JP2012214379A5 - - Google Patents

Download PDF

Info

Publication number
JP2012214379A5
JP2012214379A5 JP2012137108A JP2012137108A JP2012214379A5 JP 2012214379 A5 JP2012214379 A5 JP 2012214379A5 JP 2012137108 A JP2012137108 A JP 2012137108A JP 2012137108 A JP2012137108 A JP 2012137108A JP 2012214379 A5 JP2012214379 A5 JP 2012214379A5
Authority
JP
Japan
Prior art keywords
silicon carbide
single crystal
sic
less
dislocation density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012137108A
Other languages
English (en)
Japanese (ja)
Other versions
JP5410572B2 (ja
JP2012214379A (ja
Filing date
Publication date
Priority claimed from US10/957,806 external-priority patent/US7314520B2/en
Application filed filed Critical
Publication of JP2012214379A publication Critical patent/JP2012214379A/ja
Publication of JP2012214379A5 publication Critical patent/JP2012214379A5/ja
Application granted granted Critical
Publication of JP5410572B2 publication Critical patent/JP5410572B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2012137108A 2004-10-04 2012-06-18 低１ｃらせん転位の３インチ炭化珪素ウェハ Expired - Lifetime JP5410572B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/957,806 2004-10-04
US10/957,806 US7314520B2 (en) 2004-10-04 2004-10-04 Low 1c screw dislocation 3 inch silicon carbide wafer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008202193A Division JP5572295B2 (ja) 2004-10-04 2008-08-05 低１ｃらせん転位の３インチ炭化珪素ウェハ

Publications (3)

Publication Number Publication Date
JP2012214379A JP2012214379A (ja) 2012-11-08
JP2012214379A5 true JP2012214379A5 (enExample) 2012-12-20
JP5410572B2 JP5410572B2 (ja) 2014-02-05

Family

ID=35925857

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007534681A Pending JP2008515748A (ja) 2004-10-04 2005-09-27 低１ｃらせん転位の３インチ炭化珪素ウェハ
JP2008202193A Expired - Lifetime JP5572295B2 (ja) 2004-10-04 2008-08-05 低１ｃらせん転位の３インチ炭化珪素ウェハ
JP2012137108A Expired - Lifetime JP5410572B2 (ja) 2004-10-04 2012-06-18 低１ｃらせん転位の３インチ炭化珪素ウェハ

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2007534681A Pending JP2008515748A (ja) 2004-10-04 2005-09-27 低１ｃらせん転位の３インチ炭化珪素ウェハ
JP2008202193A Expired - Lifetime JP5572295B2 (ja) 2004-10-04 2008-08-05 低１ｃらせん転位の３インチ炭化珪素ウェハ

Country Status (7)

