CN101061262B - 低1c螺旋位错3英寸碳化硅晶片 - Google Patents

低1c螺旋位错3英寸碳化硅晶片 Download PDF

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Publication number
CN101061262B
CN101061262B CN200580033838XA CN200580033838A CN101061262B CN 101061262 B CN101061262 B CN 101061262B CN 200580033838X A CN200580033838X A CN 200580033838XA CN 200580033838 A CN200580033838 A CN 200580033838A CN 101061262 B CN101061262 B CN 101061262B
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wafer
silicon carbide
sic
seed
crystal
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CN101061262A (zh
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阿德里安·波维尔
马克·布莱德
斯蒂芬·G·米勒
瓦莱里·F·茨韦特科夫
罗伯特·泰勒·莱昂纳德
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN200580033838XA 2004-10-04 2005-09-27 低1c螺旋位错3英寸碳化硅晶片 Expired - Lifetime CN101061262B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/957,806 US7314520B2 (en) 2004-10-04 2004-10-04 Low 1c screw dislocation 3 inch silicon carbide wafer
US10/957,806 2004-10-04
PCT/US2005/034351 WO2006041659A2 (en) 2004-10-04 2005-09-27 Low 1c screw dislocation density 3 inch silicon carbide wafer

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CN101061262A CN101061262A (zh) 2007-10-24
CN101061262B true CN101061262B (zh) 2013-06-12

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US (3) US7314520B2 (enExample)
EP (2) EP1797225B2 (enExample)
JP (3) JP2008515748A (enExample)
KR (1) KR20070054719A (enExample)
CN (1) CN101061262B (enExample)
TW (1) TWI313892B (enExample)
WO (1) WO2006041659A2 (enExample)

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US8785946B2 (en) 2014-07-22
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US8384090B2 (en) 2013-02-26
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US20060073707A1 (en) 2006-04-06
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