JP7034683B2 - 剥離装置 - Google Patents
剥離装置 Download PDFInfo
- Publication number
- JP7034683B2 JP7034683B2 JP2017228802A JP2017228802A JP7034683B2 JP 7034683 B2 JP7034683 B2 JP 7034683B2 JP 2017228802 A JP2017228802 A JP 2017228802A JP 2017228802 A JP2017228802 A JP 2017228802A JP 7034683 B2 JP7034683 B2 JP 7034683B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- generated
- peeling
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :60kHz
平均出力 :1.5W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.65
集光点の上下方向位置 :インゴットの第一の端面から300μm
送り速度 :200mm/s
インデックス量 :250~400μm
4:インゴット保持手段
6:超音波発振手段
6a:超音波発振手段の端面
8:水供給手段
10:剥離手段
50:インゴット
70:改質部
72:クラック
74:剥離層
76:ウエーハ
Claims (2)
- 透過性を有する波長のレーザー光線の集光点を生成すべきウエーハの厚みに相当する深さに位置づけてレーザー光線を照射して剥離層を形成したインゴットから生成すべきウエーハを剥離する剥離装置であって、
生成すべきウエーハを上にしてインゴットを保持するインゴット保持手段と、
生成すべきウエーハと対面する端面を有し超音波を発振する超音波発振手段と、
生成すべきウエーハと該超音波発振手段の該端面との間に水を供給する水供給手段と、
生成すべきウエーハを吸引保持しインゴットから生成すべきウエーハを剥離する剥離手段と、
から少なくとも構成され、
インゴットは、c軸とc軸に対し直交するc面とを有する単結晶SiCインゴットであり、
剥離層は、単結晶SiCに対して透過性を有する波長のレーザー光線の集光点を単結晶SiCインゴットの端面から生成すべきウエーハの厚みに相当する深さに位置づけて単結晶SiCインゴットにレーザー光線を照射してSiCがSiとCとに分離した改質部と改質部からc面に等方的に形成されるクラックとからなる剥離層である剥離装置。 - インゴットは、端面の垂線に対してc軸が傾きc面と端面とでオフ角が形成されている単結晶SiCインゴットであり、
剥離層は、オフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを生成し、オフ角が形成される方向にクラックの幅を超えない範囲で単結晶SiCインゴットと集光点とを相対的にインデックス送りしてオフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを順次生成した剥離層である請求項1記載の剥離装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017228802A JP7034683B2 (ja) | 2017-11-29 | 2017-11-29 | 剥離装置 |
KR1020180136849A KR102603360B1 (ko) | 2017-11-29 | 2018-11-08 | 박리 장치 |
US16/199,576 US11358306B2 (en) | 2017-11-29 | 2018-11-26 | Peeling apparatus |
CN201811414666.6A CN109834858B (zh) | 2017-11-29 | 2018-11-26 | 剥离装置 |
TW107142089A TWI794343B (zh) | 2017-11-29 | 2018-11-26 | 剝離裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017228802A JP7034683B2 (ja) | 2017-11-29 | 2017-11-29 | 剥離装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019102513A JP2019102513A (ja) | 2019-06-24 |
JP7034683B2 true JP7034683B2 (ja) | 2022-03-14 |
Family
ID=66634785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017228802A Active JP7034683B2 (ja) | 2017-11-29 | 2017-11-29 | 剥離装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11358306B2 (ja) |
JP (1) | JP7034683B2 (ja) |
KR (1) | KR102603360B1 (ja) |
CN (1) | CN109834858B (ja) |
TW (1) | TWI794343B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7442332B2 (ja) * | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
CN111451917B (zh) * | 2020-04-12 | 2021-08-20 | 湖南艾凯瑞斯智能科技有限公司 | 一种半导体加工晶圆划片机 |
JP7417464B2 (ja) * | 2020-05-01 | 2024-01-18 | 株式会社ディスコ | ウェーハの生成方法 |
CN111889895A (zh) * | 2020-07-02 | 2020-11-06 | 松山湖材料实验室 | 一种射流辅助的多脉宽激光晶锭剥离方法 |
JP7547105B2 (ja) * | 2020-07-29 | 2024-09-09 | 株式会社ディスコ | Si基板生成方法 |
JP2022096455A (ja) | 2020-12-17 | 2022-06-29 | 株式会社ディスコ | ウエーハの生成装置 |
JP2022117116A (ja) | 2021-01-29 | 2022-08-10 | 株式会社ディスコ | 剥離装置 |
JP2022180703A (ja) | 2021-05-25 | 2022-12-07 | 株式会社ディスコ | 剥離方法及び剥離装置 |
JP2023041017A (ja) | 2021-09-10 | 2023-03-23 | 株式会社ディスコ | 搬送装置および剥離装置 |
JP2023083924A (ja) | 2021-12-06 | 2023-06-16 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
JP2023170392A (ja) | 2022-05-19 | 2023-12-01 | 株式会社ディスコ | 剥離装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004136154A (ja) | 2002-10-15 | 2004-05-13 | Aska Corp | 超音波洗浄装置 |
US20040197433A1 (en) | 2001-12-17 | 2004-10-07 | Shouichi Terada | Film removing apparatus, film removing method and substrate processing system |
JP2007150164A (ja) | 2005-11-30 | 2007-06-14 | Renesas Technology Corp | 基板洗浄方法 |
