JP6768491B2 - SiCウェハ及びSiCウェハの製造方法 - Google Patents
SiCウェハ及びSiCウェハの製造方法 Download PDFInfo
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- JP6768491B2 JP6768491B2 JP2016250804A JP2016250804A JP6768491B2 JP 6768491 B2 JP6768491 B2 JP 6768491B2 JP 2016250804 A JP2016250804 A JP 2016250804A JP 2016250804 A JP2016250804 A JP 2016250804A JP 6768491 B2 JP6768491 B2 JP 6768491B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000000149 penetrating effect Effects 0.000 claims description 111
- 239000013078 crystal Substances 0.000 claims description 91
- 230000012010 growth Effects 0.000 claims description 84
- 230000035515 penetration Effects 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 91
- 229910010271 silicon carbide Inorganic materials 0.000 description 88
- 235000012431 wafers Nutrition 0.000 description 80
- 230000007547 defect Effects 0.000 description 44
- 238000000034 method Methods 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 34
- 230000007423 decrease Effects 0.000 description 8
- 230000001066 destructive effect Effects 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004854 X-ray topography Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004581 coalescence Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
すなわち、本発明は、上記課題を解決するため、以下の手段を提供する。
図1は、本発明の一態様にかかるSiCウェハの断面模式図である。図1に示すSiCウェハ1は、第1の面1aと第2の面1bを貫く貫通転位2を有する。
本発明の一態様に係るSiCウェハの製造方法は、貫通転位の面密度が1.5個/mm2以下の種結晶を作製する準備工程と、坩堝内で前記種結晶から口径拡大させずに、かつ、結晶成長面と前記坩堝内の等温面とが平行になるように結晶成長を行う結晶成長工程と、前記結晶成長工程で得られたSiCインゴットをスライスする分断工程と、を有する。
まず、準備工程として種結晶を準備する。種結晶は、RAF(Repeated a−face)法による得る。RAF法とは、a面成長を少なくとも1回以上行った後に、c面成長を行うという方法である。RAF法を用いると、螺旋転位及び積層欠陥をほとんどもたないSiC単結晶を作製できる。これはa面成長を行った後のSiC単結晶が有する欠陥は、c面成長では基底面方向の欠陥となり、引き継がれないためである。RAF法の詳細については、例えば特開2003−321298号公報等に記載がある。
次いで、得られた種結晶を基に結晶成長を行い、SiCインゴットを作製する。結晶成長工程における貫通転位の数の増減の原因は、貫通転位同士の合体に限られず、貫通転位から基底面転位への変換等も原因の一つである。
最後に、得られたSiCインゴットを分断する。SiCインゴットの分断は、公知の方法を用いることができる。例えば、ワイヤーソー等を用いることができる。
Claims (4)
- 第1の面に表出する貫通転位の貫通転位密度と、第2の面に表出する貫通転位の貫通転位密度との差が、前記第1の面と前記第2の面とのうち貫通転位密度が高い側の面における貫通転位密度の10%以下であり、
前記第1の面と前記第2の面とのうち貫通転位密度が高い側の面に表出する貫通転位のうち90%以上が、貫通転位密度が低い側の面まで延在し、
前記第1の面と前記第2の面とのうち貫通転位密度が高い側の面に表出する貫通刃状転位と貫通螺旋転位の合計密度が、1.5個/mm 2 以下である、SiCウェハ。 - 第1の面と、第2の面の貫通転位数が実質同数である請求項1に記載のSiCウェハ。
- 第1の面に表出する貫通転位密度と第2の面に表出する貫通転位密度との差が、0.02個/mm2以下である請求項1又は2に記載のSiCウェハ。
- 貫通転位の面密度が1.5個/mm2以下の種結晶を作製する準備工程と、
坩堝内で前記種結晶から口径拡大させずに、かつ、結晶成長面と前記坩堝内の等温面とが平行になるように結晶成長を行う結晶成長工程と、
前記結晶成長工程で得られたSiCインゴットをスライスする分断工程と、を有するSiCウェハの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2016250804A JP6768491B2 (ja) | 2016-12-26 | 2016-12-26 | SiCウェハ及びSiCウェハの製造方法 |
PCT/JP2017/046170 WO2018123881A1 (ja) | 2016-12-26 | 2017-12-22 | SiCウェハ及びSiCウェハの製造方法 |
CN201780079551.3A CN110268106B (zh) | 2016-12-26 | 2017-12-22 | SiC晶片及SiC晶片的制造方法 |
DE112017006543.7T DE112017006543T5 (de) | 2016-12-26 | 2017-12-22 | SiC-Wafer und Verfahren zur Herstellung des SiC-Wafers |
US16/471,061 US20200020777A1 (en) | 2016-12-26 | 2017-12-22 | SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER |
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JP2016250804A JP6768491B2 (ja) | 2016-12-26 | 2016-12-26 | SiCウェハ及びSiCウェハの製造方法 |
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JP2018104220A JP2018104220A (ja) | 2018-07-05 |
JP6768491B2 true JP6768491B2 (ja) | 2020-10-14 |
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US (1) | US20200020777A1 (ja) |
JP (1) | JP6768491B2 (ja) |
CN (1) | CN110268106B (ja) |
DE (1) | DE112017006543T5 (ja) |
WO (1) | WO2018123881A1 (ja) |
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JP6768491B2 (ja) | 2016-12-26 | 2020-10-14 | 昭和電工株式会社 | SiCウェハ及びSiCウェハの製造方法 |
JP7170460B2 (ja) * | 2018-08-13 | 2022-11-14 | 昭和電工株式会社 | SiC単結晶の評価方法、及び品質検査方法 |
CN113981537A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶种及其制造方法、碳化硅晶体的制造方法 |
JP7294502B1 (ja) | 2022-06-03 | 2023-06-20 | 株式会社レゾナック | SiC単結晶基板 |
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JP3776374B2 (ja) | 2002-04-30 | 2006-05-17 | 株式会社豊田中央研究所 | SiC単結晶の製造方法,並びにエピタキシャル膜付きSiCウエハの製造方法 |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP4967808B2 (ja) * | 2007-05-22 | 2012-07-04 | 株式会社デンソー | 炭化珪素単結晶の製造装置および製造方法 |
JP4978637B2 (ja) * | 2009-02-12 | 2012-07-18 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
JP5276068B2 (ja) * | 2010-08-26 | 2013-08-28 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
DE112013002107B4 (de) * | 2012-04-20 | 2019-04-04 | Toyota Jidosha Kabushiki Kaisha | SiC-Einkristall-Herstellungsverfahren |
JP6124287B2 (ja) * | 2013-03-04 | 2017-05-10 | 一般財団法人電力中央研究所 | 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法 |
JP5931825B2 (ja) * | 2013-09-20 | 2016-06-08 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶インゴットの製造方法 |
KR101823216B1 (ko) * | 2014-09-30 | 2018-01-29 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 탄화규소 단결정 웨이퍼 및 탄화규소 단결정 잉곳의 제조 방법 |
KR101960209B1 (ko) * | 2015-02-18 | 2019-03-19 | 쇼와 덴코 가부시키가이샤 | 탄화규소 단결정 잉곳의 제조 방법 및 탄화규소 단결정 잉곳 |
JPWO2017057742A1 (ja) * | 2015-10-02 | 2018-07-19 | 昭和電工株式会社 | SiC単結晶インゴット |
JP6768491B2 (ja) | 2016-12-26 | 2020-10-14 | 昭和電工株式会社 | SiCウェハ及びSiCウェハの製造方法 |
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- 2016-12-26 JP JP2016250804A patent/JP6768491B2/ja active Active
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2017
- 2017-12-22 CN CN201780079551.3A patent/CN110268106B/zh active Active
- 2017-12-22 DE DE112017006543.7T patent/DE112017006543T5/de active Pending
- 2017-12-22 WO PCT/JP2017/046170 patent/WO2018123881A1/ja active Application Filing
- 2017-12-22 US US16/471,061 patent/US20200020777A1/en active Pending
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Publication number | Publication date |
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DE112017006543T5 (de) | 2019-09-26 |
US20200020777A1 (en) | 2020-01-16 |
CN110268106A (zh) | 2019-09-20 |
CN110268106B (zh) | 2021-05-11 |
JP2018104220A (ja) | 2018-07-05 |
WO2018123881A1 (ja) | 2018-07-05 |
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