Country Link
US (3) US7314520B2 (enExample)
EP (2) EP2584071B1 (enExample)
JP (3) JP2008515748A (enExample)
KR (1) KR20070054719A (enExample)
CN (1) CN101061262B (enExample)
TW (1) TWI313892B (enExample)
WO (1) WO2006041659A2 (enExample)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6814801B2 (en) 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7563321B2 (en) * 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
JP5562641B2 (ja) 2006-09-14 2014-07-30 クリー インコーポレイテッド マイクロパイプ・フリーの炭化ケイ素およびその製造方法
JP2010087397A (ja) * 2008-10-02 2010-04-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
KR20120024526A (ko) 2009-05-11 2012-03-14 스미토모덴키고교가부시키가이샤 반도체 기판의 제조방법
CA2764900A1 (en) 2009-10-30 2011-05-05 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide substrate and silicon carbide substrate
CN102449734A (zh) 2009-10-30 2012-05-09 住友电气工业株式会社 制造碳化硅衬底的方法和碳化硅衬底
CN102388433A (zh) 2009-11-13 2012-03-21 住友电气工业株式会社 制造半导体衬底的方法
WO2011065122A1 (ja) * 2009-11-24 2011-06-03 住友電気工業株式会社 半導体基板の製造方法
JPWO2011074308A1 (ja) 2009-12-16 2013-04-25 住友電気工業株式会社 炭化珪素基板
JP2011146570A (ja) * 2010-01-15 2011-07-28 Sumitomo Electric Ind Ltd 炭化珪素基板
US8435866B2 (en) 2010-02-05 2013-05-07 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide substrate
JPWO2011108137A1 (ja) 2010-03-02 2013-06-20 住友電気工業株式会社 炭化珪素基板の製造方法
JP2011210864A (ja) * 2010-03-29 2011-10-20 Sumitomo Electric Ind Ltd 半導体基板
JP2011243619A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
US8445386B2 (en) * 2010-05-27 2013-05-21 Cree, Inc. Smoothing method for semiconductor material and wafers produced by same
JP5447206B2 (ja) 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
JP2012004494A (ja) 2010-06-21 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法および製造装置
CN102687238A (zh) * 2010-09-16 2012-09-19 住友电气工业株式会社 用于制造半导体器件的方法
JP2012089613A (ja) 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板の製造方法
JP2012089612A (ja) 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板
JP2012089639A (ja) * 2010-10-19 2012-05-10 Sumitomo Electric Ind Ltd 単結晶炭化珪素基板を有する複合基板
CA2779961A1 (en) 2010-12-27 2012-06-27 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
US10094041B2 (en) 2011-07-04 2018-10-09 Toyota Jidosha Kabushiki Kaisha SiC single crystal and method of producing same
KR101530057B1 (ko) 2011-08-29 2015-06-18 신닛테츠스미킨 카부시키카이샤 탄화규소 단결정 기판 및 그 제조 방법
JP5696630B2 (ja) 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
JP5750363B2 (ja) * 2011-12-02 2015-07-22 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5810894B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
US8912550B2 (en) 2011-12-22 2014-12-16 Sumitomo Electric Industries, Ltd. Dislocations in SiC semiconductor substrate
JP5810893B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
JP5810892B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
US8741413B2 (en) 2012-04-20 2014-06-03 Ii-Vi Incorporated Large diameter, high quality SiC single crystals, method and apparatus
JP5668724B2 (ja) * 2012-06-05 2015-02-12 トヨタ自動車株式会社 ＳｉＣ単結晶のインゴット、ＳｉＣ単結晶、及び製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
CN104704150B (zh) * 2012-11-15 2018-06-12 新日铁住金株式会社 碳化硅单晶基板及其制法
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
JP5857986B2 (ja) * 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
JP6183010B2 (ja) * 2013-07-03 2017-08-23 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
KR102266585B1 (ko) * 2013-09-06 2021-06-18 지티에이티 코포레이션 벌크 탄화규소를 제조하기 위한 방법
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
WO2016117251A1 (ja) 2015-01-21 2016-07-28 住友電気工業株式会社 結晶成長装置、炭化珪素単結晶の製造方法、炭化珪素単結晶基板および炭化珪素エピタキシャル基板
JP6592961B2 (ja) * 2015-05-19 2019-10-23 セイコーエプソン株式会社 炭化ケイ素基板および炭化ケイ素基板の製造方法
JP6597065B2 (ja) 2015-08-31 2019-10-30 株式会社デンソー 炭化珪素単結晶、炭化珪素単結晶ウェハ、炭化珪素単結晶エピタキシャルウェハ、電子デバイス
JP5967281B2 (ja) * 2015-09-15 2016-08-10 住友電気工業株式会社 半導体基板
JP6008030B2 (ja) * 2015-09-15 2016-10-19 住友電気工業株式会社 半導体基板
JP5967280B2 (ja) * 2015-09-15 2016-08-10 住友電気工業株式会社 半導体基板
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
JP6132059B2 (ja) * 2016-07-01 2017-05-24 住友電気工業株式会社 半導体基板
JP6132058B2 (ja) * 2016-07-01 2017-05-24 住友電気工業株式会社 半導体基板
DE112017005034T5 (de) * 2016-10-04 2019-06-27 Sumitomo Electric Industries, Ltd. Siliziumkarbid-epitaxiesubstrat und verfahren zur herstellung einer siliziumkarbid-halbleitervorrichtung
JP6768491B2 (ja) * 2016-12-26 2020-10-14 昭和電工株式会社 ＳｉＣウェハ及びＳｉＣウェハの製造方法
WO2018183585A1 (en) 2017-03-29 2018-10-04 Pallidus, Inc. Sic volumetric shapes and methods of forming boules
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
KR102276450B1 (ko) 2019-10-29 2021-07-12 에스케이씨 주식회사 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템
CN110919465A (zh) * 2019-11-08 2020-03-27 中国科学院上海硅酸盐研究所 无损伤、高平面度单晶碳化硅平面光学元件及其制备方法
EP4081674A1 (en) 2019-12-27 2022-11-02 Wolfspeed, Inc. Large diameter silicon carbide wafers
EP4248002A1 (en) * 2020-11-19 2023-09-27 Zadient Technologies SAS Improved furnace apparatus for crystal production
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
EP4060099A1 (de) 2021-03-19 2022-09-21 SiCrystal GmbH Herstellungsverfahren für einen sic-volumeneinkristall homogener schraubenversetzungsverteilung und sic-substrat
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387503A (en) 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
