射是將工作夾台24藉由X方向移動機構26以預定的加工進給速度在X方向上移動,並且從聚光器40對晶錠60照射對於SiC具有穿透性之波長的脈衝雷射光線。樣品照射是藉由移動機構8使工作夾台24移動及旋轉,而在相對於第2定向平面70平行的方向、及將第2定向平面70作為基準並朝順時針方向及逆時針方向按每個預定角度(例如0.5度)傾斜之複數個
方向的每一個方向上進行。樣品照射能夠以例如以下的加工條件來進行。再者,下述散焦是從已將雷射光線的聚光點定位在上表面64的狀態使聚光器40朝向上表面64移動的移動量。
雷射光線的波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:3ns
聚光光斑直徑:φ 10μm
聚光透鏡之數值孔徑((NA):0.65
加工進給速度:150mm/秒
散焦:90μm
在加工進給方向檢測步驟中,在進行抽樣步驟後,會進行決定步驟。在決定步驟中,首先,是藉由移動機構8使工作夾台24移動至攝像機構12的下方,並藉由攝像機構12拍攝各樣品強度降低部74。如圖5所示,各樣品強度降低部74是由改質層76、及從改質層76沿c面在改質層76的兩側傳播之裂隙78所構成。在圖5中,以在相對於第2定向平面70平行之方向上所形成的樣品強度降低部74作為基準(0度),從上表面64側視之朝順時針方向傾斜而形成的樣品強度降低部74會附上「-」和傾斜角度一起,對於從上表面64側視之朝逆時針方向傾斜而形成的樣品強度降低部74會附上「+」和傾斜角度一起。並且,將藉由攝像機構12所拍攝到的圖像顯示在顯示機構14的畫面
上,並依據該圖像,量測在各樣品強度降低部74的每單位長度(例如10mm)中存在之節80的數量,且將節80的數量為0個的樣品強度降低部74延伸的方向(在本實施形態中為-3度的方向)作為加工進給方向來決定。
如此進行而決定的加工進給方向,會相對於晶錠之c軸嚴密地在直角方向上伸長。亦即,雖然原本第2定向平面70應該是與加工進給方向平行地形成的,但實際上會變得偏移3度而形成。本發明之發明人發現了以下之點:平行於加工進給方向的樣品強度降低部74,由於一方面會在同一c面上形成改層76與裂隙78所以會成為沒有節80之連續形成的構成,另一方面,相對於加工進給方向並未平行的樣品強度降低部74會成為在原子層級下橫越相鄰之2個c面而移動雷射光線的聚光點,所以會於改質層76與裂隙78間產生斷層而形成節80。因此,由於在加工進給方向檢測步驟中,會將節80之數量為0個的樣品強度降低部74延伸的方向作為加工進給方向來決定,所以能夠確認c軸的傾斜方向A與第2定向平面70是否成直角,並且能夠檢測與c軸的傾斜方向A嚴密地形成直角的加工進給方向。
在已實施加工進給方向檢測步驟後,實施剝離面形成步驟。在剝離面形成步驟中,首先,是藉由移動機構8使工作夾台24移動及旋轉,使相對於第2定向平面70由上表面64側視之朝逆時針方向傾斜3度的方向與X方向一致,並進行晶錠60與聚光器40的對位。接著,藉由聚光點位置調整機構使聚光器40在Z方向上移動,將聚光點調
整至距離上表面64相當於應生成之晶圓的厚度之深度的位置上。接著,如圖6所示,藉由X方向移動機構26使工作夾台24以預定的加工進給速度在X方向上移動,且藉由從聚光器40對晶錠60照射對於SiC具有穿透性之波長的脈衝雷射光線,以進行形成直線狀之強度降低部82的強度降低部形成加工。強度降低部形成加工會藉由以Y方向移動機構28將工作夾台24在Y方向上分度進給預定量,以在c軸的傾斜方向A上隔著間隔進行複數次。如此的剝離面形成步驟能夠以例如以下的加工條件來實施。
雷射光線的波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:3ns
聚光光斑直徑:φ 10μm
聚光透鏡之數值孔徑((NA):0.65
分度量:500μm
加工進給速度:150mm/秒
散焦:90μm
如圖7所示,藉由強度降低部形成加工而在相當於應生成之晶圓的厚度之深度上所形成的各強度降低部82,是由改質層84與裂隙86所構成。各強度降低部82由於平行於上表面64,所以各強度降低部82的改質層84會成為位於同一c面上。又,在晶錠60的內部形成改質層84之時,會從改質層84沿c面在改質層84的兩側傳播裂隙
86。在改質層84的單側傳播之裂隙86的長度為250μm左右,亦即裂隙86的長度Lc為500μm左右。因此,在剝離面形成步驟中,就算如上述地將Y方向之分度量Li設定為500μm左右,也能夠在相當於應生成之晶圓的厚度的深度上形成剝離面。
在實施剝離面形成步驟後,實施晶圓生成步驟。在晶圓生成步驟中,首先,是藉由移動機構8使工作夾台24移動至吸附片48的下方。接著,藉由Z方向移動機構使手臂44下降,以如圖8所示,使吸附片48的下表面緊貼於晶錠60的上表面。接著,作動吸引機構,使吸附片48的下表面吸附於晶錠60的上表面。接著,作動超音波振動賦與機構,對於吸附片48的下表面賦與超音波振動,並且作動馬達46使吸附片48旋轉。藉此,能夠以剝離面為界面將晶錠60的一部分剝離,並能夠有效率地生成所期望之厚度的晶圓88。藉由依序地實施在生成晶圓88後以設置於基台4上的研磨機構(圖未示)研磨晶錠60的上表面、剝離面形成步驟及晶圓生成步驟,而使能夠從晶錠60生成複數片晶圓,因此能夠減少被捨棄的素材量,並謀求生產性的提升。再者,由於加工進給方向檢測步驟在生成最初的晶圓88之時便已實施,所以對於同一晶錠60沒有重複實施的必要。
