JP5680269B2 - 低マイクロパイプの100mm炭化ケイ素ウェハ - Google Patents
低マイクロパイプの100mm炭化ケイ素ウェハ Download PDFInfo
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- JP5680269B2 JP5680269B2 JP2008244459A JP2008244459A JP5680269B2 JP 5680269 B2 JP5680269 B2 JP 5680269B2 JP 2008244459 A JP2008244459 A JP 2008244459A JP 2008244459 A JP2008244459 A JP 2008244459A JP 5680269 B2 JP5680269 B2 JP 5680269B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 100
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 87
- 239000013078 crystal Substances 0.000 claims description 131
- 230000007547 defect Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000859 sublimation Methods 0.000 claims description 22
- 230000008022 sublimation Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000005130 seeded sublimation method Methods 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 235000015067 sauces Nutrition 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 41
- 238000000034 method Methods 0.000 description 16
- 239000000843 powder Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005092 sublimation method Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Description
Claims (16)
- 少なくとも100mmの直径と、25cm−2未満のマイクロパイプ密度とを有し、窒素、リン、砒素、アンチモン、ビスマス、ホウ素、アルミニウム、ガリウム、インジウムおよびタリウムからなる群から選択される少なくとも1つのドーパントを含む、
少なくとも100mmの直径と、25cm −2 未満のマイクロパイプ密度とを有する、4Hポリタイプの単結晶SiC種結晶上の成長の結果得られる、
4Hポリタイプを有する高品質のSiC単結晶ウェハであって、
サセプタの軸方向および半径方向に沿って所望の熱勾配を与えて種結晶添加昇華成長を行う昇華システムを用い、
炭化ケイ素のパウターソースを前記サセプタに収容し、
種結晶を取り付ける前に、種結晶ホルダを、少なくとも30分間、2500℃の温度でアニールし、
反りや撓みをねじり力が生じさせないように、種結晶に最小のねじり力をかけながら、前記種結晶をるつぼに配置し、
前記昇華システムにドーパントガスを導入し、
所望の結晶サイズに達した後は、前記昇華システムの温度を1900℃より低くした後、圧力を400torrより高い圧力まで上昇させて成長を終了させて、少なくとも100mmの直径と、25cm −2 未満のマイクロパイプ密度とを有するSiCブールを得て、
30分よりも長い期間、成長温度以上の温度で、結晶をアニールし、
前記SiCブールを機械的にスライシングしてウェハとし、
前記ウェハを研磨して製造される
SiC単結晶ウェハ。 - 前記マイクロパイプ密度が20cm−2未満である請求項1に記載のSiC結晶ウェハ。
- 前記マイクロパイプ密度が7cm−2未満である請求項1に記載のSiC結晶ウェハ。
- 7〜22cm −2 の表面上のマイクロパイプ密度を有する請求項1に記載のSiC結晶ウェハ。
- その表面上に545〜1730個のマイクロパイプを有する請求項1に記載のSiC結晶ウェハ。
- 前記表面マイクロパイプ密度が、前記表面上にある全マイクロパイプの総数を、前記ウェハの表面積で割ったものを表す請求項1ないし5のいずれか一項に記載のSiC結晶ウェハ。
- 前記表面マイクロパイプ密度が、マイクロパイプ欠陥を優先的に強調するエッチングの後の前記表面上の全マイクロパイプの総数を表す請求項6に記載のSiC結晶ウェハ。
- 前記表面マイクロパイプ密度が、溶融水酸化カリウムで表面のエッチングの後の前記表面の全マイクロパイプの総数を表す請求項7に記載のSiC結晶ウェハ。
- 25cm −2 未満の表面上のマイクロパイプ密度と、前記炭化ケイ素ウェハの前記表面上のIII族窒化物層とを有する請求項1に記載のSiC結晶ウェハ。
- 前記III群窒化物層が、GaN、AlGaN、AlN、AlInGaN、InN、AlInNおよびそれらの混合物からなる群から選択される請求項9に記載のSiC結晶ウェハ。
- 請求項1に記載の炭化ケイ素ウェハと、前記ウェハのいくつかの部分上にある複数のそれぞれのIII族窒化物エピタキシャル層とを備える複数の半導体デバイス前駆体。
- 第1の表面と第2の表面が互いに対向したバルク単結晶炭化ケイ素基板と、
前記炭化ケイ素基板上の複数のデバイスと
を備えた請求項1に記載のSiC結晶ウェハであって、
前記デバイスの各々が、
前記基板上に位置したエピタキシャル層であって、このエピタキシャル層を第1の導電型のソース部分、チャネル部分、およびドレイン部分にするための適切なドーパント原子の濃度を有するエピタキシャル層と、
前記チャネル部分上の金属酸化物層と、