JPS58142629A (ja) 1982-02-17 1983-08-24 Toshiba Corp 対角型マトリクス回路網
US4543594A (en) 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
JPS59105354A (ja) 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
US4894791A (en) 1986-02-10 1990-01-16 Dallas Semiconductor Corporation Delay circuit for a monolithic integrated circuit and method for adjusting delay of same
US4799126A (en) 1987-04-16 1989-01-17 Navistar International Transportation Corp. Overload protection for D.C. circuits
GB2206010A (en) 1987-06-08 1988-12-21 Philips Electronic Associated Differential amplifier and current sensing circuit including such an amplifier
US4777471A (en) 1987-06-22 1988-10-11 Precision Microdevices Inc. Apparatus for multiple link trimming in precision integrated circuits
US4860185A (en) 1987-08-21 1989-08-22 Electronic Research Group, Inc. Integrated uninterruptible power supply for personal computers
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5021861A (en) 1990-05-23 1991-06-04 North Carolina State University Integrated circuit power device with automatic removal of defective devices and method of fabricating same
US5958132A (en) 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JP2804860B2 (ja) * 1991-04-18 1998-09-30 新日本製鐵株式会社 ＳｉＣ単結晶およびその成長方法
US5539217A (en) 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
US6077619A (en) 1994-10-31 2000-06-20 Sullivan; Thomas M. Polycrystalline silicon carbide ceramic wafer and substrate
US5766343A (en) 1995-01-17 1998-06-16 The United States Of America As Represented By The Secretary Of The Navy Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same
US5883403A (en) 1995-10-03 1999-03-16 Hitachi, Ltd. Power semiconductor device
US5663580A (en) 1996-03-15 1997-09-02 Abb Research Ltd. Optically triggered semiconductor device
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6562130B2 (en) 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US5873937A (en) 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
JP3003027B2 (ja) 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6165874A (en) * 1997-07-03 2000-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
TW440989B (en) 1997-09-05 2001-06-16 Nippon Pillar Packing Semiconductor wafer holder with CVD silicon carbide film coating
JP3043675B2 (ja) 1997-09-10 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法
JPH11135512A (ja) 1997-10-31 1999-05-21 Mitsubishi Electric Corp 電力用半導体装置及びその製造方法
DE69916177T2 (de) * 1998-05-29 2005-04-14 Denso Corp., Kariya Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
JP2917149B1 (ja) 1998-07-13 1999-07-12 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
DE60033829T2 (de) 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
US6824611B1 (en) 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6508880B2 (en) 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
JP5179690B2 (ja) 2000-03-13 2013-04-10 トゥー‐シックス・インコーポレイテッド 炭化ケイ素の大型単結晶を作るための軸芯勾配輸送装置及び方法
EP1439246B1 (en) 2000-04-07 2008-06-25 Hoya Corporation Process for producing silicon carbide single crystal
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
JP3761418B2 (ja) * 2001-05-10 2006-03-29 Ｈｏｙａ株式会社 化合物結晶およびその製造法
TW583354B (en) 2001-05-25 2004-04-11 Mitsui Shipbuilding Eng Method for producing amorphous SiC wafer
US20020189536A1 (en) 2001-06-15 2002-12-19 Bridgestone Corporation Silicon carbide single crystal and production thereof
US6488771B1 (en) * 2001-09-25 2002-12-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low-defect single crystal heteroepitaxial films
DE10247017B4 (de) 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
JP3776374B2 (ja) * 2002-04-30 2006-05-17 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法
US6657276B1 (en) 2001-12-10 2003-12-02 Advanced Micro Devices, Inc. Shallow trench isolation (STI) region with high-K liner and method of formation
JP3895978B2 (ja) * 2001-12-12 2007-03-22 新日本製鐵株式会社 炭化珪素単結晶育成用種結晶、炭化珪素単結晶インゴット、及びこれらの製造方法
JP2003183097A (ja) * 2001-12-17 2003-07-03 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法
JP3881562B2 (ja) 2002-02-22 2007-02-14 三井造船株式会社 ＳｉＣモニタウェハ製造方法
ATE491055T1 (de) * 2002-04-04 2010-12-15 Nippon Steel Corp Impfkristall aus siliciumcarbid-einkristall und verfahren zur herstellung eines stabs damit
US7147715B2 (en) 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
JP2004031470A (ja) 2002-06-24 2004-01-29 Matsushita Electric Ind Co Ltd 単結晶ＳｉＣを用いた半導体デバイスと、それを用いた電力変換装置
US7220313B2 (en) 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US6814801B2 (en) 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US6783592B2 (en) * 2002-10-10 2004-08-31 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
FR2852974A1 (fr) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator Procede de fabrication de cristaux monocristallins
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7192482B2 (en) 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
JP5562641B2 (ja) * 2006-09-14 2014-07-30 クリー インコーポレイテッド マイクロパイプ・フリーの炭化ケイ素およびその製造方法
US7449065B1 (en) * 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
JP5524235B2 (ja) * 2009-11-06 2014-06-18 日本碍子株式会社 半導体素子用エピタキシャル基板および半導体素子用エピタキシャル基板の製造方法
US8741413B2 (en) * 2012-04-20 2014-06-03 Ii-Vi Incorporated Large diameter, high quality SiC single crystals, method and apparatus