60:單晶SiC晶錠
62:周面
64:上表面
68:第1定向平面
70:第2定向平面
74:樣品強度降低部
76:改質層
78:裂隙
80:節
Claims (2)
- 一種晶圓生成方法,是從圓柱形狀之單晶SiC晶錠生成晶圓,該單晶SiC晶錠具備形成有第1定向平面及比該第1定向平面更短且正交於該第1定向平面的第2定向平面之圓筒形狀的周面、及圓形的上表面,且在該第2定向平面側具有c軸相對於與該上表面垂直的垂直軸朝該第2定向平面傾斜而在正交於該c軸的c面與該上表面間形成的偏角,該晶圓生成方法包含: 加工進給方向檢測步驟,確認該c軸的傾斜方向與該第2定向平面是否成直角,且檢測與該c軸之傾斜方向成直角的加工進給方向; 強度降低部形成步驟,藉由將雷射光線的聚光點定位在相當於應從該上表面生成之晶圓的厚度之深度的位置上,並且在該加工進給方向檢測步驟中所檢測出的前述加工進給方向上使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線,而在相當於應生成之晶圓的厚度的深度上形成由平行於該上表面的改質層與從該改質層沿該c面延伸的裂隙所構成之直線狀的強度降低部; 剝離面形成步驟,將該強度降低部形成步驟在與該加工進給方向正交的方向上隔著預定的間隔實施複數次來形成剝離面;及 晶圓生成步驟,實施該剝離面形成步驟後,以該剝離面作為界面來將該單晶SiC晶錠的一部分剝離以生成晶圓, 前述加工進給方向檢測步驟包含: 抽樣步驟,在相對於該第2定向平面平行的方向及以該第2定向平面作為基準而朝順時針方向及逆時針方向按每個預定角度傾斜的複數個方向的每一方向上進行樣品照射,而形成複數個由平行於該上表面的改質層與從該改質層沿該c面伸長的裂隙所構成之直線狀的樣品強度降低部,其中該樣品照射是將聚光點定位於距離該上表面預定深度的位置,使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線;及 決定步驟,藉由攝像機構拍攝該複數個樣品強度降低部的每一個,並依據藉由該攝像機構所拍攝到的圖像量測在該複數個樣品強度降低部的每一個的每一單位長度中存在之節的數量,並將節的數量為0個的樣品強度降低部延伸的方向作為加工進給方向來決定。
- 一種加工進給方向檢測方法,是檢測從圓柱形狀的單晶SiC晶錠生成晶圓之時的加工進給方向,該單晶SiC晶錠具備形成有第1定向平面及比該第1定向平面更短且正交於該第1定向平面的第2定向平面之圓筒形狀的周面、及圓形的上表面,且在該第2定向平面側具有c軸相對於與該上表面垂直的垂直軸朝該第2定向平面傾斜而在正交於該c軸的c面與該上表面間形成的偏角,該加工進給方向檢測方法具備有: 抽樣步驟,在相對於該第2定向平面平行的方向及以該第2定向平面作為基準而朝順時針方向及逆時針方向按每個預定角度傾斜的複數個方向的每一方向上進行樣品照射,而形成複數個由平行於該上表面的改質層與從該改質層沿該c面伸長的裂隙所構成之直線狀的樣品強度降低部,其中該樣品照射是將聚光點定位於距離該上表面預定深度的位置,使該單晶SiC晶錠與該聚光點相對地移動,並且對該單晶SiC晶錠照射對於SiC具有穿透性之波長的雷射光線;及 決定步驟,藉由攝像機構拍攝該複數個樣品強度降低部的每一個,並依據藉由該攝像機構所拍攝到的圖像量測在該複數個樣品強度降低部的每一個的每一單位長度中存在之節的數量,並將節的數量為0個的樣品強度降低部延伸的方向作為加工進給方向來決定。
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Also Published As
Publication number | Publication date |
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DE102017206178A1 (de) | 2017-10-12 |
KR20170116580A (ko) | 2017-10-19 |
US20170291255A1 (en) | 2017-10-12 |
JP6690983B2 (ja) | 2020-04-28 |
US10406635B2 (en) | 2019-09-10 |
KR102186219B1 (ko) | 2020-12-03 |
CN107283078B (zh) | 2020-10-09 |
MY183579A (en) | 2021-02-26 |
SG10201702360YA (en) | 2017-11-29 |
JP2017189870A (ja) | 2017-10-19 |
TW201801878A (zh) | 2018-01-16 |
CN107283078A (zh) | 2017-10-24 |
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