JP2017188586A - ウエーハの生成方法 - Google Patents
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- JP2017188586A JP2017188586A JP2016076734A JP2016076734A JP2017188586A JP 2017188586 A JP2017188586 A JP 2017188586A JP 2016076734 A JP2016076734 A JP 2016076734A JP 2016076734 A JP2016076734 A JP 2016076734A JP 2017188586 A JP2017188586 A JP 2017188586A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 79
- 235000012431 wafers Nutrition 0.000 description 42
- 238000003825 pressing Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
【解決手段】 SiCインゴットからウエーハを生成するウエーハの生成方法であって、第1改質層形成ステップと第2改質層形成ステップを含む。第1改質層形成ステップでは、第1のパワーを有する第レーザービームをインゴットに照射して、インゴットの第1の深さに第1改質層を点在して形成する。第2改質層形成ステップでは、第1のパワーより大きい第2のパワーを有する第2レーザービームをその集光点が第1の深さより深い位置となるように位置付け、更に第2レーザービームが第1改質層に重なるように位置付けて、第2レーザービームをウエーハに照射して、第1の深さの位置に第2改質層及び第2改質層からc面に沿って伸びるクラックを連続して形成する。
【選択図】図6
Description
波長 :1064nm
繰り返し周波数 :5kHz
平均出力 :0.125W
スポット径 :3μm(改質層が形成されるスポット径3μm)
集光位置 :第1の面(上面)11aから70μm
パワー密度 :1.13J/mm2
インデックス量 :250〜400μm
送り速度 :60mm/s
重なり率 :0%
波長 :1064nm
繰り返し周波数 :60kHz
平均出力 :1.5W
スポット径 :3μm(改質層が形成されるスポット径5.3μm)
集光位置 :第1の面(上面)11aから80μm
パワー密度 :3.53J/mm2
インデックス量 :250〜400μm
送り速度 :60mm/s
重なり率 :80%
11 SiCインゴット
11a 第1の面(上面)
11b 第2の面(下面)
13 第1のオリエンテーションフラット
15 第2のオリエンテーションフラット
17 第1の面の垂線
19 c軸
21 c面
23 第2改質層
23a 第1改質層
25 クラック
26 支持テーブル
30 レーザービーム照射ユニット
36 集光器(レーザーヘッド)
54 押圧機構
56 ヘッド
58 押圧部材
F1,F2 集光点
Claims (1)
- 第1の面と、該第1の面と反対側の第2の面と、該第1の面から該第2の面に至るc軸と、該c軸に直交するc面とを有するSiCインゴットからウエーハを生成するウエーハの生成方法であって、
SiCインゴットに対して透過性を有する波長で且つ第1のパワーを有する第1レーザービームの第1集光点を該第1の面から生成するウエーハの厚みに相当する第1の深さに位置付けると共に、該第1の面の垂線に対して該c軸がオフ角分傾き、該第1の面と該c面との間にオフ角が形成される第2の方向と直交する第1の方向に該第1レーザービームの該第1集光点を相対的に移動しながら該第1レーザービームを該第1の面に照射し、該第1の面に平行な第1改質層を該第1改質層同士が重ならないように該第1の深さに点在して形成する第1改質層形成ステップと、
該第2の方向に該第1集光点を相対的に移動して所定量インデックス送りする第1インデックスステップと、
該第1改質層形成ステップ及び該第1インデックスステップを実施した後、該インゴットに対して透過性を有する波長で且つ該第1のパワーより大きい第2のパワーを有する第2レーザービームの第2集光点を該第1の面から該第1の深さより深い第2の深さに位置付けると共に、該第2レーザービームのビームスポットが該第1改質層と重なるように位置付けて、該第2集光点と該インゴットとを該第1の方向に相対的に移動しながら該第2レーザービームを該第1の面に照射し、該第1の深さに該第1の面に平行な該第1の方向に伸びる直線状の第2改質層を形成すると共に該第2改質層から該c面に沿って伸長するクラックを形成する第2改質層形成ステップと、
該第2の方向に該第2集光点を相対的に移動して該所定量インデックス送りする第2インデックスステップと、
該第2改質層形成ステップ及び該第2インデックスステップを実施した後、該第2改質層及び該クラックから成る分離起点からウエーハの厚みに相当する板状物を該SiCインゴットから剥離してSiCウエーハを生成するウエーハ剥離ステップと、
を備えたことを特徴とするウエーハの生成方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2016076734A JP6604891B2 (ja) | 2016-04-06 | 2016-04-06 | ウエーハの生成方法 |
TW106106135A TWI703027B (zh) | 2016-04-06 | 2017-02-23 | 晶圓的生成方法 |
MYPI2017700964A MY187223A (en) | 2016-04-06 | 2017-03-22 | Wafer producing method |
SG10201702358YA SG10201702358YA (en) | 2016-04-06 | 2017-03-23 | Wafer producing method |
US15/472,945 US9868177B2 (en) | 2016-04-06 | 2017-03-29 | Wafer producing method |
KR1020170039867A KR102185243B1 (ko) | 2016-04-06 | 2017-03-29 | 웨이퍼의 생성 방법 |
DE102017205694.0A DE102017205694B4 (de) | 2016-04-06 | 2017-04-04 | Waferherstellungsverfahren |
CN201710216651.8A CN107262945B (zh) | 2016-04-06 | 2017-04-05 | 晶片的生成方法 |
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JP2016076734A JP6604891B2 (ja) | 2016-04-06 | 2016-04-06 | ウエーハの生成方法 |
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JP2017188586A true JP2017188586A (ja) | 2017-10-12 |
JP6604891B2 JP6604891B2 (ja) | 2019-11-13 |
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US (1) | US9868177B2 (ja) |
JP (1) | JP6604891B2 (ja) |
KR (1) | KR102185243B1 (ja) |
CN (1) | CN107262945B (ja) |
DE (1) | DE102017205694B4 (ja) |
MY (1) | MY187223A (ja) |
SG (1) | SG10201702358YA (ja) |
TW (1) | TWI703027B (ja) |
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KR20190056306A (ko) * | 2017-11-16 | 2019-05-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼 생성 장치 |
KR20190059206A (ko) * | 2017-11-22 | 2019-05-30 | 가부시기가이샤 디스코 | SiC 잉곳의 성형 방법 |
JP2019102513A (ja) * | 2017-11-29 | 2019-06-24 | 株式会社ディスコ | 剥離装置 |
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JP6246444B1 (ja) * | 2016-05-17 | 2017-12-13 | エルシード株式会社 | 加工対象材料の切断方法 |
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JP2019091852A (ja) * | 2017-11-16 | 2019-06-13 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
KR102491739B1 (ko) | 2017-11-16 | 2023-01-25 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼 생성 장치 |
KR20190059206A (ko) * | 2017-11-22 | 2019-05-30 | 가부시기가이샤 디스코 | SiC 잉곳의 성형 방법 |
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JP7034683B2 (ja) | 2017-11-29 | 2022-03-14 | 株式会社ディスコ | 剥離装置 |
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US11152211B2 (en) | 2018-04-20 | 2021-10-19 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
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US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10770351B2 (en) | 2018-05-31 | 2020-09-08 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
JP7187215B2 (ja) | 2018-08-28 | 2022-12-12 | 株式会社ディスコ | SiC基板の加工方法 |
JP2020035821A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社ディスコ | SiC基板の加工方法 |
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US20170291254A1 (en) | 2017-10-12 |
TW201736071A (zh) | 2017-10-16 |
JP6604891B2 (ja) | 2019-11-13 |
US9868177B2 (en) | 2018-01-16 |
CN107262945B (zh) | 2020-09-01 |
DE102017205694A1 (de) | 2017-10-12 |
KR102185243B1 (ko) | 2020-12-01 |
MY187223A (en) | 2021-09-13 |
DE102017205694B4 (de) | 2021-12-09 |
KR20170114937A (ko) | 2017-10-16 |
TWI703027B (zh) | 2020-09-01 |
SG10201702358YA (en) | 2017-11-29 |
CN107262945A (zh) | 2017-10-20 |
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