Similar Documents

Publication Publication Date Title
JP2012214379A5 (enExample)
JP2008515749A5 (enExample)
JP2008515748A5 (enExample)
JP6373443B2 (ja) 大径炭化ケイ素単結晶及び装置、並びに、これらの製造方法
EP2264223A3 (en) Micropipe-free silicon carbide and related method of manufacture
TWI671438B (zh) ＳｉＣ（碳化矽）種晶之加工變質層的除去方法、ＳｉＣ種晶及ＳｉＣ基板之製造方法
JP2011116653A5 (enExample)
RU2008152451A (ru) Кристалл sic диаметром 100 мм и способ его выращивания на внеосевой затравке
TW200615406A (en) Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
JP4926556B2 (ja) 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板
CN208649506U (zh) 一种碳化硅晶体的生长装置
JP7056979B2 (ja) 炭化珪素インゴットの製造方法及び炭化珪素インゴット製造用システム
EP2604729A1 (en) Method for manufacturing a silicon carbide wafer and respective equipment
CN109957841A (zh) 碳化硅单晶的制造方法
WO2016006442A1 (ja) 炭化珪素単結晶の製造方法および炭化珪素基板
JP2014144880A5 (enExample)
JP5375783B2 (ja) 炭化珪素単結晶の製造方法
TWI542741B (zh) A method for preparing a single crystal crystal for growing a multi-type compound
CN103541000B (zh) 一种制备氮化硼单晶的装置及方法
JP2024510617A (ja) 不均質ならせん転位分布のＳｉＣバルク単結晶の製造方法及びＳｉＣ基板
JP2009280436A (ja) 炭化珪素単結晶薄膜の製造方法
Wang et al. Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system
JP2005132703A (ja) 炭化珪素基板の製造方法および炭化珪素基板
JP2011201755A (ja) 単結晶炭化珪素の製造方法
Gang et al. Effects of Seed-Holder Shape on the Initial Growth of AlN Single Crystals by Homoepitaxial PVT Method.