CN110268106A - SiC晶片及SiC晶片的制造方法 - Google Patents
SiC晶片及SiC晶片的制造方法 Download PDFInfo
- Publication number
- CN110268106A CN110268106A CN201780079551.3A CN201780079551A CN110268106A CN 110268106 A CN110268106 A CN 110268106A CN 201780079551 A CN201780079551 A CN 201780079551A CN 110268106 A CN110268106 A CN 110268106A
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- China
- Prior art keywords
- face
- dislocation
- threading dislocation
- sic wafer
- exposed
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000035515 penetration Effects 0.000 claims abstract description 51
- 239000013078 crystal Substances 0.000 claims description 92
- 230000012010 growth Effects 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 27
- 230000011218 segmentation Effects 0.000 claims description 5
- 229910052571 earthenware Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 99
- 229910010271 silicon carbide Inorganic materials 0.000 description 96
- 235000012431 wafers Nutrition 0.000 description 75
- 230000007547 defect Effects 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 36
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000009738 saturating Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009647 facial growth Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016250804A JP6768491B2 (ja) | 2016-12-26 | 2016-12-26 | SiCウェハ及びSiCウェハの製造方法 |
JP2016-250804 | 2016-12-26 | ||
PCT/JP2017/046170 WO2018123881A1 (ja) | 2016-12-26 | 2017-12-22 | SiCウェハ及びSiCウェハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110268106A true CN110268106A (zh) | 2019-09-20 |
CN110268106B CN110268106B (zh) | 2021-05-11 |
Family
ID=62707539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780079551.3A Active CN110268106B (zh) | 2016-12-26 | 2017-12-22 | SiC晶片及SiC晶片的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200020777A1 (zh) |
JP (1) | JP6768491B2 (zh) |
CN (1) | CN110268106B (zh) |
DE (1) | DE112017006543T5 (zh) |
WO (1) | WO2018123881A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017006543T5 (de) | 2016-12-26 | 2019-09-26 | Denso Corporation | SiC-Wafer und Verfahren zur Herstellung des SiC-Wafers |
CN113981537A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶种及其制造方法、碳化硅晶体的制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7170460B2 (ja) * | 2018-08-13 | 2022-11-14 | 昭和電工株式会社 | SiC単結晶の評価方法、及び品質検査方法 |
JP7294502B1 (ja) | 2022-06-03 | 2023-06-20 | 株式会社レゾナック | SiC単結晶基板 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101061262A (zh) * | 2004-10-04 | 2007-10-24 | 格里公司 | 低1c螺旋位错3英寸碳化硅晶片 |
JP2008290885A (ja) * | 2007-05-22 | 2008-12-04 | Denso Corp | 炭化珪素単結晶の製造装置および製造方法 |
JP2014169944A (ja) * | 2013-03-04 | 2014-09-18 | Central Research Institute Of Electric Power Industry | 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法 |
JP2015059072A (ja) * | 2013-09-20 | 2015-03-30 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ、及び炭化珪素単結晶インゴットの製造方法 |
CN105658846A (zh) * | 2014-09-30 | 2016-06-08 | 新日铁住金高新材料株式会社 | 碳化硅单晶晶片、和碳化硅单晶锭的制造方法 |
CN107208311A (zh) * | 2015-02-18 | 2017-09-26 | 新日铁住金株式会社 | 碳化硅单晶块的制造方法和碳化硅单晶块 |
CN108138359A (zh) * | 2015-10-02 | 2018-06-08 | 昭和电工株式会社 | SiC单晶锭 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3776374B2 (ja) | 2002-04-30 | 2006-05-17 | 株式会社豊田中央研究所 | SiC単結晶の製造方法,並びにエピタキシャル膜付きSiCウエハの製造方法 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
JP4978637B2 (ja) * | 2009-02-12 | 2012-07-18 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
JP5276068B2 (ja) * | 2010-08-26 | 2013-08-28 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
DE112013002107B4 (de) * | 2012-04-20 | 2019-04-04 | Toyota Jidosha Kabushiki Kaisha | SiC-Einkristall-Herstellungsverfahren |
JP6768491B2 (ja) | 2016-12-26 | 2020-10-14 | 昭和電工株式会社 | SiCウェハ及びSiCウェハの製造方法 |
-
2016
- 2016-12-26 JP JP2016250804A patent/JP6768491B2/ja active Active
-
2017
- 2017-12-22 CN CN201780079551.3A patent/CN110268106B/zh active Active
- 2017-12-22 WO PCT/JP2017/046170 patent/WO2018123881A1/ja active Application Filing
- 2017-12-22 DE DE112017006543.7T patent/DE112017006543T5/de active Pending
- 2017-12-22 US US16/471,061 patent/US20200020777A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101061262A (zh) * | 2004-10-04 | 2007-10-24 | 格里公司 | 低1c螺旋位错3英寸碳化硅晶片 |
JP2008290885A (ja) * | 2007-05-22 | 2008-12-04 | Denso Corp | 炭化珪素単結晶の製造装置および製造方法 |
JP2014169944A (ja) * | 2013-03-04 | 2014-09-18 | Central Research Institute Of Electric Power Industry | 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法 |
JP2015059072A (ja) * | 2013-09-20 | 2015-03-30 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ、及び炭化珪素単結晶インゴットの製造方法 |
CN105658846A (zh) * | 2014-09-30 | 2016-06-08 | 新日铁住金高新材料株式会社 | 碳化硅单晶晶片、和碳化硅单晶锭的制造方法 |
CN107208311A (zh) * | 2015-02-18 | 2017-09-26 | 新日铁住金株式会社 | 碳化硅单晶块的制造方法和碳化硅单晶块 |
CN108138359A (zh) * | 2015-10-02 | 2018-06-08 | 昭和电工株式会社 | SiC单晶锭 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017006543T5 (de) | 2016-12-26 | 2019-09-26 | Denso Corporation | SiC-Wafer und Verfahren zur Herstellung des SiC-Wafers |
CN113981537A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶种及其制造方法、碳化硅晶体的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018123881A1 (ja) | 2018-07-05 |
DE112017006543T5 (de) | 2019-09-26 |
US20200020777A1 (en) | 2020-01-16 |
JP6768491B2 (ja) | 2020-10-14 |
JP2018104220A (ja) | 2018-07-05 |
CN110268106B (zh) | 2021-05-11 |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Lishennoco Co.,Ltd. Patentee after: DENSO Corp. Address before: Tokyo, Japan Patentee before: Showa electrical materials Co.,Ltd. Patentee before: DENSO Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230412 Address after: Tokyo, Japan Patentee after: Showa electrical materials Co.,Ltd. Patentee after: DENSO Corp. Address before: Tokyo, Japan Patentee before: SHOWA DENKO Kabushiki Kaisha Patentee before: DENSO Corp. |