JP5653598B2 - 低底面転位バルク成長SiCウェハ - Google Patents
低底面転位バルク成長SiCウェハ Download PDFInfo
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- JP5653598B2 JP5653598B2 JP2009154425A JP2009154425A JP5653598B2 JP 5653598 B2 JP5653598 B2 JP 5653598B2 JP 2009154425 A JP2009154425 A JP 2009154425A JP 2009154425 A JP2009154425 A JP 2009154425A JP 5653598 B2 JP5653598 B2 JP 5653598B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 74
- 239000013078 crystal Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000005130 seeded sublimation method Methods 0.000 claims description 22
- 239000002243 precursor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 125000004429 atom Chemical group 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 49
- 230000007547 defect Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
本発明は、低欠陥シリコンカーバイドウェハおよび半導体用途のための前駆体としてのその使用と、大型高品質シリコンカーバイド単結晶のシード昇華成長とに関する。
一つの局面において、本発明は、SiCの高品質単結晶ウェハであり、該高品質単結晶ウェハは、少なくとも約3インチ(75mm)の直径と、約200cm−2未満の底面転位密度を有する少なくとも1平方インチ(6.25cm2)の連続した表面領域とを有する。
本発明は、高品質シリコンカーバイドウェハに関する。特に、本発明は、シード昇華を用いるこのようなウェハの成長を改善するための幾つかの技術を組み込んでいる。
Claims (13)
- 3C、4H、6H、2H、および15Rのポリタイプからなる群から選択されたポリタイプと、少なくとも75mmの直径と、X線トポグラフを使用して観察された275cm/cm3未満の全ライン長さに相当する44cm−2未満の底面転位密度を有する少なくとも0.25cm2の連続した表面領域とを有するSiCの高品質単結晶のウェハであって、
少なくとも75mmの直径の3C、4H、6H、2H、および15Rのポリタイプからなる群から選択される、単結晶のシリコンカーバイト・シード結晶を、
4度のカットオフ角度となるように、シードホルダーに取り付けられて、サセプタに取り付けられるステップと、
2000℃から2500℃の間の温度でシード昇華成長を実施するステップと、
少なくとも75mmの直径を有するSiCブールを形成するステップと、
前記温度を1900℃未満にまで低下させて、圧力を400Torrより高く上昇させることによって、前記シード昇華成長を終了するステップと、
0001平面に対して該SiCブールをスライスして、研磨して、ウェハにするステップとを包含するSiCの高品質単結晶のウェハを形成する方法によって
製造されたことを特徴とするSiCの高品質単結晶のウェハ。 - 請求項1に記載のSiCの高品質単結晶のウェハと、当該SiCの高品質単結晶のウェハの表面上にIII族窒化物エピタキシャル層とを備える、半導体デバイス前駆体ウェハ。
- 前記III族窒化物層は、GaN、AlGaN、AlN、AlInGaN、InN、AlInN、およびこれらの混合物からなる群から選択されている、請求項2に記載の半導体デバイス前駆体ウェハ。
- 前記ウェハの前記表面上に配置された複数の接合電界効果トランジスタをさらに備える、請求項3に記載の半導体デバイス前駆体ウェハ。
- 前記ウェハの前記表面上に配置された複数のヘテロ電界効果トランジスタをさらに備える、請求項3に記載の半導体デバイス前駆体ウェハ。
- 前記ウェハの前記表面上に配置された複数のダイオードをさらに備える、請求項3に記載の半導体デバイス前駆体ウェハ。
- 請求項2に記載の半導体デバイス前駆体ウェハと、
該ウェハのいくつかの部分上に配置された複数のIII族窒化物エピタキシャル層と
を備える、複数の半導体デバイス前駆体。 - 前記ウェハは、互いに反対側に位置する第一および第二の表面を有し、
前記複数のデバイス前駆体のそれぞれは、
基板上に配置されたエピタキシャル層であって、該エピタキシャル層を第一の導電型にするある濃度の適切なドーパント原子と、個々のソース部分、チャネル部分、およびドレイン部分とを有する、前記エピタキシャル層と、
該チャネル部分上の金属酸化物層と、
該金属酸化物層上の金属ゲートコンタクトであって、バイアスが該金属ゲートコンタクトに印加されたとき、活性チャネルを形成する前記金属ゲートコンタクトと
を備える、請求項7に記載の複数の半導体デバイス前駆体。 - 前記ウェハは、互いに反対側に位置するそれぞれの第一および第二の表面を有し、
前記複数の半導体デバイス前駆体のそれぞれは、
