JP2010006699A - 低底面転位バルク成長SiCウェハ - Google Patents
低底面転位バルク成長SiCウェハ Download PDFInfo
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- JP2010006699A JP2010006699A JP2009154425A JP2009154425A JP2010006699A JP 2010006699 A JP2010006699 A JP 2010006699A JP 2009154425 A JP2009154425 A JP 2009154425A JP 2009154425 A JP2009154425 A JP 2009154425A JP 2010006699 A JP2010006699 A JP 2010006699A
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- wafer
- sic
- seed
- silicon carbide
- basal plane
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- 239000013078 crystal Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 239000002243 precursor Substances 0.000 abstract description 11
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 66
- 229910010271 silicon carbide Inorganic materials 0.000 description 64
- 235000012431 wafers Nutrition 0.000 description 49
- 230000007547 defect Effects 0.000 description 25
- 238000005130 seeded sublimation method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】少なくとも直径約3インチ(75mm)と、4°オフ軸のウェハに対して、約500cm−2未満の底面転位密度を有する少なくとも1平方インチ(6.25cm2)の連続した表面領域とを有するSiCウェハであって、その製造方法は、3インチよりわずかに大きい直径を有するSiCブールを形成するステップと、0001平面に対して約2°と12°の間の角度で、該ブールをスライスして、ウェハにするステップであって、該ウェハは、各ウェハ上に、500cm−2未満の底面転位密度を有する少なくとも1平方インチの連続した表面領域を有する、ステップとを包含する。前記方法で背蔵した高品質シリコンカーバイド半導体前駆体ウェハ4は、追加的に、1つ以上の少なくとも一つのIII族窒化物層6を有する。
【選択図】図2
Description
本発明は、低欠陥シリコンカーバイドウェハおよび半導体用途のための前駆体としてのその使用と、大型高品質シリコンカーバイド単結晶のシード昇華成長とに関する。
一つの局面において、本発明は、SiCの高品質単結晶ウェハであり、該高品質単結晶ウェハは、少なくとも約3インチ(75mm)の直径と、約200cm−2未満の底面転位密度を有する少なくとも1平方インチ(6.25cm2)の連続した表面領域とを有する。
本発明は、高品質シリコンカーバイドウェハに関する。特に、本発明は、シード昇華を用いるこのようなウェハの成長を改善するための幾つかの技術を組み込んでいる。
Claims (1)
- 本願明細書に記載のSiCの高品質単結晶ウェハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/147,645 US7294324B2 (en) | 2004-09-21 | 2005-06-08 | Low basal plane dislocation bulk grown SiC wafers |
US11/147,645 | 2005-06-08 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514631A Division JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010006699A true JP2010006699A (ja) | 2010-01-14 |
JP5653598B2 JP5653598B2 (ja) | 2015-01-14 |
Family
ID=36659751
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514631A Pending JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
JP2008184963A Pending JP2008290938A (ja) | 2005-06-08 | 2008-07-16 | 低底面転位バルク成長SiCウェハ |
JP2009154425A Active JP5653598B2 (ja) | 2005-06-08 | 2009-06-29 | 低底面転位バルク成長SiCウェハ |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514631A Pending JP2008542181A (ja) | 2005-06-08 | 2006-04-05 | 低底面転位バルク成長SiCウェハ |
JP2008184963A Pending JP2008290938A (ja) | 2005-06-08 | 2008-07-16 | 低底面転位バルク成長SiCウェハ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7294324B2 (ja) |
EP (1) | EP1888821B1 (ja) |
JP (3) | JP2008542181A (ja) |
CN (1) | CN101194052B (ja) |
TW (1) | TWI343423B (ja) |
WO (1) | WO2006135476A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016149497A (ja) * | 2015-02-13 | 2016-08-18 | 住友電気工業株式会社 | 半導体装置 |
Families Citing this family (38)
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JP4926556B2 (ja) * | 2006-06-20 | 2012-05-09 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板 |
US8410488B2 (en) * | 2006-09-14 | 2013-04-02 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
JP2010087397A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
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JP5696630B2 (ja) | 2011-09-21 | 2015-04-08 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
JP5750363B2 (ja) * | 2011-12-02 | 2015-07-22 | 株式会社豊田中央研究所 | SiC単結晶、SiCウェハ及び半導体デバイス |
JP6226959B2 (ja) | 2012-04-20 | 2017-11-08 | トゥー‐シックス・インコーポレイテッド | 大口径高品質SiC単結晶、方法、及び装置 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
JP5857986B2 (ja) | 2013-02-20 | 2016-02-10 | 株式会社デンソー | 炭化珪素単結晶および炭化珪素単結晶の製造方法 |
JP6192948B2 (ja) * | 2013-02-20 | 2017-09-06 | 株式会社豊田中央研究所 | SiC単結晶、SiCウェハ、SiC基板、及び、SiCデバイス |
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US10202706B2 (en) * | 2014-09-30 | 2019-02-12 | Showa Denko K.K. | Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot |
JP6592961B2 (ja) * | 2015-05-19 | 2019-10-23 | セイコーエプソン株式会社 | 炭化ケイ素基板および炭化ケイ素基板の製造方法 |
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JP6299827B2 (ja) * | 2016-09-07 | 2018-03-28 | 住友電気工業株式会社 | 半導体基板 |
JP6832240B2 (ja) * | 2017-05-26 | 2021-02-24 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
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US20060075958A1 (en) | 2006-04-13 |
EP1888821B1 (en) | 2014-11-19 |
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JP2008290938A (ja) | 2008-12-04 |
TWI343423B (en) | 2011-06-11 |
WO2006135476A1 (en) | 2006-12-21 |
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