前記金属酸化物層上の金属ゲートコンタクトであって、この金属ゲートコンタクトにバイアスがかけられたときにアクティブチャネルを形成する金属ゲートコンタクトと
を備えた請求項1に記載のSiC結晶ウェハ。 - 第1の表面と第2の表面が互いに対向したバルク単結晶炭化ケイ素基板と、
前記炭化ケイ素基板上の複数のデバイスと
を備えた請求項1に記載のSiC結晶ウェハであって、
前記デバイスの各々が、
前記基板上の導電チャネルと、
前記導電チャネル上のソースおよびドレインと、
前記ソースと前記ドレインの間の前記導電チャネル上の金属ゲートコンタクトであって、この金属ゲートコンタクトにバイアスがかけられたときにアクティブチャネルを形成する金属ゲートコンタクトと
を備えた請求項1に記載のSiC結晶ウェハ。 - 第1の表面と第2の表面が互いに対向したバルク単結晶炭化ケイ素基板と、
前記単結晶炭化ケイ素基板上に位置する複数の接合電界効果トランジスタと
を備えた請求項1に記載のSiC結晶ウェハ。 - 第1の表面と第2の表面が互いに対向したバルク単結晶炭化ケイ素基板と、
前記単結晶炭化ケイ素基板上に位置する複数のヘテロ電界効果トランジスタと
を備えた請求項1に記載のSiC結晶ウェハ。 - 第1の表面と第2の表面が互いに対向したバルク単結晶炭化ケイ素基板と、
前記単結晶炭化ケイ素基板上に位置する複数のダイオードと
を備えた請求項1に記載のSiC結晶ウェハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/957,807 | 2004-10-04 | ||
US10/957,807 US7314521B2 (en) | 2004-10-04 | 2004-10-04 | Low micropipe 100 mm silicon carbide wafer |
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JP2007534682A Division JP2008515749A (ja) | 2004-10-04 | 2005-09-27 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
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JP2012193298A Division JP6141609B2 (ja) | 2004-10-04 | 2012-09-03 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
Publications (2)
Publication Number | Publication Date |
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JP2009078966A JP2009078966A (ja) | 2009-04-16 |
JP5680269B2 true JP5680269B2 (ja) | 2015-03-04 |
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JP2007534682A Pending JP2008515749A (ja) | 2004-10-04 | 2005-09-27 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
JP2008244459A Active JP5680269B2 (ja) | 2004-10-04 | 2008-09-24 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
JP2012193298A Active JP6141609B2 (ja) | 2004-10-04 | 2012-09-03 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
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JP2007534682A Pending JP2008515749A (ja) | 2004-10-04 | 2005-09-27 | 低マイクロパイプの100mm炭化ケイ素ウェハ |
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Country Status (8)
Country | Link |
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US (3) | US7314521B2 (ja) |
EP (2) | EP2487280A1 (ja) |
JP (3) | JP2008515749A (ja) |
KR (1) | KR100854004B1 (ja) |
CN (2) | CN101084330A (ja) |
CA (1) | CA2581856C (ja) |
TW (1) | TWI294925B (ja) |
WO (1) | WO2006041660A2 (ja) |
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WO2006041660A2 (en) | 2006-04-20 |
KR20070088561A (ko) | 2007-08-29 |
CN103422174A (zh) | 2013-12-04 |
CA2581856A1 (en) | 2006-04-20 |
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CN101084330A (zh) | 2007-12-05 |
US20080237609A1 (en) | 2008-10-02 |
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US8866159B1 (en) | 2014-10-21 |
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