前記基板上の導電性チャネルと、
該導電性チャネル上のソースおよびドレインと、
該導電性チャネル上の該ソースと該ドレインとの間の金属ゲートコンタクトであって、
バイアスが該金属ゲートコンタクトに印加されたとき、活性チャネルを形成する金属ゲートコンタクトと
を備える、請求項7に記載の複数の半導体デバイス前駆体。 - SiCの高品質単結晶のウェハを形成する方法であって、
少なくとも75mmの直径の単結晶のシリコンカーバイト・シード結晶をシードホルダーに取り付けられて、サセプタに取り付けられるステップと、
2000℃から2500℃の間の温度でシード昇華成長を実施するステップと、
少なくとも75mmの直径を有するSiCブールを形成するステップと、
前記温度を1900℃未満にまで低下させて、圧力を400Torrより高く上昇させることによって、前記シード昇華成長を終了するステップと、
0001平面に対して該SiCブールをスライスして、ウェハにするステップであって、該ウェハは、該ウェハ上に、X線トポグラフを使用して観察された275cm/cm3未満の全ライン長さに相当する44cm−2未満の底面転位密度を有する少なくとも0.25cm2の連続した表面領域を有する、前記ウェハにするステップと
を包含する、方法。 - 前記ウェハでは、前記少なくとも0.25cm2の連続した表面領域が、44cm−2未満の底面転位密度を有し、前記ウェハが4度のカットオフ角度で製造される請求項10に記載の方法。
- 前記ウェハを研磨するステップをさらに包含する、請求項10に記載の方法。
- 前記シード結晶と前記ウェハのポリタイプは、3C、4H、6H、2H、および15Rのポリタイプからなる群から選択される、請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/147,645 US7294324B2 (en) | 2004-09-21 | 2005-06-08 | Low basal plane dislocation bulk grown SiC wafers |
US11/147,645 | 2005-06-08 |
Related Parent Applications (1)
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JP2008514631A Division JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
Publications (2)
Publication Number | Publication Date |
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JP2010006699A JP2010006699A (ja) | 2010-01-14 |
JP5653598B2 true JP5653598B2 (ja) | 2015-01-14 |
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JP2008514631A Pending JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
JP2008184963A Pending JP2008290938A (ja) | 2005-06-08 | 2008-07-16 | 低底面転位バルク成長SiCウェハ |
JP2009154425A Active JP5653598B2 (ja) | 2005-06-08 | 2009-06-29 | 低底面転位バルク成長SiCウェハ |
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JP2008514631A Pending JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
JP2008184963A Pending JP2008290938A (ja) | 2005-06-08 | 2008-07-16 | 低底面転位バルク成長SiCウェハ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7294324B2 (ja) |
EP (1) | EP1888821B1 (ja) |
JP (3) | JP2008542181A (ja) |
CN (1) | CN101194052B (ja) |
TW (1) | TWI343423B (ja) |
WO (1) | WO2006135476A1 (ja) |
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JP2010006699A (ja) | 2010-01-14 |
US7294324B2 (en) | 2007-11-13 |
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TWI343423B (en) | 2011-06-11 |
WO2006135476A1 (en) | 2006-12-21 |
EP1888821A1 (en) | 2008-02-20 |
JP2008290938A (ja) | 2008-12-04 |
CN101194052B (zh) | 2012-05-30 |
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