JP2016124015A (ja) | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
JP2016132047A (ja) | 2015-01-16 | 2016-07-25 | 株式会社ディスコ | 被加工物の研削方法 |
JP2016225534A (ja) | 2015-06-02 | 2016-12-28 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017188586A (ja) | 2016-04-06 | 2017-10-12 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017189870A (ja) | 2016-04-11 | 2017-10-19 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH056277Y2 (ja) * | 1988-08-23 | 1993-02-18 | ||
US5194746A (en) * | 1988-12-18 | 1993-03-16 | Coen Guenther | Method and device for examining components with data digitized into a large number of gray levels |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP5509448B2 (ja) | 2009-09-07 | 2014-06-04 | 国立大学法人埼玉大学 | 基板スライス方法 |
CN102956530A (zh) * | 2011-08-31 | 2013-03-06 | 日本麦可罗尼克斯股份有限公司 | 晶片的分离方法及分离装置 |
JP2015008191A (ja) * | 2013-06-25 | 2015-01-15 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6366996B2 (ja) * | 2014-05-19 | 2018-08-01 | 株式会社ディスコ | リフトオフ方法 |
JP6349175B2 (ja) * | 2014-07-14 | 2018-06-27 | 株式会社ディスコ | リフトオフ方法及び超音波ホーン |
JP6399913B2 (ja) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395632B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395634B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
-
2017
- 2017-11-29 JP JP2017228802A patent/JP7034683B2/ja active Active
-
2018
- 2018-11-08 KR KR1020180136849A patent/KR102603360B1/ko active IP Right Grant
- 2018-11-26 TW TW107142089A patent/TWI794343B/zh active
- 2018-11-26 CN CN201811414666.6A patent/CN109834858B/zh active Active
- 2018-11-26 US US16/199,576 patent/US11358306B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040197433A1 (en) | 2001-12-17 | 2004-10-07 | Shouichi Terada | Film removing apparatus, film removing method and substrate processing system |
JP2004136154A (ja) | 2002-10-15 | 2004-05-13 | Aska Corp | 超音波洗浄装置 |
JP2007150164A (ja) | 2005-11-30 | 2007-06-14 | Renesas Technology Corp | 基板洗浄方法 |
JP2016124015A (ja) | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
JP2016132047A (ja) | 2015-01-16 | 2016-07-25 | 株式会社ディスコ | 被加工物の研削方法 |
JP2016225534A (ja) | 2015-06-02 | 2016-12-28 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017188586A (ja) | 2016-04-06 | 2017-10-12 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017189870A (ja) | 2016-04-11 | 2017-10-19 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20190063387A (ko) | 2019-06-07 |
CN109834858B (zh) | 2022-04-19 |
JP2019102513A (ja) | 2019-06-24 |
CN109834858A (zh) | 2019-06-04 |
US20190160708A1 (en) | 2019-05-30 |
KR102603360B1 (ko) | 2023-11-16 |
TW201926452A (zh) | 2019-07-01 |
TWI794343B (zh) | 2023-03-01 |
US11358306B2 (en) | 2022-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7034683B2 (ja) | 剥離装置 | |
JP7027215B2 (ja) | ウエーハの生成方法およびウエーハの生成装置 | |
JP6976828B2 (ja) | 剥離装置 | |
JP6959120B2 (ja) | 剥離装置 | |
JP7166893B2 (ja) | ウエーハの生成方法 | |
JP7073172B2 (ja) | ウエーハの生成方法 | |
KR102592790B1 (ko) | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 | |
KR102260340B1 (ko) | SiC 웨이퍼의 생성 방법 | |
JP7009224B2 (ja) | 平坦化方法 | |
KR20180094798A (ko) | SiC 웨이퍼의 생성 방법 | |
JP7046617B2 (ja) | ウエーハの生成方法およびウエーハの生成装置 | |
JP2021170613A (ja) | ウエーハの生成方法 | |
JP2023155640A (ja) | ウエーハの生成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210819 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210921 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220302 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7034683 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |